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Journal Articles

Ultra-low density and high performance InAs quantum dot single photon emitters

C. Shang, M. De Gregorio, Q. Buchinger, M. Meinecke, P. Gschwandtner, A. Pfenning, T. Huber-Loyola, S. Hoefling, J. E. Bowers

APL Quantum 1, 036115 (2024)

https://doi.org/10.1063/5.0209866

Published: August 2024

View article titled, Ultra-low density and high performance InAs quantum dot single photon emitters

Journal Articles

Expanding the quantum photonic toolbox in AlGaAsOI

J. E. Castro, T. J. Steiner, L. Thiel, A. Dinkelacker, C. McDonald, P. Pintus, L. Chang, J. E. Bowers, G. Moody

APL Photonics 7, 096103 (2022)

https://doi.org/10.1063/5.0098984

Published: September 2022

View article titled, Expanding the quantum photonic toolbox in AlGaAsOI

Journal Articles

Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback

H. Huang, J. Duan, B. Dong, J. Norman, D. Jung, J. E. Bowers, F. Grillot

APL Photonics 5, 016103 (2020)

https://doi.org/10.1063/1.5120029

Published: January 2020

View article titled, Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback

Journal Articles

Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers

B. Dong, J. Duan, C. Shang, H. Huang, A. B. Sawadogo, D. Jung, Y. Wan, J. E. Bowers, F. Grillot

Appl. Phys. Lett. 115, 091101 (2019)

https://doi.org/10.1063/1.5110768

Published: August 2019

View article titled, Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- <em>μ</em> m InP-based InAs quantum dash lasers

Journal Articles

Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

D. Inoue, Y. Wan, D. Jung, J. Norman, C. Shang, N. Nishiyama, S. Arai, A. C. Gossard, J. E. Bowers

Appl. Phys. Lett. 113, 093506 (2018)

https://doi.org/10.1063/1.5041908

Published: August 2018

View article titled, Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

Journal Articles

Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

J. Duan, H. Huang, D. Jung, Z. Zhang, J. Norman, J. E. Bowers, F. Grillot

Appl. Phys. Lett. 112, 251111 (2018)

https://doi.org/10.1063/1.5025879

Published: June 2018

View article titled, Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

Journal Articles

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

N. G. Young, E. E. Perl, R. M. Farrell, M. Iza, S. Keller, J. E. Bowers, S. Nakamura, S. P. DenBaars, J. S. Speck

Appl. Phys. Lett. 104, 163902 (2014)

https://doi.org/10.1063/1.4873117

Published: April 2014

View article titled, High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

Journal Articles

Erratum: “High efficiency semimetal/semiconductor nanocomposite thermoelectric materials” [J. Appl. Phys. 108, 123702 (2010)]

J. M. O. Zide, J.-H. Bahk, R. Singh, M. Zebarjadi, G. Zeng, H. Lu, J. P. Feser, D. Xu, S. L. Singer, Z. X. Bian, A. Majumdar, J. E. Bowers, A. Shakouri, A. C. Gossard

J. Appl. Phys. 110, 059902 (2011)

https://doi.org/10.1063/1.3630947

Published: September 2011

View article titled, Erratum: “High efficiency semimetal/semiconductor nanocomposite thermoelectric materials” [J. Appl. Phys. 108, 123702 (2010)]

Journal Articles

An apparatus for simultaneous measurement of electrical conductivity and thermopower of thin films in the temperature range of 300–750 K

J. Ravichandran, J. T. Kardel, M. L. Scullin, J.-H. Bahk, H. Heijmerikx, J. E. Bowers, A. Majumdar

Rev. Sci. Instrum. 82, 015108 (2011)

https://doi.org/10.1063/1.3529438

Published: January 2011

View article titled, An apparatus for simultaneous measurement of electrical conductivity and thermopower of thin films in the temperature range of 300–750 K

Journal Articles

High efficiency semimetal/semiconductor nanocomposite thermoelectric materials

J. M. O. Zide, J.-H. Bahk, R. Singh, M. Zebarjadi, G. Zeng, H. Lu, J. P. Feser, D. Xu, S. L. Singer, Z. X. Bian, A. Majumdar, J. E. Bowers, A. Shakouri, A. C. Gossard

