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Journal Articles

Sputtering induced the architecture of “needle mushroom” shaped Cu₂O–NiCo₂O₄ heterostructure with novel morphology and abundant interface for high-efficiency electrochemical water oxidation

Kai Chen, Jaehong Park, Sunny Yadav, Gyucheol Kim, Vandung Dao, Periyayya Uthirakumar, In-Hwan Lee

J. Chem. Phys. 161, 194707 (2024)

https://doi.org/10.1063/5.0221991

Published: November 2024

View articletitled, Sputtering induced the architecture of “needle mushroom” shaped Cu2O–NiCo2O4 heterostructure with novel morphology and abundant interface for high-efficiency electrochemical water oxidation

Journal Articles

Transport and trap states in proton irradiated ultra-thick κ-Ga₂O₃

A. Y. Polyakov, V. I. Nikolaev, A. I. Pechnikov, E. B. Yakimov, P. B. Lagov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, A. V. Chernykh, In-Hwan Lee, S. J. Pearton

J. Vac. Sci. Technol. A 41, 032705 (2023)

https://doi.org/10.1116/6.0002673

Published: April 2023

View articletitled, Transport and trap states in proton irradiated ultra-thick κ-Ga2O3

Includes: Supplementary data

Journal Articles

Thermal versus radiation-assisted defect annealing in β-Ga₂O₃

Alexander Azarov, Vishnukanthan Venkatachalapathy, In-Hwan Lee, Andrej Kuznetsov

J. Vac. Sci. Technol. A 41, 023101 (2023)

https://doi.org/10.1116/6.0002388

Published: January 2023

View articletitled, Thermal versus radiation-assisted defect annealing in β-Ga2O3

Journal Articles

Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification

Alexander Azarov, Vishnukanthan Venkatachalapathy, Lasse Vines, Edouard Monakhov, In-Hwan Lee, Andrej Kuznetsov

Appl. Phys. Lett. 119, 182103 (2021)

https://doi.org/10.1063/5.0070045

Published: November 2021

View articletitled, Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification

Includes: Supplementary data

Journal Articles

Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga₂O₃

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, A. V. Chernykh, P. B. Lagov, Yu. S. Pavlov, V. S. Stolbunov, T. V. Kulevoy, I. V. Borzykh, In-Hwan Lee, Fan Ren, S. J. Pearton

J. Appl. Phys. 130, 035701 (2021)

https://doi.org/10.1063/5.0058555

Published: July 2021

View articletitled, Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3

Journal Articles

Parasitic p–n junctions formed at V-pit defects in p-GaN

P. S. Vergeles, E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, A. V. Chernykh, A. A. Vasilev, A. I. Kochkova, In-Hwan Lee, Stephen J. Pearton

J. Appl. Phys. 129, 155702 (2021)

https://doi.org/10.1063/5.0047742

Published: April 2021

View articletitled, Parasitic p–n junctions formed at V-pit defects in p-GaN

Journal Articles

Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si

Geunhwan Ryu, Seungwan Woo, Soo Seok Kang, Rafael Jumar Chu, Jae-Hoon Han, In-Hwan Lee, Daehwan Jung, Won Jun Choi

Appl. Phys. Lett. 117, 262106 (2020)

https://doi.org/10.1063/5.0032027

Published: December 2020

View articletitled, Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si

Journal Articles

Anisotropy of hydrogen plasma effects in bulk n-type β-Ga₂O₃

A. Y. Polyakov, In-Hwan Lee, Andrew Miakonkikh, A. V. Chernykh, N. B. Smirnov, I. V. Shchemerov, A. I. Kochkova, A. A. Vasilev, S. J. Pearton

J. Appl. Phys. 127, 175702 (2020)

https://doi.org/10.1063/1.5145277

Published: May 2020

View articletitled, Anisotropy of hydrogen plasma effects in bulk n-type β-Ga2O3

Journal Articles

Hydrogen plasma treatment of β -Ga₂O₃: Changes in electrical properties and deep trap spectra

A. Y. Polyakov, In-Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, F. Ren, P. H. Carey, IV, S. J. Pearton

Appl. Phys. Lett. 115, 032101 (2019)

https://doi.org/10.1063/1.5108790

Published: July 2019

View articletitled, Hydrogen plasma treatment of β -Ga2O3: Changes in electrical properties and deep trap spectra

Journal Articles

Defects at the surface of β -Ga₂O₃ produced by Ar plasma exposure

A. Y. Polyakov, In-Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, P. H. Carey, F. Ren, David J. Smith, S. J. Pearton

APL Mater. 7, 061102 (2019)

https://doi.org/10.1063/1.5109025

Published: June 2019

View articletitled, Defects at the surface of β -Ga2O3 produced by Ar plasma exposure

Journal Articles

Deep trap analysis in green light emitting diodes: Problems and solutions

A. Y. Polyakov, N. M. Shmidt, N. B. Smirnov, I. V. Shchemerov, E. I. Shabunina, N. A. Tal’nishnih, In-Hwan Lee, L. A. Alexanyan, S. A. Tarelkin, S. J. Pearton

