Page 1 | Search Results | AIP Publishing

1-20 of 54

Sort by

Sort Order Select

Journal Articles

Evaluation of heating performance and its impact on surface transcription by rapid heating mold using thin electric heater

Takushi Saito, Hideki Hasegawa, Tatsuya Kawaguchi, Isao Satoh, Yutaka Shiraishi, Kei-Ichi Zouta

AIP Conf. Proc. 2065, 030005 (2019)

https://doi.org/10.1063/1.5088263

Published: February 2019

View article titled, Evaluation of heating performance and its impact on surface transcription by rapid heating mold using thin electric heater

Journal Articles

A numerical method of tracing a vortical axis along local topological axis line

Katsuyuki Nakayama, Hideki Hasegawa

AIP Conf. Proc. 1738, 480069 (2016)

https://doi.org/10.1063/1.4952305

Published: June 2016

View article titled, A numerical method of tracing a vortical axis along local topological axis line

Journal Articles

Capacitance-voltage and photoluminescence study of high- k ∕ Ga As interfaces controlled by Si interface control layer

Masamichi Akazawa, Alina Domanowska, Boguslawa Adamowicz, Hideki Hasegawa

J. Vac. Sci. Technol. B 27, 2028–2035 (2009)

https://doi.org/10.1116/1.3167361

Published: July 2009

View article titled, Capacitance-voltage and photoluminescence study of high- k ∕ Ga As interfaces controlled by Si interface control layer

Journal Articles

Current collapse transient behavior and its mechanism in submicron-gate Al Ga N ∕ Ga N heterostructure transistors

Hideki Hasegawa, Masamichi Akazawa

J. Vac. Sci. Technol. B 27, 2048–2054 (2009)

https://doi.org/10.1116/1.3139882

Published: July 2009

View article titled, Current collapse transient behavior and its mechanism in submicron-gate Al Ga N ∕ Ga N heterostructure transistors

Journal Articles

Analysis of Interactions between Drifting Plasma Waves in 2DEG Semiconductors and Electromagnetic Space Harmonic Waves using Three‐Dimensional Transverse Magnetic Mode Method

Abdul Manaf Hashim, Zon Fazlila Mohd Ahir, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa

AIP Conf. Proc. 1150, 311–323 (2009)

https://doi.org/10.1063/1.3192260

Published: July 2009

View article titled, Analysis of Interactions between Drifting Plasma Waves in 2DEG Semiconductors and Electromagnetic Space Harmonic Waves using Three‐Dimensional Transverse Magnetic Mode Method

Journal Articles

Odd Harmonic Responses in Two‐Dimensional AlGaAs/GaAs HEMT Devices Due to Plasma Wave Interaction

Abdul Manaf Hashim, Zon Fazlila Mohd Ahir, Seiya Kasai, Hideki Hasegawa

AIP Conf. Proc. 1150, 328–335 (2009)

https://doi.org/10.1063/1.3192262

Published: July 2009

View article titled, Odd Harmonic Responses in Two‐Dimensional AlGaAs/GaAs HEMT Devices Due to Plasma Wave Interaction

Journal Articles

New anodic native oxide of GaAs with improved dielectric and interface properties

Hideki Hasegawa, Kevin E. Forward, Hans L. Hartnagel

Appl. Phys. Lett. 26, 567–569 (1975)

https://doi.org/10.1063/1.87994

Published: September 2008

View article titled, New anodic native oxide of GaAs with improved dielectric and interface properties

Journal Articles

Steady state and transient behavior of currents in Al Ga N ∕ Ga N planar Schottky diodes and mechanism of current collapse

Hideki Hasegawa, Masamichi Akazawa

J. Vac. Sci. Technol. B 26, 1542–1550 (2008)

https://doi.org/10.1116/1.2929865

Published: August 2008

View article titled, Steady state and transient behavior of currents in Al Ga N ∕ Ga N planar Schottky diodes and mechanism of current collapse

Journal Articles

Admittance study of GaAs high- k metal-insulator-semiconductor capacitors with Si interface control layer

Masamichi Akazawa, Hideki Hasegawa

J. Vac. Sci. Technol. B 26, 1569–1578 (2008)

https://doi.org/10.1116/1.2952456

Published: August 2008

View article titled, Admittance study of GaAs high- k metal-insulator-semiconductor capacitors with Si interface control layer

Journal Articles

Anodic oxides on gallium phosphide for optoelectronic device and processing applications

Hideki Hasegawa, Takamasa Sakai

J. Appl. Phys. 49, 4459–4464 (1978)

https://doi.org/10.1063/1.325449

Published: August 2008

View article titled, Anodic oxides on gallium phosphide for optoelectronic device and processing applications

Journal Articles

Formation of ultrathin Si N x ∕ Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high- k dielectrics

Masamichi Akazawa, Hideki Hasegawa

J. Vac. Sci. Technol. B 25, 1481–1490 (2007)

https://doi.org/10.1116/1.2750344

Published: July 2007

View article titled, Formation of ultrathin Si N x ∕ Si interface control double layer on (001) and (111) GaAs surfaces for <em>ex situ</em> deposition of high- k dielectrics