J. Appl. Phys. 108, 123702 (2010)

https://doi.org/10.1063/1.3514145

Published: December 2010

View article titled, High efficiency semimetal/semiconductor nanocomposite thermoelectric materials

Journal Articles

Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate

D. Liang, J. E. Bowers

J. Vac. Sci. Technol. B 26, 1560–1568 (2008)

https://doi.org/10.1116/1.2943667

Published: August 2008

View article titled, Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate

Journal Articles

Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles

J. M. Zide, D. O. Klenov, S. Stemmer, A. C. Gossard, G. Zeng, J. E. Bowers, D. Vashaee, A. Shakouri

Appl. Phys. Lett. 87, 112102 (2005)

https://doi.org/10.1063/1.2043241

Published: September 2005

View article titled, Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles

Journal Articles

Interface of directly bonded InP wafers for vertical couplers

N. Y. Jin-Phillipp, B. Liu, J. E. Bowers, E. L. Hu, M. Kelsch, J. Thomas, M. Rühle

Appl. Phys. Lett. 80, 1346–1348 (2002)

https://doi.org/10.1063/1.1454216

Published: February 2002

View article titled, Interface of directly bonded InP wafers for vertical couplers

Journal Articles

Ultraviolet picosecond optical pulse generation from a mode-locked InGaN laser diode

S. Gee, J. E. Bowers

Appl. Phys. Lett. 79, 1951–1952 (2001)

https://doi.org/10.1063/1.1405432

Published: September 2001

View article titled, Ultraviolet picosecond optical pulse generation from a mode-locked InGaN laser diode

Journal Articles

Interface of directly bonded GaAs and InP

N. Y. Jin-Phillipp, W. Sigle, A. Black, D. Babic, J. E. Bowers, E. L. Hu, M. Rühle

J. Appl. Phys. 89, 1017–1024 (2001)

https://doi.org/10.1063/1.1331068

Published: January 2001

View article titled, Interface of directly bonded GaAs and InP

Journal Articles

Large interband second-order susceptibilities in In x Ga 1−x N/GaN quantum wells

H. Schmidt, A. C. Abare, J. E. Bowers, S. P. Denbaars, A. Imamoǧlu

Appl. Phys. Lett. 75, 3611–3613 (1999)

https://doi.org/10.1063/1.125404

Published: December 1999

View article titled, Large interband second-order susceptibilities in In x Ga 1−x N/GaN quantum wells

Journal Articles

Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics

C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, A. C. Gossard, J. W. Dong, C. J. Palmstrøm

Appl. Phys. Lett. 75, 3548–3550 (1999)

https://doi.org/10.1063/1.125384

Published: November 1999

View article titled, Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics

Journal Articles

Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates

C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, A. C. Gossard

Appl. Phys. Lett. 75, 2575–2577 (1999)

https://doi.org/10.1063/1.125082

Published: October 1999

View article titled, Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates

Journal Articles

Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

S. F. Chichibu, H. Marchand, M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, S. Nakamura

Appl. Phys. Lett. 74, 1460–1462 (1999)

https://doi.org/10.1063/1.123581

Published: March 1999

View article titled, Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

Journal Articles

Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, T. Sota

Appl. Phys. Lett. 73, 2006–2008 (1998)

https://doi.org/10.1063/1.122350

Published: October 1998

View article titled, Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

NARROW

Topics

Ultra-low density and high performance InAs quantum dot single photon emitters

Expanding the quantum photonic toolbox in AlGaAsOI

Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback

Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers

Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

Erratum: “High efficiency semimetal/semiconductor nanocomposite thermoelectric materials” [J. Appl. Phys. 108, 123702 (2010)]

An apparatus for simultaneous measurement of electrical conductivity and thermopower of thin films in the temperature range of 300–750 K

High efficiency semimetal/semiconductor nanocomposite thermoelectric materials

Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate

Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles

Interface of directly bonded InP wafers for vertical couplers

Ultraviolet picosecond optical pulse generation from a mode-locked InGaN laser diode

Interface of directly bonded GaAs and InP

Large interband second-order susceptibilities in In x Ga 1−x N/GaN quantum wells

Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics

Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates

Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

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