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Journal Articles

Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

C. T.-K. Lew, V. K. Sewani, T. Ohshima, J. C. McCallum, B. C. Johnson

J. Appl. Phys. 134, 055703 (2023)

https://doi.org/10.1063/5.0167650

Published: August 2023

View article titled, Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

Journal Articles

Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide

C. T.-K. Lew, V. K. Sewani, N. Iwamoto, T. Ohshima, J. C. McCallum, B. C. Johnson

Appl. Phys. Lett. 122, 234001 (2023)

https://doi.org/10.1063/5.0154382

Published: June 2023

View article titled, Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide

Includes: Supplementary data

Journal Articles

Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars

R. A. Parker, N. Dontschuk, S.-I. Sato, C. T.-K. Lew, P. Reineck, A. Nadarajah, T. Ohshima, B. C. Gibson, S. Castelletto, J. C. McCallum, B. C. Johnson

J. Appl. Phys. 130, 145101 (2021)

https://doi.org/10.1063/5.0055100

Published: October 2021

View article titled, Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars

Includes: Supplementary data

Journal Articles

Donor-based qubits for quantum computing in silicon

J. C. McCallum, B. C. Johnson, T. Botzem

Appl. Phys. Rev. 8, 031314 (2021)

https://doi.org/10.1063/5.0060957

Published: September 2021

View article titled, Donor-based qubits for quantum computing in silicon

Journal Articles

Investigation of charge carrier trapping in H-terminated diamond devices

C. T.-K. Lew, N. Dontschuk, D. A. Broadway, J.-P. Tetienne, J. C. McCallum, L. C. L. Hollenberg, B. C. Johnson

Appl. Phys. Lett. 117, 143507 (2020)

https://doi.org/10.1063/5.0026104

Published: October 2020

View article titled, Investigation of charge carrier trapping in H-terminated diamond devices

Includes: Supplementary data

Journal Articles

Thermal evolution of the indentation-induced phases of silicon

S. Wong, B. C. Johnson, B. Haberl, A. Mujica, J. C. McCallum, J. S. Williams, J. E. Bradby

J. Appl. Phys. 126, 105901 (2019)

https://doi.org/10.1063/1.5108751

Published: September 2019

View article titled, Thermal evolution of the indentation-induced phases of silicon

Journal Articles

Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon

C. T.-K. Lew, B. C. Johnson, J. C. McCallum

J. Appl. Phys. 124, 125701 (2018)

https://doi.org/10.1063/1.5047534

Published: September 2018

View article titled, Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon

Includes: Supplementary data

Journal Articles

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

L. H. Willems van Beveren, R. Liu, H. Bowers, K. Ganesan, B. C. Johnson, J. C. McCallum, S. Prawer

J. Appl. Phys. 119, 223902 (2016)

https://doi.org/10.1063/1.4953583

Published: June 2016

View article titled, Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Journal Articles

Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si

M. Mastromatteo, B. C. Johnson, D. De Salvador, E. Napolitani, J. C. McCallum, A. Carnera

J. Appl. Phys. 119, 115103 (2016)

https://doi.org/10.1063/1.4944321

Published: March 2016

View article titled, Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si

Journal Articles

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

A. Lohrmann, S. Castelletto, J. R. Klein, T. Ohshima, M. Bosi, M. Negri, D. W. M. Lau, B. C. Gibson, S. Prawer, J. C. McCallum, B. C. Johnson

Appl. Phys. Lett. 108, 021107 (2016)

https://doi.org/10.1063/1.4939906

Published: January 2016

View article titled, Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

Includes: Supplementary data

Journal Articles

Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium

M. Radek, H. Bracht, B. C. Johnson, J. C. McCallum, M. Posselt, B. Liedke

Appl. Phys. Lett. 107, 082112 (2015)

https://doi.org/10.1063/1.4929839

Published: August 2015

View article titled, Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium

Journal Articles

Erbium-doped slot waveguides containing size-controlled silicon nanocrystals

R. Hoffmann, J. Beyer, V. Klemm, D. Rafaja, B. C. Johnson, J. C. McCallum, J. Heitmann

J. Appl. Phys. 117, 163106 (2015)

https://doi.org/10.1063/1.4919420

Published: April 2015

View article titled, Erbium-doped slot waveguides containing size-controlled silicon nanocrystals

