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Hyuck-In Kwon
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Journal Articles

Low temperature carrier transport mechanism in high-mobility zinc oxynitride thin-film transistors

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Hee-Joong Kim, Sae-Young Hong, Dae-Hwan Kim, Hwan-Seok Jeong, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 030602 (2017)
https://doi.org/10.1116/1.4983528
Published: May 2017
View articletitled, Low temperature carrier transport mechanism in high-mobility zinc oxynitride thin-film transistors
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Journal Articles

Effects of various bias and temperature stresses on low-frequency noise properties of amorphous InGaZnO thin-film transistors

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Hee-Joong Kim, Chan-Yong Jeong, Sang-Dae Bae, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 010601 (2017)
https://doi.org/10.1116/1.4972524
Published: December 2016
View articletitled, Effects of various bias and temperature stresses on low-frequency noise properties of amorphous InGaZnO thin-film transistors
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Journal Articles

Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors

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Chan-Yong Jeong, Hee-Joong Kim, Jong In Kim, Jong-Ho Lee, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 060601 (2016)
https://doi.org/10.1116/1.4964608
Published: October 2016
View articletitled, Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors
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Journal Articles

Temperature-dependent electrical instability of p-type SnO thin-film transistors

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Jeong-Hwan Lee, Yong-Jin Choi, Chan-Yong Jeong, Chang-Woo Lee, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 041210 (2016)
https://doi.org/10.1116/1.4949558
Published: May 2016
View articletitled, Temperature-dependent electrical instability of p-type SnO thin-film transistors
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Journal Articles

Enhancement mode p-channel SnO thin-film transistors with dual-gate structures

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Yong-Jin Choi, Young-Joon Han, Chan-Yong Jeong, Sang-Hun Song, Geun Woo Baek, Sung Hun Jin, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 041203 (2015)
https://doi.org/10.1116/1.4923236
Published: June 2015
View articletitled, Enhancement mode p-channel SnO thin-film transistors with dual-gate structures
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Journal Articles

Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors

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Chan-Yong Jeong, Daeun Lee, Sang-Hun Song, Jong In Kim, Jong-Ho Lee, Jae-Gwang Um, Jin Jang, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 030603 (2015)
https://doi.org/10.1116/1.4919234
Published: April 2015
View articletitled, Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors
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Journal Articles

Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses

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Daeun Lee, Chan-Yong Jeong, Sang-Hun Song, Jin Xiao-Shi, Jong In Kim, Jong-Ho Lee, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 011202 (2015)
https://doi.org/10.1116/1.4903527
Published: December 2014
View articletitled, Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses
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Journal Articles

Thermoreflectance microscopy analysis on self-heating effect of short-channel amorphous In-Ga-Zn-O thin film transistors

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Jong In Kim, Ki Soo Chang, Dong Uk Kim, In-Tak Cho, Chan-Yong Jeong, Daeun Lee, Hyuck-In Kwon, Sung Hun Jin, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 043501 (2014)
https://doi.org/10.1063/1.4891644
Published: July 2014
View articletitled, Thermoreflectance microscopy analysis on self-heating effect of short-channel amorphous In-Ga-Zn-O thin film transistors
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Journal Articles

Border trap characterization in amorphous indium-gallium-zinc oxide thin-film transistors with SiOX and SiNX gate dielectrics

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Chan-Yong Jeong, Daeun Lee, Sang-Hun Song, In-Tak Cho, Jong-Ho Lee, Eou-Sik Cho, Hyuck-In Kwon
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 142104 (2013)
https://doi.org/10.1063/1.4824118
Published: October 2013
View articletitled, Border trap characterization in amorphous indium-gallium-zinc oxide thin-film transistors with SiOX and SiNX gate dielectrics
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Journal Articles

Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors

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Chan-Yong Jeong, Joonsung Sohn, Sang-Hun Song, In-Tak Cho, Jong-Ho Lee, Eou-Sik Cho, Hyuck-In Kwon
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 082103 (2013)
https://doi.org/10.1063/1.4794061
Published: February 2013
View articletitled, Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors
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Journal Articles

Active layer thickness effects on the structural and electrical properties of p-type Cu2O thin-film transistors

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Dong-Woo Nam, In-Tak Cho, Jong-Ho Lee, Eou-Sik Cho, Joonsung Sohn, Sang-Hun Song, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 060605 (2012)
https://doi.org/10.1116/1.4764110
Published: October 2012
View articletitled, Active layer thickness effects on the structural and electrical properties of p-type Cu2O thin-film transistors
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Journal Articles

Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

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Jung-Kyu Lee, Sunghun Jung, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, Il Hwan Cho, Hyuck-In Kwon, Chan Hyeong Park, Byung-Gook Park, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 103506 (2012)
https://doi.org/10.1063/1.4751248
Published: September 2012
View articletitled, Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices
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Journal Articles

Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition

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Jung-Kyu Lee, Hyun-Jong Chung, Jinseong Heo, Sunae Seo, Il Hwan Cho, Hyuck-In Kwon, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 193504 (2011)
https://doi.org/10.1063/1.3589120
Published: May 2011
View articletitled, Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition
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Journal Articles

Extraction of trap location and energy from random telegraph noise in amorphous TiO x resistance random access memories

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Jung-Kyu Lee, Ju-Wan Lee, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, Il-whan Cho, Hyuck-In Kwon, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 143502 (2011)
https://doi.org/10.1063/1.3575572
Published: April 2011
View articletitled, Extraction of trap location and energy from random telegraph noise in amorphous TiO x resistance random access memories
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Journal Articles

Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation

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Jae Chul Park, Sang Wook Kim, Chang Jung Kim, Sungchul Kim, Dae Hwan Kim, In-Tak Cho, Hyuck-In Kwon
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 122104 (2010)
https://doi.org/10.1063/1.3491553
Published: September 2010
View articletitled, Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation
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Journal Articles

Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al 2 O 3 and Al 2 O 3 / SiN x gate dielectrics

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Jeong-Min Lee, In-Tak Cho, Jong-Ho Lee, Woo-Seok Cheong, Chi-Sun Hwang, Hyuck-In Kwon
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 222112 (2009)
https://doi.org/10.1063/1.3151865
Published: June 2009
View articletitled, Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al 2 O 3 and Al 2 O 3 / SiN x gate dielectrics
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Journal Articles

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

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Jeong-Min Lee, In-Tak Cho, Jong-Ho Lee, Hyuck-In Kwon
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 093504 (2008)
https://doi.org/10.1063/1.2977865
Published: September 2008
View articletitled, Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
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