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Journal Articles

Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment

B. C. McGuigan, A. S. Chang, C. Greenhill, H. T. Johnson, R. S. Goldman
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 085703 (2022)
https://doi.org/10.1063/5.0070657
Published: February 2022
View article titled, Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment
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Includes: Supplementary data
Journal Articles

Focused ion beam-induced droplet formation and motion

J. M. Stout, J. B. Freund, H. T. Johnson
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 085107 (2019)
https://doi.org/10.1063/1.5111543
Published: August 2019
View article titled, Focused ion beam-induced droplet formation and motion
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Journal Articles

Atomic-scale thermocapillary flow in focused ion beam milling

K. Das, H. T. Johnson, J. B. Freund
Journal: Physics of Fluids
Physics of Fluids 27, 052003 (2015)
https://doi.org/10.1063/1.4919782
Published: May 2015
View article titled, Atomic-scale thermocapillary flow in focused ion beam milling
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Journal Articles

Electron-dependent thermoelectric properties in Si/Si1-xGex heterostructures and Si1-xGex alloys from first-principles

M. Z. Hossain, H. T. Johnson
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 253901 (2012)
https://doi.org/10.1063/1.4729765
Published: June 2012
View article titled, Electron-dependent thermoelectric properties in Si/Si<sub>1-</sub><sub><em>x</em></sub>Ge<sub><em>x</em></sub> heterostructures and Si<sub>1-</sub><sub><em>x</em></sub>Ge<sub><em>x</em></sub> alloys from first-principles
Open the PDF for Electron-dependent thermoelectric properties in Si/Si<sub>1-</sub><sub><em>x</em></sub>Ge<sub><em>x</em></sub> heterostructures and Si<sub>1-</sub><sub><em>x</em></sub>Ge<sub><em>x</em></sub> alloys from first-principles in another window
Journal Articles

Ion impact energy distribution and sputtering of Si and Ge

M. Z. Hossain, J. B. Freund, H. T. Johnson
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 103513 (2012)
https://doi.org/10.1063/1.4718024
Published: May 2012
View article titled, Ion impact energy distribution and sputtering of Si and Ge
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Journal Articles

Ion impact crater asymmetry determines surface ripple orientation

M. Z. Hossain, K. Das, J. B. Freund, H. T. Johnson
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 151913 (2011)
https://doi.org/10.1063/1.3650469
Published: October 2011
View article titled, Ion impact crater asymmetry determines surface ripple orientation
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Includes: Supplementary data
Journal Articles

Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices

S. Huang, A. V. Semichaevsky, L. Webster, H. T. Johnson, R. S. Goldman
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 073105 (2011)
https://doi.org/10.1063/1.3631785
Published: October 2011
View article titled, Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices
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Journal Articles

Influence of Mn dopants on InAs/GaAs quantum dot electronic states

V. D. Dasika, A. V. Semichaevsky, J. P. Petropoulos, J. C. Dibbern, A. M. Dangelewicz, M. Holub, P. K. Bhattacharya, J. M. O. Zide, H. T. Johnson, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 141907 (2011)
https://doi.org/10.1063/1.3567510
Published: April 2011
View article titled, Influence of Mn dopants on InAs/GaAs quantum dot electronic states
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Includes: Supplementary data
Journal Articles

Effects of composition, strain, and atomic disorder on optical phonon frequencies in Si 1 − x Ge x

M. Z. Hossain, H. T. Johnson
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 073515 (2010)
https://doi.org/10.1063/1.3371678
Published: April 2010
View article titled, Effects of composition, strain, and atomic disorder on optical phonon frequencies in Si 1 − x Ge x
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Journal Articles

Statistical characterization of surface defects created by Ar ion bombardment of crystalline silicon

M. Ghazisaeidi, J. B. Freund, H. T. Johnson
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 054304 (2008)
https://doi.org/10.1063/1.2974102
Published: September 2008
View article titled, Statistical characterization of surface defects created by Ar ion bombardment of crystalline silicon
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Journal Articles

Single impact crater functions for ion bombardment of silicon

N. Kalyanasundaram, M. Ghazisaeidi, J. B. Freund, H. T. Johnson
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 131909 (2008)
https://doi.org/10.1063/1.2905297
Published: April 2008
View article titled, Single impact crater functions for ion bombardment of silicon
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Journal Articles

Differential sputter yields in Si 1 − x Ge x

M. Zubaer Hossain, Jonathan B. Freund, H. T. Johnson
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 073508 (2008)
https://doi.org/10.1063/1.2896451
Published: April 2008
View article titled, Differential sputter yields in Si 1 − x Ge x
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Journal Articles

Optimization of a single defect photonic crystal laser cavity

Walter R. Frei, H. T. Johnson, Kent D. Choquette
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 033102 (2008)
https://doi.org/10.1063/1.2838173
Published: February 2008
View article titled, Optimization of a single defect photonic crystal laser cavity
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Journal Articles

Effect of screw dislocation density on optical properties in n -type wurtzite GaN

Jeong Ho You, H. T. Johnson
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 023516 (2007)
https://doi.org/10.1063/1.2407455
Published: January 2007
View article titled, Effect of screw dislocation density on optical properties in n -type wurtzite GaN
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Journal Articles

Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction

H. T. Johnson-Steigelman, A. V. Brinck, J. P. Chang, P. F. Lyman
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 1218–1222 (2006)
https://doi.org/10.1116/1.2180274
Published: June 2006
View article titled, Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction
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Journal Articles

Electron scattering due to threading edge dislocations in n -type wurtzite GaN

Jeong Ho You, Jun-Qiang Lu, H. T. Johnson
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 033706 (2006)
https://doi.org/10.1063/1.2168028
Published: February 2006
View article titled, Electron scattering due to threading edge dislocations in n -type wurtzite GaN
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Journal Articles

Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements

Jun-Qiang Lu, H. T. Johnson, V. D. Dasika, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 053109 (2006)
https://doi.org/10.1063/1.2171473
Published: January 2006
View article titled, Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements
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Journal Articles

Structural trends interpretation of the metal-to-semiconductor transition in deformed carbon nanotubes

Jun-Qiang Lu, Jian Wu, Wenhui Duan, Bing-Lin Gu, H. T. Johnson
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 114314 (2005)
https://doi.org/10.1063/1.1923160
Published: May 2005
View article titled, Structural trends interpretation of the metal-to-semiconductor transition in deformed carbon nanotubes
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Journal Articles

Topology optimization of a photonic crystal waveguide termination to maximize directional emission

W. R. Frei, D. A. Tortorelli, H. T. Johnson
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 111114 (2005)
https://doi.org/10.1063/1.1885170
Published: March 2005
View article titled, Topology optimization of a photonic crystal waveguide termination to maximize directional emission
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Journal Articles

Crystallite coalescence during film growth based on improved contact mechanics adhesion models

Allison Y. Suh, Ning Yu, Ki Myung Lee, Andreas A. Polycarpou, H. T. Johnson
Journal: Journal of Applied Physics
J. Appl. Phys. 96, 1348–1359 (2004)
https://doi.org/10.1063/1.1766099
Published: August 2004
View article titled, Crystallite coalescence during film growth based on improved contact mechanics adhesion models
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