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Journal Articles

Spectrometric analysis of silicon nitride films deposited by low-temperature liquid-source CVD

R. Kou, N. Yamamoto, G. Fujii, T. Aihara, T. Tsuchizawa, A. Ishizawa, K. Hitachi, H. Gotoh, M. Ukibe, K. Yamada
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 133101 (2019)
https://doi.org/10.1063/1.5114675
Published: October 2019
View articletitled, Spectrometric analysis of silicon nitride films deposited by low-temperature liquid-source CVD
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Journal Articles

Characterization of longitudinal acoustic phonons in InGaAsP multiple quantum wells by asynchronous optical sampling

K. Hitachi, M. Someya, A. Ishizawa, T. Nishikawa, H. Gotoh
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 201102 (2018)
https://doi.org/10.1063/1.5041475
Published: November 2018
View articletitled, Characterization of longitudinal acoustic phonons in InGaAsP multiple quantum wells by asynchronous optical sampling
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Includes: Supplementary data
Journal Articles

Reduced pulse energy for frequency comb offset stabilization with a dual-pitch periodically poled lithium niobate ridge waveguide

K. Hitachi, K. Hara, O. Tadanaga, A. Ishizawa, T. Nishikawa, H. Gotoh
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 241107 (2017)
https://doi.org/10.1063/1.4986444
Published: June 2017
View articletitled, Reduced pulse energy for frequency comb offset stabilization with a dual-pitch periodically poled lithium niobate ridge waveguide
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Journal Articles

Frequency stabilization of an Er-doped fiber laser with a collinear 2f-to-3f self-referencing interferometer

K. Hitachi, A. Ishizawa, O. Tadanaga, T. Nishikawa, H. Mashiko, T. Sogawa, H. Gotoh
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 231106 (2015)
https://doi.org/10.1063/1.4922553
Published: June 2015
View articletitled, Frequency stabilization of an Er-doped fiber laser with a collinear 2f-to-3f self-referencing interferometer
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Journal Articles

Population dynamics in epitaxial Er2O3 thin films grown on Si(111)

T. Tawara, H. Omi, T. Hozumi, R. Kaji, S. Adachi, H. Gotoh, T. Sogawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 241918 (2013)
https://doi.org/10.1063/1.4812294
Published: June 2013
View articletitled, Population dynamics in epitaxial Er2O3 thin films grown on Si(111)
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Journal Articles

Fabrication and physical properties of double perovskite SrLaVMoO6 thin films

H. Matsushima, H. Gotoh, T. Miyawaki, K. Ueda, H. Asano
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 109, 07E321 (2011)
https://doi.org/10.1063/1.3556898
Published: April 2011
View articletitled, Fabrication and physical properties of double perovskite SrLaVMoO6 thin films
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Journal Articles

Full-color electroluminescence from ZnO-based heterojunction diodes

A. Nakamura, T. Ohashi, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo, H. Gotoh
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 093512 (2007)
https://doi.org/10.1063/1.2709913
Published: March 2007
View articletitled, Full-color electroluminescence from ZnO-based heterojunction diodes
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Journal Articles

Effects of nonradiative centers on localized excitons in InGaN quantum well structures

H. Gotoh, T. Akasaka, T. Tawara, Y. Kobayashi, T. Makimoto, H. Nakano
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 222110 (2006)
https://doi.org/10.1063/1.2399347
Published: November 2006
View articletitled, Effects of nonradiative centers on localized excitons in InGaN quantum well structures
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Journal Articles

Optical characteristics of single In As ∕ In Ga As P ∕ In P ( 100 ) quantum dots emitting at 1.55 μ m

N. I. Cade, H. Gotoh, H. Kamada, H. Nakano, S. Anantathanasarn, R. Nötzel
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 181113 (2006)
https://doi.org/10.1063/1.2378403
Published: November 2006
View articletitled, Optical characteristics of single In As ∕ In Ga As P ∕ In P ( 100 ) quantum dots emitting at 1.55 μ m
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Journal Articles

Vertical GaP nanowires arranged at atomic steps on Si(111) substrates

K. Tateno, H. Hibino, H. Gotoh, H. Nakano
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 033114 (2006)
https://doi.org/10.1063/1.2227800
Published: July 2006
View articletitled, Vertical GaP nanowires arranged at atomic steps on Si(111) substrates
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Journal Articles

Charged exciton emission at 1.3 μ m from single InAs quantum dots grown by metalorganic chemical vapor deposition

