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Journal Articles

Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

Satyaki Ganguly, Aniruddha Konar, Zongyang Hu, Huili Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 253519 (2012)
https://doi.org/10.1063/1.4773244
Published: December 2012
View article titled, Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
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Journal Articles

Response to “Comment on ‘Zener tunneling semiconducting nanotubes and graphene nanoribbon p-n junctions’” [Appl. Phys. Lett. 101, 256103 (2012)]

Debdeep Jena, Tian Fang, Qin Zhang, Huili Xing
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 256104 (2012)
https://doi.org/10.1063/1.4766741
Published: December 2012
View article titled, Response to “Comment on ‘Zener tunneling semiconducting nanotubes and graphene nanoribbon p-n junctions’” [Appl. Phys. Lett. 101, 256103 (2012)]
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Journal Articles

Erratum: “Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions” [Appl. Phys. Lett. 99 , 193504 (2011)]

Satyaki Ganguly, Jai Verma, Guowang Li, Tom Zimmermann, Huili Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 249903 (2011)
https://doi.org/10.1063/1.3671324
Published: December 2011
View article titled, Erratum: “Presence and origin of interface charges at atomic-layer deposited Al<sub>2</sub>O<sub>3</sub>/III-nitride heterojunctions” [Appl. Phys. Lett. 99 , 193504 (2011)]
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Journal Articles

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

Satyaki Ganguly, Jai Verma, Guowang Li, Tom Zimmermann, Huili Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 193504 (2011)
https://doi.org/10.1063/1.3658450
Published: November 2011
View article titled, Presence and origin of interface charges at atomic-layer deposited Al<sub>2</sub>O<sub>3</sub>/III-nitride heterojunctions
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Journal Articles

Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors

Yu Cao, Huili Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 222116 (2010)
https://doi.org/10.1063/1.3521258
Published: December 2010
View article titled, Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors
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Journal Articles

Polarization-engineered removal of buffer leakage for GaN transistors

Yu Cao, Tom Zimmermann, Huili Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 042102 (2010)
https://doi.org/10.1063/1.3293454
Published: January 2010
View article titled, Polarization-engineered removal of buffer leakage for GaN transistors
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Journal Articles

Zener tunneling in semiconducting nanotube and graphene nanoribbon p − n junctions

Debdeep Jena, Tian Fang, Qin Zhang, Huili Xing
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 112106 (2008)
https://doi.org/10.1063/1.2983744
Published: September 2008
View article titled, Zener tunneling in semiconducting nanotube and graphene nanoribbon p − n junctions
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Journal Articles

Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary Al N ∕ Ga N heterojunctions

Yu Cao, Kejia Wang, Alexei Orlov, Huili Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 152112 (2008)
https://doi.org/10.1063/1.2911748
Published: April 2008
View article titled, Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary Al N ∕ Ga N heterojunctions
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Journal Articles

Carrier statistics and quantum capacitance of graphene sheets and ribbons

Tian Fang, Aniruddha Konar, Huili Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 092109 (2007)
https://doi.org/10.1063/1.2776887
Published: August 2007
View article titled, Carrier statistics and quantum capacitance of graphene sheets and ribbons
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Journal Articles

Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN

John Simon, Albert (Kejia) Wang, Huili Xing, Siddharth Rajan, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 042109 (2006)
https://doi.org/10.1063/1.2168253
Published: January 2006
View article titled, Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN
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Journal Articles

AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

Siddharth Rajan, Huili Xing, Steve DenBaars, Umesh K. Mishra, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 1591–1593 (2004)
https://doi.org/10.1063/1.1652254
Published: March 2004
View article titled, AlGaN/GaN polarization-doped field-effect transistor for microwave power applications
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Journal Articles

n- AlGaAs /p- GaAs /n -GaN heterojunction bipolar transistor wafer-fused at 550–750 °C

Sarah Estrada, Andrew Huntington, Andreas Stonas, Huili Xing, Umesh Mishra, Steven DenBaars, Larry Coldren, Evelyn Hu
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 560–562 (2003)
https://doi.org/10.1063/1.1592887
Published: July 2003
View article titled, n- AlGaAs /p- GaAs /n -GaN heterojunction bipolar transistor wafer-fused at 550–750 °C
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Journal Articles

Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor

Sarah Estrada, Huili Xing, Andreas Stonas, Andrew Huntington, Umesh Mishra, Steven DenBaars, Larry Coldren, Evelyn Hu
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 820–822 (2003)
https://doi.org/10.1063/1.1541946
Published: February 2003
View article titled, Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor
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Journal Articles

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

Debdeep Jena, Sten Heikman, Daniel Green, Dario Buttari, Robert Coffie, Huili Xing, Stacia Keller, Steve DenBaars, James S. Speck, Umesh K. Mishra, Ioulia Smorchkova
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 4395–4397 (2002)
https://doi.org/10.1063/1.1526161
Published: December 2002
View article titled, Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys
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Journal Articles

Ultrashort hole capture time in Mg-doped GaN thin films

Kung-Hsuan Lin, Gia-Wei Chern, Shi-Wei Chu, Chi-Kuang Sun, Huili Xing, Yulia Smorchkova, Stacia Keller, Umesh Mishra, Steven P. DenBaars
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 3975–3977 (2002)
https://doi.org/10.1063/1.1522827
Published: November 2002
View article titled, Ultrashort hole capture time in Mg-doped GaN thin films
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Journal Articles

Heavy doping effects in Mg-doped GaN

Peter Kozodoy, Huili Xing, Steven P. DenBaars, Umesh K. Mishra, A. Saxler, R. Perrin, S. Elhamri, W. C. Mitchel
Journal: Journal of Applied Physics
J. Appl. Phys. 87, 1832–1835 (2000)
https://doi.org/10.1063/1.372098
Published: February 2000
View article titled, Heavy doping effects in Mg-doped GaN
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Journal Articles

Polarization-enhanced Mg doping of AlGaN/GaN superlattices

Peter Kozodoy, Yulia P. Smorchkova, Monica Hansen, Huili Xing, Steven P. DenBaars, Umesh K. Mishra, A. W. Saxler, R. Perrin, W. C. Mitchel
Journal: Applied Physics Letters
Appl. Phys. Lett. 75, 2444–2446 (1999)
https://doi.org/10.1063/1.125042
Published: October 1999
View article titled, Polarization-enhanced Mg doping of AlGaN/GaN superlattices
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