Page 1 | Search Results | AIP Publishing

1-19 of 19

Sort by

Sort Order Select

Journal Articles

Probing electronic and dielectric properties of ultrathin Ga₂O₃/Al₂O₃ atomic layer stacks made with in vacuo atomic layer deposition

Aafiya, Angelo Marshall, Berg Dodson, Ryan Goul, Sierra Seacat, Hartwin Peelaers, Kevin Bray, Dan Ewing, Michael Walsh, Judy Z. Wu

J. Appl. Phys. 136, 025104 (2024)

https://doi.org/10.1063/5.0208590

Published: July 2024

View articletitled, Probing electronic and dielectric properties of ultrathin Ga2O3/Al2O3 atomic layer stacks made with in vacuo atomic layer deposition

Journal Articles

Achieving n-type doped monoclinic ( In x Al 1 - x ) 2 O 3 alloys

Sierra Seacat, Hartwin Peelaers

J. Appl. Phys. 135, 235705 (2024)

https://doi.org/10.1063/5.0211069

Published: June 2024

View articletitled, Achieving n-type doped monoclinic ( In x Al 1 - x ) 2 O 3 alloys

Journal Articles

Identification and characterization of deep nitrogen acceptors in β-Ga₂O₃ using defect spectroscopies

Hemant Ghadi, Joe F. McGlone, Evan Cornuelle, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Ymir Kalmann Frodason, Hartwin Peelaers, John L. Lyons, Joel B. Varley, Chris G. Van de Walle, Aaron Arehart, Steven A. Ringel

APL Mater. 11, 111110 (2023)

https://doi.org/10.1063/5.0160541

Published: November 2023

View articletitled, Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

Journal Articles

Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride

Michael Tripepi, Simin Zhang, Brandon Harris, Noah Talisa, Jae-Hyuck Yoo, Hartwin Peelaers, Selim Elhadj, Enam Chowdhury

APL Mater. 10, 071107 (2022)

https://doi.org/10.1063/5.0083664

Published: July 2022

View articletitled, Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride

Journal Articles

Mg doping and diffusion in (010) β-Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy

Akhil Mauze, Yuewei Zhang, Takeki Itoh, Thomas E. Mates, Hartwin Peelaers, Chris G. Van de Walle, James S. Speck

J. Appl. Phys. 130, 235301 (2021)

https://doi.org/10.1063/5.0072611

Published: December 2021

View articletitled, Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

Journal Articles

Properties of orthorhombic Ga₂O₃ alloyed with In₂O₃ and Al₂O₃

Sierra Seacat, John L. Lyons, Hartwin Peelaers

Appl. Phys. Lett. 119, 042104 (2021)

https://doi.org/10.1063/5.0060801

Published: July 2021

View articletitled, Properties of orthorhombic Ga2O3 alloyed with In2O3 and Al2O3

Journal Articles

Erratum: “Structural and electronic properties of Ga₂O₃-Al₂O₃ alloys” [Appl. Phys. Lett. 112 , 242101 (2018)]

Hartwin Peelaers, Joel B. Varley, James S. Speck, Chris G. Van de Walle

Appl. Phys. Lett. 118, 259901 (2021)

https://doi.org/10.1063/5.0059239

Published: June 2021

View articletitled, Erratum: “Structural and electronic properties of Ga2O3-Al2O3 alloys” [Appl. Phys. Lett. 112 , 242101 (2018)]

Journal Articles

Ultrafast hole transfer from monolayer ReS₂ to thin-film F₈ZnPc

Pavel Valencia-Acuna, Tika R. Kafle, Peymon Zereshki, Hartwin Peelaers, Wai-Lun Chan, Hui Zhao

Appl. Phys. Lett. 118, 153104 (2021)

https://doi.org/10.1063/5.0045710

Published: April 2021

View articletitled, Ultrafast hole transfer from monolayer ReS2 to thin-film F8ZnPc

Journal Articles

First-principles surface energies for monoclinic Ga₂O₃ and Al₂O₃ and consequences for cracking of (Al_xGa_1−x)₂O₃

Sai Mu, Mengen Wang, Hartwin Peelaers, Chris G. Van de Walle

APL Mater. 8, 091105 (2020)

https://doi.org/10.1063/5.0019915

Published: September 2020

View articletitled, First-principles surface energies for monoclinic Ga2O3 and Al2O3 and consequences for cracking of (AlxGa1−x)2O3

Includes: Supplementary data

Journal Articles

Intra- and inter-conduction band optical absorption processes in β -Ga₂O₃

Arjan Singh, Okan Koksal, Nicholas Tanen, Jonathan McCandless, Debdeep Jena, Huili (Grace) Xing, Hartwin Peelaers, Farhan Rana

Appl. Phys. Lett. 117, 072103 (2020)

https://doi.org/10.1063/5.0016341

Published: August 2020

View articletitled, Intra- and inter-conduction band optical absorption processes in β -Ga2O3

Journal Articles

Orthorhombic alloys of Ga 2 O 3 and Al 2 O 3

Sierra Seacat, John L. Lyons, Hartwin Peelaers

Appl. Phys. Lett. 116, 232102 (2020)

https://doi.org/10.1063/5.0010354

Published: June 2020

View articletitled, Orthorhombic alloys of Ga 2 O 3 and Al 2 O 3

Journal Articles

Ab initio study of enhanced thermal conductivity in ordered AlGaO₃ alloys

Sai Mu, Hartwin Peelaers, Chris G. Van de Walle

Appl. Phys. Lett. 115, 242103 (2019)

https://doi.org/10.1063/1.5131755

Published: December 2019

View articletitled, Ab initio study of enhanced thermal conductivity in ordered AlGaO3 alloys

