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1-20 of 103
H. H. Wieder
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Journal Articles
Power loss measurements in quasi-1D and quasi-2D systems in an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructure
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J. Vac. Sci. Technol. B 22, 2059–2062 (2004)
Published: August 2004
Journal Articles
Electron heating measurements in an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructure system
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J. Vac. Sci. Technol. B 21, 1936–1939 (2003)
Published: August 2003
Journal Articles
Surface and interface barriers of In x Ga 1−x As binary and ternary alloys
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J. Vac. Sci. Technol. B 21, 1915–1919 (2003)
Published: August 2003
Journal Articles
Green’s function approach for transport calculation in a In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As modulation-doped heterostructure
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J. Vac. Sci. Technol. B 21, 1903–1907 (2003)
Published: August 2003
Journal Articles
Green’s function approach for transport calculation in a In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As modulation-doped heterostructure
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Journal:
Journal of Applied Physics
J. Appl. Phys. 93, 3359–3363 (2003)
Published: March 2003
Journal Articles
Surface and interface properties of In 0.8 Ga 0.2 As metal–insulator–semiconductor structures
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J. Vac. Sci. Technol. B 20, 1759–1765 (2002)
Published: August 2002
Journal Articles
Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor
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Journal:
Journal of Applied Physics
J. Appl. Phys. 87, 8070–8073 (2000)
Published: June 2000
Journal Articles
DX centers in Al 0.37 Ga 0.63 As/GaAs and In 0.34 Al 0.66 As/In 0.36 Ga 0.64 As heterostructures
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J. Vac. Sci. Technol. B 17, 1761–1766 (1999)
Published: July 1999
Journal Articles
DX centers in In x Al 1−x As
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Journal:
Journal of Applied Physics
J. Appl. Phys. 85, 3380–3382 (1999)
Published: March 1999
Journal Articles
Effects of GaAs substrate misorientation on strain relaxation in In x Ga 1−x As films and multilayers
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Journal:
Journal of Applied Physics
J. Appl. Phys. 83, 5137–5149 (1998)
Published: May 1998
Journal Articles
Correlation of buffer strain relaxation modes with transport properties of two‐dimensional electron gases
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Journal:
Journal of Applied Physics
J. Appl. Phys. 80, 6849–6854 (1996)
Published: December 1996
Journal Articles
Evidence for the occupation of DX centers in In0.29Al0.71As
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J. Vac. Sci. Technol. B 14, 2944–2947 (1996)
Published: July 1996
Journal Articles
Modulation‐doped In0.53Ga0.47As/In0.52Al0.48As heterostructures grown on GaAs substrates using step‐graded InxGa1−xAs buffers
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J. Vac. Sci. Technol. B 14, 3035–3039 (1996)
Published: July 1996
Journal Articles
Influence of surface and interface states on the electrical properties of an Al0.2Ga0.8As/In0.18Ga0.82As δ ‐modulation‐doped heterostructure
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J. Vac. Sci. Technol. B 14, 2293–2296 (1996)
Published: May 1996
Journal Articles
Strain‐compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 68, 90–92 (1996)
Published: January 1996
Journal Articles
Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 67, 344–346 (1995)
Published: July 1995
Journal Articles
Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of InxGa1−xAs/GaAs
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J. Vac. Sci. Technol. B 13, 1766–1772 (1995)
Published: July 1995
Journal Articles
Gate‐controlled modulation of charge transport in long‐channel, δ‐doped, heterojunction Hall‐bar structures
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J. Vac. Sci. Technol. B 13, 1853–1858 (1995)
Published: July 1995
Journal Articles
Consequences of DX centers on the charge distribution of double quantum well, δ ‐modulation‐doped heterostructures
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J. Vac. Sci. Technol. B 13, 685–688 (1995)
Published: March 1995
Journal Articles
Study of μm‐scale spatial variations in strain of a compositionally step‐graded InxGa1−xAs/GaAs(001) heterostructure
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 66, 869–871 (1995)
Published: February 1995
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