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Journal Articles

Special role of indium nitride in the properties of related compounds and quantum structures

I. Gorczyca, T. Suski, P. Perlin, I. Grzegory, G. Staszczak, M. Aktas
Journal: AIP Advances
AIP Advances 14, 040704 (2024)
https://doi.org/10.1063/5.0198117
Published: April 2024
View article titled, Special role of indium nitride in the properties of related compounds and quantum structures
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Journal Articles

The nature of Cr center in GaN: Magnetic anisotropy of GaN:Cr single crystals

J. B. Gosk, M. Boćkowski, I. Grzegory, J. Szczytko, A. Twardowski
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 113914 (2012)
https://doi.org/10.1063/1.4767916
Published: December 2012
View article titled, The nature of Cr center in GaN: Magnetic anisotropy of GaN:Cr single crystals
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Journal Articles

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J.-D. Ganière, N. Grandjean, B. Deveaud-Plédran
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 033517 (2012)
https://doi.org/10.1063/1.3681816
Published: February 2012
View article titled, Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN
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Journal Articles

Growth mechanism of InGaN by plasma assisted molecular beam epitaxy

H. Turski, M. Siekacz, M. Sawicka, G. Cywinski, M. Krysko, S. Grzanka, J. Smalc-Koziorowska, I. Grzegory, S. Porowski, Z. R. Wasilewski, C. Skierbiszewski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 03C136 (2011)
https://doi.org/10.1116/1.3590932
Published: May 2011
View article titled, Growth mechanism of InGaN by plasma assisted molecular beam epitaxy
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Journal Articles

Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells

R. Kudrawiec, M. Gladysiewicz, A. Dussaigne, H. Teisseyre, M. Boćkowski, I. Grzegory, T. Suski, J. Misiewicz, N. Grandjean
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 026103 (2011)
https://doi.org/10.1063/1.3533417
Published: January 2011
View article titled, Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells
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Journal Articles

Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

T. Suski, G. Staszczak, S. Grzanka, R. Czernecki, E. Litwin-Staszewska, R. Piotrzkowski, L. H. Dmowski, A. Khachapuridze, M. Kryśko, P. Perlin, I. Grzegory
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 023516 (2010)
https://doi.org/10.1063/1.3466768
Published: July 2010
View article titled, Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates
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Journal Articles

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

H. Teisseyre, A. Kamińska, G. Franssen, A. Dussaigne, N. Grandjean, I. Grzegory, B. Łucznik, T. Suski
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 063104 (2009)
https://doi.org/10.1063/1.3043888
Published: March 2009
View article titled, Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions
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Journal Articles

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

T. Suski, E. Litwin-Staszewska, R. Piotrzkowski, R. Czernecki, M. Krysko, S. Grzanka, G. Nowak, G. Franssen, L. H. Dmowski, M. Leszczynski, P. Perlin, B. Łucznik, I. Grzegory, R. Jakieła
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 172117 (2008)
https://doi.org/10.1063/1.3013352
Published: October 2008
View article titled, Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy
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Journal Articles

Nonradiative recombination at threading dislocations in n -type GaN: Studied by cathodoluminescence and defect selective etching

M. Albrecht, J. L. Weyher, B. Lucznik, I. Grzegory, S. Porowski
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 231909 (2008)
https://doi.org/10.1063/1.2928226
Published: June 2008
View article titled, Nonradiative recombination at threading dislocations in n -type GaN: Studied by cathodoluminescence and defect selective etching
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Journal Articles

Strain-compensated Al Ga N ∕ Ga N ∕ In Ga N cladding layers in homoepitaxial nitride devices

R. Czernecki, S. Krukowski, G. Targowski, P. Prystawko, M. Sarzynski, M. Krysko, G. Kamler, I. Grzegory, M. Leszczynski, S. Porowski
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 231914 (2007)
https://doi.org/10.1063/1.2823587
Published: December 2007
View article titled, Strain-compensated Al Ga N ∕ Ga N ∕ In Ga N cladding layers in homoepitaxial nitride devices
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Journal Articles

Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates

M. Kryśko, G. Franssen, T. Suski, M. Albrecht, B. Łucznik, I. Grzegory, S. Krukowski, R. Czernecki, S. Grzanka, I. Makarowa, M. Leszczyński, P. Perlin
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 211904 (2007)
https://doi.org/10.1063/1.2815921
Published: November 2007
View article titled, Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates
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Journal Articles

Mode dynamics of high power ( InAl ) GaN based laser diodes grown on bulk GaN substrate

