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Journal Articles

Surface properties of MOCVD grown (Al_1−xGa_x)₂O₃ thin films on c-plane sapphire via scanning Kelvin probe microscopy

Mohi Uddin Jewel, Scott R. Crittenden, Tahir Hassan, Samiul Hasan, Dongkyu Lee, Nifat Jahan Nipa, Md. Ghulam Zakir, Mohammad Jamal El Loubani, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç, Iftikhar Ahmad

AIP Advances 14, 125029 (2024)

https://doi.org/10.1063/5.0233458

Published: December 2024

View article titled, Surface properties of MOCVD grown (Al1−xGax)2O3 thin films on c-plane sapphire via scanning Kelvin probe microscopy

Journal Articles

Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure

Samiul Hasan, Mohi Uddin Jewel, Scott R. Crittenden, Md Ghulam Zakir, Nifat Jahan Nipa, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç, Iftikhar Ahmad

Appl. Phys. Lett. 124, 112103 (2024)

https://doi.org/10.1063/5.0193603

Published: March 2024

View article titled, Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure

Journal Articles

Comparative study of BeMgZnO/ZnO heterostructures on c-sapphire and GaN by molecular beam epitaxy

Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç

J. Vac. Sci. Technol. A 38, 023408 (2020)

https://doi.org/10.1116/1.5145206

Published: February 2020

View article titled, Comparative study of BeMgZnO/ZnO heterostructures on c-sapphire and GaN by molecular beam epitaxy

Journal Articles

Improvement of optical quality of semipolar ( 11 2 ¯ 2 ) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth

Morteza Monavarian, Natalia Izyumskaya, Marcus Müller, Sebastian Metzner, Peter Veit, Nuri Can, Saikat Das, Ümit Özgür, Frank Bertram, Jürgen Christen, Hadis Morkoç, Vitaliy Avrutin

J. Appl. Phys. 119, 145303 (2016)

https://doi.org/10.1063/1.4945770

Published: April 2016

View article titled, Improvement of optical quality of semipolar ( 11 2 ¯ 2 ) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth

Journal Articles

Determination of carrier diffusion length in GaN

Shopan Hafiz, Fan Zhang, Morteza Monavarian, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür, Sebastian Metzner, Frank Bertram, Jürgen Christen, Bernard Gil

J. Appl. Phys. 117, 013106 (2015)

https://doi.org/10.1063/1.4905506

Published: January 2015

View article titled, Determination of carrier diffusion length in GaN

Journal Articles

InGaN light-emitting diodes: Efficiency-limiting processes at high injection

Vitaliy Avrutin, Shopan din Ahmad Hafiz, Fan Zhang, Ümit Özgür, Hadis Morkoç, Arvidas Matulionis

J. Vac. Sci. Technol. A 31, 050809 (2013)

https://doi.org/10.1116/1.4810789

Published: June 2013

View article titled, InGaN light-emitting diodes: Efficiency-limiting processes at high injection

Journal Articles

Enhanced microwave dielectric tunability of Ba_0.5Sr_0.5TiO₃ thin films grown with reduced strain on DyScO₃ substrates by three-step technique

Hongrui Liu, Vitaliy Avrutin, Congyong Zhu, Ümit Özgür, Juan Yang, Changzhi Lu, Hadis Morkoç

J. Appl. Phys. 113, 044108 (2013)

https://doi.org/10.1063/1.4789008

Published: January 2013

View article titled, Enhanced microwave dielectric tunability of Ba0.5Sr0.5TiO3 thin films grown with reduced strain on DyScO3 substrates by three-step technique

