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Journal Articles

BL-10C, the small-angle x-ray scattering beamline at the photon factory

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N. Shimizu, T. Mori, Y. Nagatani, H. Ohta, S. Saijo, H. Takagi, M. Takahashi, K. Yatabe, T. Kosuge, N. Igarashi
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2054, 060041 (2019)
https://doi.org/10.1063/1.5084672
Published: January 2019
View articletitled, BL-10C, the small-angle x-ray scattering beamline at the photon factory
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Journal Articles

Structural analysis of polymer thin films using GISAXS in the tender X-ray region: Concept and design of GISAXS experiments using the tender X-ray energy at BL-15A2 at the Photon Factory

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H. Takagi, N. Igarashi, T. Mori, S. Saijo, Y. Nagatani, H. Ohta, K. Yamamoto, N. Shimizu
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 142119 (2016)
https://doi.org/10.1063/1.4961977
Published: September 2016
View articletitled, Structural analysis of polymer thin films using GISAXS in the tender X-ray region: Concept and design of GISAXS experiments using the tender X-ray energy at BL-15A2 at the Photon Factory
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Journal Articles

Upgrade of small angle x-ray scattering beamline BL-6A at the photon factory

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H. Takagi, N. Igarashi, T. Mori, S. Saijo, H. Ohta, Y. Nagatani, T. Kosuge, N. Shimizu
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1741, 030018 (2016)
https://doi.org/10.1063/1.4952841
Published: July 2016
View articletitled, Upgrade of small angle x-ray scattering beamline BL-6A at the photon factory
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Journal Articles

Multi-frequency force-detected electron spin resonance in the millimeter-wave region up to 150 GHz

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E. Ohmichi, Y. Tokuda, R. Tabuse, D. Tsubokura, T. Okamoto, H. Ohta
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 87, 073904 (2016)
https://doi.org/10.1063/1.4959152
Published: July 2016
View articletitled, Multi-frequency force-detected electron spin resonance in the millimeter-wave region up to 150 GHz
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Journal Articles

Electronic transitions in GdN band structure

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R. Vidyasagar, T. Kita, T. Sakurai, H. Ohta
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 203717 (2014)
https://doi.org/10.1063/1.4880398
Published: May 2014
View articletitled, Electronic transitions in GdN band structure
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Journal Articles

Electron spin resonance study of Er-concentration effect in GaAs;Er,O containing charge carriers

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F. Elmasry, S. Okubo, H. Ohta, Y. Fujiwara
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 193904 (2014)
https://doi.org/10.1063/1.4876487
Published: May 2014
View articletitled, Electron spin resonance study of Er-concentration effect in GaAs;Er,O containing charge carriers
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Journal Articles

Evaluation of minority and majority spin band energies of ferromagnetic GdN thin film using optical absorption spectroscopy

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R. Vidyasagar, H. Yoshitomi, S. Kitayama, T. Kita, H. Ohta, T. Sakurai
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1566, 325–326 (2013)
https://doi.org/10.1063/1.4848417
Published: December 2013
View articletitled, Evaluation of minority and majority spin band energies of ferromagnetic GdN thin film using optical absorption spectroscopy
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Journal Articles

Giant optical splitting in the spin-states assisting a sharp magnetic switching in GdN thin films

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R. Vidyasagar, T. Kita, T. Sakurai, H. Ohta
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 222408 (2013)
https://doi.org/10.1063/1.4809758
Published: June 2013
View articletitled, Giant optical splitting in the spin-states assisting a sharp magnetic switching in GdN thin films
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Journal Articles

Ferromagnetic properties of GdN thin films studied by temperature dependent circular polarized spectroscopy

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H. Yoshitomi, R. Vidyasagar, S. Kitayama, T. Kita, H. Ohta, S. Okubo, Y. Fukuoka, T. Sakurai
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 072403 (2012)
https://doi.org/10.1063/1.4746265
Published: August 2012
View articletitled, Ferromagnetic properties of GdN thin films studied by temperature dependent circular polarized spectroscopy
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Journal Articles

Study on spin-splitting phenomena in the band structure of GdN

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R. Vidyasagar, S. Kitayama, H. Yoshitomi, T. Kita, T. Sakurai, H. Ohta
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 232410 (2012)
https://doi.org/10.1063/1.4727903
Published: June 2012
View articletitled, Study on spin-splitting phenomena in the band structure of GdN
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Journal Articles

