1-20 of 55
H. Q. Xu
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Atomic step guided self-assembled growth of indium nanowires on germanium

Open Access
Ding-Ming Huang, Bin-Xiao Fu, Jian-Huan Wang, Yi-Xin Chu, Dong Han, H. Q. Xu, Jian-Jun Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 245303 (2025)
https://doi.org/10.1063/5.0258753
Published: June 2025
View article titled, Atomic step guided self-assembled growth of indium nanowires on germanium
Open the PDF for Atomic step guided self-assembled growth of indium nanowires on germanium in another window
Journal Articles

High-quality Ge/SiGe heterostructure with atomically sharp interface grown by molecular beam epitaxy

Open Access
Jie-yin Zhang, Ming Ming, Jian-huan Wang, Ding-ming Huang, Han Gao, Yi-xin Chu, Bin-xiao Fu, H. Q. Xu, Jian-jun Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 122106 (2024)
https://doi.org/10.1063/5.0210639
Published: September 2024
View article titled, High-quality Ge/SiGe heterostructure with atomically sharp interface grown by molecular beam epitaxy
Open the PDF for High-quality Ge/SiGe heterostructure with atomically sharp interface grown by molecular beam epitaxy in another window
Journal Articles

2D electron gas formation on InAs wurtzite nanosheet surfaces

Open Access
S. Benter, M. Bianchi, D. Pan, J. Zhao, H. Q. Xu, R. Timm, Ph. Hofmann, A. Mikkelsen
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 153104 (2024)
https://doi.org/10.1063/5.0200217
Published: April 2024
View article titled, 2D electron gas formation on InAs wurtzite nanosheet surfaces
Open the PDF for 2D electron gas formation on InAs wurtzite nanosheet surfaces in another window
Includes: Supplementary data
Journal Articles

Tunable transport properties of dual-gated InAs/GaSb core/shell nanowires

Available to Purchase
Zhencun Pan, Dong Pan, Yifeng Zhou, Jianhua Zhao, H. Q. Xu, Shaoyun Huang
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 084302 (2023)
https://doi.org/10.1063/5.0130623
Published: February 2023
View article titled, Tunable transport properties of dual-gated InAs/GaSb core/shell nanowires
Open the PDF for Tunable transport properties of dual-gated InAs/GaSb core/shell nanowires in another window
Includes: Supplementary data
Journal Articles

Electron transport properties of a narrow-bandgap semiconductor Bi2O2Te nanosheet

Available to Purchase
Xiaobo Li, Haitian Su, H. Q. Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 233102 (2022)
https://doi.org/10.1063/5.0092046
Published: June 2022
View article titled, Electron transport properties of a narrow-bandgap semiconductor Bi2O2Te nanosheet
Open the PDF for Electron transport properties of a narrow-bandgap semiconductor Bi2O2Te nanosheet in another window
Includes: Supplementary data
Journal Articles

Adiabatic topological pumping in a semiconductor nanowire

Available to Purchase
Zhi-Hai Liu, H. Q. Xu
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 174301 (2021)
https://doi.org/10.1063/5.0062653
Published: November 2021
View article titled, Adiabatic topological pumping in a semiconductor nanowire
Open the PDF for Adiabatic topological pumping in a semiconductor nanowire in another window
Journal Articles

Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor

Available to Purchase
Weijie Li, Jingwei Mu, Shaoyun Huang, Dong Pan, Jianhua Zhao, H. Q. Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 262102 (2020)
https://doi.org/10.1063/5.0032832
Published: December 2020
View article titled, Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor
Open the PDF for Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor in another window
Includes: Supplementary data
Journal Articles

Measurements of spin–orbit interaction in epitaxially grown InAs nanosheets

Available to Purchase
Furong Fan, Yuanjie Chen, Dong Pan, Jianhua Zhao, H. Q. Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 132101 (2020)
https://doi.org/10.1063/5.0023722
Published: September 2020
View article titled, Measurements of spin–orbit interaction in epitaxially grown InAs nanosheets
Open the PDF for Measurements of spin–orbit interaction in epitaxially grown InAs nanosheets in another window
Journal Articles

Observation of inward transport flux accompanied with the long-lived mode during the L-H transition in the HL-2A tokamak

Available to Purchase
J. Wu, T. Lan, G. Zhuang, M. Xu, C. X. Yu, J. R. Wu, L. Nie, W. Chen, L. M. Yu, J. Cheng, L. W. Yan, X. R. Duan, T. J. Deng, H. Q. Xu, S. Zhang, J. F. Zhu, Y. Yu, X. Sun, W. Z. Mao, A. D. Liu, J. L. Xie, H. Li, W. X. Ding, W. D. Liu
Journal: Physics of Plasmas
Phys. Plasmas 27, 012304 (2020)
https://doi.org/10.1063/1.5126070
Published: January 2020
View article titled, Observation of inward transport flux accompanied with the long-lived mode during the L-H transition in the HL-2A tokamak
Open the PDF for Observation of inward transport flux accompanied with the long-lived mode during the L-H transition in the HL-2A tokamak in another window
Journal Articles

