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J. C. Sturm
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Journal Articles

Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

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C. Payette, K. Wang, P. J. Koppinen, Y. Dovzhenko, J. C. Sturm, J. R. Petta
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 043508 (2012)
https://doi.org/10.1063/1.3678043
Published: January 2012
View article titled, Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures
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Journal Articles

Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

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E. Lausecker, Y. Huang, T. Fromherz, J. C. Sturm, S. Wagner
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 263501 (2010)
https://doi.org/10.1063/1.3457446
Published: June 2010
View article titled, Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication
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Journal Articles

Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane

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K. H. Chung, N. Yao, J. Benziger, J. C. Sturm, K. K. Singh, D. Carlson, S. Kuppurao
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 113506 (2008)
https://doi.org/10.1063/1.2897325
Published: March 2008
View article titled, Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane
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Journal Articles

Publisher's Note: “Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates” [J. Appl. Phys. 100, 023537 (2006)]

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R. L. Peterson, K. D. Hobart, H. Yin, F. J. Kub, J. C. Sturm
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 129901 (2006)
https://doi.org/10.1063/1.2403772
Published: December 2006
View article titled, Publisher's Note: “Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates” [J. Appl. Phys. 100, 023537 (2006)]
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Journal Articles

SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth

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Xiang-Zheng Bo, L. P. Rokhinson, N. Yao, D. C. Tsui, J. C. Sturm
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 094317 (2006)
https://doi.org/10.1063/1.2358398
Published: November 2006
View article titled, SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth
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Journal Articles

Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates

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R. L. Peterson, K. D. Hobart, H. Yin, F. J. Kub, J. C. Sturm
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 023537 (2006)
https://doi.org/10.1063/1.2210810
Published: July 2006
View article titled, Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates
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Includes: Supplementary data
Journal Articles

Reduced buckling in one dimension versus two dimensions of a compressively strained film on a compliant substrate

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R. L. Peterson, K. D. Hobart, F. J. Kub, H. Yin, J. C. Sturm
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 201913 (2006)
https://doi.org/10.1063/1.2204456
Published: May 2006
View article titled, Reduced buckling in one dimension versus two dimensions of a compressively strained film on a compliant substrate
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Journal Articles

Comment on “Fabrication of strained silicon on insulator by strain transfer process” [Appl. Phys. Lett. 87, 051921 (2005)]

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R. L. Peterson, K. D. Hobart, F. J. Kub, J. C. Sturm
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 146101 (2006)
https://doi.org/10.1063/1.2192641
Published: April 2006
View article titled, Comment on “Fabrication of strained silicon on insulator by strain transfer process” [Appl. Phys. Lett. 87, 051921 (2005)]
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Journal Articles

Programmable organic thin-film devices with extremely high current densities

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Troy Graves-Abe, J. C. Sturm
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 133502 (2005)
https://doi.org/10.1063/1.2058219
Published: September 2005
View article titled, Programmable organic thin-film devices with extremely high current densities
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Journal Articles

Tunable uniaxial vs biaxial in-plane strain using compliant substrates

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Haizhou Yin, R. L. Peterson, K. D. Hobart, S. R. Shieh, T. S. Duffy, J. C. Sturm
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 061922 (2005)
https://doi.org/10.1063/1.2006215
Published: August 2005
View article titled, Tunable uniaxial vs biaxial in-plane strain using compliant substrates
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Journal Articles

Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application

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Troy Graves-Abe, Florian Pschenitzka, H. Z. Jin, Brent Bollman, J. C. Sturm, R. A. Register
Journal: Journal of Applied Physics
J. Appl. Phys. 96, 7154–7163 (2004)
https://doi.org/10.1063/1.1806548
Published: December 2004
View article titled, Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application
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Journal Articles

Continuous microfluidic immunomagnetic cell separation

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David W. Inglis, R. Riehn, R. H. Austin, J. C. Sturm
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 5093–5095 (2004)
https://doi.org/10.1063/1.1823015
Published: November 2004
View article titled, Continuous microfluidic immunomagnetic cell separation
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Journal Articles

High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation

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Haizhou Yin, K. D. Hobart, F. J. Kub, S. R. Shieh, T. S. Duffy, J. C. Sturm
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 3624–3626 (2004)
https://doi.org/10.1063/1.1738514
Published: May 2004
View article titled, High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation
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Journal Articles

Boron segregation and electrical properties in polycrystalline Si 1−x−y Ge x C y and Si 1−y C y alloys

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E. J. Stewart, M. S. Carroll, J. C. Sturm
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 4029–4035 (2004)
https://doi.org/10.1063/1.1649452
Published: April 2004
View article titled, Boron segregation and electrical properties in polycrystalline Si 1−x−y Ge x C y and Si 1−y C y alloys
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Journal Articles

Spherical deformation of compliant substrates with semiconductor device islands

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P. I. Hsu, M. Huang, Z. Xi, S. Wagner, Z. Suo, J. C. Sturm
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 705–712 (2004)
https://doi.org/10.1063/1.1634370
Published: January 2004
View article titled, Spherical deformation of compliant substrates with semiconductor device islands
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Journal Articles

Buckling suppression of SiGe islands on compliant substrates

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Haizhou Yin, R. Huang, K. D. Hobart, J. Liang, Z. Suo, S. R. Shieh, T. S. Duffy, F. J. Kub, J. C. Sturm
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 6875–6882 (2003)
https://doi.org/10.1063/1.1621069
Published: November 2003
View article titled, Buckling suppression of SiGe islands on compliant substrates
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Journal Articles

Strain partition of Si/SiGe and SiO 2 / SiGe on compliant substrates

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H. Yin, K. D. Hobart, F. J. Kub, S. R. Shieh, T. S. Duffy, J. C. Sturm
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 3853–3855 (2003)
https://doi.org/10.1063/1.1578168
Published: June 2003
View article titled, Strain partition of Si/SiGe and SiO 2 / SiGe on compliant substrates
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Journal Articles

Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation

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Xiang-Zheng Bo, Leonid P. Rokhinson, Haizhou Yin, D. C. Tsui, J. C. Sturm
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 3263–3265 (2002)
https://doi.org/10.1063/1.1515113
Published: October 2002
View article titled, Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation
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Journal Articles

Thin-film transistor circuits on large-area spherical surfaces

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P. I. Hsu, R. Bhattacharya, H. Gleskova, M. Huang, Z. Xi, Z. Suo, S. Wagner, J. C. Sturm
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 1723–1725 (2002)
https://doi.org/10.1063/1.1502199
Published: August 2002
View article titled, Thin-film transistor circuits on large-area spherical surfaces
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Journal Articles

Quantification of substitutional carbon loss from Si 0.998 C 0.002 due to silicon self-interstitial injection during oxidation

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M. S. Carroll, J. C. Sturm
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 1225–1227 (2002)
https://doi.org/10.1063/1.1500411
Published: August 2002
View article titled, Quantification of substitutional carbon loss from Si 0.998 C 0.002 due to silicon self-interstitial injection during oxidation
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