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Journal Articles

Controllable multilevel quantized conduction states in vertical CBRAM using Cu-nanodot ion source

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Sunhyeong Lee, Chuljun Lee, Ohhyuk Kwon, Seongjae Heo, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 182105 (2024)
https://doi.org/10.1063/5.0221485
Published: October 2024
View article titled, Controllable multilevel quantized conduction states in vertical CBRAM using Cu-nanodot ion source
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Journal Articles

Volatile threshold switching devices for hardware security primitives: Exploiting intrinsic variability as an entropy source

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Wooseok Choi, Ohhyuk Kwon, Jangseop Lee, Seungyeol Oh, Seongjae Heo, Sanghyun Ban, Yoori Seo, Dongmin Kim, Hyunsang Hwang
Journal: Applied Physics Reviews
Appl. Phys. Rev. 11, 021323 (2024)
https://doi.org/10.1063/5.0183292
Published: May 2024
View article titled, Volatile threshold switching devices for hardware security primitives: Exploiting intrinsic variability as an entropy source
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Journal Articles

Publisher's Note: “Improving the selector characteristics of ovonic threshold switch via UV treatment process” [Appl. Phys. Lett. 123 , 242103 (2023)]

Yoori Seo, Jangseop Lee, Sanghyun Ban, Dongmin Kim, Geonhui Han, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 019902 (2024)
https://doi.org/10.1063/5.0194517
Published: January 2024
View article titled, Publisher's Note: “Improving the selector characteristics of ovonic threshold switch via UV treatment process” [Appl. Phys. Lett. 123 , 242103 (2023)]
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Journal Articles

Improving the selector characteristics of ovonic threshold switch via UV treatment process

Yoori Seo, Jangseop Lee, Sanghyun Ban, Dongmin Kim, Geonhui Han, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 242103 (2023)
https://doi.org/10.1063/5.0174074
Published: December 2023
View article titled, Improving the selector characteristics of ovonic threshold switch via UV treatment process
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Journal Articles

Composition optimization of HfxZr1-xO2 thin films to achieve the morphotrophic phase boundary for high-k dielectrics

Editor’s Pick
Seungyeol Oh, Hojung Jang, Hyunsang Hwang
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 154102 (2023)
https://doi.org/10.1063/5.0127171
Published: April 2023
View article titled, Composition optimization of Hf<sub>x</sub>Zr<sub>1-x</sub>O<sub>2</sub> thin films to achieve the morphotrophic phase boundary for high-<em>k</em> dielectrics
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Includes: Supplementary data
Journal Articles

NbO2 selector device with Ge2Sb2Te5 thermal barrier for low off current (300 nA) and low power operation

Ohhyuk Kwon, Jangseop Lee, Kyumin Lee, Wooseok Choi, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 113502 (2023)
https://doi.org/10.1063/5.0142498
Published: March 2023
View article titled, NbO<sub>2</sub> selector device with Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thermal barrier for low off current (300 nA) and low power operation
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Journal Articles

Vacuum gap atomic switch with improved controllability of quantized conduction states and low transition energy

Sunhyeong Lee, Seungwoo Lee, Hyunsang Hwang
Journal: AIP Advances
AIP Advances 13, 025053 (2023)
https://doi.org/10.1063/5.0138238
Published: February 2023
View article titled, Vacuum gap atomic switch with improved controllability of quantized conduction states and low transition energy
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Journal Articles

Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors

Kyumin Lee, Laeyong Jung, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 072104 (2022)
https://doi.org/10.1063/5.0098444
Published: August 2022
View article titled, Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors
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Journal Articles

Prospect and challenges of analog switching for neuromorphic hardware

Writam Banerjee, Revannath Dnyandeo Nikam, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 060501 (2022)
https://doi.org/10.1063/5.0073528
Published: February 2022
View article titled, Prospect and challenges of analog switching for neuromorphic hardware
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Journal Articles

Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor

Chuljun Lee, Wooseok Choi, Myunghoon Kwak, Seyoung Kim, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 103503 (2021)
https://doi.org/10.1063/5.0059804
Published: September 2021
View article titled, Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor
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Journal Articles

Hybrid memory characteristics of NbOx threshold switching devices

Sangmin Lee, Hyunsang Hwang, Jiyong Woo
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 092102 (2021)
https://doi.org/10.1063/5.0061435
Published: August 2021
View article titled, Hybrid memory characteristics of NbO<sub>x</sub> threshold switching devices
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Journal Articles

Understanding of forming and switching mechanism using trap distribution model for ovonic threshold switch device

Editor’s Pick
Sangmin Lee, Jangseop Lee, Myonghoon Kwak, Oleksandr Mosendz, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 212103 (2021)
https://doi.org/10.1063/5.0049568
Published: May 2021
View article titled, Understanding of forming and switching mechanism using trap distribution model for ovonic threshold switch device
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Journal Articles

Enhancement of ovonic threshold switching characteristics using nanometer-scale virtual electrode formed within ultrathin hafnium dioxide interlayer

Jangseop Lee, Sangmin Lee, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 022103 (2021)
https://doi.org/10.1063/5.0034847
Published: January 2021
View article titled, Enhancement of ovonic threshold switching characteristics using nanometer-scale virtual electrode formed within ultrathin hafnium dioxide interlayer
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Journal Articles

Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film

Seungyeol Oh, Hyungwoo Kim, Alireza Kashir, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 252906 (2020)
https://doi.org/10.1063/5.0030856
Published: December 2020
View article titled, Effect of dead layers on the ferroelectric property of ultrathin HfZrO<sub>x</sub> film
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Includes: Supplementary data
Journal Articles

Evolution of 0.7 conductance anomaly in electric field driven ferromagnetic CuO junction based resistive random access memory devices

Writam Banerjee, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 053502 (2020)
https://doi.org/10.1063/1.5136290
Published: February 2020
View article titled, Evolution of 0.7 conductance anomaly in electric field driven ferromagnetic CuO junction based resistive random access memory devices
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Journal Articles

Engineering of defects in resistive random access memory devices

Editor’s Pick
Writam Banerjee, Qi Liu, Hyunsang Hwang
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 051101 (2020)
https://doi.org/10.1063/1.5136264
Published: February 2020
View article titled, Engineering of defects in resistive random access memory devices
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Journal Articles

Field-induced nucleation switching in binary ovonic threshold switches

Sangmin Lee, Jongmyung Yoo, Jaehyuk Park, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 233503 (2019)
https://doi.org/10.1063/1.5126913
Published: December 2019
View article titled, Field-induced nucleation switching in binary ovonic threshold switches
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Journal Articles

An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application

Solomon Amsalu Chekol, Jeonghwan Song, Jongmyung Yoo, Seokjae Lim, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 102106 (2019)
https://doi.org/10.1063/1.5087273
Published: March 2019
View article titled, An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application
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Journal Articles

Perspective: A review on memristive hardware for neuromorphic computation

Changhyuck Sung, Hyunsang Hwang, In Kyeong Yoo
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 151903 (2018)
https://doi.org/10.1063/1.5037835
Published: October 2018
View article titled, Perspective: A review on memristive hardware for neuromorphic computation
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Journal Articles

CMOS compatible low-power volatile atomic switch for steep-slope FET devices

Seokjae Lim, Jongmyung Yoo, Jeonghwan Song, Jiyong Woo, Jaehyuk Park, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 033501 (2018)
https://doi.org/10.1063/1.5039898
Published: July 2018
View article titled, CMOS compatible low-power volatile atomic switch for steep-slope FET devices
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