1-20 of 53
H. von Känel
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Effective g factor of 2D holes in strained Ge quantum wells

I. L. Drichko, A. A. Dmitriev, V. A. Malysh, I. Yu. Smirnov, H. von Känel, M. Kummer, D. Chrastina, G. Isella
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 165703 (2018)
https://doi.org/10.1063/1.5025413
Published: April 2018
View article titled, Effective g factor of 2D holes in strained Ge quantum wells
Open the PDF for Effective g factor of 2D holes in strained Ge quantum wells in another window
Journal Articles

Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding

A. Jung, Y. Zhang, Y. Arroyo Rojas Dasilva, F. Isa, H. von Känel
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 085701 (2018)
https://doi.org/10.1063/1.5020139
Published: February 2018
View article titled, Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding
Open the PDF for Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding in another window
Journal Articles

Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)

V. Schlykow, W. M. Klesse, G. Niu, N. Taoka, Y. Yamamoto, O. Skibitzki, M. R. Barget, P. Zaumseil, H. von Känel, M. A. Schubert, G. Capellini, T. Schroeder
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 202102 (2016)
https://doi.org/10.1063/1.4967500
Published: November 2016
View article titled, Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)
Open the PDF for Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001) in another window
Journal Articles

Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking

F. Isa, M. Salvalaglio, Y. Arroyo Rojas Dasilva, A. Jung, G. Isella, R. Erni, B. Timotijevic, P. Niedermann, P. Gröning, F. Montalenti, H. von Känel
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 182112 (2016)
https://doi.org/10.1063/1.4966948
Published: November 2016
View article titled, Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking
Open the PDF for Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking in another window
Journal Articles

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

A. G. Taboada, M. Meduňa, M. Salvalaglio, F. Isa, T. Kreiliger, C. V. Falub, E. Barthazy Meier, E. Müller, L. Miglio, G. Isella, H. von Känel
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 055301 (2016)
https://doi.org/10.1063/1.4940379
Published: February 2016
View article titled, GaAs/Ge crystals grown on Si substrates patterned down to the micron scale
Open the PDF for GaAs/Ge crystals grown on Si substrates patterned down to the micron scale in another window
Journal Articles

Analysis of edge threading dislocations b → = 1 2 〈 110 〉 in three dimensional Ge crystals grown on (001)-Si substrates

Y. Arroyo Rojas Dasilva, M. D. Rossell, D. Keller, P. Gröning, F. Isa, T. Kreiliger, H. von Känel, G. Isella, R. Erni
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 093501 (2015)
https://doi.org/10.1063/1.4929422
Published: August 2015
View article titled, Analysis of edge threading dislocations b → = 1 2 〈 110 〉 in three dimensional Ge crystals grown on (001)-Si substrates
Open the PDF for Analysis of edge threading dislocations b → = 1 2 〈 110 〉 in three dimensional Ge crystals grown on (001)-Si substrates in another window
Journal Articles

Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates

A. Jung, A. G. Taboada, W. Stumpf, T. Kreiliger, F. Isa, G. Isella, E. Barthazy Meier, H. von Känel
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 075701 (2015)
https://doi.org/10.1063/1.4928609
Published: August 2015
View article titled, Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates
Open the PDF for Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates in another window
Journal Articles

Contactless measurement of alternating current conductance in quantum Hall structures

I. L. Drichko, A. M. Diakonov, V. A. Malysh, I. Yu. Smirnov, Y. M. Galperin, N. D. Ilyinskaya, A. A. Usikova, M. Kummer, H. von Känel
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 154309 (2014)
https://doi.org/10.1063/1.4898737
Published: October 2014
View article titled, Contactless measurement of alternating current conductance in quantum Hall structures
Open the PDF for Contactless measurement of alternating current conductance in quantum Hall structures in another window
Journal Articles

AC transport in p-Ge/GeSi quantum well in high magnetic fields

I. L. Drichko, V. A. Malysh, I. Yu. Smirnov, L. E. Golub, S. A. Tarasenko, A. V. Suslov, O. A. Mironov, M. Kummer, H. von Känel
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1610, 53–58 (2014)
https://doi.org/10.1063/1.4893510
Published: August 2014
View article titled, AC transport in p-Ge/GeSi quantum well in high magnetic fields
Open the PDF for AC transport in p-Ge/GeSi quantum well in high magnetic fields in another window
Journal Articles

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

A. G. Taboada, T. Kreiliger, C. V. Falub, F. Isa, M. Salvalaglio, L. Wewior, D. Fuster, M. Richter, E. Uccelli, P. Niedermann, A. Neels, F. Mancarella, B. Alén, L. Miglio, A. Dommann, G. Isella, H. von Känel
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 022112 (2014)
https://doi.org/10.1063/1.4861864
Published: January 2014
View article titled, Strain relaxation of GaAs/Ge crystals on patterned Si substrates
Open the PDF for Strain relaxation of GaAs/Ge crystals on patterned Si substrates in another window
Journal Articles

Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields

I. L. Drichko, V. A. Malysh, I. Yu. Smirnov, A. V. Suslov, O. A. Mironov, M. Kummer, H. von Känel
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 074302 (2013)
https://doi.org/10.1063/1.4818436
Published: August 2013
View article titled, Acoustoelectric effects in very high-mobility <em>p</em>-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields
Open the PDF for Acoustoelectric effects in very high-mobility <em>p</em>-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields in another window
Journal Articles

Characterization of vacancy-type defects in heteroepitaxial GaN grown by low-energy plasma-enhanced vapor phase epitaxy

A. Calloni, R. Ferragut, A. Dupasquier, H. von Känel, A. Guiller, A. Rutz, L. Ravelli, W. Egger
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 024510 (2012)
https://doi.org/10.1063/1.4737402
Published: July 2012
View article titled, Characterization of vacancy-type defects in heteroepitaxial GaN grown by low-energy plasma-enhanced vapor phase epitaxy
Open the PDF for Characterization of vacancy-type defects in heteroepitaxial GaN grown by low-energy plasma-enhanced vapor phase epitaxy in another window
Journal Articles

Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

H. P. Hsu, P. H. Wu, Y. S. Huang, D. Chrastina, G. Isella, H. von Känel, K. K. Tiong
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 041905 (2012)
https://doi.org/10.1063/1.3679608
Published: January 2012
View article titled, Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
Open the PDF for Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers in another window
Journal Articles

Near infrared image sensor with integrated germanium photodiodes.

R. Kaufmann, G. Isella, A. Sanchez-Amores, S. Neukom, A. Neels, L. Neumann, A. Brenzikofer, A. Dommann, C. Urban, H. von Känel
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 023107 (2011)
https://doi.org/10.1063/1.3608245
Published: July 2011
View article titled, Near infrared image sensor with integrated germanium photodiodes.
Open the PDF for Near infrared image sensor with integrated germanium photodiodes. in another window
Journal Articles

Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers

E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, H. von Känel
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 031106 (2011)
https://doi.org/10.1063/1.3541782
Published: January 2011
View article titled, Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers
Open the PDF for Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers in another window
Journal Articles

Si/SiGe quantum cascade superlattice designs for terahertz emission

G. Matmon, D. J. Paul, L. Lever, M. Califano, Z. Ikonić, R. W. Kelsall, J. Zhang, D. Chrastina, G. Isella, H. von Känel, E. Müller, A. Neels
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 053109 (2010)
https://doi.org/10.1063/1.3319653
Published: March 2010
View article titled, Si/SiGe quantum cascade superlattice designs for terahertz emission
Open the PDF for Si/SiGe quantum cascade superlattice designs for terahertz emission in another window
Journal Articles

Acoustoelectric effects in very high-mobility p -SiGe / Ge / SiGe heterostructure

I. L. Drichko, A. M. Diakonov, E. V. Lebedeva, I. Yu. Smirnov, O. A. Mironov, M. Kummer, H. von Känel
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 094305 (2009)
https://doi.org/10.1063/1.3251568
Published: November 2009
View article titled, Acoustoelectric effects in very high-mobility p -SiGe / Ge / SiGe heterostructure
Open the PDF for Acoustoelectric effects in very high-mobility p -SiGe / Ge / SiGe heterostructure in another window
Journal Articles

Ultralow dark current Ge/Si(100) photodiodes with low thermal budget

J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, H. von Känel
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 201106 (2009)
https://doi.org/10.1063/1.3125252
Published: May 2009
View article titled, Ultralow dark current Ge/Si(100) photodiodes with low thermal budget
Open the PDF for Ultralow dark current Ge/Si(100) photodiodes with low thermal budget in another window
Journal Articles

Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments

P. L. Novikov, A. Le Donne, S. Cereda, Leo Miglio, S. Pizzini, S. Binetti, M. Rondanini, C. Cavallotti, D. Chrastina, T. Moiseev, H. von Känel, G. Isella, F. Montalenti
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 051904 (2009)
https://doi.org/10.1063/1.3077187
Published: February 2009
View article titled, Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments
Open the PDF for Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments in another window
Journal Articles

Phonon strain shift coefficients in Si 1 − x Ge x alloys

F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, G. Bauer
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 093521 (2008)
https://doi.org/10.1063/1.2913052
Published: May 2008
View article titled, Phonon strain shift coefficients in Si 1 − x Ge x alloys
Open the PDF for Phonon strain shift coefficients in Si 1 − x Ge x alloys in another window