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Journal Articles

Charge balance effect on the phase stability and reliability in doped HfO₂-ZrO₂ superlattice films for further DRAM capacitors: A first-principles study

Ting Zhang, Maokun Wu, Miaojia Yuan, Yichen Wen, Yilin Hu, Xuepei Wang, Boyao Cui, Jinhao Liu, Yishan Wu, Hong Dong, Feng Lu, Wei-Hua Wang, Pengpeng Ren, Sheng Ye, Hong-Liang Lu, Runsheng Wang, Zhigang Ji, Ru Huang

Appl. Phys. Lett. 126, 102901 (2025)

https://doi.org/10.1063/5.0252127

Published: March 2025

View article titled, Charge balance effect on the phase stability and reliability in doped HfO2-ZrO2 superlattice films for further DRAM capacitors: A first-principles study

Journal Articles

Large positive V_FB shift achieved by a band alignment modulated with insertion of Ga₂O₃ dipole layer

Xiao-Na Zhu, Lei Shen, Yu-Chun Li, Yu-Dong Lv, Cai-Yu Shi, Teng Huang, Zi-Ying Huang, David Wei Zhang, Hong-Liang Lu

Appl. Phys. Lett. 126, 083506 (2025)

https://doi.org/10.1063/5.0252518

Published: February 2025

View article titled, Large positive VFB shift achieved by a band alignment modulated with insertion of Ga2O3 dipole layer

Journal Articles

Insights into the ferroelectric orthorhombic phase formation in doped HfO₂ thin films

Yichen Wen, Maokun Wu, Boyao Cui, Xuepei Wang, Yishan Wu, Yu-Chun Li, Sheng Ye, Pengpeng Ren, Hong-Liang Lu, Runsheng Wang, Zhigang Ji, Ru Huang

J. Appl. Phys. 136, 124105 (2024)

https://doi.org/10.1063/5.0226390

Published: September 2024

View article titled, Insights into the ferroelectric orthorhombic phase formation in doped HfO2 thin films

Journal Articles

Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf_0.5Zr_0.5O₂ ferroelectric thin films

Xuepei Wang, Maokun Wu, Ting Zhang, Boyao Cui, Yu-Chun Li, Jinhao Liu, Yishan Wu, Yichen Wen, Sheng Ye, Pengpeng Ren, David Wei Zhang, Hong-Liang Lu, Runsheng Wang, Zhigang Ji, Ru Huang

Appl. Phys. Lett. 124, 232901 (2024)

https://doi.org/10.1063/5.0207775

Published: June 2024

View article titled, Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films

Journal Articles

Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO₂ thin films

Li Feng, Yu-Chun Li, Teng Huang, Hong-Liang Lu, David Wei Zhang

AIP Advances 14, 015105 (2024)

https://doi.org/10.1063/5.0175930

Published: January 2024

View article titled, Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films

Journal Articles

Van der Waals integrated plasmonic Au array for self-powered MoS₂ photodetector

Mengru Zhang, Guang Zeng, Guangjian Wu, Jinhua Zeng, Yize Sun, Chao Li, Lei Liu, Jianlu Wang, Hong-Liang Lu, Yang Chai, Jingli Wang

Appl. Phys. Lett. 122, 253503 (2023)

https://doi.org/10.1063/5.0151147

Published: June 2023

View article titled, Van der Waals integrated plasmonic Au array for self-powered MoS2 photodetector

Journal Articles

Enhanced memory properties of HfO₂-based ferroelectric capacitor by inserting Al₂O₃/ZrO₂ stack interfacial layer

Yu-Chun Li, Xiao-Xi Li, Teng Huang, Ze-Yu Gu, Qiu-Jun Yu, Yin-Chi Liu, David Wei Zhang, Xiao-Na Zhu, Hong-Liang Lu

Appl. Phys. Lett. 122, 172902 (2023)

https://doi.org/10.1063/5.0138158

Published: April 2023

View article titled, Enhanced memory properties of HfO2-based ferroelectric capacitor by inserting Al2O3/ZrO2 stack interfacial layer

Includes: Supplementary data

Journal Articles

Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfO_x-based resistive random access memory

Cheng-Zhou Hang, Chen Wang, Bin Gao, Huan Chen, Ming-Hong Xu, Liang Hao, Hong-Liang Lu

Appl. Phys. Lett. 114, 112102 (2019)

https://doi.org/10.1063/1.5078782

Published: March 2019

View article titled, Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory

Journal Articles

Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition

Li-Yuan Zhu, Jian-Guo Yang, Kaiping Yuan, Hong-Yan Chen, Tao Wang, Hong-Ping Ma, Wei Huang, Hong-Liang Lu, David Wei Zhang

APL Mater. 6, 121109 (2018)

https://doi.org/10.1063/1.5057889

Published: December 2018

View article titled, Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition

Includes: Supplementary data

Journal Articles

Band alignment of AlN/β-Ga₂O₃ heterojunction interface measured by x-ray photoelectron spectroscopy

Jin-Xin Chen, Jia-Jia Tao, Hong-Ping Ma, Hao Zhang, Ji-Jun Feng, Wen-Jun Liu, Changtai Xia, Hong-Liang Lu, David Wei Zhang

Appl. Phys. Lett. 112, 261602 (2018)

https://doi.org/10.1063/1.5035372

Published: June 2018

View article titled, Band alignment of AlN/β-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy

