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Journal Articles

Two-carrier model-fitting of Hall effect in semiconductors with dual-band occupation: A case study in GaN two-dimensional hole gas

Joseph E. Dill, Chuan F. C. Chang, Debdeep Jena, Huili Grace Xing

J. Appl. Phys. 137, 025702 (2025)

https://doi.org/10.1063/5.0248998

Published: January 2025

View article titled, Two-carrier model-fitting of Hall effect in semiconductors with dual-band occupation: A case study in GaN two-dimensional hole gas

Journal Articles

In situ etching of β-Ga₂O₃ using tert-butyl chloride in an MOCVD system

Cameron A. Gorsak, Henry J. Bowman, Katie R. Gann, Joshua T. Buontempo, Kathleen T. Smith, Pushpanshu Tripathi, Jacob Steele, Debdeep Jena, Darrell G. Schlom, Huili Grace Xing, Michael O. Thompson, Hari P. Nair

Appl. Phys. Lett. 125, 242103 (2024)

https://doi.org/10.1063/5.0239152

Published: December 2024

View article titled, In situ etching of β-Ga2O3 using tert-butyl chloride in an MOCVD system

Journal Articles

Chasing Schottky–Mott: Metal-first non-alloyed contacts to β-Ga₂O₃ for interface quality and minimal surface modification

Kathleen T. Smith, Cameron A. Gorsak, Joshua T. Buontempo, Bennett J. Cromer, Takumi Ikenoue, Hemant Gulupalli, Michael O. Thompson, Debdeep Jena, Hari P. Nair, Huili Grace Xing

J. Appl. Phys. 136, 215302 (2024)

https://doi.org/10.1063/5.0238720

Published: December 2024

View article titled, Chasing Schottky–Mott: Metal-first non-alloyed contacts to β-Ga2O3 for interface quality and minimal surface modification

Journal Articles

Polarization-induced two-dimensional hole gases in N-polar AlGaN/GaN heterostructures

Changkai Yu, Zexuan Zhang, Debdeep Jena, Huili Grace Xing, YongJin Cho

Appl. Phys. Lett. 125, 232101 (2024)

https://doi.org/10.1063/5.0241444

Published: December 2024

View article titled, Polarization-induced two-dimensional hole gases in N-polar AlGaN/GaN heterostructures

Journal Articles

High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping

Yu-Hsin Chen, Jimy Encomendero, Chandrashekhar Savant, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena

Appl. Phys. Lett. 125, 142110 (2024)

https://doi.org/10.1063/5.0228253

Published: October 2024

View article titled, High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping

Journal Articles

Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Joachim Würfl, Tomás Palacios, Huili Grace Xing, Yue Hao, Mathias Schubert

Appl. Phys. Lett. 125, 070401 (2024)

https://doi.org/10.1063/5.0221783

Published: August 2024

View article titled, Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Journal Articles

Ferroelectric AlBN films by molecular beam epitaxy

Chandrashekhar Savant, Ved Gund, Kazuki Nomoto, Takuya Maeda, Shubham Jadhav, Joongwon Lee, Madhav Ramesh, Eungkyun Kim, Thai-Son Nguyen, Yu-Hsin Chen, Joseph Casamento, Farhan Rana, Amit Lal, Huili Grace Xing, Debdeep Jena

Appl. Phys. Lett. 125, 072902 (2024)

https://doi.org/10.1063/5.0181217

Published: August 2024

View article titled, Ferroelectric AlBN films by molecular beam epitaxy

Journal Articles

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Yu-Hsin Chen, Jimy Encomendero, Chandrashekhar Savant, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena

Appl. Phys. Lett. 124, 152111 (2024)

https://doi.org/10.1063/5.0190822

Published: April 2024

View article titled, Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Includes: Supplementary data

Journal Articles

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Shivali Agrawal, Len van Deurzen, Jimy Encomendero, Joseph E. Dill, Hsin Wei (Sheena) Huang, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena

Appl. Phys. Lett. 124, 102109 (2024)

https://doi.org/10.1063/5.0189419

Published: March 2024

View article titled, Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Journal Articles

Erratum: “Growth of β-Ga₂O₃ and ε/κ-Ga₂O₃ on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]

Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt

APL Mater. 12, 019902 (2024)

https://doi.org/10.1063/5.0192370

Published: January 2024

View article titled, Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]

Journal Articles

Silicon implantation and annealing in β-Ga₂O₃: Role of ambient, temperature, and time

Katie R. Gann, Naomi Pieczulewski, Cameron A. Gorsak, Karen Heinselman, Thaddeus J. Asel, Brenton A. Noesges, Kathleen T. Smith, Daniel M. Dryden, Huili Grace Xing, Hari P. Nair, David A. Muller, Michael O. Thompson