Journal Articles

Carrier dynamics in bulk GaN

Patrik Šcˇajev, Kęstutis Jarašiūnas, Serdal Okur, Ümit Özgür, Hadis Morkoç

J. Appl. Phys. 111, 023702 (2012)

https://doi.org/10.1063/1.3673851

Published: January 2012

View article titled, Carrier dynamics in bulk GaN

Journal Articles

Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique

Cemil Kayis, C. Y. Zhu, Mo Wu, X. Li, Ümit Özgür, Hadis Morkoç

J. Appl. Phys. 109, 084522 (2011)

https://doi.org/10.1063/1.3576104

Published: April 2011

View article titled, Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique

Journal Articles

Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

Lin Zhou, Jacob H. Leach, Xianfeng Ni, Hadis Morkoç, David J. Smith

J. Appl. Phys. 107, 014508 (2010)

https://doi.org/10.1063/1.3275241

Published: January 2010

View article titled, Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

Journal Articles

Epitaxial growth of (001)-oriented Ba 0.5 Sr 0.5 TiO 3 thin films on a -plane sapphire with an MgO/ZnO bridge layer

Bo Xiao, Hongrui Liu, Vitaliy Avrutin, Jacob H. Leach, Emmanuel Rowe, Huiyong Liu, Ümit Özgür, Hadis Morkoç, W. Chang, L. M. B. Alldredge, S. W. Kirchoefer, J. M. Pond

Appl. Phys. Lett. 95, 212901 (2009)

https://doi.org/10.1063/1.3266862

Published: November 2009

View article titled, Epitaxial growth of (001)-oriented Ba 0.5 Sr 0.5 TiO 3 thin films on a -plane sapphire with an MgO/ZnO bridge layer

Journal Articles

Effect of large strain on dielectric and ferroelectric properties of Ba 0.5 Sr 0.5 TiO 3 thin films

Bo Xiao, Vitaliy Avrutin, Hongrui Liu, Emmanuel Rowe, Jacob Leach, Xing Gu, Ümit Özgür, Hadis Morkoç, W. Chang, L. M. B. Alldredge, S. W. Kirchoefer, J. M. Pond

Appl. Phys. Lett. 95, 012907 (2009)

https://doi.org/10.1063/1.3151961

Published: July 2009

View article titled, Effect of large strain on dielectric and ferroelectric properties of Ba 0.5 Sr 0.5 TiO 3 thin films

Journal Articles

Large electro-optic effect in single-crystal Pb ( Zr , Ti ) O 3 (001) measured by spectroscopic ellipsometry

Tae Dong Kang, Bo Xiao, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç, Jun Woo Park, Ho Suk Lee, Hosun Lee, Xiaoyu Wang, David. J. Smith

J. Appl. Phys. 104, 093103 (2008)

https://doi.org/10.1063/1.3009655

Published: November 2008

View article titled, Large electro-optic effect in single-crystal Pb ( Zr , Ti ) O 3 (001) measured by spectroscopic ellipsometry

Journal Articles

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Xianfeng Ni, Qian Fan, Ryoko Shimada, Ümit Özgür, Hadis Morkoç

Appl. Phys. Lett. 93, 171113 (2008)

https://doi.org/10.1063/1.3012388

Published: October 2008

View article titled, Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Journal Articles

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p -doped quantum well barriers

Jinqiao Xie, Xianfeng Ni, Qian Fan, Ryoko Shimada, Ümit Özgür, Hadis Morkoç

Appl. Phys. Lett. 93, 121107 (2008)

https://doi.org/10.1063/1.2988324

Published: September 2008

View article titled, On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p -doped quantum well barriers

Journal Articles

Large pyroelectric effect in undoped epitaxial Pb ( Zr , Ti ) O 3 thin films on SrTiO 3 substrates

Bo Xiao, Vitaliy Avrutin, Huiyong Liu, Ümit Özgür, Hadis Morkoç, Changzhi Lu

Appl. Phys. Lett. 93, 052913 (2008)

https://doi.org/10.1063/1.2969778

Published: August 2008

View article titled, Large pyroelectric effect in undoped epitaxial Pb ( Zr , Ti ) O 3 thin films on SrTiO 3 substrates

