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Heiji Watanabe
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Journal Articles

Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing

Tae-Hyeon Kil, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe
Journal: AIP Advances
AIP Advances 13, 115304 (2023)
https://doi.org/10.1063/5.0169573
Published: November 2023
View article titled, Design of SiO<sub>2</sub>/4H–SiC MOS interfaces by sputter deposition of SiO<sub>2</sub> followed by high-temperature CO<sub>2</sub>-post deposition annealing
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Journal Articles

Oxygen-vacancy defect in 4H-SiC as a near-infrared emitter: An ab initio study

Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 145701 (2023)
https://doi.org/10.1063/5.0169147
Published: October 2023
View article titled, Oxygen-vacancy defect in 4H-SiC as a near-infrared emitter: An <em>ab initio</em> study
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Journal Articles

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 102102 (2023)
https://doi.org/10.1063/5.0166745
Published: September 2023
View article titled, Control on the density and optical properties of color centers at SiO<sub>2</sub>/SiC interfaces by oxidation and annealing
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Includes: Supplementary data
Journal Articles

Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Shingo Ogawa, Hidetoshi Mizobata, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 095704 (2023)
https://doi.org/10.1063/5.0165894
Published: September 2023
View article titled, Interface and oxide trap states of SiO<sub>2</sub>/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy
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Journal Articles

Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯ ) substrates

Hidetoshi Mizobata, Kazuki Tomigahara, Mikito Nozaki, Takuma Kobayashi, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 062104 (2022)
https://doi.org/10.1063/5.0095468
Published: August 2022
View article titled, Electrical properties and energy band alignment of SiO<sub>2</sub>/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯ ) substrates
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Journal Articles

Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

Yuhei Wada, Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takuji Hosoi, Tetsu Kachi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 082103 (2022)
https://doi.org/10.1063/5.0081198
Published: February 2022
View article titled, Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing
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Journal Articles

Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy

Hidetoshi Nakanishi, Tatsuhiko Nishimura, Iwao Kawayama, Masayoshi Tonouchi, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 115305 (2021)
https://doi.org/10.1063/5.0058962
Published: September 2021
View article titled, Probing the surface potential of SiO<sub>2</sub>/4H-SiC(0001) by terahertz emission spectroscopy
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Journal Articles

Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams

Akira Uedono, Wataru Ueno, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Heiji Watanabe
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 054503 (2020)
https://doi.org/10.1063/1.5134513
Published: February 2020
View article titled, Voids and vacancy-type defects in SiO<sub>2</sub>/GaN structures probed by monoenergetic positron beams
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Journal Articles

Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

Mitsuru Sometani, Takuji Hosoi, Hirohisa Hirai, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takayoshi Shimura, Heiji Watanabe, Yoshiyuki Yonezawa, Hajime Okumura
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 132102 (2019)
https://doi.org/10.1063/1.5115304
Published: September 2019
View article titled, Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations
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Journal Articles

Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

Eigo Fujita, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: AIP Advances
AIP Advances 8, 085305 (2018)
https://doi.org/10.1063/1.5034048
Published: August 2018
View article titled, Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements
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Journal Articles

Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams

Akira Uedono, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 182103 (2018)
https://doi.org/10.1063/1.5027257
Published: May 2018
View article titled, Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams
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Journal Articles

Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures

Kenta Watanabe, Mikito Nozaki, Takahiro Yamada, Satoshi Nakazawa, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 042102 (2017)
https://doi.org/10.1063/1.4986419
Published: July 2017
View article titled, Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures
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Journal Articles

Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

Takahiro Yamada, Joyo Ito, Ryohei Asahara, Kenta Watanabe, Mikito Nozaki, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 261603 (2017)
https://doi.org/10.1063/1.4990689
Published: June 2017
View article titled, Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers
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Journal Articles

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Takahiro Yamada, Joyo Ito, Ryohei Asahara, Kenta Watanabe, Mikito Nozaki, Satoshi Nakazawa, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 035303 (2017)
https://doi.org/10.1063/1.4974458
Published: January 2017
View article titled, Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient
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Journal Articles

Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization

Hiroshi Oka, Takashi Amamoto, Masahiro Koyama, Yasuhiko Imai, Shigeru Kimura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 032104 (2017)
https://doi.org/10.1063/1.4974473
Published: January 2017
View article titled, Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization
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Journal Articles

Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

Takuji Hosoi, Daisuke Nagai, Mitsuru Sometani, Yoshihito Katsu, Hironori Takeda, Takayoshi Shimura, Manabu Takei, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 182114 (2016)
https://doi.org/10.1063/1.4967002
Published: November 2016
View article titled, Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO<sub>2</sub>/SiC interface properties
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Journal Articles

Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

Daichi Mori, Hiroshi Oka, Takuji Hosoi, Kentaro Kawai, Mizuho Morita, Ethan J. Crumlin, Zhi Liu, Heiji Watanabe, Kenta Arima
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 095306 (2016)
https://doi.org/10.1063/1.4962202
Published: September 2016
View article titled, Comparative study of GeO<sub>2</sub>/Ge and SiO<sub>2</sub>/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy
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Journal Articles

Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack

Takuji Hosoi, Yuya Minoura, Ryohei Asahara, Hiroshi Oka, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 252104 (2015)
https://doi.org/10.1063/1.4938397
Published: December 2015
View article titled, Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-<em>k</em> gate stack
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Journal Articles

Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

Shingo Ogawa, Ryohei Asahara, Yuya Minoura, Hideki Sako, Naohiko Kawasaki, Ichiko Yamada, Takashi Miyamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 235704 (2015)
https://doi.org/10.1063/1.4937573
Published: December 2015
View article titled, Insights into thermal diffusion of germanium and oxygen atoms in HfO<sub>2</sub>/GeO<sub>2</sub>/Ge gate stacks and their suppressed reaction with atomically thin AlO<sub>x</sub> interlayers
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Journal Articles

Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy

Takayoshi Shimura, Masahiro Matsue, Kohei Tominaga, Keiko Kajimura, Takashi Amamoto, Takuji Hosoi, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 221109 (2015)
https://doi.org/10.1063/1.4936992
Published: December 2015
View article titled, Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy
Open the PDF for Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy in another window
Includes: Supplementary data