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Journal Articles

Power loss measurements in quasi-1D and quasi-2D systems in an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructure

C. Prasad, D. K. Ferry, H. H. Wieder

J. Vac. Sci. Technol. B 22, 2059–2062 (2004)

https://doi.org/10.1116/1.1768193

Published: August 2004

View article titled, Power loss measurements in quasi-1D and quasi-2D systems in an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructure

Journal Articles

Electron heating measurements in an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructure system

C. Prasad, D. K. Ferry, D. Vasileska, H. H. Wieder

J. Vac. Sci. Technol. B 21, 1936–1939 (2003)

https://doi.org/10.1116/1.1588644

Published: August 2003

View article titled, Electron heating measurements in an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructure system

Journal Articles

Surface and interface barriers of In x Ga 1−x As binary and ternary alloys

H. H. Wieder

J. Vac. Sci. Technol. B 21, 1915–1919 (2003)

https://doi.org/10.1116/1.1588646

Published: August 2003

View article titled, Surface and interface barriers of In x Ga 1−x As binary and ternary alloys

Journal Articles

Green’s function approach for transport calculation in a In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As modulation-doped heterostructure

D. Vasileska, C. Prasad, H. H. Wieder, D. K. Ferry

J. Vac. Sci. Technol. B 21, 1903–1907 (2003)

https://doi.org/10.1116/1.1588643

Published: August 2003

View article titled, Green’s function approach for transport calculation in a In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As modulation-doped heterostructure

Journal Articles

Green’s function approach for transport calculation in a In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As modulation-doped heterostructure

D. Vasileska, C. Prasad, H. H. Wieder, D. K. Ferry

J. Appl. Phys. 93, 3359–3363 (2003)

https://doi.org/10.1063/1.1555279

Published: March 2003

View article titled, Green’s function approach for transport calculation in a In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As modulation-doped heterostructure

Journal Articles

Surface and interface properties of In 0.8 Ga 0.2 As metal–insulator–semiconductor structures

H. H. Wieder, Huseyin Sari

J. Vac. Sci. Technol. B 20, 1759–1765 (2002)

https://doi.org/10.1116/1.1491537

Published: August 2002

View article titled, Surface and interface properties of In 0.8 Ga 0.2 As metal–insulator–semiconductor structures

Journal Articles

Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor

E. J. Miller, X. Z. Dang, H. H. Wieder, P. M. Asbeck, E. T. Yu, G. J. Sullivan, J. M. Redwing

J. Appl. Phys. 87, 8070–8073 (2000)

https://doi.org/10.1063/1.373499

Published: June 2000

View article titled, Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor

Journal Articles

DX centers in Al 0.37 Ga 0.63 As/GaAs and In 0.34 Al 0.66 As/In 0.36 Ga 0.64 As heterostructures

H. H. Wieder, Huseyin Sari

J. Vac. Sci. Technol. B 17, 1761–1766 (1999)

https://doi.org/10.1116/1.590822

Published: July 1999

View article titled, DX centers in Al 0.37 Ga 0.63 As/GaAs and In 0.34 Al 0.66 As/In 0.36 Ga 0.64 As heterostructures

Journal Articles

DX centers in In x Al 1−x As

Hüseyin Sari, H. H. Wieder

J. Appl. Phys. 85, 3380–3382 (1999)

https://doi.org/10.1063/1.369687

Published: March 1999

View article titled, DX centers in In x Al 1−x As

Journal Articles

Effects of GaAs substrate misorientation on strain relaxation in In x Ga 1−x As films and multilayers

R. S. Goldman, K. L. Kavanagh, H. H. Wieder, S. N. Ehrlich, R. M. Feenstra

J. Appl. Phys. 83, 5137–5149 (1998)

https://doi.org/10.1063/1.367331

Published: May 1998

View article titled, Effects of GaAs substrate misorientation on strain relaxation in In x Ga 1−x As films and multilayers

Journal Articles

Correlation of buffer strain relaxation modes with transport properties of two‐dimensional electron gases

R. S. Goldman, K. L. Kavanagh, H. H. Wieder, V. M. Robbins, S. N. Ehrlich, R. M. Feenstra

J. Appl. Phys. 80, 6849–6854 (1996)

https://doi.org/10.1063/1.363751

Published: December 1996

View article titled, Correlation of buffer strain relaxation modes with transport properties of two‐dimensional electron gases

Journal Articles

Evidence for the occupation of DX centers in In_0.29Al_0.71As

A. P. Young, H. H. Wieder

J. Vac. Sci. Technol. B 14, 2944–2947 (1996)

https://doi.org/10.1116/1.588939

Published: July 1996

View article titled, Evidence for the occupation of DX centers in In0.29Al0.71As

Journal Articles

Modulation‐doped In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructures grown on GaAs substrates using step‐graded In_xGa_1−xAs buffers