J. Appl. Phys. 125, 215701 (2019)

https://doi.org/10.1063/1.5093723

Published: June 2019

View articletitled, Deep trap analysis in green light emitting diodes: Problems and solutions

Journal Articles

Electrical properties, structural properties, and deep trap spectra of thin α -Ga₂O₃ films grown by halide vapor phase epitaxy on basal plane sapphire substrates

Dae-Woo Jeon, Hoki Son, Jonghee Hwang, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, S. J. Pearton, In-Hwan Lee

APL Mater. 6, 121110 (2018)

https://doi.org/10.1063/1.5075718

Published: December 2018

View articletitled, Electrical properties, structural properties, and deep trap spectra of thin α -Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates

Journal Articles

Recombination properties of dislocations in GaN

Eugene B. Yakimov, Alexander Y. Polyakov, In-Hwan Lee, Stephen J. Pearton

J. Appl. Phys. 123, 161543 (2018)

https://doi.org/10.1063/1.4995580

Published: December 2017

View articletitled, Recombination properties of dislocations in GaN

Journal Articles

Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, P. B. Lagov, R. A. Zinov'ev, E. B. Yakimov, K. D. Shcherbachev, S. J. Pearton

J. Appl. Phys. 122, 115704 (2017)

https://doi.org/10.1063/1.5000956

Published: September 2017

View articletitled, Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

Journal Articles

Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs

In-Hwan Lee, A. Y. Polyakov, Sung-Min Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal'nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, S. J. Pearton

Appl. Phys. Lett. 111, 062103 (2017)

https://doi.org/10.1063/1.4985190

Published: August 2017

View articletitled, Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs

Journal Articles

Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, R. A. Zinovyev, Kang-Bin Bae, Tae-Hoon Chung, Sung-Min Hwang, J. H. Baek, S. J. Pearton

Appl. Phys. Lett. 110, 192107 (2017)

https://doi.org/10.1063/1.4983556

Published: May 2017

View articletitled, Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

Journal Articles

Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy

In-Hwan Lee, A. Y. Polyakov, E. B. Yakimov, N. B. Smirnov, I. V. Shchemerov, S. A. Tarelkin, S. I. Didenko, K. I. Tapero, R. A. Zinovyev, S. J. Pearton

Appl. Phys. Lett. 110, 112102 (2017)

https://doi.org/10.1063/1.4978641

Published: March 2017

View articletitled, Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy

Journal Articles

Effect of nanopillar sublayer embedded with SiO₂ on deep traps in green GaN/InGaN light emitting diodes

In-Hwan Lee, Han-Su Cho, K. B. Bae, A. Y. Polyakov, N. B. Smirnov, R. A. Zinovyev, J. H. Baek, Tae-Hoon Chung, I. V. Shchemerov, E. S. Kondratyev, S. J. Pearton

J. Appl. Phys. 121, 045108 (2017)

https://doi.org/10.1063/1.4974971

Published: January 2017

View articletitled, Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes

Journal Articles

Current relaxation analysis in AlGaN/GaN high electron mobility transistors

Alexander Y. Polyakov, N. B. Smirnov, Ivan V. Shchemerov, In-Hwan Lee, Taehoon Jang, Alexey A. Dorofeev, Nadezhda B. Gladysheva, Eugene S. Kondratyev, Yulia A. Turusova, Roman A. Zinovyev, A. V. Turutin, Fan Ren, S. J. Pearton

J. Vac. Sci. Technol. B 35, 011207 (2017)

https://doi.org/10.1116/1.4973973

Published: January 2017

View articletitled, Current relaxation analysis in AlGaN/GaN high electron mobility transistors

Journal Articles

Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, S. A. Tarelkin, A. V. Turutin, I. V. Shemerov, S. J. Pearton

J. Appl. Phys. 119, 205109 (2016)

https://doi.org/10.1063/1.4952734

Published: May 2016

View articletitled, Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

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Sputtering induced the architecture of “needle mushroom” shaped Cu₂O–NiCo₂O₄ heterostructure with novel morphology and abundant interface for high-efficiency electrochemical water oxidation

Transport and trap states in proton irradiated ultra-thick κ-Ga₂O₃

Thermal versus radiation-assisted defect annealing in β-Ga₂O₃

Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification

Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga₂O₃

Parasitic p–n junctions formed at V-pit defects in p-GaN

Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si

Anisotropy of hydrogen plasma effects in bulk n-type β-Ga₂O₃

Hydrogen plasma treatment of β -Ga₂O₃: Changes in electrical properties and deep trap spectra

Defects at the surface of β -Ga₂O₃ produced by Ar plasma exposure

Deep trap analysis in green light emitting diodes: Problems and solutions

Electrical properties, structural properties, and deep trap spectra of thin α -Ga₂O₃ films grown by halide vapor phase epitaxy on basal plane sapphire substrates

Recombination properties of dislocations in GaN

Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs

Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy

Effect of nanopillar sublayer embedded with SiO₂ on deep traps in green GaN/InGaN light emitting diodes

Current relaxation analysis in AlGaN/GaN high electron mobility transistors

Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

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