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Journal Articles

Thin channel Ga₂O₃ MOSFET with 55 GHz f_MAX and > 100 V breakdown

Chinmoy Nath Saha, Abhishek Vaidya, Noor Jahan Nipu, Lingyu Meng, Dong Su Yu, Hongping Zhao, Uttam Singisetti

Appl. Phys. Lett. 125, 062101 (2024)

https://doi.org/10.1063/5.0208580

Published: August 2024

View article titled, Thin channel Ga2O3 MOSFET with 55 GHz fMAX and > 100 V breakdown

Journal Articles

High growth rate metal organic chemical vapor deposition grown Ga₂O₃ (010) Schottky diodes

Sudipto Saha, Lingyu Meng, Dong Su Yu, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Uttam Singisetti

J. Vac. Sci. Technol. A 42, 042705 (2024)

https://doi.org/10.1116/6.0003533

Published: July 2024

View article titled, High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes

Journal Articles

Wet and dry etching of ultrawide bandgap LiGa₅O₈ and LiGaO₂

Vijay Gopal Thirupakuzi Vangipuram, Kaitian Zhang, Hongping Zhao

J. Vac. Sci. Technol. B 42, 032204 (2024)

https://doi.org/10.1116/6.0003450

Published: April 2024

View article titled, Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2

Journal Articles

Experimental determination of the band offsets at the UWBG p-LiGa₅O₈/Ga₂O₃ interface

Kaitian Zhang, Vijay Gopal Thirupakuzi Vangipuram, Christopher Chae, Jinwoo Hwang, Hongping Zhao

Appl. Phys. Lett. 124, 122106 (2024)

https://doi.org/10.1063/5.0200125

Published: March 2024

View article titled, Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface

Includes: Supplementary data

Journal Articles

Design of AlGaN-Zn(Si,Ge)N₂ quantum wells for high-efficiency ultraviolet light emitters

Chenxi Hu, Kathleen Kash, Hongping Zhao

J. Appl. Phys. 135, 023101 (2024)

https://doi.org/10.1063/5.0182716

Published: January 2024

View article titled, Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters

Journal Articles

Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

Kaitian Zhang, Chenxi Hu, Vijay Gopal Thirupakuzi Vangipuram, Lingyu Meng, Christopher Chae, Menglin Zhu, Jinwoo Hwang, Kathleen Kash, Hongping Zhao

J. Vac. Sci. Technol. B 41, 062207 (2023)

https://doi.org/10.1116/6.0003141

Published: November 2023

View article titled, Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

Journal Articles

Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy

Shubham Mondal, Ding Wang, A F M Anhar Uddin Bhuiyan, Mingtao Hu, Maddaka Reddeppa, Ping Wang, Hongping Zhao, Zetian Mi

Appl. Phys. Lett. 123, 182106 (2023)

https://doi.org/10.1063/5.0173637

Published: November 2023

View article titled, Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy

Journal Articles

7.86 kV GaN-on-GaN PN power diode with BaTiO₃ for electrical field management

Yibo Xu, Vijay Gopal Thirupakuzi Vangipuram, Vishank Talesara, Junao Cheng, Yuxuan Zhang, Tadao Hashimoto, Edward Letts, Daryl Key, Hongping Zhao, Wu Lu

Appl. Phys. Lett. 123, 142105 (2023)

https://doi.org/10.1063/5.0164119

Published: October 2023

View article titled, 7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management

Journal Articles

Electrical characteristics of in situ Mg-doped β-Ga₂O₃ current-blocking layer for vertical devices

Sudipto Saha, Lingyu Meng, A. F. M. Anhar Uddin Bhuiyan, Ankit Sharma, Chinmoy Nath Saha, Hongping Zhao, Uttam Singisetti

Appl. Phys. Lett. 123, 132105 (2023)

https://doi.org/10.1063/5.0155882

Published: September 2023

View article titled, Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices

Includes: Supplementary data

Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart

Appl. Phys. Lett. 123, 112101 (2023)

https://doi.org/10.1063/5.0159560

Published: September 2023

View article titled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Journal Articles

Temperature dependent characteristics of β -Ga₂O₃ FinFETs by MacEtch

Zhongjie Ren, Hsien-Chih Huang, Hanwool Lee, Clarence Chan, Henry C. Roberts, Xihang Wu, Aadil Waseem, A F M Anhar Uddin Bhuiyan, Hongping Zhao, Wenjuan Zhu, Xiuling Li

Appl. Phys. Lett. 123, 043505 (2023)

https://doi.org/10.1063/5.0159420

Published: July 2023

View article titled, Temperature dependent characteristics of β -Ga2O3 FinFETs by MacEtch

Journal Articles

The role of carbon and C-H neutralization in MOCVD β-Ga₂O₃ using TMGa as precursor

