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J. E. Oh
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Journal Articles

Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study

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Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, J. E. Oh
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 063501 (2010)
https://doi.org/10.1063/1.3327004
Published: March 2010
View articletitled, Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study
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Journal Articles

Strong photoluminescence at 1.53   μ m from GaSb/AlGaSb multiple quantum wells grown on Si substrate

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D. H. Nguyen, J. Park, Y. K. Noh, M. D. Kim, D. Lee, J. E. Oh
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 061910 (2009)
https://doi.org/10.1063/1.3205473
Published: August 2009
View articletitled, Strong photoluminescence at 1.53   μ m from GaSb/AlGaSb multiple quantum wells grown on Si substrate
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Journal Articles

High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate

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Y. H. Kim, J. Y. Lee, Y. G. Noh, M. D. Kim, J. E. Oh
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 241915 (2007)
https://doi.org/10.1063/1.2747674
Published: June 2007
View articletitled, High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate
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Journal Articles

Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study

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Y. H. Kim, J. Y. Lee, Y. G. Noh, M. D. Kim, Y. J. Kwon, J. E. Oh, R. Gronsky
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 031919 (2006)
https://doi.org/10.1063/1.2228028
Published: July 2006
View articletitled, Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study
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Journal Articles

Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study

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Y. H. Kim, J. Y. Lee, Y. G. Noh, M. D. Kim, S. M. Cho, Y. J. Kwon, J. E. Oh
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 241907 (2006)
https://doi.org/10.1063/1.2209714
Published: June 2006
View articletitled, Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study
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Journal Articles

Blue‐light Emission from GaN/AlGaN Multiple Quantum Wells with an Al0.5Ga0.5N Perturbation Monolayers Grown by Molecular Beam Epitaxy

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Y. S. Park, S. H. Lee, J. E. Oh, C. M. Park, T. W. Kang
Journal: AIP Conference Proceedings
AIP Conf. Proc. 772, 943–944 (2005)
https://doi.org/10.1063/1.1994419
Published: June 2005
View articletitled, Blue‐light Emission from GaN/AlGaN Multiple Quantum Wells with an Al0.5Ga0.5N Perturbation Monolayers Grown by Molecular Beam Epitaxy
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Journal Articles

Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy

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Y. S. Park, C. M. Park, D. J. Fu, T. W. Kang, J. E. Oh
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 5718–5720 (2004)
https://doi.org/10.1063/1.1832739
Published: December 2004
View articletitled, Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy
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Journal Articles

Magnetotransport measurements through stacked InAs self-assembled quantum dots

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M. H. Son, J. H. Oh, D. Y. Jeong, D. Ahn, M. S. Jun, S. W. Hwang, J. E. Oh, L. W. Engel
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 1230–1232 (2003)
https://doi.org/10.1063/1.1557774
Published: February 2003
View articletitled, Magnetotransport measurements through stacked InAs self-assembled quantum dots
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Journal Articles

Enhancement of titanium nitride barrier metal properties by nitrogen radical assisted metalorganic chemical vapor deposition

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Y. H. Chang, J. S. Chun, J. E. Oh, S. J. Won, S. H. Paek, H. D. Lee, S. I. Lee, J. S. Choi, J. G. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 68, 2580–2582 (1996)
https://doi.org/10.1063/1.116190
Published: April 1996
View articletitled, Enhancement of titanium nitride barrier metal properties by nitrogen radical assisted metalorganic chemical vapor deposition
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Journal Articles

Thermally stable ternary titanium‐tantalum silicide formation on polycrystalline silicon

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J. S. Choi, S. H. Paek, Y. S. Hwang, S. G. Kang, H. C. Cho, J. E. Oh, T. E. Shim, S. I. Lee, J. K. Lee, J. G. Lee
Journal: Journal of Applied Physics
J. Appl. Phys. 74, 1456–1458 (1993)
https://doi.org/10.1063/1.354861
Published: July 1993
View articletitled, Thermally stable ternary titanium‐tantalum silicide formation on polycrystalline silicon
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Journal Articles

X‐ray photoelectron spectroscopy and cross‐sectional transmission electron microscopy studies of titanium nitride/titanium/silicon structures after thermal annealing