Atomic structure of a Σ3 [110]/(111) grain boundary in CeO2

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B. Feng, H. Hojo, T. Mizoguchi, H. Ohta, S. D. Findlay, Y. Sato, N. Shibata, T. Yamamoto, Y. Ikuhara
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 073109 (2012)
https://doi.org/10.1063/1.3682310
Published: February 2012
View articletitled, Atomic structure of a Σ3 [110]/(111) grain boundary in CeO2
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Journal Articles

Ferromagnetic State of GdN Thin Film Studied by Ferromagnetic Resonance

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H. Ohta, M. Fujisawa, F. Elmasry, S. Okubo, Y. Fukuoka, H. Yoshitomi, S. Kitayama, T. Kita, O. Wada
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 679–680 (2011)
https://doi.org/10.1063/1.3666559
Published: December 2011
View articletitled, Ferromagnetic State of GdN Thin Film Studied by Ferromagnetic Resonance
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Journal Articles

Enhancing the electron mobility via delta-doping in SrTiO 3

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Y. Kozuka, M. Kim, H. Ohta, Y. Hikita, C. Bell, H. Y. Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 222115 (2010)
https://doi.org/10.1063/1.3524198
Published: December 2010
View articletitled, Enhancing the electron mobility via delta-doping in SrTiO 3
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Journal Articles

Carrier localization in m -plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy

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V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, S. Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 151106 (2010)
https://doi.org/10.1063/1.3502482
Published: October 2010
View articletitled, Carrier localization in m -plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
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Journal Articles

Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr +

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T. Nagaoka, K. Eriguchi, K. Ono, H. Ohta
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 023302 (2009)
https://doi.org/10.1063/1.3056391
Published: January 2009
View articletitled, Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr +
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Journal Articles

High-frequency electron spin resonance system using a microcantilever and a pulsed magnetic field

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E. Ohmichi, N. Mizuno, M. Kimata, H. Ohta, T. Osada
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 80, 013904 (2009)
https://doi.org/10.1063/1.3069287
Published: January 2009
View articletitled, High-frequency electron spin resonance system using a microcantilever and a pulsed magnetic field
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Journal Articles

Improved characteristics and issues of m -plane InGaN films grown on low defect density m -plane freestanding GaN substrates by metalorganic vapor phase epitaxy

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S. F. Chichibu, H. Yamaguchi, L. Zhao, M. Kubota, T. Onuma, K. Okamoto, H. Ohta
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 151908 (2008)
https://doi.org/10.1063/1.2998580
Published: October 2008
View articletitled, Improved characteristics and issues of m -plane InGaN films grown on low defect density m -plane freestanding GaN substrates by metalorganic vapor phase epitaxy
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Journal Articles

Magnetic detection of high-resolution electron spin resonance using a microcantilever in the millimeter-wave region up to 240 GHz

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E. Ohmichi, N. Mizuno, M. Kimata, H. Ohta
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 79, 103903 (2008)
https://doi.org/10.1063/1.2988834
Published: October 2008
View articletitled, Magnetic detection of high-resolution electron spin resonance using a microcantilever in the millimeter-wave region up to 240 GHz
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Journal Articles

An interatomic potential model for molecular dynamics simulation of silicon etching by Br + -containing plasmas

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H. Ohta, A. Iwakawa, K. Eriguchi, K. Ono
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 073302 (2008)
https://doi.org/10.1063/1.2990070
Published: October 2008
View articletitled, An interatomic potential model for molecular dynamics simulation of silicon etching by Br + -containing plasmas
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Journal Articles

Erratum: “Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates” [Appl. Phys. Lett. 92, 091912 (2008)]

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S. F. Chichibu, H. Yamaguchi, L. Zhao, M. Kubota, K. Okamoto, H. Ohta
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 129901 (2008)
https://doi.org/10.1063/1.2991440
Published: September 2008
View articletitled, Erratum: “Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates” [Appl. Phys. Lett. 92, 091912 (2008)]
Open the PDF for Erratum: “Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates” [Appl. Phys. Lett. 92, 091912 (2008)] in another window