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Gregory J. Salamo
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Journal Articles

Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film

Fernando M. de Oliveira, Chen Li, Pijush K. Ghosh, Andrian V. Kuchuk, Morgan E. Ware, Yuriy I. Mazur, Gregory J. Salamo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052805 (2023)
https://doi.org/10.1116/6.0002866
Published: August 2023
View article titled, Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
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Includes: Supplementary data
Journal Articles

Strain-driven anomalous elastic properties of GeSn thin films

Petro Lytvyn, Andrian Kuchuk, Serhiy Kondratenko, Hryhorii Stanchu, Sergii V. Malyuta, Shui-Qing Yu, Yuriy I. Mazur, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 022102 (2023)
https://doi.org/10.1063/5.0149098
Published: July 2023
View article titled, Strain-driven anomalous elastic properties of GeSn thin films
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Includes: Supplementary data
Journal Articles

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

Hang Li, Ying Wang, Yingnan Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Baolai Liang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 173105 (2023)
https://doi.org/10.1063/5.0152094
Published: April 2023
View article titled, Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
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Journal Articles

Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Hryhorii V. Stanchu, Andrian V. Kuchuk, Yuriy I. Mazur, Joe Margetis, John Tolle, Shui-Qing Yu, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 232101 (2020)
https://doi.org/10.1063/5.0011842
Published: June 2020
View article titled, Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate
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Includes: Supplementary data
Journal Articles

Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation

Rahul Kumar, Yurii Maidaniuk, Samir K. Saha, Yuriy I. Mazur, Gregory J. Salamo
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 065306 (2020)
https://doi.org/10.1063/1.5139400
Published: February 2020
View article titled, Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation
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Journal Articles

Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix

Rahul Kumar, Yurii Maidaniuk, Andrian Kuchuk, Samir K. Saha, Pijush K. Ghosh, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 235303 (2018)
https://doi.org/10.1063/1.5053412
Published: December 2018
View article titled, Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
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Journal Articles

High temperature capacitors using AlN grown by MBE as the dielectric

Pijush K. Ghosh, Mirsaeid Sarollahi, Chen Li, Thomas White, Desalegn T. Debu, Qigeng Yan, Andrian Kuchuk, Rahul Kumar, Satish Shetty, Gregory J. Salamo, Morgan E. Ware
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 041202 (2018)
https://doi.org/10.1116/1.5033931
Published: June 2018
View article titled, High temperature capacitors using AlN grown by MBE as the dielectric
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Journal Articles

Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures

Chen Li, Yurii Maidaniuk, Andrian V. Kuchuk, Satish Shetty, Pijush Ghosh, Thomas P. White, Timothy Al. Morgan, Xian Hu, Yang Wu, Morgan E. Ware, Yuriy I. Mazur, Gregory J. Salamo
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 195302 (2018)
https://doi.org/10.1063/1.5025671
Published: May 2018
View article titled, Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
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Journal Articles

Carrier dynamics of InAs quantum dots with GaAs1−xSbx barrier layers

Yingnan Guo, Yao Liu, Baolai Liang, Ying Wang, Qinglin Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 191105 (2017)
https://doi.org/10.1063/1.5003097
Published: November 2017
View article titled, Carrier dynamics of InAs quantum dots with GaAs<sub>1−x</sub>Sb<sub>x</sub> barrier layers
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Journal Articles

Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template

Serhii B. Kryvyi, Petro M. Lytvyn, Vasyl P. Kladko, Hryhorii V. Stanchu, Andrian V. Kuchuk, Yuriy. I. Mazur, Gregory J. Salamo, Shibin Li, Pavlo P. Kogutyuk, Alexander E. Belyaev
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 062902 (2017)
https://doi.org/10.1116/1.4999468
Published: October 2017
View article titled, Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template
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Journal Articles

Optical and structural study of deformation states in the GaN/AlN superlattices

Oleksandr Kolomys, Bogdan Tsykaniuk, Viktor Strelchuk, Andrey Naumov, Vasyl Kladko, Yuriy I. Mazur, Morgan E. Ware, Shibin Li, Andrian Kuchuk, Yurii Maidaniuk, Mourad Benamara, Alexander Belyaev, Gregory J. Salamo
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 155302 (2017)
https://doi.org/10.1063/1.4999175
Published: October 2017
View article titled, Optical and structural study of deformation states in the GaN/AlN superlattices
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Journal Articles

The continuum state in photoluminescence of type-II In0.46Al0.54As/Al0.54Ga0.46As quantum dots