T. Swietlik, G. Franssen, R. Czernecki, M. Leszczynski, C. Skierbiszewski, I. Grzegory, T. Suski, P. Perlin, C. Lauterbach, U. T. Schwarz
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 083109 (2007)
https://doi.org/10.1063/1.2718881
Published: April 2007
View article titled, Mode dynamics of high power ( InAl ) GaN based laser diodes grown on bulk GaN substrate
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Journal Articles

Diluted Magnetic III‐V Semiconductors With Mn For Possible Spintronic Applications

A. Wolos, M. Zajac, J. Gosk, K. Korona, D. Wasik, A. Wysmolek, M. Palczewska, I. Grzegory, M. Bockowski, M. Piersa, G. Strzelecka, A. Hruban, M. Kaminska, A. Twardowski
Journal: AIP Conference Proceedings
AIP Conf. Proc. 893, 1201–1202 (2007)
https://doi.org/10.1063/1.2730329
Published: April 2007
View article titled, Diluted Magnetic III‐V Semiconductors With Mn For Possible Spintronic Applications
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Journal Articles

Continuous‐Wave Operation of Blue InGaN Laser Diodes Made by Plasma‐Assisted MBE

C. Skierbiszewski, P. Perlin, I. Grzegory, S. Porowski
Journal: AIP Conference Proceedings
AIP Conf. Proc. 893, 1409–1410 (2007)
https://doi.org/10.1063/1.2730432
Published: April 2007
View article titled, Continuous‐Wave Operation of Blue InGaN Laser Diodes Made by Plasma‐Assisted MBE
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Journal Articles

Tunneling in dislocation‐free GaN/AlGaN double‐barrier diodes grown on bulk GaN

S. Golka, G. Pozzovivo, W. Schrenk, G. Strasser, C. Skierbiszewski, M. Siekacz, I. Grzegory, S. Porowski
Journal: AIP Conference Proceedings
AIP Conf. Proc. 893, 303–304 (2007)
https://doi.org/10.1063/1.2729888
Published: April 2007
View article titled, Tunneling in dislocation‐free GaN/AlGaN double‐barrier diodes grown on bulk GaN
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Journal Articles

MnAs dots on GaN(0001̄) surface — growth process and electronic structure

B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski, K. Kopalko, E. Łusakowska, M. Sawicki, J. Sadowski, M. Adell, I. Grzegory, S. Porowski
Journal: AIP Conference Proceedings
AIP Conf. Proc. 893, 113–114 (2007)
https://doi.org/10.1063/1.2729796
Published: April 2007
View article titled, MnAs dots on GaN(0001̄) surface — growth process and electronic structure
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Journal Articles

Optically pumped Ga N ∕ Al Ga N separate-confinement heterostructure laser grown along the ( 11 2 ¯ 0 ) nonpolar direction

H. Teisseyre, C. Skierbiszewski, A. Khachapuridze, A. Feduniewicz-Żmuda, M. Siekacz, B. £ucznik, G. Kamler, M. Kryśko, T. Suski, P. Perlin, I. Grzegory, S. Porowski
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 081104 (2007)
https://doi.org/10.1063/1.2695825
Published: February 2007
View article titled, Optically pumped Ga N ∕ Al Ga N separate-confinement heterostructure laser grown along the ( 11 2 ¯ 0 ) nonpolar direction
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Journal Articles

Carrier recombination and diffusion in GaN revealed by transient luminescence under one-photon and two-photon excitations

S. Juršėnas, S. Miasojedovas, A. Žukauskas, B. Lucznik, I. Grzegory, T. Suski
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 172119 (2006)
https://doi.org/10.1063/1.2370905
Published: October 2006
View article titled, Carrier recombination and diffusion in GaN revealed by transient luminescence under one-photon and two-photon excitations
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Journal Articles

60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

C. Skierbiszewski, P. Wiśniewski, M. Siekacz, P. Perlin, A. Feduniewicz-Zmuda, G. Nowak, I. Grzegory, M. Leszczyński, S. Porowski
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 221108 (2006)
https://doi.org/10.1063/1.2208929
Published: May 2006
View article titled, 60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy
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Journal Articles

Growth of thin Al In N ∕ Ga In N quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

G. Cywiński, C. Skierbiszewski, A. Fedunieiwcz-Żmuda, M. Siekacz, L. Nevou, L. Doyennette, M. Tchernycheva, F. H. Julien, P. Prystawko, M. Kryśko, S. Grzanka, I. Grzegory, A. Presz, J. Z. Domagała, J. Smalc, M. Albrecht, T. Remmele, S. Porowski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1505–1509 (2006)
https://doi.org/10.1116/1.2200382
Published: May 2006
View article titled, Growth of thin Al In N ∕ Ga In N quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths
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