Journal Articles

Structural and electrical properties of Pb ( Zr , Ti ) O 3 grown on (0001) GaN using a double Pb Ti O 3 ∕ Pb O bridge layer

Bo Xiao, Xing Gu, Natalia Izyumskaya, Vitaliy Avrutin, Jinqiao Xie, Huiyong Liu, Hadis Morkoç

Appl. Phys. Lett. 91, 182908 (2007)

https://doi.org/10.1063/1.2805220

Published: October 2007

View article titled, Structural and electrical properties of Pb ( Zr , Ti ) O 3 grown on (0001) GaN using a double Pb Ti O 3 ∕ Pb O bridge layer

Journal Articles

High electron mobility in nearly lattice-matched Al In N ∕ Al N ∕ Ga N heterostructure field effect transistors

Jinqiao Xie, Xianfeng Ni, Mo Wu, Jacob H. Leach, Ümit Özgür, Hadis Morkoç

Appl. Phys. Lett. 91, 132116 (2007)

https://doi.org/10.1063/1.2794419

Published: September 2007

View article titled, High electron mobility in nearly lattice-matched Al In N ∕ Al N ∕ Ga N heterostructure field effect transistors

Journal Articles

Quantum 1/f Noise, a New Aspect of Quantum Physics in Hi‐Tech Devices, Sensors, Nanostructures and Systems

Peter H. Handel, Amanda M. Truong, Thomas F. George, Hadis Morkoç

AIP Conf. Proc. 922, 425–430 (2007)

https://doi.org/10.1063/1.2759713

Published: July 2007

View article titled, Quantum 1/f Noise, a New Aspect of Quantum Physics in Hi‐Tech Devices, Sensors, Nanostructures and Systems

Journal Articles

Epitaxial growth of Zr O 2 on GaN templates by oxide molecular beam epitaxy

Xing Gu, Natalia Izyumskaya, Vitaly Avrutin, Bo Xiao, Hadis Morkoç

Appl. Phys. Lett. 91, 022916 (2007)

https://doi.org/10.1063/1.2753719

Published: July 2007

View article titled, Epitaxial growth of Zr O 2 on GaN templates by oxide molecular beam epitaxy

NARROW

Topics

Surface properties of MOCVD grown (Al_1−xGa_x)₂O₃ thin films on c-plane sapphire via scanning Kelvin probe microscopy

Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure

Comparative study of BeMgZnO/ZnO heterostructures on c-sapphire and GaN by molecular beam epitaxy

Improvement of optical quality of semipolar ( 11 2 ¯ 2 ) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth

Determination of carrier diffusion length in GaN

InGaN light-emitting diodes: Efficiency-limiting processes at high injection

Enhanced microwave dielectric tunability of Ba_0.5Sr_0.5TiO₃ thin films grown with reduced strain on DyScO₃ substrates by three-step technique

Carrier dynamics in bulk GaN

Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique

Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

Epitaxial growth of (001)-oriented Ba 0.5 Sr 0.5 TiO 3 thin films on a -plane sapphire with an MgO/ZnO bridge layer

Effect of large strain on dielectric and ferroelectric properties of Ba 0.5 Sr 0.5 TiO 3 thin films

Large electro-optic effect in single-crystal Pb ( Zr , Ti ) O 3 (001) measured by spectroscopic ellipsometry

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p -doped quantum well barriers

Large pyroelectric effect in undoped epitaxial Pb ( Zr , Ti ) O 3 thin films on SrTiO 3 substrates

Structural and electrical properties of Pb ( Zr , Ti ) O 3 grown on (0001) GaN using a double Pb Ti O 3 ∕ Pb O bridge layer

High electron mobility in nearly lattice-matched Al In N ∕ Al N ∕ Ga N heterostructure field effect transistors

Quantum 1/f Noise, a New Aspect of Quantum Physics in Hi‐Tech Devices, Sensors, Nanostructures and Systems

Epitaxial growth of Zr O 2 on GaN templates by oxide molecular beam epitaxy

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