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Journal Articles

Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement

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M. Mikulics, P. Kordoš, D. Gregušová, Z. Sofer, A. Winden, St. Trellenkamp, J. Moers, J. Mayer, H. Hardtdegen
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 043101 (2021)
https://doi.org/10.1063/5.0038070
Published: January 2021
View articletitled, Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement
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Journal Articles

Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics

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M. Mikulics, A. Winden, M. Marso, A. Moonshiram, H. Lüth, D. Grützmacher, H. Hardtdegen
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 041103 (2016)
https://doi.org/10.1063/1.4960007
Published: July 2016
View articletitled, Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics
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Journal Articles

Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

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M. Mikulics, Y. C. Arango, A. Winden, R. Adam, A. Hardtdegen, D. Grützmacher, E. Plinski, D. Gregušová, J. Novák, P. Kordoš, A. Moonshiram, M. Marso, Z. Sofer, H. Lüth, H. Hardtdegen
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 061107 (2016)
https://doi.org/10.1063/1.4941923
Published: February 2016
View articletitled, Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes
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Journal Articles

Reduction of skin effect losses in double-level-T-gate structure

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M. Mikulics, H. Hardtdegen, Y. C. Arango, R. Adam, A. Fox, D. Grützmacher, D. Gregušová, S. Stanček, J. Novák, P. Kordoš, Z. Sofer, L. Juul, M. Marso
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 232102 (2014)
https://doi.org/10.1063/1.4903468
Published: December 2014
View articletitled, Reduction of skin effect losses in double-level-T-gate structure
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Journal Articles

High-field quasi-ballistic transport in AlGaN/GaN heterostructures

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B. A. Danilchenko, N. A. Tripachko, A. E. Belyaev, S. A. Vitusevich, H. Hardtdegen, H. Lüth
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 072105 (2014)
https://doi.org/10.1063/1.4866281
Published: February 2014
View articletitled, High-field quasi-ballistic transport in AlGaN/GaN heterostructures
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Journal Articles

Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy

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C. Rodenbücher, T. Gensch, W. Speier, U. Breuer, M. Pilch, H. Hardtdegen, M. Mikulics, E. Zych, R. Waser, K. Szot
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 162904 (2013)
https://doi.org/10.1063/1.4825367
Published: October 2013
View articletitled, Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy
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Journal Articles

Long electron spin coherence in ion‐implanted GaN: The role of localization

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J. H. Buß, J. Rudolph, S. Shvarkov, H. Hardtdegen, A. D. Wieck, D. Hägele
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 192102 (2013)
https://doi.org/10.1063/1.4804558
Published: May 2013
View articletitled, Long electron spin coherence in ion‐implanted GaN: The role of localization
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Journal Articles

Supercurrent in Nb/InAs-nanowire/Nb Josephson junctions

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H. Y. Günel, I. E. Batov, H. Hardtdegen, K. Sladek, A. Winden, K. Weis, G. Panaitov, D. Grützmacher, Th. Schäpers
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 034316 (2012)
https://doi.org/10.1063/1.4745024
Published: August 2012
View articletitled, Supercurrent in Nb/InAs-nanowire/Nb Josephson junctions
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Journal Articles

Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires

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S. Wirths, M. Mikulics, P. Heintzmann, A. Winden, K. Weis, Ch. Volk, K. Sladek, N. Demarina, H. Hardtdegen, D. Grützmacher, Th. Schäpers
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 042103 (2012)
https://doi.org/10.1063/1.3678639
Published: January 2012
View articletitled, Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires
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Journal Articles

Effect of Si-doping on InAs nanowire transport and morphology

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S. Wirths, K. Weis, A. Winden, K. Sladek, C. Volk, S. Alagha, T. E. Weirich, M. von der Ahe, H. Hardtdegen, H. Lüth, N. Demarina, D. Grützmacher, Th. Schäpers
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 053709 (2011)
https://doi.org/10.1063/1.3631026
Published: September 2011
View articletitled, Effect of Si-doping on InAs nanowire transport and morphology
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Journal Articles

g-factor and exchange energy in a few-electron lateral InGaAs quantum dot

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M. Larsson, H. A. Nilsson, H. Hardtdegen, H. Q. Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 192112 (2009)
https://doi.org/10.1063/1.3264053
Published: November 2009
View articletitled, g-factor and exchange energy in a few-electron lateral InGaAs quantum dot
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Journal Articles

Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures

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V. P. Kladko, A. V. Kuchuk, N. V. Safryuk, V. F. Machulin, A. E. Belyaev, H. Hardtdegen, S. A. Vitusevich
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 031907 (2009)
https://doi.org/10.1063/1.3184569
Published: July 2009
View articletitled, Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures
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Journal Articles

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

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A. M. Kurakin, S. A. Vitusevich, S. V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, A. V. Naumov, A. E. Belyaev
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 073703 (2009)
https://doi.org/10.1063/1.3100206
Published: April 2009
View articletitled, Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures
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Journal Articles

Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate

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V. P. Kladko, A. F. Kolomys, M. V. Slobodian, V. V. Strelchuk, V. G. Raycheva, A. E. Belyaev, S. S. Bukalov, H. Hardtdegen, V. A. Sydoruk, N. Klein, S. A. Vitusevich
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 063515 (2009)
https://doi.org/10.1063/1.3094022
Published: March 2009
View articletitled, Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate
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Journal Articles

Mechanism of mobility increase of the two-dimensional electron gas in Al Ga N ∕ Ga N heterostructures under small dose gamma irradiation

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A. M. Kurakin, S. A. Vitusevich, S. V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, B. A. Danilchenko, R. V. Konakova, A. E. Belyaev
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 083707 (2008)
https://doi.org/10.1063/1.2903144
Published: April 2008
View articletitled, Mechanism of mobility increase of the two-dimensional electron gas in Al Ga N ∕ Ga N heterostructures under small dose gamma irradiation
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Journal Articles

On the magnetic properties of Gd implanted GaN

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J. Hejtmánek, K. Knížek, M. Maryško, Z. Jirák, D. Sedmidubský, Z. Sofer, V. Peřina, H. Hardtdegen, C. Buchal
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 103, 07D107 (2008)
https://doi.org/10.1063/1.2830644
Published: January 2008
View articletitled, On the magnetic properties of Gd implanted GaN
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Journal Articles

Zeeman splitting in ballistic Ga In As ∕ In P split-gate quantum point contacts

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Th. Schäpers, V. A. Guzenko, H. Hardtdegen
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 122107 (2007)
https://doi.org/10.1063/1.2715106
Published: March 2007
View articletitled, Zeeman splitting in ballistic Ga In As ∕ In P split-gate quantum point contacts
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Journal Articles

Intra-atomic photoluminescence at 1.41 eV of substitutional Mn in GaMnN of high optical quality

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J. Zenneck, T. Niermann, D. Mai, M. Roever, M. Kocan, J. Malindretos, M. Seibt, A. Rizzi, N. Kaluza, H. Hardtdegen
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 063504 (2007)
https://doi.org/10.1063/1.2710342
Published: March 2007
View articletitled, Intra-atomic photoluminescence at 1.41 eV of substitutional Mn in GaMnN of high optical quality
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Journal Articles

Rashba effect in In Ga As ∕ In P parallel quantum wires

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V. A. Guzenko, J. Knobbe, H. Hardtdegen, Th. Schäpers, A. Bringer
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 032102 (2006)
https://doi.org/10.1063/1.2165279
Published: January 2006
View articletitled, Rashba effect in In Ga As ∕ In P parallel quantum wires
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Journal Articles

Weak antilocalization in a polarization-doped Al x Ga 1 − x N ∕ Ga N heterostructure with single subband occupation

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N. Thillosen, Th. Schäpers, N. Kaluza, H. Hardtdegen, V. A. Guzenko
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 022111 (2006)
https://doi.org/10.1063/1.2162871
Published: January 2006
View articletitled, Weak antilocalization in a polarization-doped Al x Ga 1 − x N ∕ Ga N heterostructure with single subband occupation
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