R. S. Goldman, K. L. Kavanagh, H. H. Wieder, S. N. Ehrlich

J. Vac. Sci. Technol. B 14, 3035–3039 (1996)

https://doi.org/10.1116/1.589060

Published: July 1996

View article titled, Modulation‐doped In0.53Ga0.47As/In0.52Al0.48As heterostructures grown on GaAs substrates using step‐graded InxGa1−xAs buffers

Journal Articles

Influence of surface and interface states on the electrical properties of an Al_0.2Ga_0.8As/In_0.18Ga_0.82As δ ‐modulation‐doped heterostructure

A. P. Young, H. H. Wieder

J. Vac. Sci. Technol. B 14, 2293–2296 (1996)

https://doi.org/10.1116/1.588923

Published: May 1996

View article titled, Influence of surface and interface states on the electrical properties of an Al0.2Ga0.8As/In0.18Ga0.82As δ ‐modulation‐doped heterostructure

Journal Articles

Strain‐compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators

X. B. Mei, K. K. Loi, H. H. Wieder, W. S. C. Chang, C. W. Tu

Appl. Phys. Lett. 68, 90–92 (1996)

https://doi.org/10.1063/1.116768

Published: January 1996

View article titled, Strain‐compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators

Journal Articles

Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces

R. S. Goldman, H. H. Wieder, K. L. Kavanagh

Appl. Phys. Lett. 67, 344–346 (1995)

https://doi.org/10.1063/1.115439

Published: July 1995

View article titled, Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces

Journal Articles

Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of In_xGa_1−xAs/GaAs

D. H. Rich, K. Rammohan, Y. Tang, H. T. Lin, R. S. Goldman, H. H. Wieder, K. L. Kavanagh

J. Vac. Sci. Technol. B 13, 1766–1772 (1995)

https://doi.org/10.1116/1.587810

Published: July 1995

View article titled, Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of InxGa1−xAs/GaAs

Journal Articles

Gate‐controlled modulation of charge transport in long‐channel, δ‐doped, heterojunction Hall‐bar structures

H. H. Wieder, R. S. Goldman, Jianhui Chen, A. P. Young

J. Vac. Sci. Technol. B 13, 1853–1858 (1995)

https://doi.org/10.1116/1.587824

Published: July 1995

View article titled, Gate‐controlled modulation of charge transport in long‐channel, δ‐doped, heterojunction Hall‐bar structures

Journal Articles

Consequences of DX centers on the charge distribution of double quantum well, δ ‐modulation‐doped heterostructures

A. P. Young, Jianhui Chen, H. H. Wieder

J. Vac. Sci. Technol. B 13, 685–688 (1995)

https://doi.org/10.1116/1.587942

Published: March 1995

View article titled, Consequences of DX centers on the charge distribution of double quantum well, δ ‐modulation‐doped heterostructures

Journal Articles

Study of μm‐scale spatial variations in strain of a compositionally step‐graded In_xGa_1−xAs/GaAs(001) heterostructure

K. Rammohan, D. H. Rich, R. S. Goldman, J. Chen, H. H. Wieder, K. L. Kavanagh

Appl. Phys. Lett. 66, 869–871 (1995)

https://doi.org/10.1063/1.113414

Published: February 1995

View article titled, Study of μm‐scale spatial variations in strain of a compositionally step‐graded InxGa1−xAs/GaAs(001) heterostructure

NARROW

Topics

Power loss measurements in quasi-1D and quasi-2D systems in an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructure

Electron heating measurements in an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructure system

Surface and interface barriers of In x Ga 1−x As binary and ternary alloys

Green’s function approach for transport calculation in a In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As modulation-doped heterostructure

Green’s function approach for transport calculation in a In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As modulation-doped heterostructure

Surface and interface properties of In 0.8 Ga 0.2 As metal–insulator–semiconductor structures

Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor

DX centers in Al 0.37 Ga 0.63 As/GaAs and In 0.34 Al 0.66 As/In 0.36 Ga 0.64 As heterostructures

DX centers in In x Al 1−x As

Effects of GaAs substrate misorientation on strain relaxation in In x Ga 1−x As films and multilayers

Correlation of buffer strain relaxation modes with transport properties of two‐dimensional electron gases

Evidence for the occupation of DX centers in In_0.29Al_0.71As

Modulation‐doped In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructures grown on GaAs substrates using step‐graded In_xGa_1−xAs buffers

Influence of surface and interface states on the electrical properties of an Al_0.2Ga_0.8As/In_0.18Ga_0.82As δ ‐modulation‐doped heterostructure

Strain‐compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators

Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces

Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of In_xGa_1−xAs/GaAs

Gate‐controlled modulation of charge transport in long‐channel, δ‐doped, heterojunction Hall‐bar structures

Consequences of DX centers on the charge distribution of double quantum well, δ ‐modulation‐doped heterostructures

Study of μm‐scale spatial variations in strain of a compositionally step‐graded In_xGa_1−xAs/GaAs(001) heterostructure

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