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S. R. Ryu, D. S. Shin, J. E. Oh, J. S. Choi, S. H. Paek, S. I. Lee, J. K. Lee, T. U. Sim, J. G. Lee, G. T. Sheng
Journal: Applied Physics Letters
Appl. Phys. Lett. 62, 579–581 (1993)
https://doi.org/10.1063/1.108861
Published: February 1993
View articletitled, X‐ray photoelectron spectroscopy and cross‐sectional transmission electron microscopy studies of titanium nitride/titanium/silicon structures after thermal annealing
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Journal Articles

Effects of BF2+ implants on titanium silicide formation by rapid thermal annealing

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J. S. Choi, Y. S. Hwang, S. H. Paek, J. E. Oh, T. U. Sim, J. G. Lee
Journal: Journal of Applied Physics
J. Appl. Phys. 72, 297–299 (1992)
https://doi.org/10.1063/1.352136
Published: July 1992
View articletitled, Effects of BF2+ implants on titanium silicide formation by rapid thermal annealing
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Journal Articles

Growth and characterization of GaAs/Al/GaAs heterostructures

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P. Bhattacharya, J. E. Oh, J. Singh, D. Biswas, R. Clarke, W. Dos Passos, R. Merlin, N. Mestres, K. H. Chang, R. Gibala
Journal: Journal of Applied Physics
J. Appl. Phys. 67, 3700–3705 (1990)
https://doi.org/10.1063/1.345035
Published: April 1990
View articletitled, Growth and characterization of GaAs/Al/GaAs heterostructures
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Journal Articles

Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates

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J. E. Oh, P. K. Bhattacharya, Y. C. Chen, S. Tsukamoto
Journal: Journal of Applied Physics
J. Appl. Phys. 66, 3618–3621 (1989)
https://doi.org/10.1063/1.344069
Published: October 1989
View articletitled, Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates
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Journal Articles

Calculations of the electric field dependent far‐infrared absorption spectra in InAs/AlGaSb quantum wells

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S. Hong, J. P. Loehr, J. E. Oh, P. K. Bhattacharya, J. Singh
Journal: Applied Physics Letters
Appl. Phys. Lett. 55, 888–890 (1989)
https://doi.org/10.1063/1.101616
Published: August 1989
View articletitled, Calculations of the electric field dependent far‐infrared absorption spectra in InAs/AlGaSb quantum wells
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Journal Articles

In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures

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M. Jaffe, J. E. Oh, J. Pamulapati, J. Singh, P. Bhattacharya
Journal: Applied Physics Letters
Appl. Phys. Lett. 54, 2345–2346 (1989)
https://doi.org/10.1063/1.101121
Published: June 1989
View articletitled, In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures
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Journal Articles

A critical examination of the molecular‐beam‐epitaxial growth of InxGa1−xAs/GaAs strained quantum well structures

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J. Pamulapati, J. E. Oh, N. Debbar, P. Bhattacharya
Journal: Journal of Applied Physics
J. Appl. Phys. 65, 1361–1363 (1989)
https://doi.org/10.1063/1.343006
Published: February 1989
View articletitled, A critical examination of the molecular‐beam‐epitaxial growth of InxGa1−xAs/GaAs strained quantum well structures
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Journal Articles

The effect of molecular‐beam‐epitaxial growth conditions on the electrical characteristics of In0.52Al0.48As/In0.53Ga0.47As resonant tunneling diodes

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J. E. Oh, I. Mehdi, J. Pamulapati, P. K. Bhattacharya, G. I. Haddad
Journal: Journal of Applied Physics
J. Appl. Phys. 65, 842–845 (1989)
https://doi.org/10.1063/1.343075
Published: January 1989
View articletitled, The effect of molecular‐beam‐epitaxial growth conditions on the electrical characteristics of In0.52Al0.48As/In0.53Ga0.47As resonant tunneling diodes
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Journal Articles

Piezoreflectance characterization of double‐barrier resonant tunneling structures

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R. L. Tober, J. Pamulapati, J. E. Oh, P. K. Bhattacharya
Journal: Applied Physics Letters
Appl. Phys. Lett. 53, 883–885 (1988)
https://doi.org/10.1063/1.100103
Published: September 1988
View articletitled, Piezoreflectance characterization of double‐barrier resonant tunneling structures
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Journal Articles

Summary Abstract: Surface analysis of amorphous Ta–Cu thin films deposited on GaAs

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J. J. Pouch, S. A. Alterovitz, J. A. Woollam, J. E. Oh
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 6, 983–984 (1988)
https://doi.org/10.1116/1.575045
Published: May 1988
View articletitled, Summary Abstract: Surface analysis of amorphous Ta–Cu thin films deposited on GaAs
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