Page 1 | Search Results | AIP Publishing

1-20 of 77

Sort by

Sort Order Select

Journal Articles

Optoelectronic synapse based on the Bi₂O₂Se/Cs₃Cu₂I₅ heterojunction for neuromorphic computing

Jinwen Lin, Bin Li, Zheng Yin, Sicheng Wan, Yao Meng, Hong Zhou, Fangliang Gao, Shuti Li, Yong Zhang, Qingbing Zha, Jinhua Li, Said Nasir Khisro, Xinman Chen

Appl. Phys. Lett. 126, 013502 (2025)

https://doi.org/10.1063/5.0236853

Published: January 2025

View article titled, Optoelectronic synapse based on the Bi2O2Se/Cs3Cu2I5 heterojunction for neuromorphic computing

Journal Articles

Tip clearance influence on the performance of high-speed micro-pumps

Hong Zhou, Rong Xue, Yuecheng Liang, Ben Niu, Shuangtao Chen, Yu Hou

Physics of Fluids 36, 115129 (2024)

https://doi.org/10.1063/5.0234409

Published: November 2024

View article titled, Tip clearance influence on the performance of high-speed micro-pumps

Journal Articles

Performant automatic differentiation of local coupled cluster theories: Response properties and ab initio molecular dynamics

Xing Zhang, Chenghan Li, Hong-Zhou Ye, Timothy C. Berkelbach, Garnet Kin-Lic Chan

J. Chem. Phys. 161, 014109 (2024)

https://doi.org/10.1063/5.0212274

Published: July 2024

View article titled, Performant automatic differentiation of local coupled cluster theories: Response properties and ab initio molecular dynamics

Journal Articles

Code plagiarism detection based on graph density clustering

Hong Zhou Zhao, Hao Min Hou, Li Wang, Can Jin Xu

AIP Conf. Proc. 2991, 050032 (2024)

https://doi.org/10.1063/5.0198996

Published: June 2024

View article titled, Code plagiarism detection based on graph density clustering

Journal Articles

Lattice thermal conductivity of solid LiF based on machine learning force fields and the Green–Kubo approach

Si-xuan Li, Di Fan, Jia-chen Wang, Wen-qian Chen, Hong-zhou Song, Yong Lu

J. Appl. Phys. 135, 175901 (2024)

https://doi.org/10.1063/5.0200038

Published: May 2024

View article titled, Lattice thermal conductivity of solid LiF based on machine learning force fields and the Green–Kubo approach

Journal Articles

Low turn-on voltage and 2.3 kV β -Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode

Chunxu Su, Hong Zhou, Kun Zhang, Chenlu Wang, Sihan Sun, Hehe Gong, Jiandong Ye, Zhihong Liu, Kui Dang, Zheyuan Hu, Xiaodong Zhang, Jie Wei, Xiaorong Luo, Jincheng Zhang, Rong Zhang, Yue Hao

Appl. Phys. Lett. 124, 173506 (2024)

https://doi.org/10.1063/5.0189890

Published: April 2024

View article titled, Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode

Journal Articles

Internal-locking relativistic magnetron in transversely opposed driven scheme

Hao Zhou, Hao Li, Hai-Yang Wang, Biao Hu, Yi-Hong Zhou, Ting-Xu Chen, Jiao-Yin Wang, Jie Cai, Bo Peng, Yun-Tao Liu, Ming-Yu Yang, Tian-Ming Li

Phys. Plasmas 31, 023102 (2024)

https://doi.org/10.1063/5.0187084

Published: February 2024

View article titled, Internal-locking relativistic magnetron in transversely opposed driven scheme

Journal Articles

Erratum: “Low ohmic contact resistivity realized by in situ SiN_x insertion for high Al-composition-AlGaN/GaN heterostructure” [Appl. Phys. Lett. 121 , 172102 (2022)]

Hanghai Du, Zhihong Liu, Lu Hao, Weichuan Xing, Weihang Zhang, Hong Zhou, Jincheng Zhang, Yue Hao