Lingyu Meng, A F M Anhar Uddin Bhuiyan, Hongping Zhao

Appl. Phys. Lett. 122, 232106 (2023)

https://doi.org/10.1063/5.0153626

Published: June 2023

View article titled, The role of carbon and C-H neutralization in MOCVD β-Ga2O3 using TMGa as precursor

Journal Articles

Tutorial: Metalorganic chemical vapor deposition of β-Ga₂O₃ thin films, alloys, and heterostructures

A. F. M. Anhar Uddin Bhuiyan, Zixuan Feng, Lingyu Meng, Hongping Zhao

J. Appl. Phys. 133, 211103 (2023)

https://doi.org/10.1063/5.0147787

Published: June 2023

View article titled, Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures

Journal Articles

Scaled β-Ga₂O₃ thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz f_MAX

Chinmoy Nath Saha, Abhishek Vaidya, A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Shivam Sharma, Hongping Zhao, Uttam Singisetti

Appl. Phys. Lett. 122, 182106 (2023)

https://doi.org/10.1063/5.0149062

Published: May 2023

View article titled, Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX

Includes: Supplementary data

Journal Articles

Investigation of carbon incorporation in laser-assisted MOCVD of GaN

Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Kaitian Zhang, Hongping Zhao

Appl. Phys. Lett. 122, 162101 (2023)

https://doi.org/10.1063/5.0144584

Published: April 2023

View article titled, Investigation of carbon incorporation in laser-assisted MOCVD of GaN

Journal Articles

Design of InGaN-ZnSnGa₂N₄ quantum wells for high-efficiency amber light emitting diodes

Kaitian Zhang, Chenxi Hu, Vijay Gopal Thirupakuzi Vangipuram, Kathleen Kash, Hongping Zhao

J. Vac. Sci. Technol. A 41, 033206 (2023)

https://doi.org/10.1116/6.0002524

Published: April 2023

View article titled, Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes

Journal Articles

Metalorganic chemical vapor deposition of β-(Al_xGa_1−x)₂O₃ thin films on (001) β-Ga₂O₃ substrates

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang, Jith Sarker, Chris Chae, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao

APL Mater. 11, 041112 (2023)

https://doi.org/10.1063/5.0142746

Published: April 2023

View article titled, Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates

Journal Articles

Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm²

Vishank Talesara, Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Hongping Zhao, Wu Lu

Appl. Phys. Lett. 122, 123501 (2023)

https://doi.org/10.1063/5.0135313

Published: March 2023

View article titled, Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2

Journal Articles

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃

Joe F. McGlone, Hemant Ghadi, Evan Cornuelle, Andrew Armstrong, George Burns, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel

J. Appl. Phys. 133, 045702 (2023)

https://doi.org/10.1063/5.0121416

Published: January 2023

View article titled, Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

Journal Articles

Metalorganic chemical vapor deposition of (100) β-Ga₂O₃ on on-axis Ga₂O₃ substrates

Lingyu Meng, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Jinwoo Hwang, Hongping Zhao

J. Vac. Sci. Technol. A 40, 062706 (2022)

https://doi.org/10.1116/6.0002179

Published: November 2022

View article titled, Metalorganic chemical vapor deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates

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Topics

Thin channel Ga₂O₃ MOSFET with 55 GHz f_MAX and > 100 V breakdown

High growth rate metal organic chemical vapor deposition grown Ga₂O₃ (010) Schottky diodes

Wet and dry etching of ultrawide bandgap LiGa₅O₈ and LiGaO₂

Experimental determination of the band offsets at the UWBG p-LiGa₅O₈/Ga₂O₃ interface

Design of AlGaN-Zn(Si,Ge)N₂ quantum wells for high-efficiency ultraviolet light emitters

Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy

7.86 kV GaN-on-GaN PN power diode with BaTiO₃ for electrical field management

Electrical characteristics of in situ Mg-doped β-Ga₂O₃ current-blocking layer for vertical devices

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Temperature dependent characteristics of β -Ga₂O₃ FinFETs by MacEtch

The role of carbon and C-H neutralization in MOCVD β-Ga₂O₃ using TMGa as precursor

Tutorial: Metalorganic chemical vapor deposition of β-Ga₂O₃ thin films, alloys, and heterostructures

Scaled β-Ga₂O₃ thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz f_MAX

Investigation of carbon incorporation in laser-assisted MOCVD of GaN

Design of InGaN-ZnSnGa₂N₄ quantum wells for high-efficiency amber light emitting diodes

Metalorganic chemical vapor deposition of β-(Al_xGa_1−x)₂O₃ thin films on (001) β-Ga₂O₃ substrates

Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm²

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃

Metalorganic chemical vapor deposition of (100) β-Ga₂O₃ on on-axis Ga₂O₃ substrates

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