Journal Articles

Solid phase epitaxial regrowth of germanium containing nanoporous structures formed by ion implantation

B. C. Johnson, L. Deam, K. K. Lee, S. Rubanov, J. C. McCallum

AIP Conf. Proc. 1583, 230–234 (2014)

https://doi.org/10.1063/1.4865642

Published: February 2014

View article titled, Solid phase epitaxial regrowth of germanium containing nanoporous structures formed by ion implantation

Journal Articles

Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

B. C. Johnson, B. J. Villis, J. E. Burgess, N. Stavrias, J. C. McCallum, S. Charnvanichborikarn, J. Wong-Leung, C. Jagadish, J. S. Williams

J. Appl. Phys. 111, 094910 (2012)

https://doi.org/10.1063/1.4710991

Published: May 2012

View article titled, Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

Journal Articles

Dopant effects on solid phase epitaxy in silicon and germanium

B. C. Johnson, T. Ohshima, J. C. McCallum

J. Appl. Phys. 111, 034906 (2012)

https://doi.org/10.1063/1.3682532

Published: February 2012

View article titled, Dopant effects on solid phase epitaxy in silicon and germanium

Journal Articles

Surface damage on diamond membranes fabricated by ion implantation and lift-off

V. S. Drumm, A. D. C. Alves, B. A. Fairchild, K. Ganesan, J. C. McCallum, D. N. Jamieson, S. Prawer, S. Rubanov, R. Kalish, L. C. Feldman

Appl. Phys. Lett. 98, 231904 (2011)

https://doi.org/10.1063/1.3597223

Published: June 2011

View article titled, Surface damage on diamond membranes fabricated by ion implantation and lift-off

Journal Articles

Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

D. J. Pyke, J. C. McCallum, B. C. Johnson

J. Appl. Phys. 108, 044901 (2010)

https://doi.org/10.1063/1.3465547

Published: August 2010

View article titled, Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

Journal Articles

Effect of boron on interstitial-related luminescence centers in silicon

S. Charnvanichborikarn, B. J. Villis, B. C. Johnson, J. Wong-Leung, J. C. McCallum, J. S. Williams, C. Jagadish

Appl. Phys. Lett. 96, 051906 (2010)

https://doi.org/10.1063/1.3300836

Published: February 2010

View article titled, Effect of boron on interstitial-related luminescence centers in silicon

Journal Articles

Microstructure evolution in carbon-ion implanted sapphire

J. O. Orwa, J. L. Peng, J. C. McCallum, D. N. Jamieson, S. Rubanov, S. Prawer

J. Appl. Phys. 107, 023508 (2010)

https://doi.org/10.1063/1.3284963

Published: January 2010

View article titled, Microstructure evolution in carbon-ion implanted sapphire

Journal Articles

Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation

B. C. Johnson, J. C. McCallum, A. J. Atanacio, K. E. Prince

Appl. Phys. Lett. 95, 101911 (2009)

https://doi.org/10.1063/1.3224189

Published: September 2009

View article titled, Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation

NARROW

Topics

Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide

Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars

Donor-based qubits for quantum computing in silicon

Investigation of charge carrier trapping in H-terminated diamond devices

Thermal evolution of the indentation-induced phases of silicon

Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium

Erbium-doped slot waveguides containing size-controlled silicon nanocrystals

Solid phase epitaxial regrowth of germanium containing nanoporous structures formed by ion implantation

Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

Dopant effects on solid phase epitaxy in silicon and germanium

Surface damage on diamond membranes fabricated by ion implantation and lift-off

Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

Effect of boron on interstitial-related luminescence centers in silicon

Microstructure evolution in carbon-ion implanted sapphire

Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation

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