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Journal Articles

Fabrication of nanowires with high aspect ratios utilized by dry etching with SF 6 : C 4 F 8 and self-limiting thermal oxidation on Si substrate

Si-Young Park, Sandro J. Di Giacomo, R. Anisha, Paul R. Berger, Phillip E. Thompson, Ilesanmi Adesida

J. Vac. Sci. Technol. B 28, 763–768 (2010)

https://doi.org/10.1116/1.3455498

Published: July 2010

View article titled, Fabrication of nanowires with high aspect ratios utilized by dry etching with SF 6 : C 4 F 8 and self-limiting thermal oxidation on Si substrate

Journal Articles

Ultradense gold nanostructures fabricated using hydrogen silsesquioxane resist and applications for surface-enhanced Raman spectroscopy

Sookyung Choi, Minjun Yan, Ilesanmi Adesida, Keng H. Hsu, Nicholas X. Fang

J. Vac. Sci. Technol. B 27, 2640–2643 (2009)

https://doi.org/10.1116/1.3253610

Published: December 2009

View article titled, Ultradense gold nanostructures fabricated using hydrogen silsesquioxane resist and applications for surface-enhanced Raman spectroscopy

Journal Articles

Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

Liang Wang, Dong-Hyun Kim, Ilesanmi Adesida

Appl. Phys. Lett. 95, 172107 (2009)

https://doi.org/10.1063/1.3255014

Published: October 2009

View article titled, Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

Journal Articles

Accumulation of fluorine in C F 4 plasma-treated Al Ga N ∕ Ga N heterostructure interface: An experimental investigation

Anirban Basu, Ilesanmi Adesida

J. Appl. Phys. 105, 033705 (2009)

https://doi.org/10.1063/1.3074514

Published: February 2009

View article titled, Accumulation of fluorine in C F 4 plasma-treated Al Ga N ∕ Ga N heterostructure interface: An experimental investigation

Journal Articles

Fabrication of triangular nanochannels using the collapse of hydrogen silsesquioxane resists

Sookyung Choi, Minjun Yan, Ilesanmi Adesida

Appl. Phys. Lett. 93, 163113 (2008)

https://doi.org/10.1063/1.3006322

Published: October 2008

View article titled, Fabrication of triangular nanochannels using the collapse of hydrogen silsesquioxane resists

Journal Articles

Comparative study of thermally cured and electron-beam-exposed hydrogen silsesquioxane resists

Sookyung Choi, Michael J. Word, Vipan Kumar, Ilesanmi Adesida

J. Vac. Sci. Technol. B 26, 1654–1659 (2008)

https://doi.org/10.1116/1.2960565

Published: September 2008

View article titled, Comparative study of thermally cured and electron-beam-exposed hydrogen silsesquioxane resists

Journal Articles

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

Liang Wang, Ilesanmi Adesida, Amir M. Dabiran, Andrew M. Wowchak, Peter P. Chow

Appl. Phys. Lett. 93, 032109 (2008)

https://doi.org/10.1063/1.2964204

Published: July 2008

View article titled, Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

Journal Articles

Formation mechanism of Ohmic contacts on Al Ga N ∕ Ga N heterostructure: Electrical and microstructural characterizations

Liang Wang, Fitih M. Mohammed, Ilesanmi Adesida

J. Appl. Phys. 103, 093516 (2008)

https://doi.org/10.1063/1.2903482

Published: May 2008

View article titled, Formation mechanism of Ohmic contacts on Al Ga N ∕ Ga N heterostructure: Electrical and microstructural characterizations

Journal Articles

Study of fluorine bombardment on the electrical properties of Al Ga N ∕ Ga N heterostructures

Anirban Basu, Vipan Kumar, Ilesanmi Adesida

J. Vac. Sci. Technol. B 25, 2607–2610 (2007)

https://doi.org/10.1116/1.2789444

Published: December 2007

View article titled, Study of fluorine bombardment on the electrical properties of Al Ga N ∕ Ga N heterostructures

Journal Articles

Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication

Sookyung Choi, Niu Jin, Vipan Kumar, Ilesanmi Adesida, Mark Shannon

J. Vac. Sci. Technol. B 25, 2085–2088 (2007)

https://doi.org/10.1116/1.2794315

Published: December 2007

View article titled, Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication

Journal Articles

Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication

Niu Jin, Sookyung Choi, Liang Wang, Guang Chen, DongHyun Kim, Vipan Kumar, Ilesanmi Adesida

J. Vac. Sci. Technol. B 25, 2081–2084 (2007)

https://doi.org/10.1116/1.2798734

Published: December 2007

View article titled, Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication

Journal Articles

A photon detector with very high gain at low bias and at room temperature

Omer Gokalp Memis, Alex Katsnelson, Soon-Cheol Kong, Hooman Mohseni, Minjun Yan, Shuang Zhang, Tim Hossain, Niu Jin, Ilesanmi Adesida

Appl. Phys. Lett. 91, 171112 (2007)

https://doi.org/10.1063/1.2802043

Published: October 2007

View article titled, A photon detector with very high gain at low bias and at room temperature

Journal Articles

Schottky barrier characteristics and interfacial reactions of Ti on n - In 0.52 Al 0.48 As

Liang Wang, Ilesanmi Adesida

Appl. Phys. Lett. 91, 022110 (2007)

https://doi.org/10.1063/1.2756313

Published: July 2007

View article titled, Schottky barrier characteristics and interfacial reactions of Ti on n - In 0.52 Al 0.48 As

