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Journal Articles

Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency

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R. Dahal, K. C. Huang, J. Clinton, N. LiCausi, J.-Q. Lu, Y. Danon, I. Bhat
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 243507 (2012)
https://doi.org/10.1063/1.4729558
Published: June 2012
View articletitled, Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency
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Journal Articles

Effect of C ∕ Si ratio on deep levels in epitaxial 4H–SiC

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C. W. Litton, D. Johnstone, S. Akarca-Biyikli, K. S. Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, E. F. Schubert
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 121914 (2006)
https://doi.org/10.1063/1.2161388
Published: March 2006
View articletitled, Effect of C ∕ Si ratio on deep levels in epitaxial 4H–SiC
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Journal Articles

Growth and characterization of SiC epitaxial layers on Si- and C-face 4 H SiC substrates by chemical-vapor deposition

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Kodigala Subba Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, E. F. Schubert, D. Johnstone, S. Akarca-Biyikli
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 106108 (2005)
https://doi.org/10.1063/1.2132520
Published: November 2005
View articletitled, Growth and characterization of SiC epitaxial layers on Si- and C-face 4 H SiC substrates by chemical-vapor deposition
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Journal Articles

Optical Spectroscopy of Polytypic Quantum Wells in SiC

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G. Samson, L. Chen, B. J. Skromme, R. Wang, C. Li, I. Bhat
Journal: AIP Conference Proceedings
AIP Conf. Proc. 772, 989–990 (2005)
https://doi.org/10.1063/1.1994442
Published: June 2005
View articletitled, Optical Spectroscopy of Polytypic Quantum Wells in SiC
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Journal Articles

Imaging of the Electric Fields and Charge Associated with Modulation‐Doped 4H/3C/4H Polytypic Quantum Wells in SiC

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M. K. Mikhov, G. Samson, B. J. Skromme, R. Wang, C. Li, I. Bhat
Journal: AIP Conference Proceedings
AIP Conf. Proc. 772, 937–938 (2005)
https://doi.org/10.1063/1.1994416
Published: June 2005
View articletitled, Imaging of the Electric Fields and Charge Associated with Modulation‐Doped 4H/3C/4H Polytypic Quantum Wells in SiC
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Journal Articles

Epitaxial growth of AlN and Al 0.5 Ga 0.5 N layers on aluminum nitride substrates

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L. J. Schowalter, Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi, G. A. Slack
Journal: Applied Physics Letters
Appl. Phys. Lett. 76, 985–987 (2000)
https://doi.org/10.1063/1.125914
Published: February 2000
View articletitled, Epitaxial growth of AlN and Al 0.5 Ga 0.5 N layers on aluminum nitride substrates
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Journal Articles

Role of relative tilt on the structural properties of GaInSb epitaxial layers grown on (001) GaSb substrates

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H. Ehsani, I. Bhat, R. J. Gutmann, G. Charache, M. Freeman
Journal: Journal of Applied Physics
J. Appl. Phys. 86, 835–840 (1999)
https://doi.org/10.1063/1.370811
Published: July 1999
View articletitled, Role of relative tilt on the structural properties of GaInSb epitaxial layers grown on (001) GaSb substrates
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Journal Articles

Modeling of InGaSb thermophotovoltaic cells and materials

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M. Zierak, J. M. Borrego, I. Bhat, R. J. Gutmann, G. Charache
Journal: AIP Conference Proceedings
AIP Conf. Proc. 401, 55–64 (1997)
https://doi.org/10.1063/1.53288
Published: March 1997
View articletitled, Modeling of InGaSb thermophotovoltaic cells and materials
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Journal Articles

Growth and characterization of In 0.2 Ga 0.8 Sb device structures using metalorganic vapor phase epitaxy

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H. Ehsani, I. Bhat, C. Hitchcock, R. Gutmann, G. Charache, M. Freeman
Journal: AIP Conference Proceedings
AIP Conf. Proc. 401, 65–74 (1997)
https://doi.org/10.1063/1.53299
Published: March 1997
View articletitled, Growth and characterization of In 0.2 Ga 0.8 Sb device structures using metalorganic vapor phase epitaxy
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Journal Articles

RF/Microwave non-destructive measurements of electrical properties of semiconductor wafers for thermophotovoltaic applications

