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Journal Articles

Effects of molecular environments on the electrical switching with memory of nitro-containing OPEs

N. Gergel-Hackett, N. Majumdar, Z. Martin, N. Swami, L. R. Harriott, J. C. Bean, G. Pattanaik, G Zangari, Y. Zhu, I. Pu, Y. Yao, J. M. Tour
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 1243–1248 (2006)
https://doi.org/10.1116/1.2208994
Published: June 2006
View article titled, Effects of molecular environments on the electrical switching with memory of nitro-containing OPEs
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Journal Articles

Nanowell device for the electrical characterization of metal–molecule–metal junctions

Nabanita Majumdar, Nadine Gergel, David Routenberg, J. C. Bean, L. R. Harriott, B. Li, L. Pu, Y. Yao, J. M. Tour
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 1417–1421 (2005)
https://doi.org/10.1116/1.1935528
Published: July 2005
View article titled, Nanowell device for the electrical characterization of metal–molecule–metal junctions
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Journal Articles

Study of the room temperature molecular memory observed from a nanowell device

N. Gergel, N. Majumdar, K. Keyvanfar, N. Swami, L. R. Harriott, J. C. Bean, Gyana Pattanaik, Giovanni Zangari, Y. Yao, J. M. Tour
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 23, 880–885 (2005)
https://doi.org/10.1116/1.1931687
Published: June 2005
View article titled, Study of the room temperature molecular memory observed from a nanowell device
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Journal Articles

Conditions for self-assembly of quantum fortresses and analysis of their possible use as quantum cellular automata

T. E. Vandervelde, R. M. Kalas, P. Kumar, T. Kobayashi, T. L. Pernell, J. C. Bean
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 043513 (2005)
https://doi.org/10.1063/1.1844620
Published: January 2005
View article titled, Conditions for self-assembly of quantum fortresses and analysis of their possible use as quantum cellular automata
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Journal Articles

Induced crystallization as a nonlithographic pattern transfer technique for nanofabrication

M. J. Cabral, W. K. Lye, J. C. Bean, M. L. Reed, T. Chraska, S. Dj. Mesarovic, R. Hull, A. B. Phillips
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 19, 2793–2796 (2001)
https://doi.org/10.1116/1.1420532
Published: November 2001
View article titled, Induced crystallization as a nonlithographic pattern transfer technique for nanofabrication
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Journal Articles

Comment on “Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy” [Appl. Phys. Lett. 71 , 3543 (1997)]

P. A. M. Rodrigues, F. Cerdeira, J. C. Bean
Journal: Applied Physics Letters
Appl. Phys. Lett. 75, 145–146 (1999)
https://doi.org/10.1063/1.124257
Published: July 1999
View article titled, Comment on “Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy” [Appl. Phys. Lett. 71 , 3543 (1997)]
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Journal Articles

Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures

E. A. Stach, R. Hull, R. M. Tromp, M. C. Reuter, M. Copel, F. K. LeGoues, J. C. Bean
Journal: Journal of Applied Physics
J. Appl. Phys. 83, 1931–1937 (1998)
https://doi.org/10.1063/1.366984
Published: February 1998
View article titled, Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures
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Journal Articles

Mechanism of organization of three-dimensional islands in SiGe/Si multilayers

E. Mateeva, P. Sutter, J. C. Bean, M. G. Lagally
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 3233–3235 (1997)
https://doi.org/10.1063/1.120300
Published: December 1997
View article titled, Mechanism of organization of three-dimensional islands in SiGe/Si multilayers
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Journal Articles

Extended-spectral-range Fourier transform infrared-attenuated total reflection spectroscopy on Si surfaces using a novel Si coated Ge attenuated total reflection prism

E. Rudkevich, D. E. Savage, W. Cai, J. C. Bean, J. S. Sullivan, S. Nayak, T. F. Kuech, L. McCaughan, M. G. Lagally
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 15, 2153–2157 (1997)
https://doi.org/10.1116/1.580622
Published: July 1997
View article titled, Extended-spectral-range Fourier transform infrared-attenuated total reflection spectroscopy on Si surfaces using a novel Si coated Ge attenuated total reflection prism
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Journal Articles

Si / SiO2 resonant cavity photodetector

D. C. Diaz, C. L. Schow, Jieming Qi, J. C. Campbell, J. C. Bean, L. J. Peticolas
Journal: Applied Physics Letters
Appl. Phys. Lett. 69, 2798–2800 (1996)
https://doi.org/10.1063/1.116847
Published: November 1996
View article titled, Si / SiO<sub>2</sub> resonant cavity photodetector
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Journal Articles

In situ reflectance monitoring of InP/InGaAsP films grown by metalorganic vapor phase epitaxy

R. M. Lum, M. L. McDonald, J. C. Bean, J. Vandenberg, T. L. Pernell, S. N. G. Chu, A. Robertson, A. Karp
Journal: Applied Physics Letters
Appl. Phys. Lett. 69, 928–930 (1996)
https://doi.org/10.1063/1.116946
Published: August 1996
View article titled, <em>In</em> <em>situ</em> reflectance monitoring of InP/InGaAsP films grown by metalorganic vapor phase epitaxy
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Journal Articles