Journal Articles

High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

Jian Gao, Wen-Jun Liu, Shi-Jin Ding, Hong-Liang Lu, David Wei Zhang

AIP Advances 8, 015015 (2018)

https://doi.org/10.1063/1.5007131

Published: January 2018

View article titled, High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

Journal Articles

Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition

Shang-Bin Zhu, Hong-Liang Lu, Qiu-Xiang Zhang, Yuan Zhang, Qing-Qing Sun, Peng Zhou, Shi-Jin Ding, David Wei Zhang

J. Vac. Sci. Technol. A 33, 01A138 (2015)

https://doi.org/10.1116/1.4903935

Published: December 2014

View article titled, Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition

Journal Articles

Band alignment and interfacial structure of ZnO/Si heterojunction with Al₂O₃ and HfO₂ as interlayers

Hong-Liang Lu, Ming Yang, Zhang-Yi Xie, Yang Geng, Yuan Zhang, Peng-Fei Wang, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang

Appl. Phys. Lett. 104, 161602 (2014)

https://doi.org/10.1063/1.4872175

Published: April 2014

View article titled, Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers

Journal Articles

Distortion of electronic structure in HfO₂ induced by the out-diffused As from GaAs substrate

Jing-Lan He, Qing-Qing Sun, Hong-Liang Lu, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang

J. Appl. Phys. 113, 186101 (2013)

https://doi.org/10.1063/1.4804059

Published: May 2013

View article titled, Distortion of electronic structure in HfO2 induced by the out-diffused As from GaAs substrate

Journal Articles

The physics and backward diode behavior of heavily doped single layer MoS₂ based p-n junctions

Qing-Qing Sun, Yong-Jun Li, Jin-Lan He, Wen Yang, Peng Zhou, Hong-Liang Lu, Shi-Jing Ding, David Wei Zhang

Appl. Phys. Lett. 102, 093104 (2013)

https://doi.org/10.1063/1.4794802

Published: March 2013

View article titled, The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions

Journal Articles

Energy band alignment of InGaZnO₄/Si heterojunction determined by x-ray photoelectron spectroscopy

Zhang-Yi Xie, Hong-Liang Lu, Sai-Sheng Xu, Yang Geng, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang

Appl. Phys. Lett. 101, 252111 (2012)

https://doi.org/10.1063/1.4773299

Published: December 2012

View article titled, Energy band alignment of InGaZnO4/Si heterojunction determined by x-ray photoelectron spectroscopy

Journal Articles

The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding, David Wei Zhang

Appl. Phys. Lett. 100, 063509 (2012)

https://doi.org/10.1063/1.3681366

Published: February 2012

View article titled, The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

Journal Articles

Resistive switching properties of plasma enhanced-ALD La₂O₃ for novel nonvolatile memory application

Lin Chen, Wen Yang, Ye Li, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding, David Wei Zhang

J. Vac. Sci. Technol. A 30, 01A148 (2012)

https://doi.org/10.1116/1.3669516

Published: December 2011

View article titled, Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application

Journal Articles

Investigation on GaAs surface treated with dimethylaluminumhydride

Hong-Liang Lu, Xiao-Liang Wang, Masakazu Sugiyama, Yukihiro Shimogaki

Appl. Phys. Lett. 95, 212102 (2009)

https://doi.org/10.1063/1.3268450

Published: November 2009

View article titled, Investigation on GaAs surface treated with dimethylaluminumhydride

Journal Articles

In situ passivation of InP surface using H 2 S during metal organic vapor phase epitaxy

Hong-Liang Lu, Yuki Terada, Yukihiro Shimogaki, Yoshiaki Nakano, Masakazu Sugiyama

Appl. Phys. Lett. 95, 152103 (2009)

https://doi.org/10.1063/1.3233935

Published: October 2009

View article titled, In situ passivation of InP surface using H 2 S during metal organic vapor phase epitaxy

NARROW

Topics

Charge balance effect on the phase stability and reliability in doped HfO₂-ZrO₂ superlattice films for further DRAM capacitors: A first-principles study

Large positive V_FB shift achieved by a band alignment modulated with insertion of Ga₂O₃ dipole layer

Insights into the ferroelectric orthorhombic phase formation in doped HfO₂ thin films

Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf_0.5Zr_0.5O₂ ferroelectric thin films

Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO₂ thin films

Van der Waals integrated plasmonic Au array for self-powered MoS₂ photodetector

Enhanced memory properties of HfO₂-based ferroelectric capacitor by inserting Al₂O₃/ZrO₂ stack interfacial layer

Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfO_x-based resistive random access memory

Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition

Band alignment of AlN/β-Ga₂O₃ heterojunction interface measured by x-ray photoelectron spectroscopy

High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition

Band alignment and interfacial structure of ZnO/Si heterojunction with Al₂O₃ and HfO₂ as interlayers

Distortion of electronic structure in HfO₂ induced by the out-diffused As from GaAs substrate

The physics and backward diode behavior of heavily doped single layer MoS₂ based p-n junctions

Energy band alignment of InGaZnO₄/Si heterojunction determined by x-ray photoelectron spectroscopy

The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

Resistive switching properties of plasma enhanced-ALD La₂O₃ for novel nonvolatile memory application

Investigation on GaAs surface treated with dimethylaluminumhydride

In situ passivation of InP surface using H 2 S during metal organic vapor phase epitaxy

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