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S. Saroop, J. M. Borrego, R. J. Gutmann, H. Ehsani, I. Bhat, S. Dakshina Murthy, A. Ostrogorsky, P. Dutta, M. Freeman, G. Charache
Journal: AIP Conference Proceedings
AIP Conf. Proc. 401, 139–155 (1997)
https://doi.org/10.1063/1.53278
Published: March 1997
View articletitled, RF/Microwave non-destructive measurements of electrical properties of semiconductor wafers for thermophotovoltaic applications
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Journal Articles

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization

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C. Hitchcock, R. Gutmann, J. Borrego, H. Ehsani, I. Bhat, M. Freeman, G. Charache
Journal: AIP Conference Proceedings
AIP Conf. Proc. 401, 89–103 (1997)
https://doi.org/10.1063/1.53290
Published: March 1997
View articletitled, GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization
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Journal Articles

Optical properties of degenerately doped silicon films for applications in thermophotovoltaic systems

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H. Ehsani, I. Bhat, J. Borrego, R. Gutmann, E. Brown, R. Dziendziel, M. Freeman, N. Choudhury
Journal: Journal of Applied Physics
J. Appl. Phys. 81, 432–439 (1997)
https://doi.org/10.1063/1.364076
Published: January 1997
View articletitled, Optical properties of degenerately doped silicon films for applications in thermophotovoltaic systems
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Journal Articles

p‐type GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source

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H. Ehsani, I. Bhat, R. Gutmann, G. Charache
Journal: Applied Physics Letters
Appl. Phys. Lett. 69, 3863–3865 (1996)
https://doi.org/10.1063/1.117130
Published: December 1996
View articletitled, p‐type GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source
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Journal Articles

Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy

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H. Ehsani, I. Bhat, C. Hitchcock, J. Borrego, R. Gutmann
Journal: AIP Conference Proceedings
AIP Conf. Proc. 358, 423–433 (1996)
https://doi.org/10.1063/1.49703
Published: February 1996
View articletitled, Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy
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Journal Articles

Characteristics of indium oxide plasma filters deposited by atmospheric pressure CVD

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S. Dakshina Murthy, E. Langlois, I. Bhat, R. Gutmann, E. Brown, R. Dzeindziel, M. Freeman, N. Choudhury
Journal: AIP Conference Proceedings
AIP Conf. Proc. 358, 290–311 (1996)
https://doi.org/10.1063/1.49694
Published: February 1996
View articletitled, Characteristics of indium oxide plasma filters deposited by atmospheric pressure CVD
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Journal Articles

Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems

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H. Ehsani, I. Bhat, J. Borrego, R. Gutmann, E. Brown, R. Dzeindziel, M. Freeman, N. Choudhury
Journal: AIP Conference Proceedings
AIP Conf. Proc. 358, 312–328 (1996)
https://doi.org/10.1063/1.49696
Published: February 1996
View articletitled, Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems
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Journal Articles

OMVPE growth and characterization of InGaAs for TPV cells

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H. Ehsani, I. Bhat, D. Marcy, G. Nichols, J. Borrego, J. Parrington, R. Gutmann
Journal: AIP Conference Proceedings
AIP Conf. Proc. 321, 188–193 (1995)
https://doi.org/10.1063/1.47022
Published: January 1995
View articletitled, OMVPE growth and characterization of InGaAs for TPV cells
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Journal Articles

Characterization of InGaAs TPV cells

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M. Zierak, J. Borrego, I. Bhat, H. Ehsani, D. Marcy, R. Gutmann, J. Parrington, G. Charache, G. Nichols
Journal: AIP Conference Proceedings
AIP Conf. Proc. 321, 473–483 (1995)
https://doi.org/10.1063/1.47055
Published: January 1995
View articletitled, Characterization of InGaAs TPV cells
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Journal Articles

Reduced metal–insulator semiconductor tunneling in metalorganic chemical vapor deposition HgCdTe(111)Te films

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R. Koestner, V. Lopes, R. Korenstein, S. Oguz, V. Kreismanis, H. Ehsani, I. Bhat
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 10, 1643–1650 (1992)
https://doi.org/10.1116/1.586262
Published: July 1992
View articletitled, Reduced metal–insulator semiconductor tunneling in metalorganic chemical vapor deposition HgCdTe(111)Te films
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Journal Articles

Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition

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J. Petruzzello, D. Olego, S. K. Ghandhi, N. R. Taskar, I. Bhat
Journal: Applied Physics Letters
Appl. Phys. Lett. 50, 1423–1425 (1987)
https://doi.org/10.1063/1.97842
Published: May 1987
View articletitled, Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition
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