1-20 of 25
J. A. Ditzenberger
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Chemical beam epitaxial growth of strained carbon‐doped GaAs

T. H. Chiu, J. E. Cunningham, J. A. Ditzenberger, W. Y. Jan
Journal: Applied Physics Letters
Appl. Phys. Lett. 57, 171–173 (1990)
https://doi.org/10.1063/1.103974
Published: July 1990
View article titled, Chemical beam epitaxial growth of strained carbon‐doped GaAs
Open the PDF for Chemical beam epitaxial growth of strained carbon‐doped GaAs in another window
Journal Articles

Chemical beam epitaxial growth of InAs using trimethylindium and arsine

T. H. Chiu, J. A. Ditzenberger
Journal: Applied Physics Letters
Appl. Phys. Lett. 56, 2219–2221 (1990)
https://doi.org/10.1063/1.102972
Published: May 1990
View article titled, Chemical beam epitaxial growth of InAs using trimethylindium and arsine
Open the PDF for Chemical beam epitaxial growth of InAs using trimethylindium and arsine in another window
Journal Articles

Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3

T. H. Chiu, J. A. Ditzenberger, H. S. Luftman, W. T. Tsang, N. T. Ha
Journal: Applied Physics Letters
Appl. Phys. Lett. 56, 1688–1690 (1990)
https://doi.org/10.1063/1.103118
Published: April 1990
View article titled, Te doping study in molecular beam epitaxial growth of GaSb using Sb<sub>2</sub>Te<sub>3</sub>
Open the PDF for Te doping study in molecular beam epitaxial growth of GaSb using Sb<sub>2</sub>Te<sub>3</sub> in another window
Journal Articles

Quantum size effect in δ‐doped AlGaAs heterostructures

J. E. Cunningham, W. T. Tsang, E. F. Schubert, G. Timp, T. H. Chiu, A. Chang, E. Agyekum, J. A. Ditzenberger
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 6, 599–602 (1988)
https://doi.org/10.1116/1.584407
Published: March 1988
View article titled, Quantum size effect in δ‐doped AlGaAs heterostructures
Open the PDF for Quantum size effect in δ‐doped AlGaAs heterostructures in another window
Journal Articles

1.5‐μm GaInAsP planar buried heterostructure lasers grown using chemical‐beam‐epitaxial base structures

W. T. Tsang, J. E. Bowers, E. G. Burkhardt, J. A. Ditzenberger, D. P. Wilt, N. K. Dutta, S. G. Napholtz, T. M. Shen, Y. Twu, R. A. Logan
Journal: Journal of Applied Physics
J. Appl. Phys. 63, 1218–1220 (1988)
https://doi.org/10.1063/1.339984
Published: February 1988
View article titled, 1.5‐μm GaInAsP planar buried heterostructure lasers grown using chemical‐beam‐epitaxial base structures
Open the PDF for 1.5‐μm GaInAsP planar buried heterostructure lasers grown using chemical‐beam‐epitaxial base structures in another window
Journal Articles

Growth of high‐quality GaxIn1−xAsyP1−y by chemical beam epitaxy

W. T. Tsang, E. F. Schubert, T. H. Chiu, J. E. Cunningham, E. G. Burkhardt, J. A. Ditzenberger, E. Agyekum
Journal: Applied Physics Letters
Appl. Phys. Lett. 51, 761–763 (1987)
https://doi.org/10.1063/1.98859
Published: September 1987
View article titled, Growth of high‐quality Ga<sub><em>x</em></sub>In<sub>1−<em>x</em></sub>As<sub><em>y</em></sub>P<sub>1−<em>y</em></sub> by chemical beam epitaxy
Open the PDF for Growth of high‐quality Ga<sub><em>x</em></sub>In<sub>1−<em>x</em></sub>As<sub><em>y</em></sub>P<sub>1−<em>y</em></sub> by chemical beam epitaxy in another window
Journal Articles

