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1-17 of 17
Isao Sakata
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Journal Articles
Carrier trapping in diamond Schottky barrier diode
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 073505 (2024)
Published: February 2024
Journal Articles
Journal Articles
Plasma processing and annealing for defect management at SiO2/Si interface
Available to Purchase
J. Vac. Sci. Technol. B 41, 052202 (2023)
Published: August 2023
Journal Articles
Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 128, 033302 (2020)
Published: July 2020
Journal Articles
Journal Articles
Oxygen-atmosphere heat treatment in spin-on doping process for improving the performance of crystalline silicon solar cells
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 96, 153503 (2010)
Published: April 2010
Journal Articles
Electrical properties of C-doped p -type GaP and GaPN grown by molecular beam epitaxy
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 96, 032106 (2010)
Published: January 2010
Journal Articles
Stimulated resonance Raman scattering from dye-doped polymer waveguides
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 88, 191104 (2006)
Published: May 2006
Journal Articles
Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 96, 7532–7536 (2004)
Published: December 2004
Journal Articles
Journal Articles
Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 80, 4115–4117 (2002)
Published: June 2002
Journal Articles
Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 80, 1159–1161 (2002)
Published: February 2002
Journal Articles
Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 90, 1067–1069 (2001)
Published: July 2001
Journal Articles
Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process
Available to PurchaseToshiyuki Tsutsumi, Kenichi Ishii, Hiroshi Hiroshima, Sukti Hazra, Mitsuyuki Yamanaka, Isao Sakata, Hirohisa Taguchi, Eiichi Suzuki, Kazutaka Tomizawa
J. Vac. Sci. Technol. B 18, 2640–2645 (2000)
Published: November 2000
Journal Articles
Defects in plasma‐deposited hydrogenated amorphous silicon prepared under visible light illumination
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 69, 2561–2567 (1991)
Published: February 1991
Journal Articles
A general method for obtaining Clebsch‐Gordan coefficients of finite groups. I. Its application to point and space groups
Available to Purchase
Journal:
Journal of Mathematical Physics
J. Math. Phys. 15, 1702–1709 (1974)
Published: October 1974
Journal Articles
A general method for obtaining Clebsch‐Gordan coefficients of finite groups. II. Extension to antiunitary groups
Available to Purchase
Journal:
Journal of Mathematical Physics
J. Math. Phys. 15, 1710–1711 (1974)
Published: October 1974