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1-15 of 15
H. K. Haugen
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Journal Articles
Ablation and structural changes induced in InP surfaces by single 10 fs laser pulses in air
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 106, 074907 (2009)
Published: October 2009
Journal Articles
Cross-sectional study of periodic surface structures on gallium phosphide induced by ultrashort laser pulse irradiation
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 92, 221112 (2008)
Published: June 2008
Journal Articles
High-resolution observations of an amorphous layer and subsurface damage formed by femtosecond laser irradiation of silicon
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 103, 053104 (2008)
Published: March 2008
Journal Articles
Periodic surface structures on gallium phosphide after irradiation with 150 fs – 7 ns laser pulses at 800 nm
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 91, 111102 (2007)
Published: September 2007
Journal Articles
Subsurface modifications in indium phosphide induced by single and multiple femtosecond laser pulses: A study on the formation of periodic ripples
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 101, 033519 (2007)
Published: February 2007
Journal Articles
Imaging the strain fields resulting from laser micromachining of semiconductors
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 83, 225–227 (2003)
Published: July 2003
Journal Articles
Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 82, 4462–4464 (2003)
Published: June 2003
Journal Articles
Wavelength tunable ultrashort pulse generation from a passively mode-locked asymmetric-quantum-well semiconductor laser
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 81, 2502–2504 (2002)
Published: September 2002
Journal Articles
Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 76, 2791–2793 (2000)
Published: May 2000
Journal Articles
Binding Energies in Atomic Negative Ions: III
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J. Phys. Chem. Ref. Data 28, 1511–1533 (1999)
Published: November 1999
Journal Articles
Visible photoluminescence from helium‐ion implanted carbon in silicon
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 78, 6185–6188 (1995)
Published: November 1995
Journal Articles
Helium bubbles in silicon: Structure and optical properties
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 66, 1319–1321 (1995)
Published: March 1995
Journal Articles
Forward elastic recoil measurements using heavy ions
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Journal:
Journal of Applied Physics
J. Appl. Phys. 76, 4524–4532 (1994)
Published: October 1994
Journal Articles
Multiphoton detachment of negative ions
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Journal:
AIP Conference Proceedings
AIP Conf. Proc. 295, 105–114 (1993)
Published: December 1993
Journal Articles
Multiphoton detachment of negative ions
Available to Purchase
Journal:
AIP Conference Proceedings
AIP Conf. Proc. 290, 237–242 (1993)
Published: October 1993