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Journal Articles

Band alignment and band bending at α-Ga2O3/ZnO n-n isotype hetero-interface

X. H. Chen, Y. T. Chen, F.-F. Ren, S. L. Gu, H. H. Tan, C. Jagadish, J. D. Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 202101 (2019)
https://doi.org/10.1063/1.5126325
Published: November 2019
View article titled, Band alignment and band bending at <em>α</em>-Ga<sub>2</sub>O<sub>3</sub>/ZnO n-n isotype hetero-interface
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Includes: Supplementary data
Journal Articles

On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire

T. C. Ma, X. H. Chen, Y. Kuang, L. Li, J. Li, F. Kremer, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, H. H. Tan, C. Jagadish, J. D. Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 182101 (2019)
https://doi.org/10.1063/1.5120554
Published: October 2019
View article titled, On the origin of dislocation generation and annihilation in <em>α</em> -Ga<sub>2</sub>O<sub>3</sub> epilayers on sapphire
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Journal Articles

Quantum confinement of excitons in wurtzite InP nanowires

K. Pemasiri, H. E. Jackson, L. M. Smith, B. M. Wong, S. Paiman, Q. Gao, H. H. Tan, C. Jagadish
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 194306 (2015)
https://doi.org/10.1063/1.4921109
Published: May 2015
View article titled, Quantum confinement of excitons in wurtzite InP nanowires
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Journal Articles

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Z. B. Chen, W. Lei, B. Chen, Y. B. Wang, X. Z. Liao, H. H. Tan, J. Zou, S. P. Ringer, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 022108 (2014)
https://doi.org/10.1063/1.4859915
Published: January 2014
View article titled, Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
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Journal Articles

A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination

G. Jolley, L. Faraone, L. Fu, H. F. Lu, H. H. Tan, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 213903 (2013)
https://doi.org/10.1063/1.4807506
Published: May 2013
View article titled, A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination
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Journal Articles

Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique

W. Lei, H. H. Tan, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 033111 (2013)
https://doi.org/10.1063/1.4789513
Published: January 2013
View article titled, Engineering the composition, morphology, and optical properties of InAsSb nanostructures <em>via</em> graded growth technique
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Journal Articles

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires

N. Jiang, P. Parkinson, Q. Gao, S. Breuer, H. H. Tan, J. Wong-Leung, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 023111 (2012)
https://doi.org/10.1063/1.4735002
Published: July 2012
View article titled, Long minority carrier lifetime in Au-catalyzed GaAs/Al<sub>x</sub>Ga<sub>1−x</sub>As core-shell nanowires
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Journal Articles

The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors

G. Jolley, I. McKerracher, L. Fu, H. H. Tan, C. Jagadish
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 123719 (2012)
https://doi.org/10.1063/1.4729833
Published: June 2012
View article titled, The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
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Journal Articles

Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires

M. A. Fickenscher, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, J. H. Kang, S. Paiman, Q. Gao, H. H. Tan, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 263110 (2011)
https://doi.org/10.1063/1.3671367
Published: December 2011
View article titled, Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires
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Includes: Supplementary data
Journal Articles

Direct Measure of Strain and Electronic Structure in GaAs/GaP Core‐Shell Nanowires

H. E. Jackson, M. Montazeri, M. Fickenscher, L. M. Smith, J. M. Yarrison‐Rice, J. H. Kang, Q. Gao, H. H. Tan, C. Jagadish, Y. Guo, J. Zou, M. E. Pistol, C. E. Pryor
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 477–478 (2011)
https://doi.org/10.1063/1.3666461
Published: December 2011
View article titled, Direct Measure of Strain and Electronic Structure in GaAs/GaP Core‐Shell Nanowires
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Journal Articles

Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy

H. E. Jackson, S. Perera, K. Pemasiri, L. M. Smith, J. Yarrison‐Rice, J. H. Kang, Q. Gao, H. H. Tan, C. Jagadish, Y. Guo, J. Zou
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 481–482 (2011)
https://doi.org/10.1063/1.3666463
Published: December 2011
View article titled, Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy
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Journal Articles

Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure

W. Lei, H. H. Tan, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 193110 (2011)
https://doi.org/10.1063/1.3659695
Published: November 2011
View article titled, Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures <em>via</em> Sb exposure
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Journal Articles

Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells

J. A. Davis, C. R. Hall, L. V. Dao, K. A. Nugent, H. M. Quiney, H. H. Tan, C. Jagadish
Journal: The Journal of Chemical Physics
J. Chem. Phys. 135, 044510 (2011)
https://doi.org/10.1063/1.3613679
Published: July 2011
View article titled, Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells
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Includes: Supplementary data
Journal Articles

Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

Rashmi Menon, Vinay Gupta, H. H. Tan, K. Sreenivas, C. Jagadish
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 064905 (2011)
https://doi.org/10.1063/1.3552928
Published: March 2011
View article titled, Origin of stress in radio frequency magnetron sputtered zinc oxide thin films
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Journal Articles

Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition

W. Lei, H. H. Tan, C. Jagadish, Q. J. Ren, J. Lu, Z. H. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 223108 (2010)
https://doi.org/10.1063/1.3522889
Published: December 2010
View article titled, Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition
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Journal Articles

Third generation biosensing matrix based on Fe-implanted ZnO thin film

Shibu Saha, Vinay Gupta, K. Sreenivas, H. H. Tan, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 133704 (2010)
https://doi.org/10.1063/1.3496456
Published: October 2010
View article titled, Third generation biosensing matrix based on Fe-implanted ZnO thin film
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Journal Articles

Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy

T. Hakkarainen, O. Douhéret, S. Anand, L. Fu, H. H. Tan, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 041106 (2010)
https://doi.org/10.1063/1.3467138
Published: July 2010
View article titled, Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy
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Journal Articles

Probing valence band structure in wurtzite InP nanowires using excitation spectroscopy

S. Perera, K. Pemasiri, M. A. Fickenscher, H. E. Jackson, L. M. Smith, J. Yarrison-Rice, S. Paiman, Q. Gao, H. H. Tan, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 023106 (2010)
https://doi.org/10.1063/1.3463036
Published: July 2010
View article titled, Probing valence band structure in wurtzite InP nanowires using excitation spectroscopy
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Journal Articles

Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer

W. Lei, H. H. Tan, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 213102 (2010)
https://doi.org/10.1063/1.3436562
Published: May 2010
View article titled, Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
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Journal Articles

Using graded barriers to control the optical properties of ZnO / Zn 0.7 Mg 0.3 O quantum wells with an intrinsic internal electric field

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, J. A. Davis
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 193117 (2010)
https://doi.org/10.1063/1.3428430
Published: May 2010
View article titled, Using graded barriers to control the optical properties of ZnO / Zn 0.7 Mg 0.3 O quantum wells with an intrinsic internal electric field
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