1-12 of 12
Guangwei Xu
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes

Jinyang Liu, Zhao Han, Lei Ren, Xiao Yang, Guangwei Xu, Weibing Hao, Xiaolong Zhao, Shu Yang, Di Lu, Yuncheng Han, Xiaohu Hou, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112106 (2023)
https://doi.org/10.1063/5.0161934
Published: September 2023
View article titled, Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> power diodes
Open the PDF for Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> power diodes in another window
Journal Articles

Simulation studies of floating field plate in β-Ga2O3 power devices and modules

Zhao Han, Guangwei Xu, Xueqiang Xiang, Weibing Hao, Yuanbiao Li, Xuanze Zhou, Xiaobing Yan, Shibing Long
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053102 (2023)
https://doi.org/10.1116/6.0002650
Published: July 2023
View article titled, Simulation studies of floating field plate in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power devices and modules
Open the PDF for Simulation studies of floating field plate in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power devices and modules in another window
Journal Articles

A core drain current model for β-Ga2O3 power MOSFETs based on surface potential

Kai Zhou, Songming Miao, Xuanze Zhou, Guangwei Xu, Lingfei Wang, Shibing Long
Journal: AIP Advances
AIP Advances 13, 015202 (2023)
https://doi.org/10.1063/5.0134215
Published: January 2023
View article titled, A core drain current model for <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power MOSFETs based on surface potential
Open the PDF for A core drain current model for <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power MOSFETs based on surface potential in another window
Journal Articles

Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing

Xuanze Zhou, Yongjian Ma, Guangwei Xu, Qi Liu, Jinyang Liu, Qiming He, Xiaolong Zhao, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 223501 (2022)
https://doi.org/10.1063/5.0130292
Published: November 2022
View article titled, Enhancement-mode <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> U-shaped gate trench vertical MOSFET realized by oxygen annealing
Open the PDF for Enhancement-mode <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> U-shaped gate trench vertical MOSFET realized by oxygen annealing in another window
Journal Articles

Hysteresis-free Ga2O3 solar-blind phototransistor modulated from photoconduction to photogating effect

Pengju Tan, Yanni Zou, Xiaolong Zhao, Xiaohu Hou, Zhongfang Zhang, Mengfan Ding, Shunjie Yu, Xiaolan Ma, Guangwei Xu, Qin Hu, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 071106 (2022)
https://doi.org/10.1063/5.0078904
Published: February 2022
View article titled, Hysteresis-free Ga<sub>2</sub>O<sub>3</sub> solar-blind phototransistor modulated from photoconduction to photogating effect
Open the PDF for Hysteresis-free Ga<sub>2</sub>O<sub>3</sub> solar-blind phototransistor modulated from photoconduction to photogating effect in another window
Journal Articles

Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles

Haochen Zhang, Yue Sun, Kang Song, Chong Xing, Lei Yang, Danhao Wang, Huabin Yu, Xueqiang Xiang, Nan Gao, Guangwei Xu, Haiding Sun, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 072104 (2021)
https://doi.org/10.1063/5.0056285
Published: August 2021
View article titled, Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles
Open the PDF for Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles in another window
Journal Articles

Low defect density and small I − V curve hysteresis in NiO/ β -Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2

Weibing Hao, Qiming He, Kai Zhou, Guangwei Xu, Wenhao Xiong, Xuanze Zhou, Guangzhong Jian, Chen Chen, Xiaolong Zhao, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 043501 (2021)
https://doi.org/10.1063/5.0038349
Published: January 2021
View article titled, Low defect density and small I − V curve hysteresis in NiO/ <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> pn diode with a high PFOM of 0.65 GW/cm<sup>2</sup>
Open the PDF for Low defect density and small I − V curve hysteresis in NiO/ <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> pn diode with a high PFOM of 0.65 GW/cm<sup>2</sup> in another window
Journal Articles

Thickness of accumulation layer in amorphous indium-gallium-zinc-oxide thin-film transistors by Kelvin Probe Force Microscopy

Xuewen Shi, Congyan Lu, Guangwei Xu, Guanhua Yang, Nianduan Lu, Zhuoyu Ji, Di Geng, Ling Li, Ming Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 073501 (2019)
https://doi.org/10.1063/1.5057719
Published: February 2019
View article titled, Thickness of accumulation layer in amorphous indium-gallium-zinc-oxide thin-film transistors by Kelvin Probe Force Microscopy
Open the PDF for Thickness of accumulation layer in amorphous indium-gallium-zinc-oxide thin-film transistors by Kelvin Probe Force Microscopy in another window
Journal Articles

Surface-potential-based physical compact model for graphene field effect transistor

Lingfei Wang, Songang Peng, Wei Wang, Guangwei Xu, Zhuoyu Ji, Nianduan Lu, Ling Li, Zhi Jin, Ming Liu
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 084509 (2016)
https://doi.org/10.1063/1.4961609
Published: August 2016
View article titled, Surface-potential-based physical compact model for graphene field effect transistor
Open the PDF for Surface-potential-based physical compact model for graphene field effect transistor in another window
Journal Articles

Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy

Zhiheng Han, Guangwei Xu, Wei Wang, Congyan Lu, Nianduan Lu, Zhuoyu Ji, Ling Li, Ming Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 023509 (2016)
https://doi.org/10.1063/1.4958332
Published: July 2016
View article titled, Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy
Open the PDF for Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy in another window
Journal Articles

Analytical carrier density and quantum capacitance for graphene

Lingfei Wang, Wei Wang, Guangwei Xu, Zhuoyu Ji, Nianduan Lu, Ling Li, Ming Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 013503 (2016)
https://doi.org/10.1063/1.4939229
Published: January 2016
View article titled, Analytical carrier density and quantum capacitance for graphene
Open the PDF for Analytical carrier density and quantum capacitance for graphene in another window
Journal Articles

Analysis of the contact resistance in amorphous InGaZnO thin film transistors

Wei Wang, Ling Li, Congyan Lu, Yu Liu, Hangbing Lv, Guangwei Xu, Zhuoyu Ji, Ming Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 063504 (2015)
https://doi.org/10.1063/1.4928626
Published: August 2015
View article titled, Analysis of the contact resistance in amorphous InGaZnO thin film transistors
Open the PDF for Analysis of the contact resistance in amorphous InGaZnO thin film transistors in another window