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Journal Articles

Spin and recombination dynamics of excitons and free electrons in p-type GaAs: Effect of carrier density

F. Cadiz, D. Lagarde, P. Renucci, D. Paget, T. Amand, H. Carrère, A. C. H. Rowe, S. Arscott
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 082101 (2017)
https://doi.org/10.1063/1.4977003
Published: February 2017
View article titled, Spin and recombination dynamics of excitons and free electrons in p-type GaAs: Effect of carrier density
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Includes: Supplementary data
Journal Articles

Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

S. Azaizia, A. Balocchi, H. Carrère, P. Renucci, T. Amand, A. Arnoult, C. Fontaine, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 082103 (2016)
https://doi.org/10.1063/1.4942600
Published: February 2016
View article titled, Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells
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Journal Articles

Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

J.-P. Gauthier, C. Robert, S. Almosni, Y. Léger, M. Perrin, J. Even, A. Balocchi, H. Carrère, X. Marie, C. Cornet, O. Durand
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 243111 (2014)
https://doi.org/10.1063/1.4904939
Published: December 2014
View article titled, Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots
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Journal Articles

Fabrication of an InGaAs spin filter by implantation of paramagnetic centers

C. T. Nguyen, A. Balocchi, D. Lagarde, T. T. Zhang, H. Carrère, S. Mazzucato, P. Barate, E. Galopin, J. Gierak, E Bourhis, J. C. Harmand, T. Amand, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 052403 (2013)
https://doi.org/10.1063/1.4816970
Published: July 2013
View article titled, Fabrication of an InGaAs spin filter by implantation of paramagnetic centers
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Journal Articles

Electron spin dynamics and g-factor in GaAsBi

S. Mazzucato, T. T. Zhang, H. Carrère, D. Lagarde, P. Boonpeng, A. Arnoult, G. Lacoste, A. Balocchi, T. Amand, C. Fontaine, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 252107 (2013)
https://doi.org/10.1063/1.4812660
Published: June 2013
View article titled, Electron spin dynamics and g-factor in GaAsBi
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Journal Articles

Large optical bandwidth and polarization insensitive semiconductor optical amplifiers using strained InGaAsP quantum wells

H. Carrère, V. G. Truong, X. Marie, R. Brenot, G. De Valicourt, F. Lelarge, T. Amand
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 121101 (2010)
https://doi.org/10.1063/1.3484151
Published: September 2010
View article titled, Large optical bandwidth and polarization insensitive semiconductor optical amplifiers using strained InGaAsP quantum wells
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Journal Articles

Erratum: “Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature” [Appl. Phys. Lett. 95, 241104 (2009)]

F. Zhao, A. Balocchi, A. Kunold, J. Carrey, H. Carrère, T. Amand, N. Ben Abdallah, J. C. Harmand, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 239904 (2010)
https://doi.org/10.1063/1.3449140
Published: June 2010
View article titled, Erratum: “Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature” [Appl. Phys. Lett. 95, 241104 (2009)]
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Journal Articles

Electron spin filtering by thin GaNAs/GaAs multiquantum wells

Y. Puttisong, X. J. Wang, I. A. Buyanova, H. Carrére, F. Zhao, A. Balocchi, X. Marie, C. W. Tu, W. M. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 052104 (2010)
https://doi.org/10.1063/1.3299015
Published: February 2010
View article titled, Electron spin filtering by thin GaNAs/GaAs multiquantum wells
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Journal Articles

Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature

F. Zhao, A. Balocchi, A. Kunold, J. Carrey, H. Carrère, T. Amand, N. Ben Abdallah, J. C. Harmand, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 241104 (2009)
https://doi.org/10.1063/1.3273393
Published: December 2009
View article titled, Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature
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Journal Articles

Electrical spin injection into p -doped quantum dots through a tunnel barrier

L. Lombez, P. Renucci, P. F. Braun, H. Carrère, X. Marie, T. Amand, B. Urbaszek, J. L. Gauffier, P. Gallo, T. Camps, A. Arnoult, C. Fontaine, C. Deranlot, R. Mattana, H. Jaffrès, J.-M. George, P. H. Binh
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 081111 (2007)
https://doi.org/10.1063/1.2709889
Published: February 2007
View article titled, Electrical spin injection into p -doped quantum dots through a tunnel barrier
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Journal Articles

Optical gain of In Ga As N ∕ In P quantum wells for laser applications

H. Carrère, X. Marie, L. Lombez, T. Amand
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 181115 (2006)
https://doi.org/10.1063/1.2372769
Published: November 2006
View article titled, Optical gain of In Ga As N ∕ In P quantum wells for laser applications
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Journal Articles

Spin dynamics in dilute nitride semiconductors at room temperature

L. Lombez, P.-F. Braun, H. Carrère, B. Urbaszek, P. Renucci, T. Amand, X. Marie, J. C. Harmand, V. K. Kalevich
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 252115 (2005)
https://doi.org/10.1063/1.2150252
Published: December 2005
View article titled, Spin dynamics in dilute nitride semiconductors at room temperature
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Journal Articles

Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys

J. Plaza, J. L. Castaño, B. J. García, H. Carrère, E. Bedel-Pereira
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 121918 (2005)
https://doi.org/10.1063/1.1891293
Published: March 2005
View article titled, Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys
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Journal Articles

Comparison of the optical gain of InGaAsN quantum-well lasers with GaAs or GaAsP barriers

H. Carrère, X. Marie, J. Barrau, T. Amand
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 071116 (2005)
https://doi.org/10.1063/1.1864253
Published: February 2005
View article titled, Comparison of the optical gain of InGaAsN quantum-well lasers with GaAs or GaAsP barriers
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Journal Articles

Influence of radio frequency plasma cell conditions on the incorporation of nitrogen into GaAsN and GaInAsN

H. Carrère, A. Arnoult, E. Bedel-Pereira, A. Ricard
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 2448–2453 (2004)
https://doi.org/10.1116/1.1788681
Published: October 2004
View article titled, Influence of radio frequency plasma cell conditions on the incorporation of nitrogen into GaAsN and GaInAsN
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Journal Articles

Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission

R. J. Potter, N. Balkan, H. Carrère, A. Arnoult, E. Bedel, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 3400–3402 (2003)
https://doi.org/10.1063/1.1576511
Published: May 2003
View article titled, Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission
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Journal Articles

In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells

S. Mazzucato, N. Balkan, A. Teke, A. Erol, R. J. Potter, M. C. Arikan, X. Marie, C. Fontaine, H. Carrère, E. Bedel, G. Lacoste
Journal: Journal of Applied Physics
J. Appl. Phys. 93, 2440–2448 (2003)
https://doi.org/10.1063/1.1541104
Published: March 2003
View article titled, In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
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