Appl. Phys. Lett. 124, 039902 (2024)

https://doi.org/10.1063/5.0195385

Published: January 2024

View article titled, Erratum: “Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure” [Appl. Phys. Lett. 121 , 172102 (2022)]

Journal Articles

Demonstration of the normally off β -Ga₂O₃ MOSFET with high threshold voltage and high current density

Yuncong Cai, Zhaoqing Feng, Zhengxing Wang, Xiufeng Song, Zhuangzhuang Hu, Xusheng Tian, Chunfu Zhang, Zhihong Liu, Qian Feng, Hong Zhou, Jincheng Zhang, Yue Hao

Appl. Phys. Lett. 123, 193501 (2023)

https://doi.org/10.1063/5.0165780

Published: November 2023

View article titled, Demonstration of the normally off β -Ga2O3 MOSFET with high threshold voltage and high current density

Journal Articles

Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al_0.6Ga_0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Hanghai Du, Zhihong Liu, Lu Hao, Guangjie Gao, Weichuan Xing, Weihang Zhang, Yachao Zhang, Hong Zhou, Shenglei Zhao, Jincheng Zhang, Yue Hao

Appl. Phys. Lett. 122, 152107 (2023)

https://doi.org/10.1063/5.0131988

Published: April 2023

View article titled, Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Journal Articles

Comparative study of first-principles approaches for effective Coulomb interaction strength U_eff between localized f-electrons: Lanthanide metals as an example

Bei-Lei Liu, Yue-Chao Wang, Yu Liu, Yuan-Ji Xu, Xin Chen, Hong-Zhou Song, Yan Bi, Hai-Feng Liu, Hai-Feng Song

J. Chem. Phys. 158, 084108 (2023)

https://doi.org/10.1063/5.0137264

Published: February 2023

View article titled, Comparative study of first-principles approaches for effective Coulomb interaction strength Ueff between localized f-electrons: Lanthanide metals as an example

Journal Articles

Accurate thermochemistry of covalent and ionic solids from spin-component-scaled MP2

Tamar Goldzak, Xiao Wang, Hong-Zhou Ye, Timothy C. Berkelbach

J. Chem. Phys. 157, 174112 (2022)

https://doi.org/10.1063/5.0119633

Published: November 2022

View article titled, Accurate thermochemistry of covalent and ionic solids from spin-component-scaled MP2

Journal Articles

Low ohmic contact resistivity realized by in situ SiN_x insertion for high Al-composition-AlGaN/GaN heterostructure

Hanghai Du, Zhihong Liu, Lu Hao, Weichuan Xing, Weihang Zhang, Hong Zhou, Jincheng Zhang, Yue Hao

Appl. Phys. Lett. 121, 172102 (2022)

https://doi.org/10.1063/5.0100329

Published: October 2022

View article titled, Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure

Journal Articles

Tunable broadband terahertz metamaterial absorber based on vanadium dioxide

Guishuang Yang, Fengping Yan, Xuemei Du, Ting Li, Wei Wang, Yuling Lv, Hong Zhou, Yafei Hou

AIP Advances 12, 045219 (2022)

https://doi.org/10.1063/5.0082295

Published: April 2022

View article titled, Tunable broadband terahertz metamaterial absorber based on vanadium dioxide

Journal Articles

Hysteresis-free and μs-switching of D/E-modes Ga₂O₃ hetero-junction FETs with the BV²/R_on,sp of 0.74/0.28 GW/cm²

Chenlu Wang, Hong Zhou, Jincheng Zhang, Wenxiang Mu, Jie Wei, Zhitai Jia, Xuefeng Zheng, Xiaorong Luo, Xutang Tao, Yue Hao

Appl. Phys. Lett. 120, 112101 (2022)

https://doi.org/10.1063/5.0084804

Published: March 2022

View article titled, Hysteresis-free and μs-switching of D/E-modes Ga2O3 hetero-junction FETs with the BV2/Ron,sp of 0.74/0.28 GW/cm2

Journal Articles

Low density of interface trap states and temperature dependence study of Ga₂O₃ Schottky barrier diode with p-NiO_x termination

