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Journal Articles

Growth of boron-doped few-layer graphene by molecular beam epitaxy

G. V. Soares, S. Nakhaie, M. Heilmann, H. Riechert, J. M. J. Lopes

Appl. Phys. Lett. 112, 163103 (2018)

https://doi.org/10.1063/1.5019352

Published: April 2018

View articletitled, Growth of boron-doped few-layer graphene by molecular beam epitaxy

Journal Articles

In/GaN(0001)- ( 3 × 3 ) R 30 ° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices

C. Chèze, F. Feix, M. Anikeeva, T. Schulz, M. Albrecht, H. Riechert, O. Brandt, R. Calarco

Appl. Phys. Lett. 110, 072104 (2017)

https://doi.org/10.1063/1.4976198

Published: February 2017

View articletitled, In/GaN(0001)- ( 3 × 3 ) R 30 ° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices

Journal Articles

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

M. Musolino, D. van Treeck, A. Tahraoui, L. Scarparo, C. De Santi, M. Meneghini, E. Zanoni, L. Geelhaar, H. Riechert

J. Appl. Phys. 119, 044502 (2016)

https://doi.org/10.1063/1.4940949

Published: January 2016

View articletitled, A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Journal Articles

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

S. Nakhaie, J. M. Wofford, T. Schumann, U. Jahn, M. Ramsteiner, M. Hanke, J. M. J. Lopes, H. Riechert

Appl. Phys. Lett. 106, 213108 (2015)

https://doi.org/10.1063/1.4921921

Published: May 2015

View articletitled, Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Journal Articles

Local structure of epitaxial GeTe and Ge₂Sb₂Te₅ films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study

A. V. Kolobov, P. Fons, M. Krbal, J. Tominaga, A. Giussani, K. Perumal, H. Riechert, R. Calarco, T. Uruga

J. Appl. Phys. 117, 125308 (2015)

https://doi.org/10.1063/1.4916529

Published: March 2015

View articletitled, Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study

Journal Articles

Si doping effects on (In,Ga)N nanowires

J. Kamimura, M. Ramsteiner, L. Geelhaar, H. Riechert

J. Appl. Phys. 116, 244310 (2014)

https://doi.org/10.1063/1.4905257

Published: December 2014

View articletitled, Si doping effects on (In,Ga)N nanowires

Journal Articles

Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires

M. Musolino, A. Tahraoui, F. Limbach, J. Lähnemann, U. Jahn, O. Brandt, L. Geelhaar, H. Riechert

Appl. Phys. Lett. 105, 083505 (2014)

https://doi.org/10.1063/1.4894241

Published: August 2014

View articletitled, Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires

Includes: Supplementary data

Journal Articles

Structural change upon annealing of amorphous GeSbTe grown on Si(111)

V. Bragaglia, B. Jenichen, A. Giussani, K. Perumal, H. Riechert, R. Calarco

J. Appl. Phys. 116, 054913 (2014)

https://doi.org/10.1063/1.4892394

Published: August 2014

View articletitled, Structural change upon annealing of amorphous GeSbTe grown on Si(111)

Journal Articles

Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder

K. K. Sabelfeld, V. M. Kaganer, F. Limbach, P. Dogan, O. Brandt, L. Geelhaar, H. Riechert

Appl. Phys. Lett. 103, 133105 (2013)

https://doi.org/10.1063/1.4822110

Published: September 2013

View articletitled, Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder

Journal Articles

Acousto-electric transport in epitaxial monolayer graphene on SiC

P. V. Santos, T. Schumann, M. H. Oliveira, Jr., J. M. J. Lopes, H. Riechert

Appl. Phys. Lett. 102, 221907 (2013)

https://doi.org/10.1063/1.4809726

Published: June 2013

View articletitled, Acousto-electric transport in epitaxial monolayer graphene on SiC

Journal Articles

Volmer-Weber growth of AlSb on Si(111)

A. Proessdorf, M. Hanke, B. Jenichen, W. Braun, H. Riechert

Appl. Phys. Lett. 102, 041601 (2013)

https://doi.org/10.1063/1.4789536

Published: January 2013

View articletitled, Volmer-Weber growth of AlSb on Si(111)

Journal Articles

Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires

C. Pfüller, M. Ramsteiner, O. Brandt, F. Grosse, A. Rathsfeld, G. Schmidt, L. Geelhaar, H. Riechert

Appl. Phys. Lett. 101, 083104 (2012)

https://doi.org/10.1063/1.4747208

Published: August 2012

View articletitled, Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires

Journal Articles

Recrystallization of an amorphized epitaxial phase-change alloy: A phoenix arising from the ashes

