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I. P. Soshnikov
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Journal Articles

InGaN/GaN QDs nanorods for light emitters: Processing and properties

K. P. Kotlyar, I. A. Morozov, K. Yu. Shubina, T. N. Berezovskaya, A. S. Dragunova, N. V. Kryzhanovskaya, D. A. Kudryashov, A. I. Lihachev, A. V. Nashchekin, I. P. Soshnikov, G. E. Cirlin
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2064, 030006 (2019)
https://doi.org/10.1063/1.5087668
Published: January 2019
View article titled, InGaN/GaN QDs nanorods for light emitters: Processing and properties
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Journal Articles

Terahertz electroluminescence of surface plasmons from nanostructured InN layers

T. V. Shubina, A. V. Andrianov, A. O. Zakhar’in, V. N. Jmerik, I. P. Soshnikov, T. A. Komissarova, A. A. Usikova, P. S. Kop’ev, S. V. Ivanov, V. A. Shalygin, A. N. Sofronov, D. A. Firsov, L. E. Vorob’ev, N. A. Gippius, J. Leymarie, X. Wang, Akihiko Yoshikawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 183106 (2010)
https://doi.org/10.1063/1.3425897
Published: May 2010
View article titled, Terahertz electroluminescence of surface plasmons from nanostructured InN layers
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Journal Articles

Copper nanopattern on Si O 2 from sputter etching a Cu ∕ Si O 2 interface

M. Stepanova, S. K. Dew, I. P. Soshnikov
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 073112 (2005)
https://doi.org/10.1063/1.1864247
Published: February 2005
View article titled, Copper nanopattern on Si O 2 from sputter etching a Cu ∕ Si O 2 interface
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Journal Articles

Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys

I. L. Krestnikov, R. Heitz, N. N. Ledentsov, A. Hoffmann, A. M. Mintairov, T. H. Kosel, J. L. Merz, I. P. Soshnikov, V. M. Ustinov
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 3728–3730 (2003)
https://doi.org/10.1063/1.1623320
Published: November 2003
View article titled, Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
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Journal Articles

Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs (311)A surface

D. Litvinov, A. Rosenauer, D. Gerthsen, N. N. Ledentsov, D. Bimberg, G. A. Ljubas, V. V. Bolotov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, I. P. Soshnikov
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 1080–1082 (2002)
https://doi.org/10.1063/1.1497994
Published: August 2002
View article titled, Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs (311)A surface
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Journal Articles

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. A. Bert, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, I. P. Soshnikov, P. Werner
Journal: Applied Physics Letters
Appl. Phys. Lett. 75, 2347–2349 (1999)
https://doi.org/10.1063/1.125010
Published: October 1999
View article titled, Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
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Journal Articles

Optical properties of InAs quantum dots in a Si matrix

R. Heitz, N. N. Ledentsov, D. Bimberg, A. Yu. Egorov, M. V. Maximov, V. M. Ustinov, A. E. Zhukov, Zh. I. Alferov, G. E. Cirlin, I. P. Soshnikov, N. D. Zakharov, P. Werner, U. Gösele
Journal: Applied Physics Letters
Appl. Phys. Lett. 74, 1701–1703 (1999)
https://doi.org/10.1063/1.123660
Published: March 1999
View article titled, Optical properties of InAs quantum dots in a Si matrix
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