Linlin Su, Baolai Liang, Ying Wang, Qinglin Guo, Xiaowei Li, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 183103 (2016)
https://doi.org/10.1063/1.4966895
Published: October 2016
View article titled, The continuum state in photoluminescence of type-II In<sub>0.46</sub>Al<sub>0.54</sub>As/Al<sub>0.54</sub>Ga<sub>0.46</sub>As quantum dots
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Journal Articles

Formation of self-assembled Ga-rich droplet chains on GaAs (100) patterned by focused ion beam

Sabina D. Koukourinkova, Mourad Benamara, Morgan E. Ware, Zhiming M. Wang, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 123102 (2016)
https://doi.org/10.1063/1.4962957
Published: September 2016
View article titled, Formation of self-assembled Ga-rich droplet chains on GaAs (100) patterned by focused ion beam
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Journal Articles

Coexistence of type-I and type-II band alignments in In0.46Al0.54As/Ga0.46Al0.54As self-assembled quantum dots

Linlin Su, Baolai Liang, Ying Wang, Qinglin Guo, Shufang Wang, Guangsheng Fu, Zhiming M. Wang, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 183107 (2015)
https://doi.org/10.1063/1.4935161
Published: November 2015
View article titled, Coexistence of type-I and type-II band alignments in In<sub>0.46</sub>Al<sub>0.54</sub>As/Ga<sub>0.46</sub>Al<sub>0.54</sub>As self-assembled quantum dots
Open the PDF for Coexistence of type-I and type-II band alignments in In<sub>0.46</sub>Al<sub>0.54</sub>As/Ga<sub>0.46</sub>Al<sub>0.54</sub>As self-assembled quantum dots in another window
Journal Articles

Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap

Christopher D. Yerino, Paul J. Simmonds, Baolai Liang, Vitaliy G. Dorogan, Morgan E. Ware, Yuriy I. Mazur, Daehwan Jung, Diana L. Huffaker, Gregory J. Salamo, Minjoo Larry Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 071912 (2014)
https://doi.org/10.1063/1.4893747
Published: August 2014
View article titled, Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap
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Includes: Supplementary data
Journal Articles

Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy

Perry C. Grant, Dongsheng Fan, Aboozar Mosleh, Shui-Qing Yu, Vitaliy G. Dorogan, Michael E. Hawkridge, Yuriy I. Mazur, Mourad Benamara, Gregory J. Salamo, Shane R. Johnson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 02C119 (2014)
https://doi.org/10.1116/1.4868110
Published: March 2014
View article titled, Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy
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Journal Articles

Ordering ferromagnetic In 1− x Mn x As quantum dots

Fabio A. Ferri, Vasyl P. Kunets, Gregory J. Salamo, Euclydes Marega Jr.
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1566, 357–358 (2013)
https://doi.org/10.1063/1.4848433
Published: December 2013
View article titled, Ordering ferromagnetic In 1− x Mn x As quantum dots
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Journal Articles

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Jian Wang, Zhiming M. Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, Gregory J. Salamo
Journal: AIP Advances
AIP Advances 3, 072112 (2013)
https://doi.org/10.1063/1.4815972
Published: July 2013
View article titled, Molecular beam epitaxial growth of Bi<sub>2</sub>Te<sub>3</sub> and Sb<sub>2</sub>Te<sub>3</sub> topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
Open the PDF for Molecular beam epitaxial growth of Bi<sub>2</sub>Te<sub>3</sub> and Sb<sub>2</sub>Te<sub>3</sub> topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction in another window
Includes: Supplementary data
Journal Articles

Erratum: “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN” [Appl. Phys. Lett. 101 , 122103 (2012)]

Shibin Li, Morgan Ware, Jiang Wu, Paul Minor, Zhiming Wang, Zhiming Wu, Yadong Jiang, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 099901 (2013)
https://doi.org/10.1063/1.4794848
Published: March 2013
View article titled, Erratum: “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN” [Appl. Phys. Lett. 101 , 122103 (2012)]
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Journal Articles

MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

Dongsheng Fan, Perry C. Grant, Shui-Qing Yu, Vitaliy G. Dorogan, Xian Hu, Zhaoquan Zeng, Chen Li, Michael E. Hawkridge, Mourad Benamara, Yuriy I. Mazur, Gregory J. Salamo, Shane R. Johnson, Zhiming M. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 03C105 (2013)
https://doi.org/10.1116/1.4792518
Published: February 2013
View article titled, MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures
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