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Journal Articles

Plasma processing and annealing for defect management at SiO₂/Si interface

Shota Nunomura, Takayoshi Tsutsumi, Isao Sakata, Masaru Hori

J. Vac. Sci. Technol. B 41, 052202 (2023)

https://doi.org/10.1116/6.0002822

Published: August 2023

View article titled, Plasma processing and annealing for defect management at SiO<sub>2</sub>/Si interface

Journal Articles

Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer

Shota Nunomura, Isao Sakata, Hajime Sakakita, Kazunori Koga, Masaharu Shiratani

J. Appl. Phys. 128, 033302 (2020)

https://doi.org/10.1063/5.0011563

Published: July 2020

View article titled, Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer

Journal Articles

Formation of electronic defects in crystalline silicon during hydrogen plasma treatment

Shota Nunomura, Isao Sakata, Koji Matsubara

AIP Advances 9, 045110 (2019)

https://doi.org/10.1063/1.5089202

Published: April 2019

View article titled, Formation of electronic defects in crystalline silicon during hydrogen plasma treatment

Journal Articles

Oxygen-atmosphere heat treatment in spin-on doping process for improving the performance of crystalline silicon solar cells

Zhengxin Liu (劉正新), Hidetaka Takato (高遠秀尚), Chiho Togashi (富樫千穂), Isao Sakata (坂田功)

Appl. Phys. Lett. 96, 153503 (2010)

https://doi.org/10.1063/1.3394005

Published: April 2010

View article titled, Oxygen-atmosphere heat treatment in spin-on doping process for improving the performance of crystalline silicon solar cells

Journal Articles

Electrical properties of C-doped p -type GaP and GaPN grown by molecular beam epitaxy

Zhengxin Liu (劉正新), Hitoshi Kawanami (川浪仁志), Isao Sakata (坂田功)

Appl. Phys. Lett. 96, 032106 (2010)

https://doi.org/10.1063/1.3291664

Published: January 2010

View article titled, Electrical properties of C-doped p -type GaP and GaPN grown by molecular beam epitaxy

Journal Articles

Stimulated resonance Raman scattering from dye-doped polymer waveguides

Isao Sakata, Shuhei Fujimoto, Hisao Yanagi

Appl. Phys. Lett. 88, 191104 (2006)

https://doi.org/10.1063/1.2203509

Published: May 2006

View article titled, Stimulated resonance Raman scattering from dye-doped polymer waveguides

Journal Articles

Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon

Sukti Hazra, Isao Sakata, Mitsuyuki Yamanaka, Eiichi Suzuki

J. Appl. Phys. 96, 7532–7536 (2004)

https://doi.org/10.1063/1.1814172

Published: December 2004

View article titled, Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon

Journal Articles

Response to comment on “Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films” [J. Appl. Phys. 90 , 1067 (2001)]

Sukti Hazra, Isao Sakata, Mitsuyuki Yamanaka, Eiichi Suzuki

J. Appl. Phys. 95, 2937 (2004)

https://doi.org/10.1063/1.1644629

Published: February 2004

View article titled, Response to comment on “Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films” [J. Appl. Phys. 90 , 1067 (2001)]

Journal Articles

A general method for obtaining Clebsch‐Gordan coefficients of finite groups. I. Its application to point and space groups

Isao Sakata

J. Math. Phys. 15, 1702–1709 (1974)

https://doi.org/10.1063/1.1666528

Published: November 2003

View article titled, A general method for obtaining Clebsch‐Gordan coefficients of finite groups. I. Its application to point and space groups

Journal Articles

A general method for obtaining Clebsch‐Gordan coefficients of finite groups. II. Extension to antiunitary groups

Isao Sakata

J. Math. Phys. 15, 1710–1711 (1974)

https://doi.org/10.1063/1.1666529

Published: November 2003

View article titled, A general method for obtaining Clebsch‐Gordan coefficients of finite groups. II. Extension to antiunitary groups

Journal Articles

Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing

Sukti Hazra, Isao Sakata, Mitsuyuki Yamanaka, Eiichi Suzuki

Appl. Phys. Lett. 80, 4115–4117 (2002)

https://doi.org/10.1063/1.1482795

Published: May 2002

View article titled, Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing

Journal Articles

Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films

Sukti Hazra, Isao Sakata, Mitsuyuki Yamanaka, Eiichi Suzuki

Appl. Phys. Lett. 80, 1159–1161 (2002)

https://doi.org/10.1063/1.1450046

Published: February 2002

View article titled, Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films

Journal Articles

Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films

Sukti Hazra, Isao Sakata, Mitsuyuki Yamanaka, Eiichi Suzuki

J. Appl. Phys. 90, 1067–1069 (2001)

https://doi.org/10.1063/1.1377299

Published: July 2001

View article titled, Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films

Journal Articles

Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process

Toshiyuki Tsutsumi, Kenichi Ishii, Hiroshi Hiroshima, Sukti Hazra, Mitsuyuki Yamanaka, Isao Sakata, Hirohisa Taguchi, Eiichi Suzuki, Kazutaka Tomizawa

J. Vac. Sci. Technol. B 18, 2640–2645 (2000)

https://doi.org/10.1116/1.1314373

Published: November 2000

View article titled, Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process

Journal Articles

Defects in plasma‐deposited hydrogenated amorphous silicon prepared under visible light illumination

Isao Sakata, Mitsuyuki Yamanaka, Yutaka Hayashi

J. Appl. Phys. 69, 2561–2567 (1991)

https://doi.org/10.1063/1.348664

Published: February 1991

View article titled, Defects in plasma‐deposited hydrogenated amorphous silicon prepared under visible light illumination

NARROW

Topics

Plasma processing and annealing for defect management at SiO₂/Si interface

Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer

Formation of electronic defects in crystalline silicon during hydrogen plasma treatment

Oxygen-atmosphere heat treatment in spin-on doping process for improving the performance of crystalline silicon solar cells

Electrical properties of C-doped p -type GaP and GaPN grown by molecular beam epitaxy

Stimulated resonance Raman scattering from dye-doped polymer waveguides

Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon

Response to comment on “Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films” [J. Appl. Phys. 90 , 1067 (2001)]

A general method for obtaining Clebsch‐Gordan coefficients of finite groups. I. Its application to point and space groups

A general method for obtaining Clebsch‐Gordan coefficients of finite groups. II. Extension to antiunitary groups

Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing

Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films

Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films

Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process

Defects in plasma‐deposited hydrogenated amorphous silicon prepared under visible light illumination

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