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Journal Articles

Preparation of degenerate n-type Al_xGa₁₋_xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition

Yuto Nishikawa, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka

Appl. Phys. Lett. 122, 232102 (2023)

https://doi.org/10.1063/5.0144418

Published: June 2023

View article titled, Preparation of degenerate n-type AlxGa1−xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition

Includes: Supplementary data

Journal Articles

Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering

Yuto Nishikawa, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka

Appl. Phys. Lett. 122, 082102 (2023)

https://doi.org/10.1063/5.0118126

Published: February 2023

View article titled, Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering

Journal Articles

Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K

Kohei Aoyama, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka

Appl. Phys. Lett. 121, 232103 (2022)

https://doi.org/10.1063/5.0123299

Published: December 2022

View article titled, Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K

Journal Articles

Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes

Taiga Fudetani, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka

Appl. Phys. Lett. 118, 072101 (2021)

https://doi.org/10.1063/5.0040500

Published: February 2021

View article titled, Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes

Journal Articles

Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics

Kohei Ueno, Keita Shibahara, Atsushi Kobayashi, Hiroshi Fujioka

Appl. Phys. Lett. 118, 022102 (2021)

https://doi.org/10.1063/5.0036093

Published: January 2021

View article titled, Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics

Journal Articles

Growth of InN ultrathin films on AlN for the application to field-effect transistors

Dayeon Jeong, Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka

AIP Advances 10, 125221 (2020)

https://doi.org/10.1063/5.0035203

Published: December 2020

View article titled, Growth of InN ultrathin films on AlN for the application to field-effect transistors

Journal Articles

Autonomous growth of NbN nanostructures on atomically flat AlN surfaces

Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka

Appl. Phys. Lett. 117, 231601 (2020)

https://doi.org/10.1063/5.0031604

Published: December 2020

View article titled, Autonomous growth of NbN nanostructures on atomically flat AlN surfaces

Includes: Supplementary data

Journal Articles

Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN

Bei Ma, Mingchuan Tang, Kohei Ueno, Atsushi Kobayashi, Ken Morita, Hiroshi Fujioka, Yoshihiro Ishitani

Appl. Phys. Lett. 117, 192103 (2020)

https://doi.org/10.1063/5.0023112

Published: November 2020

View article titled, Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN

Journal Articles

Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers

Masumi Sakamoto, Atsushi Kobayashi, Yoshino K. Fukai, Kohei Ueno, Yuki Tokumoto, Hiroshi Fujioka

J. Appl. Phys. 126, 075701 (2019)

https://doi.org/10.1063/1.5117307

Published: August 2019

View article titled, Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers

Journal Articles

Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering

Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka

AIP Advances 9, 075123 (2019)

https://doi.org/10.1063/1.5103185

Published: July 2019

View article titled, Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering

Journal Articles

Wide range doping controllability of p-type GaN films prepared via pulsed sputtering

Taiga Fudetani, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka

Appl. Phys. Lett. 114, 032102 (2019)

https://doi.org/10.1063/1.5079673

Published: January 2019

View article titled, Wide range doping controllability of p-type GaN films prepared via pulsed sputtering

Journal Articles

Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering

Yuya Sakurai, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hideto Miyake, Hiroshi Fujioka

APL Mater. 6, 111103 (2018)

https://doi.org/10.1063/1.5051555

Published: November 2018

View article titled, Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering

Journal Articles

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

Kohei Ueno, Taiga Fudetani, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka

APL Mater. 5, 126102 (2017)

https://doi.org/10.1063/1.5008913

Published: December 2017

View article titled, Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

Journal Articles

Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation

Jitsuo Ohta, Hiroshi Fujioka

APL Mater. 5, 076107 (2017)

https://doi.org/10.1063/1.4995652

Published: July 2017

View article titled, Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation

Journal Articles

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

Kohei Ueno, Eiji Kishikawa, Jitsuo Ohta, Hiroshi Fujioka

APL Mater. 5, 026102 (2017)

https://doi.org/10.1063/1.4975617

Published: February 2017

View article titled, N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

Journal Articles

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Yasuaki Arakawa, Kohei Ueno, Hideyuki Imabeppu, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka

Appl. Phys. Lett. 110, 042103 (2017)

https://doi.org/10.1063/1.4975056

Published: January 2017

View article titled, Electrical properties of Si-doped GaN prepared using pulsed sputtering

Journal Articles

High-current-density indium nitride ultrathin-film transistors on glass substrates

Takeki Itoh, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka

Appl. Phys. Lett. 109, 142104 (2016)

https://doi.org/10.1063/1.4964422

Published: October 2016

View article titled, High-current-density indium nitride ultrathin-film transistors on glass substrates

Journal Articles

Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal–insulator–semiconductor field-effect transistors

Atsushi Kobayashi, Khe Shin Lye, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka

J. Appl. Phys. 120, 085709 (2016)

https://doi.org/10.1063/1.4961876

Published: August 2016

View article titled, Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal–insulator–semiconductor field-effect transistors

Journal Articles

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

Yasuaki Arakawa, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka

APL Mater. 4, 086103 (2016)

https://doi.org/10.1063/1.4960485

Published: August 2016

View article titled, High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

Journal Articles

InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

Khe Shin Lye, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka

Appl. Phys. Lett. 109, 032106 (2016)

https://doi.org/10.1063/1.4959777

Published: July 2016

View article titled, InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

NARROW

Topics

Preparation of degenerate n-type Al_xGa₁₋_xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition

Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering

Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K

Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes

Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics

Growth of InN ultrathin films on AlN for the application to field-effect transistors

Autonomous growth of NbN nanostructures on atomically flat AlN surfaces

Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN

Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers

Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering

Wide range doping controllability of p-type GaN films prepared via pulsed sputtering

Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

Electrical properties of Si-doped GaN prepared using pulsed sputtering

High-current-density indium nitride ultrathin-film transistors on glass substrates

Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal–insulator–semiconductor field-effect transistors

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

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