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Journal Articles

Germanium out diffusion in SiGe-based HfO2 gate stacks

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Eugenie Martinez, Emmanuel Nolot, Jean-Paul Barnes, Yann Mazel, Nicolas Bernier, Raja Muthinti, Hemanth Jagannathan, Choonghyun Lee, Narciso Gambacorti
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 042902 (2018)
https://doi.org/10.1116/1.5027072
Published: July 2018
View articletitled, Germanium out diffusion in SiGe-based HfO2 gate stacks
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Journal Articles

Quantification of local strain distributions in nanoscale strained SiGe FinFET structures

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Shogo Mochizuki, Conal E. Murray, Anita Madan, Teresa Pinto, Yun-Yu Wang, Juntao Li, Weihao Weng, Hemanth Jagannathan, Yasuhiko Imai, Shigeru Kimura, Shotaro Takeuchi, Akira Sakai
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 135705 (2017)
https://doi.org/10.1063/1.4991472
Published: October 2017
View articletitled, Quantification of local strain distributions in nanoscale strained SiGe FinFET structures
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Journal Articles

High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction

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David Cooper, Nicolas Bernier, Jean-Luc Rouvière, Yun-Yu Wang, Weihao Weng, Anita Madan, Shogo Mochizuki, Hemanth Jagannathan
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 223109 (2017)
https://doi.org/10.1063/1.4983124
Published: June 2017
View articletitled, High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction
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Journal Articles

Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices

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Shogo Mochizuki, Rainer Loesing, Yun-Yu Wang, Hemanth Jagannathan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 021208 (2017)
https://doi.org/10.1116/1.4975923
Published: February 2017
View articletitled, Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices
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Journal Articles

Measurement of oxygen diffusion in nanometer scale HfO 2 gate dielectric films

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Sufi Zafar, Hemanth Jagannathan, Lisa F. Edge, Devendra Gupta
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 152903 (2011)
https://doi.org/10.1063/1.3579256
Published: April 2011
View articletitled, Measurement of oxygen diffusion in nanometer scale HfO 2 gate dielectric films
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Journal Articles

Templated germanium nanowire synthesis using oriented mesoporous organosilicate thin films

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Hemanth Jagannathan, Michael Deal, Yoshio Nishi, Ho-Cheol Kim, Erik M. Freer, Linnea Sundstrom, Teya Topuria, Philip M. Rice
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 2220–2224 (2006)
https://doi.org/10.1116/1.2244543
Published: September 2006
View articletitled, Templated germanium nanowire synthesis using oriented mesoporous organosilicate thin films
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Journal Articles

Nature of germanium nanowire heteroepitaxy on silicon substrates

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Hemanth Jagannathan, Michael Deal, Yoshio Nishi, Jacob Woodruff, Christopher Chidsey, Paul C. McIntyre
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 024318 (2006)
https://doi.org/10.1063/1.2219007
Published: July 2006
View articletitled, Nature of germanium nanowire heteroepitaxy on silicon substrates
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Journal Articles

Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires

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Hemanth Jagannathan, Yoshio Nishi, Mark Reuter, Matthew Copel, Emanuel Tutuc, Supratik Guha, Rafael P. Pezzi
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 103113 (2006)
https://doi.org/10.1063/1.2179370
Published: March 2006
View articletitled, Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires
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