1-17 of 17
Isao Sakata
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Carrier trapping in diamond Schottky barrier diode

Available to Purchase
Shota Nunomura, Isao Sakata, Taiki Nishida, Shinya Ohmagari
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 073505 (2024)
https://doi.org/10.1063/5.0190729
Published: February 2024
View articletitled, Carrier trapping in diamond Schottky barrier diode
Open the PDF for Carrier trapping in diamond Schottky barrier diode in another window
Journal Articles

O2 and Ar plasma processing over SiO2/Si stack: Effects of processing gas on interface defect generation and recovery

Open Access
Shota Nunomura, Takayoshi Tsutsumi, Isao Sakata, Masaru Hori
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 053301 (2024)
https://doi.org/10.1063/5.0184779
Published: February 2024
View articletitled, O2 and Ar plasma processing over SiO2/Si stack: Effects of processing gas on interface defect generation and recovery
Open the PDF for O2 and Ar plasma processing over SiO2/Si stack: Effects of processing gas on interface defect generation and recovery in another window
Journal Articles

Plasma processing and annealing for defect management at SiO2/Si interface

Available to Purchase
Shota Nunomura, Takayoshi Tsutsumi, Isao Sakata, Masaru Hori
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052202 (2023)
https://doi.org/10.1116/6.0002822
Published: August 2023
View articletitled, Plasma processing and annealing for defect management at SiO2/Si interface
Open the PDF for Plasma processing and annealing for defect management at SiO2/Si interface in another window
Journal Articles

Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer

Available to Purchase
Shota Nunomura, Isao Sakata, Hajime Sakakita, Kazunori Koga, Masaharu Shiratani
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 033302 (2020)
https://doi.org/10.1063/5.0011563
Published: July 2020
View articletitled, Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer
Open the PDF for Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer in another window
Journal Articles

Formation of electronic defects in crystalline silicon during hydrogen plasma treatment

Open Access
Shota Nunomura, Isao Sakata, Koji Matsubara
Journal: AIP Advances
AIP Advances 9, 045110 (2019)
https://doi.org/10.1063/1.5089202
Published: April 2019
View articletitled, Formation of electronic defects in crystalline silicon during hydrogen plasma treatment
Open the PDF for Formation of electronic defects in crystalline silicon during hydrogen plasma treatment in another window
Journal Articles

Oxygen-atmosphere heat treatment in spin-on doping process for improving the performance of crystalline silicon solar cells

Available to Purchase
Zhengxin Liu (劉正新), Hidetaka Takato (高遠秀尚), Chiho Togashi (富樫千穂), Isao Sakata (坂田功)
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 153503 (2010)
https://doi.org/10.1063/1.3394005
Published: April 2010
View articletitled, Oxygen-atmosphere heat treatment in spin-on doping process for improving the performance of crystalline silicon solar cells
Open the PDF for Oxygen-atmosphere heat treatment in spin-on doping process for improving the performance of crystalline silicon solar cells in another window
Journal Articles

Electrical properties of C-doped p -type GaP and GaPN grown by molecular beam epitaxy

Available to Purchase
Zhengxin Liu (劉正新), Hitoshi Kawanami (川浪仁志), Isao Sakata (坂田功)
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 032106 (2010)
https://doi.org/10.1063/1.3291664
Published: January 2010
View articletitled, Electrical properties of C-doped p -type GaP and GaPN grown by molecular beam epitaxy
Open the PDF for Electrical properties of C-doped p -type GaP and GaPN grown by molecular beam epitaxy in another window
Journal Articles

Stimulated resonance Raman scattering from dye-doped polymer waveguides

Available to Purchase
Isao Sakata, Shuhei Fujimoto, Hisao Yanagi
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 191104 (2006)
https://doi.org/10.1063/1.2203509
Published: May 2006
View articletitled, Stimulated resonance Raman scattering from dye-doped polymer waveguides
Open the PDF for Stimulated resonance Raman scattering from dye-doped polymer waveguides in another window
Journal Articles

Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon

Available to Purchase
Sukti Hazra, Isao Sakata, Mitsuyuki Yamanaka, Eiichi Suzuki
Journal: Journal of Applied Physics
J. Appl. Phys. 96, 7532–7536 (2004)
https://doi.org/10.1063/1.1814172
Published: December 2004
View articletitled, Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon
Open the PDF for Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon in another window
Journal Articles

Response to comment on “Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films” [J. Appl. Phys. 90 , 1067 (2001)]

Free
Sukti Hazra, Isao Sakata, Mitsuyuki Yamanaka, Eiichi Suzuki
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 2937 (2004)
https://doi.org/10.1063/1.1644629
Published: March 2004
View articletitled, Response to comment on “Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films” [J. Appl. Phys. 90 , 1067 (2001)]
Open the PDF for Response to comment on “Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films” [J. Appl. Phys. 90 , 1067 (2001)] in another window
Journal Articles

Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing

Available to Purchase
Sukti Hazra, Isao Sakata, Mitsuyuki Yamanaka, Eiichi Suzuki
Journal: Applied Physics Letters
Appl. Phys. Lett. 80, 4115–4117 (2002)
https://doi.org/10.1063/1.1482795
Published: June 2002
View articletitled, Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing
Open the PDF for Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing in another window
Journal Articles

Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films

Available to Purchase
Sukti Hazra, Isao Sakata, Mitsuyuki Yamanaka, Eiichi Suzuki
Journal: Applied Physics Letters
Appl. Phys. Lett. 80, 1159–1161 (2002)
https://doi.org/10.1063/1.1450046
Published: February 2002
View articletitled, Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films
Open the PDF for Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films in another window
Journal Articles

Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films

Available to Purchase
Sukti Hazra, Isao Sakata, Mitsuyuki Yamanaka, Eiichi Suzuki
Journal: Journal of Applied Physics
J. Appl. Phys. 90, 1067–1069 (2001)
https://doi.org/10.1063/1.1377299
Published: July 2001
View articletitled, Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films
Open the PDF for Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films in another window
Journal Articles

Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process

Available to Purchase
Toshiyuki Tsutsumi, Kenichi Ishii, Hiroshi Hiroshima, Sukti Hazra, Mitsuyuki Yamanaka, Isao Sakata, Hirohisa Taguchi, Eiichi Suzuki, Kazutaka Tomizawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 2640–2645 (2000)
https://doi.org/10.1116/1.1314373
Published: November 2000
View articletitled, Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process
Open the PDF for Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process in another window
Journal Articles

Defects in plasma‐deposited hydrogenated amorphous silicon prepared under visible light illumination

Available to Purchase
Isao Sakata, Mitsuyuki Yamanaka, Yutaka Hayashi
Journal: Journal of Applied Physics
J. Appl. Phys. 69, 2561–2567 (1991)
https://doi.org/10.1063/1.348664
Published: February 1991
View articletitled, Defects in plasma‐deposited hydrogenated amorphous silicon prepared under visible light illumination
Open the PDF for Defects in plasma‐deposited hydrogenated amorphous silicon prepared under visible light illumination in another window
Journal Articles

A general method for obtaining Clebsch‐Gordan coefficients of finite groups. I. Its application to point and space groups

Available to Purchase
Isao Sakata
Journal: Journal of Mathematical Physics
J. Math. Phys. 15, 1702–1709 (1974)
https://doi.org/10.1063/1.1666528
Published: October 1974
View articletitled, A general method for obtaining Clebsch‐Gordan coefficients of finite groups. I. Its application to point and space groups
Open the PDF for A general method for obtaining Clebsch‐Gordan coefficients of finite groups. I. Its application to point and space groups in another window
Journal Articles

A general method for obtaining Clebsch‐Gordan coefficients of finite groups. II. Extension to antiunitary groups

Available to Purchase
Isao Sakata
Journal: Journal of Mathematical Physics
J. Math. Phys. 15, 1710–1711 (1974)
https://doi.org/10.1063/1.1666529
Published: October 1974
View articletitled, A general method for obtaining Clebsch‐Gordan coefficients of finite groups. II. Extension to antiunitary groups
Open the PDF for A general method for obtaining Clebsch‐Gordan coefficients of finite groups. II. Extension to antiunitary groups in another window