N. I. Cade, H. Gotoh, H. Kamada, T. Tawara, T. Sogawa, H. Nakano, H. Okamoto
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 172101 (2005)
https://doi.org/10.1063/1.2093927
Published: October 2005
View articletitled, Charged exciton emission at 1.3 μ m from single InAs quantum dots grown by metalorganic chemical vapor deposition
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Journal Articles

Terahertz wave detection performance of photoconductive antennas: Role of antenna structure and gate pulse intensity

R. Yano, H. Gotoh, Y. Hirayama, S. Miyashita, Y. Kadoya, T. Hattori
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 103103 (2005)
https://doi.org/10.1063/1.1905792
Published: May 2005
View articletitled, Terahertz wave detection performance of photoconductive antennas: Role of antenna structure and gate pulse intensity
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Journal Articles

Positional control of self-assembled quantum dots by patterning nanoscale SiN islands

H. Gotoh, H. Kamada, T. Saitoh, S. Shigemori, J. Temmyo
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 2836–2838 (2004)
https://doi.org/10.1063/1.1804251
Published: October 2004
View articletitled, Positional control of self-assembled quantum dots by patterning nanoscale SiN islands
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Journal Articles

Systematic pump-probe terahertz wave emission spectroscopy of a photoconductive antenna fabricated on low-temperature grown GaAs

R. Yano, H. Gotoh, Y. Hirayama, S. Miyashita
Journal: Journal of Applied Physics
J. Appl. Phys. 96, 3635–3638 (2004)
https://doi.org/10.1063/1.1786667
Published: October 2004
View articletitled, Systematic pump-probe terahertz wave emission spectroscopy of a photoconductive antenna fabricated on low-temperature grown GaAs
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Journal Articles

GaAs ∕ AlGaAs nanowires capped with AlGaAs layers on GaAs ( 311 ) B substrates

K. Tateno, H. Gotoh, Y. Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 1808–1810 (2004)
https://doi.org/10.1063/1.1789234
Published: September 2004
View articletitled, GaAs ∕ AlGaAs nanowires capped with AlGaAs layers on GaAs ( 311 ) B substrates
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Journal Articles

Low-frequency spectral enhancement of THz electromagnetic waves emitted from InAs surface with increased excitation intensity

R. Yano, H. Gotoh, Y. Hirayama, S. Miyashita, Y. Kadoya, K. Kusuda, M. Yamanishi
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 2141–2145 (2004)
https://doi.org/10.1063/1.1642733
Published: February 2004
View articletitled, Low-frequency spectral enhancement of THz electromagnetic waves emitted from InAs surface with increased excitation intensity
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Journal Articles

Piezoelectric effects on photoluminescence properties in 10-nm-thick InGaN quantum wells

H. Gotoh, T. Tawara, Y. Kobayashi, N. Kobayashi, T. Saitoh
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 4791–4793 (2003)
https://doi.org/10.1063/1.1632539
Published: December 2003
View articletitled, Piezoelectric effects on photoluminescence properties in 10-nm-thick InGaN quantum wells
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Journal Articles

Electric-field-induced anisotropy of excitonic optical properties in semiconductor quantum dots

H. Gotoh, H. Kamada, T. Saitoh, H. Ando, J. Temmyo
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 342–347 (2003)
https://doi.org/10.1063/1.1578524
Published: July 2003
View articletitled, Electric-field-induced anisotropy of excitonic optical properties in semiconductor quantum dots
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Journal Articles

Electromagnetic enhancement effect in scanning tunneling microscope light emission from GaAs

Y. Uehara, H. Gotoh, R. Arafune, S. Ushioda
Journal: Journal of Applied Physics
J. Appl. Phys. 93, 3784–3788 (2003)
https://doi.org/10.1063/1.1554473
Published: April 2003
View articletitled, Electromagnetic enhancement effect in scanning tunneling microscope light emission from GaAs
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Journal Articles

Effect of electron–hole interaction on electron spin relaxation in GaAs/AlGaAs quantum wells at room temperature

H. Gotoh, H. Ando, T. Sogawa, H. Kamada, T. Kagawa, H. Iwamura
Journal: Journal of Applied Physics
J. Appl. Phys. 87, 3394–3398 (2000)
https://doi.org/10.1063/1.372356
Published: April 2000
View articletitled, Effect of electron–hole interaction on electron spin relaxation in GaAs/AlGaAs quantum wells at room temperature
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