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Guido Groeseneken
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Journal Articles

Phonon-assisted tunneling in direct-bandgap semiconductors

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Mazharuddin Mohammed, Anne S. Verhulst, Devin Verreck, Maarten L. Van de Put, Wim Magnus, Bart Sorée, Guido Groeseneken
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 015701 (2019)
https://doi.org/10.1063/1.5044256
Published: January 2019
View articletitled, Phonon-assisted tunneling in direct-bandgap semiconductors
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Journal Articles

Self-consistent procedure including envelope function normalization for full-zone Schrödinger-Poisson problems with transmitting boundary conditions

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Devin Verreck, Anne S. Verhulst, Maarten L. Van de Put, Bart Sorée, Wim Magnus, Nadine Collaert, Anda Mocuta, Guido Groeseneken
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 204501 (2018)
https://doi.org/10.1063/1.5047087
Published: November 2018
View articletitled, Self-consistent procedure including envelope function normalization for full-zone Schrödinger-Poisson problems with transmitting boundary conditions
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Journal Articles

Thermal stability analysis and modelling of advanced perpendicular magnetic tunnel junctions

Open Access
Simon Van Beek, Koen Martens, Philippe Roussel, Yueh Chang Wu, Woojin Kim, Siddharth Rao, Johan Swerts, Davide Crotti, Dimitri Linten, Gouri Sankar Kar, Guido Groeseneken
Journal: AIP Advances
Series: Magnetism and Magnetic Materials
AIP Advances 8, 055909 (2018)
https://doi.org/10.1063/1.5007690
Published: December 2017
View articletitled, Thermal stability analysis and modelling of advanced perpendicular magnetic tunnel junctions
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Journal Articles

Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2

Open Access
Bart F. Vermeulen, Jackson Wu, Johan Swerts, Sebastien Couet, Iuliana P. Radu, Guido Groeseneken, Christophe Detavernier, Johanna K. Jochum, Margriet Van Bael, Kristiaan Temst, Amit Shukla, Shinji Miwa, Yoshishige Suzuki, Koen Martens
Journal: AIP Advances
Series: Magnetism and Magnetic Materials
AIP Advances 7, 055933 (2017)
https://doi.org/10.1063/1.4978007
Published: March 2017
View articletitled, Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2
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Journal Articles

Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides

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Mazharuddin Mohammed, Anne S. Verhulst, Devin Verreck, Maarten Van de Put, Eddy Simoen, Bart Sorée, Ben Kaczer, Robin Degraeve, Anda Mocuta, Nadine Collaert, Aaron Thean, Guido Groeseneken
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 245704 (2016)
https://doi.org/10.1063/1.4972482
Published: December 2016
View articletitled, Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides
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Journal Articles

Perpendicular magnetic anisotropy of Co\Pt bilayers on ALD HfO2

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Bart F. Vermeulen, Jackson Wu, Johan Swerts, Sebastien Couet, Dimitri Linten, Iuliana P Radu, Kristiaan Temst, Geert Rampelberg, Christophe Detavernier, Guido Groeseneken, Koen Martens
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 163903 (2016)
https://doi.org/10.1063/1.4966121
Published: October 2016
View articletitled, Perpendicular magnetic anisotropy of Co\Pt bilayers on ALD HfO2
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Journal Articles

Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors

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Devin Verreck, Anne S. Verhulst, Maarten Van de Put, Bart Sorée, Wim Magnus, Anda Mocuta, Nadine Collaert, Aaron Thean, Guido Groeseneken
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 134502 (2015)
https://doi.org/10.1063/1.4931890
Published: October 2015
View articletitled, Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors
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Journal Articles

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

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Tian-Li Wu, Denis Marcon, Benoit Bakeroot, Brice De Jaeger, H. C. Lin, Jacopo Franco, Steve Stoffels, Marleen Van Hove, Robin Roelofs, Guido Groeseneken, Stefaan Decoutere
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 093507 (2015)
https://doi.org/10.1063/1.4930076
Published: September 2015
View articletitled, Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
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Journal Articles

Erratum: “Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic” [Appl. Phys. Lett. 105 , 243506 (2014)]

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Devin Verreck, Anne S. Verhulst, Bart Sorée, Nadine Collaert, Anda Mocuta, Aaron Thean, Guido Groeseneken
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 049902 (2015)
https://doi.org/10.1063/1.4906935
Published: January 2015
View articletitled, Erratum: “Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic” [Appl. Phys. Lett. 105 , 243506 (2014)]
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Journal Articles

Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic

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Devin Verreck, Anne S. Verhulst, Bart Sorée, Nadine Collaert, Anda Mocuta, Aaron Thean, Guido Groeseneken
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 243506 (2014)
https://doi.org/10.1063/1.4904712
Published: December 2014
View articletitled, Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic
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Journal Articles

InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models

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Quentin Smets, Devin Verreck, Anne S. Verhulst, Rita Rooyackers, Clément Merckling, Maarten Van De Put, Eddy Simoen, Wilfried Vandervorst, Nadine Collaert, Voon Y. Thean, Bart Sorée, Guido Groeseneken, Marc M. Heyns
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 184503 (2014)
https://doi.org/10.1063/1.4875535
Published: May 2014
View articletitled, InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models
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Journal Articles

Quantum mechanical solver for confined heterostructure tunnel field-effect transistors

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Devin Verreck, Maarten Van de Put, Bart Sorée, Anne S. Verhulst, Wim Magnus, William G. Vandenberghe, Nadine Collaert, Aaron Thean, Guido Groeseneken
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 053706 (2014)
https://doi.org/10.1063/1.4864128
Published: February 2014
View articletitled, Quantum mechanical solver for confined heterostructure tunnel field-effect transistors
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Journal Articles

Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors

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Jae Woo Lee, Yuichiro Sasaki, Moon Ju Cho, Mitsuhiro Togo, Guillaume Boccardi, Romain Ritzenthaler, Geert Eneman, Thomas Chiarella, Stephan Brus, Naoto Horiguchi, Guido Groeseneken, Aaron Thean
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 223508 (2013)
https://doi.org/10.1063/1.4809755
Published: June 2013
View articletitled, Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors
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Journal Articles

Filament observation in metal-oxide resistive switching devices

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Umberto Celano, Yang Yin Chen, Dirk J. Wouters, Guido Groeseneken, Malgorzata Jurczak, Wilfried Vandervorst
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 121602 (2013)
https://doi.org/10.1063/1.4798525
Published: March 2013
View articletitled, Filament observation in metal-oxide resistive switching devices
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Journal Articles

1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

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Jae Woo Lee, Moon ju Cho, Eddy Simoen, Romain Ritzenthaler, Mitsuhiro Togo, Guillaume Boccardi, Jerome Mitard, Lars-Åke Ragnarsson, Thomas Chiarella, Anabela Veloso, Naoto Horiguchi, Aaron Thean, Guido Groeseneken
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 073503 (2013)
https://doi.org/10.1063/1.4793306
Published: February 2013
View articletitled, 1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
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Journal Articles

Figure of merit for and identification of sub-60 mV/decade devices

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William G. Vandenberghe, Anne S. Verhulst, Bart Sorée, Wim Magnus, Guido Groeseneken, Quentin Smets, Marc Heyns, Massimo V. Fischetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 013510 (2013)
https://doi.org/10.1063/1.4773521
Published: January 2013
View articletitled, Figure of merit for and identification of sub-60 mV/decade devices
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Journal Articles

Toward a streamlined projection of small device bias temperature instability lifetime distributions

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María Toledano-Luque, Ben Kaczer, Tibor Grasser, Philippe J. Roussel, Jacopo Franco, Guido Groeseneken
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 01A114 (2013)
https://doi.org/10.1116/1.4772587
Published: December 2012
View articletitled, Toward a streamlined projection of small device bias temperature instability lifetime distributions
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Journal Articles

Spectroscopic study of polysilicon traps by means of fast capacitance transients

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Maria Toledano-Luque, Baojun Tang, Robin Degraeve, Ben Kaczer, Eddy Simoen, Jan Van Houdt, Guido Groeseneken
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 01A110 (2013)
https://doi.org/10.1116/1.4768682
Published: December 2012
View articletitled, Spectroscopic study of polysilicon traps by means of fast capacitance transients
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Journal Articles

A model determining optimal doping concentration and material’s band gap of tunnel field-effect transistors

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William G. Vandenberghe, Anne S. Verhulst, Kuo-Hsing Kao, Kristin De Meyer, Bart Sorée, Wim Magnus, Guido Groeseneken
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 193509 (2012)
https://doi.org/10.1063/1.4714544
Published: May 2012
View articletitled, A model determining optimal doping concentration and material’s band gap of tunnel field-effect transistors
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Journal Articles

Drain voltage dependent analytical model of tunnel field-effect transistors

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Anne S. Verhulst, Daniele Leonelli, Rita Rooyackers, Guido Groeseneken
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 024510 (2011)
https://doi.org/10.1063/1.3609064
Published: July 2011
View articletitled, Drain voltage dependent analytical model of tunnel field-effect transistors
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