Qinglong Yan, Hehe Gong, Hong Zhou, Jincheng Zhang, Jiandong Ye, Zhihong Liu, Chenlu Wang, Xuefeng Zheng, Rong Zhang, Yue Hao

Appl. Phys. Lett. 120, 092106 (2022)

https://doi.org/10.1063/5.0082377

Published: March 2022

View article titled, Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination

Journal Articles

Spectral modulation of blocked-impurity-band hybrid structure terahertz detector

Bingbing Wang, Yulu Chen, Wulin Tong, Yangzhou Zhou, Jiajia Tao, Zewen Wang, Zuoru Dong, Hong Zhou, Zhanglong Fu, DiXiang Shao, Xiaodong Wang, Juncheng Cao

Appl. Phys. Lett. 120, 071102 (2022)

https://doi.org/10.1063/5.0082048

Published: February 2022

View article titled, Spectral modulation of blocked-impurity-band hybrid structure terahertz detector

Includes: Supplementary data

Journal Articles

Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

Zhiwen Liang, Hanghai Du, Ye Yuan, Qi Wang, Junjie Kang, Hong Zhou, Jincheng Zhang, Yue Hao, Xinqiang Wang, Guoyi Zhang

Appl. Phys. Lett. 119, 252101 (2021)

https://doi.org/10.1063/5.0074453

Published: December 2021

View article titled, Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

Journal Articles

Tight distance-dependent estimators for screening two-center and three-center short-range Coulomb integrals over Gaussian basis functions

Hong-Zhou Ye, Timothy C. Berkelbach

J. Chem. Phys. 155, 124106 (2021)

https://doi.org/10.1063/5.0064151

Published: September 2021

View article titled, Tight distance-dependent estimators for screening two-center and three-center short-range Coulomb integrals over Gaussian basis functions

Includes: Supplementary data

Journal Articles

Language-familiarity effect on voice recognition by blind listeners

Linjun Zhang, Yu Li, Hong Zhou, Yang Zhang, Hua Shu

JASA Express Lett. 1, 055201 (2021)

https://doi.org/10.1121/10.0004848

Published: May 2021

View article titled, Language-familiarity effect on voice recognition by blind listeners

Includes: Supplementary data

NARROW

Topics

Optoelectronic synapse based on the Bi₂O₂Se/Cs₃Cu₂I₅ heterojunction for neuromorphic computing

Tip clearance influence on the performance of high-speed micro-pumps

Performant automatic differentiation of local coupled cluster theories: Response properties and ab initio molecular dynamics

Code plagiarism detection based on graph density clustering

Lattice thermal conductivity of solid LiF based on machine learning force fields and the Green–Kubo approach

Low turn-on voltage and 2.3 kV β -Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode

Internal-locking relativistic magnetron in transversely opposed driven scheme

Erratum: “Low ohmic contact resistivity realized by in situ SiN_x insertion for high Al-composition-AlGaN/GaN heterostructure” [Appl. Phys. Lett. 121 , 172102 (2022)]

Demonstration of the normally off β -Ga₂O₃ MOSFET with high threshold voltage and high current density

Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al_0.6Ga_0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Comparative study of first-principles approaches for effective Coulomb interaction strength U_eff between localized f-electrons: Lanthanide metals as an example

Accurate thermochemistry of covalent and ionic solids from spin-component-scaled MP2

Low ohmic contact resistivity realized by in situ SiN_x insertion for high Al-composition-AlGaN/GaN heterostructure

Tunable broadband terahertz metamaterial absorber based on vanadium dioxide

Hysteresis-free and μs-switching of D/E-modes Ga₂O₃ hetero-junction FETs with the BV²/R_on,sp of 0.74/0.28 GW/cm²

Low density of interface trap states and temperature dependence study of Ga₂O₃ Schottky barrier diode with p-NiO_x termination

Spectral modulation of blocked-impurity-band hybrid structure terahertz detector

Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

Tight distance-dependent estimators for screening two-center and three-center short-range Coulomb integrals over Gaussian basis functions

Language-familiarity effect on voice recognition by blind listeners

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only