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Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112101 (2023)
https://doi.org/10.1063/5.0159560
Published: September 2023
View article titled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN
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Journal Articles

Temperature dependent characteristics of β -Ga2O3 FinFETs by MacEtch

Zhongjie Ren, Hsien-Chih Huang, Hanwool Lee, Clarence Chan, Henry C. Roberts, Xihang Wu, Aadil Waseem, A F M Anhar Uddin Bhuiyan, Hongping Zhao, Wenjuan Zhu, Xiuling Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 043505 (2023)
https://doi.org/10.1063/5.0159420
Published: July 2023
View article titled, Temperature dependent characteristics of <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> FinFETs by MacEtch
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Journal Articles

The role of carbon and C-H neutralization in MOCVD β-Ga2O3 using TMGa as precursor

Lingyu Meng, A F M Anhar Uddin Bhuiyan, Hongping Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 232106 (2023)
https://doi.org/10.1063/5.0153626
Published: June 2023
View article titled, The role of carbon and C-H neutralization in MOCVD β-Ga<sub>2</sub>O<sub>3</sub> using TMGa as precursor
Open the PDF for The role of carbon and C-H neutralization in MOCVD β-Ga<sub>2</sub>O<sub>3</sub> using TMGa as precursor in another window
Journal Articles

Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures

A. F. M. Anhar Uddin Bhuiyan, Zixuan Feng, Lingyu Meng, Hongping Zhao
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 211103 (2023)
https://doi.org/10.1063/5.0147787
Published: June 2023
View article titled, Tutorial: Metalorganic chemical vapor deposition of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> thin films, alloys, and heterostructures
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Journal Articles

Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX

Chinmoy Nath Saha, Abhishek Vaidya, A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Shivam Sharma, Hongping Zhao, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 182106 (2023)
https://doi.org/10.1063/5.0149062
Published: May 2023
View article titled, Scaled β-Ga<sub>2</sub>O<sub>3</sub> thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz f<sub>MAX</sub>
Open the PDF for Scaled β-Ga<sub>2</sub>O<sub>3</sub> thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz f<sub>MAX</sub> in another window
Includes: Supplementary data
Journal Articles

Investigation of carbon incorporation in laser-assisted MOCVD of GaN

Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Kaitian Zhang, Hongping Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 162101 (2023)
https://doi.org/10.1063/5.0144584
Published: April 2023
View article titled, Investigation of carbon incorporation in laser-assisted MOCVD of GaN
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Journal Articles

Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes

Kaitian Zhang, Chenxi Hu, Vijay Gopal Thirupakuzi Vangipuram, Kathleen Kash, Hongping Zhao
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 033206 (2023)
https://doi.org/10.1116/6.0002524
Published: April 2023
View article titled, Design of InGaN-ZnSnGa<sub>2</sub>N<sub>4</sub> quantum wells for high-efficiency amber light emitting diodes
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Journal Articles

Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang, Jith Sarker, Chris Chae, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao
Journal: APL Materials
APL Mater. 11, 041112 (2023)
https://doi.org/10.1063/5.0142746
Published: April 2023
View article titled, Metalorganic chemical vapor deposition of β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films on (001) β-Ga<sub>2</sub>O<sub>3</sub> substrates
Open the PDF for Metalorganic chemical vapor deposition of β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films on (001) β-Ga<sub>2</sub>O<sub>3</sub> substrates in another window
Journal Articles

Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2

Vishank Talesara, Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Hongping Zhao, Wu Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 123501 (2023)
https://doi.org/10.1063/5.0135313
Published: March 2023
View article titled, Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm<sup>2</sup>
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Journal Articles

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

Joe F. McGlone, Hemant Ghadi, Evan Cornuelle, Andrew Armstrong, George Burns, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 045702 (2023)
https://doi.org/10.1063/5.0121416
Published: January 2023
View article titled, Proton radiation effects on electronic defect states in MOCVD-grown (010) <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Metalorganic chemical vapor deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates

Lingyu Meng, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Jinwoo Hwang, Hongping Zhao
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062706 (2022)
https://doi.org/10.1116/6.0002179
Published: November 2022
View article titled, Metalorganic chemical vapor deposition of (100) β-Ga<sub>2</sub>O<sub>3</sub> on on-axis Ga<sub>2</sub>O<sub>3</sub> substrates
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Journal Articles

MOCVD growth and band offsets of κ-phase Ga2O3 on c-plane sapphire, GaN- and AlN-on-sapphire, and (100) YSZ substrates