J. Appl. Phys. 135, 015302 (2024)

https://doi.org/10.1063/5.0184946

Published: January 2024

View article titled, Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time

Journal Articles

Non-alloyed ohmic contacts to (010) β -Ga₂O₃ with low contact resistance

Kathleen T. Smith, Cameron A. Gorsak, Avijit Kalra, Bennett J. Cromer, Kathy Azizie, Daniel M. Dryden, Darrell G. Schlom, Debdeep Jena, Hari P. Nair, Huili Grace Xing

Appl. Phys. Lett. 123, 242101 (2023)

https://doi.org/10.1063/5.0177618

Published: December 2023

View article titled, Non-alloyed ohmic contacts to (010) β -Ga2O3 with low contact resistance

Includes: Supplementary data

Journal Articles

Growth of β-Ga₂O₃ and ϵ/κ-Ga₂O₃ on AlN(0001) by molecular-beam epitaxy

APL Mater. 11, 111113 (2023)

https://doi.org/10.1063/5.0174373

Published: November 2023

View article titled, Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy

Journal Articles

AlN/AlGaN/AlN quantum well channel HEMTs

Jashan Singhal, Eungkyun Kim, Austin Hickman, Reet Chaudhuri, Yongjin Cho, Huili Grace Xing, Debdeep Jena

Appl. Phys. Lett. 122, 222106 (2023)

https://doi.org/10.1063/5.0145582

Published: June 2023

View article titled, AlN/AlGaN/AlN quantum well channel HEMTs

Journal Articles

Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates

Zexuan Zhang, Jashan Singhal, Shivali Agrawal, Eungkyun Kim, Vladimir Protasenko, Masato Toita, Huili Grace Xing, Debdeep Jena

Appl. Phys. Lett. 122, 212106 (2023)

https://doi.org/10.1063/5.0145826

Published: May 2023

View article titled, Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates

Journal Articles

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Eungkyun Kim, Zexuan Zhang, Jimy Encomendero, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Cheng Wang, Patrick Fay, Masato Toita, Debdeep Jena, Huili Grace Xing

Appl. Phys. Lett. 122, 092104 (2023)

https://doi.org/10.1063/5.0138939

Published: March 2023

View article titled, N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Journal Articles

Electric field induced migration of native point defects in Ga₂O₃ devices

Micah S. Haseman, Daram N. Ramdin, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Leonard J. Brillson

J. Appl. Phys. 133, 035701 (2023)

https://doi.org/10.1063/5.0124543

Published: January 2023

View article titled, Electric field induced migration of native point defects in Ga2O3 devices

Includes: Supplementary data

Journal Articles

Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures

Jashan Singhal, Reet Chaudhuri, Austin Hickman, Vladimir Protasenko, Huili Grace Xing, Debdeep Jena

APL Mater. 10, 111120 (2022)

https://doi.org/10.1063/5.0121195

Published: November 2022

View article titled, Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures

Journal Articles

HZO-based FerroNEMS MAC for in-memory computing

Shubham Jadhav, Ved Gund, Benyamin Davaji, Debdeep Jena, Huili (Grace) Xing, Amit Lal

Appl. Phys. Lett. 121, 193503 (2022)

https://doi.org/10.1063/5.0120629

Published: November 2022

View article titled, HZO-based FerroNEMS MAC for in-memory computing

Includes: Supplementary data

Journal Articles

Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions

Joseph Casamento, Thai-Son Nguyen, Yongjin Cho, Chandrashekhar Savant, Timothy Vasen, Shamima Afroz, Daniel Hannan, Huili (Grace) Xing, Debdeep Jena

Appl. Phys. Lett. 121, 192101 (2022)

https://doi.org/10.1063/5.0108475

Published: November 2022

View article titled, Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions

Includes: Supplementary data

NARROW

Topics

Two-carrier model-fitting of Hall effect in semiconductors with dual-band occupation: A case study in GaN two-dimensional hole gas

In situ etching of β-Ga₂O₃ using tert-butyl chloride in an MOCVD system

Chasing Schottky–Mott: Metal-first non-alloyed contacts to β-Ga₂O₃ for interface quality and minimal surface modification

Polarization-induced two-dimensional hole gases in N-polar AlGaN/GaN heterostructures

High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping

Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Ferroelectric AlBN films by molecular beam epitaxy

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Erratum: “Growth of β-Ga₂O₃ and ε/κ-Ga₂O₃ on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]

Silicon implantation and annealing in β-Ga₂O₃: Role of ambient, temperature, and time

Non-alloyed ohmic contacts to (010) β -Ga₂O₃ with low contact resistance

Growth of β-Ga₂O₃ and ϵ/κ-Ga₂O₃ on AlN(0001) by molecular-beam epitaxy

AlN/AlGaN/AlN quantum well channel HEMTs

Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Electric field induced migration of native point defects in Ga₂O₃ devices

Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures

HZO-based FerroNEMS MAC for in-memory computing

Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions

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