Journal Articles

Ohmic contacts to n + - Ga N capped Al Ga N ∕ Al N ∕ Ga N high electron mobility transistors

Liang Wang, Fitih M. Mohammed, Benedict Ofuonye, Ilesanmi Adesida

Appl. Phys. Lett. 91, 012113 (2007)

https://doi.org/10.1063/1.2754371

Published: July 2007

View article titled, Ohmic contacts to n + - Ga N capped Al Ga N ∕ Al N ∕ Ga N high electron mobility transistors

Journal Articles

First-layer Si metallizations for thermally stable and smooth Ohmic contacts for Al Ga N ∕ Ga N high electron mobility transistors

Fitih M. Mohammed, Liang Wang, Ilesanmi Adesida

J. Vac. Sci. Technol. B 25, 324–333 (2007)

https://doi.org/10.1116/1.2437161

Published: February 2007

View article titled, First-layer Si metallizations for thermally stable and smooth Ohmic contacts for Al Ga N ∕ Ga N high electron mobility transistors

Journal Articles

Anatomy-performance correlation in Ti-based contact metallizations on Al Ga N ∕ Ga N heterostructures

Fitih M. Mohammed, Liang Wang, Hyung Joon Koo, Ilesanmi Adesida

J. Appl. Phys. 101, 033708 (2007)

https://doi.org/10.1063/1.2433765

Published: February 2007

View article titled, Anatomy-performance correlation in Ti-based contact metallizations on Al Ga N ∕ Ga N heterostructures

Journal Articles

Differences in the reaction kinetics and contact formation mechanisms of annealed Ti ∕ Al ∕ Mo ∕ Au Ohmic contacts on n - Ga N and Al Ga N ∕ Ga N epilayers

Liang Wang, Fitih M. Mohammed, Ilesanmi Adesida

J. Appl. Phys. 101, 013702 (2007)

https://doi.org/10.1063/1.2402791

Published: January 2007

View article titled, Differences in the reaction kinetics and contact formation mechanisms of annealed Ti ∕ Al ∕ Mo ∕ Au Ohmic contacts on n - Ga N and Al Ga N ∕ Ga N epilayers

Journal Articles

Bendable GaN high electron mobility transistors on plastic substrates

Keon Jae Lee, Matthew A. Meitl, Jong-Hyun Ahn, John A. Rogers, Ralph G. Nuzzo, Vipan Kumar, Ilesanmi Adesida

J. Appl. Phys. 100, 124507 (2006)

https://doi.org/10.1063/1.2349837

Published: December 2006

View article titled, Bendable GaN high electron mobility transistors on plastic substrates

Journal Articles

Correlating the Schottky barrier height with the interfacial reactions of Ir gates for In Al As ∕ In Ga As high electron mobility transistors

Liang Wang, Weifeng Zhao, Ilesanmi Adesida

Appl. Phys. Lett. 89, 211910 (2006)

https://doi.org/10.1063/1.2393005

Published: November 2006

View article titled, Correlating the Schottky barrier height with the interfacial reactions of Ir gates for In Al As ∕ In Ga As high electron mobility transistors

Journal Articles

Electrical and structural investigations of Ag-based Ohmic contacts for In Al As ∕ In Ga As ∕ In P high electron mobility transistors

Weifeng Zhao, Liang Wang, Ilesanmi Adesida

Appl. Phys. Lett. 89, 072105 (2006)

https://doi.org/10.1063/1.2337102

Published: August 2006

View article titled, Electrical and structural investigations of Ag-based Ohmic contacts for In Al As ∕ In Ga As ∕ In P high electron mobility transistors

NARROW

Topics

Fabrication of nanowires with high aspect ratios utilized by dry etching with SF 6 : C 4 F 8 and self-limiting thermal oxidation on Si substrate

Ultradense gold nanostructures fabricated using hydrogen silsesquioxane resist and applications for surface-enhanced Raman spectroscopy

Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

Accumulation of fluorine in C F 4 plasma-treated Al Ga N ∕ Ga N heterostructure interface: An experimental investigation

Fabrication of triangular nanochannels using the collapse of hydrogen silsesquioxane resists

Comparative study of thermally cured and electron-beam-exposed hydrogen silsesquioxane resists

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

Formation mechanism of Ohmic contacts on Al Ga N ∕ Ga N heterostructure: Electrical and microstructural characterizations

Study of fluorine bombardment on the electrical properties of Al Ga N ∕ Ga N heterostructures

Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication

Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication

A photon detector with very high gain at low bias and at room temperature

Schottky barrier characteristics and interfacial reactions of Ti on n - In 0.52 Al 0.48 As

Ohmic contacts to n + - Ga N capped Al Ga N ∕ Al N ∕ Ga N high electron mobility transistors

First-layer Si metallizations for thermally stable and smooth Ohmic contacts for Al Ga N ∕ Ga N high electron mobility transistors

Anatomy-performance correlation in Ti-based contact metallizations on Al Ga N ∕ Ga N heterostructures

Differences in the reaction kinetics and contact formation mechanisms of annealed Ti ∕ Al ∕ Mo ∕ Au Ohmic contacts on n - Ga N and Al Ga N ∕ Ga N epilayers

Bendable GaN high electron mobility transistors on plastic substrates

Correlating the Schottky barrier height with the interfacial reactions of Ir gates for In Al As ∕ In Ga As high electron mobility transistors

Electrical and structural investigations of Ag-based Ohmic contacts for In Al As ∕ In Ga As ∕ In P high electron mobility transistors

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