Journal Articles

Hydrogen sensing characteristics and mechanism of Pd ∕ Al Ga N ∕ Ga N Schottky diodes subjected to oxygen gettering

Hideki Hasegawa, Masamichi Akazawa

J. Vac. Sci. Technol. B 25, 1495–1503 (2007)

https://doi.org/10.1116/1.2750343

Published: July 2007

View article titled, Hydrogen sensing characteristics and mechanism of Pd ∕ Al Ga N ∕ Ga N Schottky diodes subjected to oxygen gettering

Journal Articles

Design, Fabrication and Characterization of GaAs‐Based Interdigital‐Gated HEMT Devices for Solid‐State THz Wave Amplifiers

Abdul Manaf Hashim, Seiya Kasai, Kouichi Iizuka, Tamotsu Hashizume, Hideki Hasegawa

AIP Conf. Proc. 909, 180–185 (2007)

https://doi.org/10.1063/1.2739849

Published: May 2007

View article titled, Design, Fabrication and Characterization of GaAs‐Based Interdigital‐Gated HEMT Devices for Solid‐State THz Wave Amplifiers

Journal Articles

Selective molecular beam epitaxy growth of size- and position-controlled Ga N ∕ Al Ga N nanowires on nonplanar (0001) substrates and its growth mechanism

Taketomo Sato, Takeshi Oikawa, Hideki Hasegawa, Tamotsu Hashizume

J. Vac. Sci. Technol. B 24, 2087–2092 (2006)

https://doi.org/10.1116/1.2214700

Published: July 2006

View article titled, Selective molecular beam epitaxy growth of size- and position-controlled Ga N ∕ Al Ga N nanowires on nonplanar (0001) substrates and its growth mechanism

Journal Articles

Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

Junji Kotani, Masamitsu Kaneko, Hideki Hasegawa, Tamotsu Hashizume

J. Vac. Sci. Technol. B 24, 2148–2155 (2006)

https://doi.org/10.1116/1.2216722

Published: July 2006

View article titled, Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

Journal Articles

Liquid-phase sensors using open-gate Al Ga N ∕ Ga N high electron mobility transistor structure

Takuya Kokawa, Taketomo Sato, Hideki Hasegawa, Tamotsu Hashizume

J. Vac. Sci. Technol. B 24, 1972–1976 (2006)

https://doi.org/10.1116/1.2214701

Published: July 2006

View article titled, Liquid-phase sensors using open-gate Al Ga N ∕ Ga N high electron mobility transistor structure

Journal Articles

Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer

Rui Jia, Hideki Hasegawa, Naoko Shiozaki, Seiya Kasai

J. Vac. Sci. Technol. B 24, 2060–2068 (2006)

https://doi.org/10.1116/1.2216720

Published: July 2006

View article titled, Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer

Journal Articles

Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors

Junji Kotani, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa

J. Vac. Sci. Technol. B 23, 1799–1807 (2005)

https://doi.org/10.1116/1.1942507

Published: July 2005

View article titled, Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors

Journal Articles

Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates

Taketomo Sato, Isao Tamai, Hideki Hasegawa

J. Vac. Sci. Technol. B 23, 1706–1713 (2005)

https://doi.org/10.1116/1.1949222

Published: July 2005

View article titled, Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates

Journal Articles

Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy

Nanako Shiozaki, Taketomo Sato, Hideki Hasegawa

J. Vac. Sci. Technol. B 23, 1714–1721 (2005)

https://doi.org/10.1116/1.1943446

Published: July 2005

View article titled, Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy

NARROW

Topics

Evaluation of heating performance and its impact on surface transcription by rapid heating mold using thin electric heater

A numerical method of tracing a vortical axis along local topological axis line

Capacitance-voltage and photoluminescence study of high- k ∕ Ga As interfaces controlled by Si interface control layer

Current collapse transient behavior and its mechanism in submicron-gate Al Ga N ∕ Ga N heterostructure transistors

Analysis of Interactions between Drifting Plasma Waves in 2DEG Semiconductors and Electromagnetic Space Harmonic Waves using Three‐Dimensional Transverse Magnetic Mode Method

Odd Harmonic Responses in Two‐Dimensional AlGaAs/GaAs HEMT Devices Due to Plasma Wave Interaction

New anodic native oxide of GaAs with improved dielectric and interface properties

Steady state and transient behavior of currents in Al Ga N ∕ Ga N planar Schottky diodes and mechanism of current collapse

Admittance study of GaAs high- k metal-insulator-semiconductor capacitors with Si interface control layer

Anodic oxides on gallium phosphide for optoelectronic device and processing applications

Formation of ultrathin Si N x ∕ Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high- k dielectrics

Hydrogen sensing characteristics and mechanism of Pd ∕ Al Ga N ∕ Ga N Schottky diodes subjected to oxygen gettering

Design, Fabrication and Characterization of GaAs‐Based Interdigital‐Gated HEMT Devices for Solid‐State THz Wave Amplifiers

Selective molecular beam epitaxy growth of size- and position-controlled Ga N ∕ Al Ga N nanowires on nonplanar (0001) substrates and its growth mechanism

Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

Liquid-phase sensors using open-gate Al Ga N ∕ Ga N high electron mobility transistor structure

Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer

Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors

Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates

Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only