Simple equipment tolerant reflectometry for monitoring of molecular beam epitaxy and metalorganic chemical vapor deposition growth

J. C. Bean, L. J. Peticolas, R. Lum, M. L. McDonald
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 14, 946–951 (1996)
https://doi.org/10.1116/1.580420
Published: May 1996
View article titled, Simple equipment tolerant reflectometry for monitoring of molecular beam epitaxy and metalorganic chemical vapor deposition growth
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Journal Articles

Infrared absorption of Ge epitaxial films on a GaAs substrate

M. Dubey, K. A. Jones, W. Y. Han, L. C. West, C. W. Roberts, J. P. Dunkel, L. Peticolas, J. C. Bean
Journal: Journal of Applied Physics
J. Appl. Phys. 79, 7157–7160 (1996)
https://doi.org/10.1063/1.361486
Published: May 1996
View article titled, Infrared absorption of Ge epitaxial films on a GaAs substrate
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Journal Articles

Direct observation of potential distribution across Si/Si p‐n junctions using off‐axis electron holography

M. R. McCartney, David J. Smith, Robert Hull, J. C. Bean, E. Voelkl, B. Frost
Journal: Applied Physics Letters
Appl. Phys. Lett. 65, 2603–2605 (1994)
https://doi.org/10.1063/1.112581
Published: November 1994
View article titled, Direct observation of potential distribution across Si/Si <em>p</em>‐<em>n</em> junctions using off‐axis electron holography
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Journal Articles

Photoemission measurement of equilibrium segregation at GeSi surfaces

J. E. Rowe, D. M. Riffe, G. K. Wertheim, J. C. Bean
Journal: Journal of Applied Physics
J. Appl. Phys. 76, 4915–4917 (1994)
https://doi.org/10.1063/1.357233
Published: October 1994
View article titled, Photoemission measurement of equilibrium segregation at GeSi surfaces
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Journal Articles

Asymmetric dual GeSi/Si Bragg mirror and photodetector operating at 632 and 780 nm

S. S. Murtaza, J. C. Campbell, J. C. Bean, L. J. Peticolas
Journal: Applied Physics Letters
Appl. Phys. Lett. 65, 795–797 (1994)
https://doi.org/10.1063/1.112232
Published: August 1994
View article titled, Asymmetric dual GeSi/Si Bragg mirror and photodetector operating at 632 and 780 nm
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Journal Articles

Misfit dislocation propagation kinetics in GexSi1−x/Ge(100) heterostructures

R. Hull, J. C. Bean, L. J. Peticolas, B. E. Weir, K. Prabhakaran, T. Ogino
Journal: Applied Physics Letters
Appl. Phys. Lett. 65, 327–329 (1994)
https://doi.org/10.1063/1.113023
Published: July 1994
View article titled, Misfit dislocation propagation kinetics in Ge<sub><em>x</em></sub>Si<sub>1−<em>x</em></sub>/Ge(100) heterostructures
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Journal Articles

Design and fabrication of asymmetric strained layer mirrors for optoelectronic applications

J. C. Bean, L. J. Peticolas, R. Hull, D. L. Windt, R. Kuchibhotla, J. C. Campbell
Journal: Applied Physics Letters
Appl. Phys. Lett. 63, 444–446 (1993)
https://doi.org/10.1063/1.110018
Published: July 1993
View article titled, Design and fabrication of asymmetric strained layer mirrors for optoelectronic applications
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Journal Articles

Changes in electrical device characteristics during the in situ formation of dislocations

F. M. Ross, R. Hull, D. Bahnck, J. C. Bean, L. J. Peticolas, C. A. King
Journal: Applied Physics Letters
Appl. Phys. Lett. 62, 1426–1428 (1993)
https://doi.org/10.1063/1.108649
Published: March 1993
View article titled, Changes in electrical device characteristics during the <em>in</em> <em>situ</em> formation of dislocations
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Journal Articles

Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−x alloys

R. Hull, J. C. Bean, L. J. Peticolas, D. Bahnck, B. E. Weir, L. C. Feldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 61, 2802–2804 (1992)
https://doi.org/10.1063/1.108068
Published: December 1992
View article titled, Quantitative analysis of strain relaxation in Ge<sub><em>x</em></sub>Si<sub>1−<em>x</em></sub>/Si(110) heterostructures and an accurate determination of stacking fault energy in Ge<sub><em>x</em></sub>Si<sub>1−<em>x</em></sub> alloys
Open the PDF for Quantitative analysis of strain relaxation in Ge<sub><em>x</em></sub>Si<sub>1−<em>x</em></sub>/Si(110) heterostructures and an accurate determination of stacking fault energy in Ge<sub><em>x</em></sub>Si<sub>1−<em>x</em></sub> alloys in another window