P. Rodenbach, A. Giussani, K. Perumal, M. Hanke, M. Dubslaff, H. Riechert, R. Calarco, M. Burghammer, A. V. Kolobov, P. Fons

Appl. Phys. Lett. 101, 061903 (2012)

https://doi.org/10.1063/1.4742919

Published: August 2012

View articletitled, Recrystallization of an amorphized epitaxial phase-change alloy: A phoenix arising from the ashes

Journal Articles

Optical switching and related structural properties of epitaxial Ge₂Sb₂Te₅ films

F. Gericke, T. Flissikowski, J. Lähnemann, F. Katmis, W. Braun, H. Riechert, H. T. Grahn

J. Appl. Phys. 111, 113524 (2012)

https://doi.org/10.1063/1.4728221

Published: June 2012

View articletitled, Optical switching and related structural properties of epitaxial Ge2Sb2Te5 films

Journal Articles

Erratum: “Analyzing the growth of In_xGa_1−xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction” [Appl. Phys. Lett. 98, 261907 (2011)]

M. Wölz, V. M. Kaganer, O. Brandt, L. Geelhaar, H. Riechert

Appl. Phys. Lett. 100, 179902 (2012)

https://doi.org/10.1063/1.4705374

Published: April 2012

View articletitled, Erratum: “Analyzing the growth of InxGa1−xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction” [Appl. Phys. Lett. 98, 261907 (2011)]

Journal Articles

The influence of Mg doping on the nucleation of self-induced GaN nanowires

F. Limbach, R. Caterino, T. Gotschke, T. Stoica, R. Calarco, L. Geelhaar, H. Riechert

AIP Advances 2, 012157 (2012)

https://doi.org/10.1063/1.3693394

Published: February 2012

View articletitled, The influence of Mg doping on the nucleation of self-induced GaN nanowires

Journal Articles

Efficient room-temperature spin detector based on GaNAs

Y. Puttisong, I. A. Buyanova, L. Geelhaar, H. Riechert, C. W. Tu, W. M. Chen

J. Appl. Phys. 111, 07C303 (2012)

https://doi.org/10.1063/1.3671781

Published: February 2012

View articletitled, Efficient room-temperature spin detector based on GaNAs

Journal Articles

Influence of the silicon carbide surface morphology on the epitaxial graphene formation

M. H. Oliveira, Jr., T. Schumann, M. Ramsteiner, J. M. J. Lopes, H. Riechert

Appl. Phys. Lett. 99, 111901 (2011)

https://doi.org/10.1063/1.3638058

Published: September 2011

View articletitled, Influence of the silicon carbide surface morphology on the epitaxial graphene formation

Journal Articles

Physical origin of the incubation time of self-induced GaN nanowires

V. Consonni, A. Trampert, L. Geelhaar, H. Riechert

Appl. Phys. Lett. 99, 033102 (2011)

https://doi.org/10.1063/1.3610964

Published: July 2011

View articletitled, Physical origin of the incubation time of self-induced GaN nanowires

Journal Articles

Analyzing the growth of In_xGa_1−xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction

M. Wölz, V. M. Kaganer, O. Brandt, L. Geelhaar, H. Riechert

Appl. Phys. Lett. 98, 261907 (2011)

https://doi.org/10.1063/1.3604810

Published: June 2011

View articletitled, Analyzing the growth of InxGa1−xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction

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Growth of boron-doped few-layer graphene by molecular beam epitaxy

In/GaN(0001)- ( 3 × 3 ) R 30 ° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Local structure of epitaxial GeTe and Ge₂Sb₂Te₅ films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study

Si doping effects on (In,Ga)N nanowires

Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires

Structural change upon annealing of amorphous GeSbTe grown on Si(111)

Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder

Acousto-electric transport in epitaxial monolayer graphene on SiC

Volmer-Weber growth of AlSb on Si(111)

Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires

Recrystallization of an amorphized epitaxial phase-change alloy: A phoenix arising from the ashes

Optical switching and related structural properties of epitaxial Ge₂Sb₂Te₅ films

Erratum: “Analyzing the growth of In_xGa_1−xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction” [Appl. Phys. Lett. 98, 261907 (2011)]

The influence of Mg doping on the nucleation of self-induced GaN nanowires

Efficient room-temperature spin detector based on GaNAs

Influence of the silicon carbide surface morphology on the epitaxial graphene formation

Physical origin of the incubation time of self-induced GaN nanowires

Analyzing the growth of In_xGa_1−xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction

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