Includes: Supplementary data

Journal Articles

Erratum: “Structural and electronic properties of Ga₂O₃-Al₂O₃ alloys” [Appl. Phys. Lett. 112 , 242101 (2018)]

Hartwin Peelaers, Joel B. Varley, James S. Speck, Chris G. Van de Walle

Appl. Phys. Lett. 115, 159901 (2019)

https://doi.org/10.1063/1.5127763

Published: October 2019

View articletitled, Erratum: “Structural and electronic properties of Ga2O3-Al2O3 alloys” [Appl. Phys. Lett. 112 , 242101 (2018)]

Journal Articles

Deep acceptors and their diffusion in Ga₂O₃

Hartwin Peelaers, John L. Lyons, Joel B. Varley, Chris G. Van de Walle

APL Mater. 7, 022519 (2019)

https://doi.org/10.1063/1.5063807

Published: January 2019

View articletitled, Deep acceptors and their diffusion in Ga2O3

Journal Articles

Structural and electronic properties of Ga₂O₃-Al₂O₃ alloys

Hartwin Peelaers, Joel B. Varley, James S. Speck, Chris G. Van de Walle

Appl. Phys. Lett. 112, 242101 (2018)

https://doi.org/10.1063/1.5036991

Published: June 2018

View articletitled, Structural and electronic properties of Ga2O3-Al2O3 alloys

Includes: Supplementary data

Journal Articles

First-principles study of direct and indirect optical absorption in BaSnO₃

Youngho Kang, Hartwin Peelaers, Karthik Krishnaswamy, Chris G. Van de Walle

Appl. Phys. Lett. 112, 062106 (2018)

https://doi.org/10.1063/1.5013641

Published: February 2018

View articletitled, First-principles study of direct and indirect optical absorption in BaSnO3

Journal Articles

Sub-band-gap absorption in Ga₂O₃

Hartwin Peelaers, Chris G. Van de Walle

Appl. Phys. Lett. 111, 182104 (2017)

https://doi.org/10.1063/1.5001323

Published: November 2017

View articletitled, Sub-band-gap absorption in Ga2O3

Journal Articles

Publisher's Note: “High-voltage field effect transistors with wide-bandgap β-Ga₂O₃ nanomembranes” [Appl. Phys. Lett. 104, 203111 (2014)]

Wan Sik Hwang, Amit Verma, Hartwin Peelaers, Vladimir Protasenko, Sergei Rouvimov, Huili (Grace) Xing, Alan Seabaugh, Wilfried Haensch, Chris Van de Walle, Zbigniew Galazka, Martin Albrecht, Roberto Fornari, Debdeep Jena

Appl. Phys. Lett. 104, 249902 (2014)

https://doi.org/10.1063/1.4884096

Published: June 2014

View articletitled, Publisher's Note: “High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes” [Appl. Phys. Lett. 104, 203111 (2014)]

Journal Articles

High-voltage field effect transistors with wide-bandgap β-Ga₂O₃ nanomembranes

Appl. Phys. Lett. 104, 203111 (2014)

https://doi.org/10.1063/1.4879800

Published: May 2014

View articletitled, High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

Update search

NARROW

Format

Collections

Topics

Subjects

Journal

Article Type

Issue Section

Date

Availability

Probing electronic and dielectric properties of ultrathin Ga₂O₃/Al₂O₃ atomic layer stacks made with in vacuo atomic layer deposition

Achieving n-type doped monoclinic ( In x Al 1 - x ) 2 O 3 alloys

Identification and characterization of deep nitrogen acceptors in β-Ga₂O₃ using defect spectroscopies

Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride

Mg doping and diffusion in (010) β-Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy

Properties of orthorhombic Ga₂O₃ alloyed with In₂O₃ and Al₂O₃

Erratum: “Structural and electronic properties of Ga₂O₃-Al₂O₃ alloys” [Appl. Phys. Lett. 112 , 242101 (2018)]

Ultrafast hole transfer from monolayer ReS₂ to thin-film F₈ZnPc

First-principles surface energies for monoclinic Ga₂O₃ and Al₂O₃ and consequences for cracking of (Al_xGa_1−x)₂O₃

Intra- and inter-conduction band optical absorption processes in β -Ga₂O₃

Orthorhombic alloys of Ga 2 O 3 and Al 2 O 3

Ab initio study of enhanced thermal conductivity in ordered AlGaO₃ alloys

Erratum: “Structural and electronic properties of Ga₂O₃-Al₂O₃ alloys” [Appl. Phys. Lett. 112 , 242101 (2018)]

Deep acceptors and their diffusion in Ga₂O₃

Structural and electronic properties of Ga₂O₃-Al₂O₃ alloys

First-principles study of direct and indirect optical absorption in BaSnO₃

Sub-band-gap absorption in Ga₂O₃

Publisher's Note: “High-voltage field effect transistors with wide-bandgap β-Ga₂O₃ nanomembranes” [Appl. Phys. Lett. 104, 203111 (2014)]

High-voltage field effect transistors with wide-bandgap β-Ga₂O₃ nanomembranes

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Update search

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only