Coulomb blockade from the shell of an InP-InAs core-shell nanowire with a triangular cross section

Available to Purchase
D. J. O. Göransson, M. Heurlin, B. Dalelkhan, S. Abay, M. E. Messing, V. F. Maisi, M. T. Borgström, H. Q. Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 053108 (2019)
https://doi.org/10.1063/1.5084222
Published: February 2019
View article titled, Coulomb blockade from the shell of an InP-InAs core-shell nanowire with a triangular cross section
Open the PDF for Coulomb blockade from the shell of an InP-InAs core-shell nanowire with a triangular cross section in another window
Journal Articles

Gate defined quantum dot realized in a single crystalline InSb nanosheet

Available to Purchase
Jianhong Xue, Yuanjie Chen, Dong Pan, Ji-Yin Wang, Jianhua Zhao, Shaoyun Huang, H. Q. Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 023108 (2019)
https://doi.org/10.1063/1.5064368
Published: January 2019
View article titled, Gate defined quantum dot realized in a single crystalline InSb nanosheet
Open the PDF for Gate defined quantum dot realized in a single crystalline InSb nanosheet in another window
Journal Articles

Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures

Available to Purchase
Jiayu Li, Li Lin, Guang-Yao Huang, N. Kang, Jincan Zhang, Hailin Peng, Zhongfan Liu, H. Q. Xu
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 064303 (2018)
https://doi.org/10.1063/1.5009742
Published: February 2018
View article titled, Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures
Open the PDF for Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures in another window
Journal Articles

Gate tunable parallel double quantum dots in InAs double-nanowire devices

Available to Purchase
S. Baba, S. Matsuo, H. Kamata, R. S. Deacon, A. Oiwa, K. Li, S. Jeppesen, L. Samuelson, H. Q. Xu, S. Tarucha
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 233513 (2017)
https://doi.org/10.1063/1.4997646
Published: December 2017
View article titled, Gate tunable parallel double quantum dots in InAs double-nanowire devices
Open the PDF for Gate tunable parallel double quantum dots in InAs double-nanowire devices in another window
Includes: Supplementary data
Journal Articles

k.p theory of freestanding narrow band gap semiconductor nanowires

Open Access
Ning Luo, Gaohua Liao, H. Q. Xu
Journal: AIP Advances
AIP Advances 6, 125109 (2016)
https://doi.org/10.1063/1.4972987
Published: December 2016
View article titled, k.p theory of freestanding narrow band gap semiconductor nanowires
Open the PDF for k.p theory of freestanding narrow band gap semiconductor nanowires in another window
Journal Articles

Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

Available to Purchase
Jiyin Wang, Shaoyun Huang, Zijin Lei, Dong Pan, Jianhua Zhao, H. Q. Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 053106 (2016)
https://doi.org/10.1063/1.4960464
Published: August 2016
View article titled, Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime
Open the PDF for Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime in another window
Journal Articles

Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

Open Access
Kan Li, Yingjie Xing, H. Q. Xu
Journal: AIP Advances
AIP Advances 6, 065311 (2016)
https://doi.org/10.1063/1.4954080
Published: June 2016
View article titled, Generic technique to grow III-V semiconductor nanowires in a closed glass vessel
Open the PDF for Generic technique to grow III-V semiconductor nanowires in a closed glass vessel in another window
Includes: Supplementary data
Journal Articles

Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts

Available to Purchase
Boyong Feng, Shaoyun Huang, Jiyin Wang, Dong Pan, Jianghua Zhao, H. Q. Xu
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 054304 (2016)
https://doi.org/10.1063/1.4941391
Published: February 2016
View article titled, Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts
Open the PDF for Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts in another window
Journal Articles

Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires

Available to Purchase
Gaohua Liao, Ning Luo, Zhihu Yang, Keqiu Chen, H. Q. Xu
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 094308 (2015)
https://doi.org/10.1063/1.4929412
Published: September 2015
View article titled, Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires
Open the PDF for Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires in another window
Journal Articles

Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxy

Available to Purchase
L. B. Wang, J. K. Guo, N. Kang, Dong Pan, Sen Li, Dingxun Fan, Jianhua Zhao, H. Q. Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 173105 (2015)
https://doi.org/10.1063/1.4919390
Published: April 2015
View article titled, Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxy
Open the PDF for Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxy in another window
Journal Articles

Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10 nm

Available to Purchase
Mengqi Fu, Dong Pan, Yingjun Yang, Tuanwei Shi, Zhiyong Zhang, Jianhua Zhao, H. Q. Xu, Qing Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 143101 (2014)
https://doi.org/10.1063/1.4897496
Published: October 2014
View article titled, Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10 nm
Open the PDF for Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10 nm in another window