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062704 (2022)
https://doi.org/10.1116/6.0002106
Published: November 2022
View article titled, MOCVD growth and band offsets of κ-phase Ga<sub>2</sub>O<sub>3</sub> on c-plane sapphire, GaN- and AlN-on-sapphire, and (100) YSZ substrates
Open the PDF for MOCVD growth and band offsets of κ-phase Ga<sub>2</sub>O<sub>3</sub> on c-plane sapphire, GaN- and AlN-on-sapphire, and (100) YSZ substrates in another window
Includes: Supplementary data
Journal Articles

Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3

Hemant Ghadi, Joe F. McGlone, Evan Cornuelle, Zixuan Feng, Yuxuan Zhang, Lingyu Meng, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel
Journal: APL Materials
APL Mater. 10, 101110 (2022)
https://doi.org/10.1063/5.0101829
Published: October 2022
View article titled, Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

In situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1−x)2O3 thin films

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang, Jinwoo Hwang, Hongping Zhao
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 165301 (2022)
https://doi.org/10.1063/5.0104433
Published: October 2022
View article titled, <em>In situ</em> MOCVD growth and band offsets of Al<sub>2</sub>O<sub>3</sub> dielectric on β-Ga<sub>2</sub>O<sub>3</sub> and β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films
Open the PDF for <em>In situ</em> MOCVD growth and band offsets of Al<sub>2</sub>O<sub>3</sub> dielectric on β-Ga<sub>2</sub>O<sub>3</sub> and β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films in another window
Includes: Supplementary data
Journal Articles

We are 60!

Paola Borri, Liza Herrera Diez, Qing Hu, David L. Price, Hongping Zhao, Lesley F. Cohen
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 100401 (2022)
https://doi.org/10.1063/5.0122147
Published: September 2022
View article titled, We are 60!
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Journal Articles

β -Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

Hsien-Chih Huang, Zhongjie Ren, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Zhendong Yang, Xixi Luo, Alex Q. Huang, Andrew Green, Kelson Chabak, Hongping Zhao, Xiuling Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 052102 (2022)
https://doi.org/10.1063/5.0096490
Published: August 2022
View article titled, β -Ga<sub>2</sub>O<sub>3</sub> FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching
Open the PDF for β -Ga<sub>2</sub>O<sub>3</sub> FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching in another window
Includes: Supplementary data
Journal Articles

Si doping in MOCVD grown (010) β-(AlxGa1−x)2O3 thin films

A. F. M. Anhar Uddin Bhuiyan, Zixuan Feng, Lingyu Meng, Andreas Fiedler, Hsien-Lien Huang, Adam T. Neal, Erich Steinbrunner, Shin Mou, Jinwoo Hwang, Siddharth Rajan, Hongping Zhao
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 145301 (2022)
https://doi.org/10.1063/5.0084062
Published: April 2022
View article titled, Si doping in MOCVD grown (010) β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films
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Journal Articles

Schottky diode characteristics on high-growth rate LPCVD β -Ga2O3 films on (010) and (001) Ga2O3 substrates

Sudipto Saha, Lingyu Meng, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 122106 (2022)
https://doi.org/10.1063/5.0083659
Published: March 2022
View article titled, Schottky diode characteristics on high-growth rate LPCVD <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> films on (010) and (001) Ga<sub>2</sub>O<sub>3</sub> substrates
Open the PDF for Schottky diode characteristics on high-growth rate LPCVD <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> films on (010) and (001) Ga<sub>2</sub>O<sub>3</sub> substrates in another window
Includes: Supplementary data
Journal Articles

A perspective on β -Ga2O3 micro/nanoelectromechanical systems

Xu-Qian Zheng, Hongping Zhao, Philip X.-L. Feng
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 040502 (2022)
https://doi.org/10.1063/5.0073005
Published: January 2022
View article titled, A perspective on <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> micro/nanoelectromechanical systems
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Journal Articles

Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao
Journal: APL Materials
APL Mater. 9, 101109 (2021)
https://doi.org/10.1063/5.0065087
Published: October 2021
View article titled, Metalorganic chemical vapor deposition of α-Ga<sub>2</sub>O<sub>3</sub> and α-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films on m-plane sapphire substrates
Open the PDF for Metalorganic chemical vapor deposition of α-Ga<sub>2</sub>O<sub>3</sub> and α-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films on m-plane sapphire substrates in another window
Includes: Supplementary data