Summary Abstract: High purity molecular beam epitaxy grown AlGaAs

J. E. Cunningham, W. T. Tsang, T. H. Chiu, E. F. Schubert, J. A. Ditzenberger
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 5, 761 (1987)
https://doi.org/10.1116/1.583787
Published: May 1987
View article titled, Summary Abstract: High purity molecular beam epitaxy grown AlGaAs
Open the PDF for Summary Abstract: High purity molecular beam epitaxy grown AlGaAs in another window
Journal Articles

Doping studies using thermal beams in chemical‐beam epitaxy

W. T. Tsang, B. Tell, J. A. Ditzenberger, A. H. Dayem
Journal: Journal of Applied Physics
J. Appl. Phys. 60, 4182–4185 (1986)
https://doi.org/10.1063/1.337503
Published: December 1986
View article titled, Doping studies using thermal beams in chemical‐beam epitaxy
Open the PDF for Doping studies using thermal beams in chemical‐beam epitaxy in another window
Journal Articles

Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy

T. H. Chiu, W. T. Tsang, J. A. Ditzenberger, J. P. van der Ziel
Journal: Applied Physics Letters
Appl. Phys. Lett. 49, 1051–1052 (1986)
https://doi.org/10.1063/1.97471
Published: October 1986
View article titled, Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy
Open the PDF for Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy in another window
Journal Articles

Two‐dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy

W. T. Tsang, A. M. Chang, J. A. Ditzenberger, N. Tabatabaie
Journal: Applied Physics Letters
Appl. Phys. Lett. 49, 960–962 (1986)
https://doi.org/10.1063/1.97495
Published: October 1986
View article titled, Two‐dimensional electron gas in a Ga<sub>0.47</sub>In<sub>0.53</sub>As/InP heterojunction grown by chemical beam epitaxy
Open the PDF for Two‐dimensional electron gas in a Ga<sub>0.47</sub>In<sub>0.53</sub>As/InP heterojunction grown by chemical beam epitaxy in another window
Journal Articles

Chemical beam epitaxial growth of extremely high quality InGaAs on InP

W. T. Tsang, A. H. Dayem, T. H. Chiu, J. E. Cunningham, E. F. Schubert, J. A. Ditzenberger, J. Shah, J. L. Zyskind, N. Tabatabaie
Journal: Applied Physics Letters
Appl. Phys. Lett. 49, 170–172 (1986)
https://doi.org/10.1063/1.97214
Published: July 1986
View article titled, Chemical beam epitaxial growth of extremely high quality InGaAs on InP
Open the PDF for Chemical beam epitaxial growth of extremely high quality InGaAs on InP in another window
Journal Articles

Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice matched to (100) GaSb by molecular‐beam epitaxy

T. H. Chiu, W. T. Tsang, J. A. Ditzenberger, S. N. G. Chu, J. P. van der Ziel
Journal: Journal of Applied Physics
J. Appl. Phys. 60, 205–207 (1986)
https://doi.org/10.1063/1.337682
Published: July 1986
View article titled, Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice matched to (100) GaSb by molecular‐beam epitaxy
Open the PDF for Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice matched to (100) GaSb by molecular‐beam epitaxy in another window
Journal Articles

Summary Abstract: Molecular beam epitaxial growth of abrupt InAsSb/GaSb heterostructures and superlattices lattice‐matched to GaSb(100)

T. H. Chiu, W. T. Tsang, J. A. Ditzenberger
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 4, 600 (1986)
https://doi.org/10.1116/1.583385
Published: March 1986
View article titled, Summary Abstract: Molecular beam epitaxial growth of abrupt InAsSb/GaSb heterostructures and superlattices lattice‐matched to GaSb(100)
Open the PDF for Summary Abstract: Molecular beam epitaxial growth of abrupt InAsSb/GaSb heterostructures and superlattices lattice‐matched to GaSb(100) in another window
Journal Articles

GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52 superlattice lattice matched to InP prepared by molecular beam epitaxy

W. T. Tsang, T. H. Chiu, S. N. G. Chu, J. A. Ditzenberger
Journal: Applied Physics Letters
Appl. Phys. Lett. 46, 659–661 (1985)
https://doi.org/10.1063/1.95520
Published: April 1985
View article titled, GaSb<sub>0.5</sub>As<sub>0.5</sub>/Al<sub>0.35</sub>Ga<sub>0.65</sub>Sb<sub>0.48</sub>As<sub>0.52</sub> superlattice lattice matched to InP prepared by molecular beam epitaxy
Open the PDF for GaSb<sub>0.5</sub>As<sub>0.5</sub>/Al<sub>0.35</sub>Ga<sub>0.65</sub>Sb<sub>0.48</sub>As<sub>0.52</sub> superlattice lattice matched to InP prepared by molecular beam epitaxy in another window
Journal Articles

Molecular beam epitaxy of GaSb0.5As0.5 and AlxGa1−xSbyAs1−y lattice matched to InP

T. H. Chiu, W. T. Tsang, S. N. G. Chu, J. Shah, J. A. Ditzenberger
Journal: Applied Physics Letters
Appl. Phys. Lett. 46, 408–410 (1985)
https://doi.org/10.1063/1.95595
Published: February 1985
View article titled, Molecular beam epitaxy of GaSb<sub>0.5</sub>As<sub>0.5</sub> and Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>Sb<sub><em>y</em></sub>As<sub>1−<em>y</em></sub> lattice matched to InP
Open the PDF for Molecular beam epitaxy of GaSb<sub>0.5</sub>As<sub>0.5</sub> and Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>Sb<sub><em>y</em></sub>As<sub>1−<em>y</em></sub> lattice matched to InP in another window
Journal Articles

Molecular beam epitaxial growth of In1−xGaxAs1−ySby lattice matched to GaSb

W. T. Tsang, T. H. Chiu, D. W. Kisker, J. A. Ditzenberger
Journal: Applied Physics Letters
Appl. Phys. Lett. 46, 283–285 (1985)
https://doi.org/10.1063/1.95659
Published: February 1985
View article titled, Molecular beam epitaxial growth of In<sub>1−<em>x</em></sub>Ga<sub><em>x</em></sub>As<sub>1−<em>y</em></sub>Sb<sub><em>y</em></sub> lattice matched to GaSb
Open the PDF for Molecular beam epitaxial growth of In<sub>1−<em>x</em></sub>Ga<sub><em>x</em></sub>As<sub>1−<em>y</em></sub>Sb<sub><em>y</em></sub> lattice matched to GaSb in another window
Journal Articles

Single‐longitudinal mode performance characteristics of cleaved‐coupled‐cavity lasers

W. T. Tsang, N. A. Olsson, R. A. Logan, J. A. Ditzenberger, I. P. Kaminow, J.‐S. Ko
Journal: Applied Physics Letters
Appl. Phys. Lett. 43, 1003–1005 (1983)
https://doi.org/10.1063/1.94222
Published: December 1983
View article titled, Single‐longitudinal mode performance characteristics of cleaved‐coupled‐cavity lasers
Open the PDF for Single‐longitudinal mode performance characteristics of cleaved‐coupled‐cavity lasers in another window
Journal Articles

Multilongitudinal mode operation in angled stripe buried heterostructure lasers

W. T. Tsang, R. A. Logan, J. A. Ditzenberger
Journal: Journal of Applied Physics
J. Appl. Phys. 54, 1137–1140 (1983)
https://doi.org/10.1063/1.332134
Published: February 1983
View article titled, Multilongitudinal mode operation in angled stripe buried heterostructure lasers
Open the PDF for Multilongitudinal mode operation in angled stripe buried heterostructure lasers in another window
Journal Articles

1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy

W. T. Tsang, F. K. Reinhart, J. A. Ditzenberger
Journal: Applied Physics Letters
Appl. Phys. Lett. 41, 1094–1096 (1982)
https://doi.org/10.1063/1.93377
Published: December 1982
View article titled, 1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy
Open the PDF for 1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy in another window
Journal Articles

A visible (AlGa)As heterostructure laser grown by molecular beam epitaxy

W. T. Tsang, J. A. Ditzenberger
Journal: Applied Physics Letters
Appl. Phys. Lett. 39, 193–194 (1981)
https://doi.org/10.1063/1.92699
Published: August 1981
View article titled, A visible (AlGa)As heterostructure laser grown by molecular beam epitaxy
Open the PDF for A visible (AlGa)As heterostructure laser grown by molecular beam epitaxy in another window