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Journal Articles

Modification of far-field radiation pattern by shaping InGaN/GaN nanorods

Q. Q. Jiao, Z. Z. Chen, Y. L. Feng, S. Zhang, S. F. Li, S. X. Jiang, J. Z. Li, Y. F. Chen, T. J. Yu, X. N. Kang, E. Gu, B. Shen, G. Y. Zhang

Appl. Phys. Lett. 110, 052103 (2017)

https://doi.org/10.1063/1.4975203

Published: January 2017

View article titled, Modification of far-field radiation pattern by shaping InGaN/GaN nanorods

Includes: Supplementary data

Journal Articles

Modulating optical polarization properties of Al-rich AlGaN/AlN quantum well by controlling wavefunction overlap

X. J. Chen, T. J. Yu, H. M. Lu, G. C. Yuan, B. Shen, G. Y. Zhang

Appl. Phys. Lett. 103, 181117 (2013)

https://doi.org/10.1063/1.4828667

Published: October 2013

View article titled, Modulating optical polarization properties of Al-rich AlGaN/AlN quantum well by controlling wavefunction overlap

Journal Articles

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

E. Y. Xie, Z. Z. Chen, P. R. Edwards, Z. Gong, N. Y. Liu, Y. B. Tao, Y. F. Zhang, Y. J. Chen, I. M. Watson, E. Gu, R. W. Martin, G. Y. Zhang, M. D. Dawson

J. Appl. Phys. 112, 013107 (2012)

https://doi.org/10.1063/1.4733335

Published: July 2012

View article titled, Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

Journal Articles

Different exciton behaviors in blue and green wells of dual-wavelength InGaN/GaN MQWs structures

H. Long, T. J. Yu, L. Liu, Z. J. Yang, H. Fang, G. Y. Zhang

J. Appl. Phys. 111, 053110 (2012)

https://doi.org/10.1063/1.3692087

Published: March 2012

View article titled, Different exciton behaviors in blue and green wells of dual-wavelength InGaN/GaN MQWs structures

Journal Articles

Oscillatory Magnetoresistance Of The Two‐dimensional Electron Gas In Al x Ga 1− x N / GaN Heterostructures In Tilted Magnetic Fields

N. Tang, B. Shen, K. Han, F. C. Lu, G. Y. Zhang

AIP Conf. Proc. 1399, 145–146 (2011)

https://doi.org/10.1063/1.3666298

Published: December 2011

View article titled, Oscillatory Magnetoresistance Of The Two‐dimensional Electron Gas In Al x Ga 1− x N / GaN Heterostructures In Tilted Magnetic Fields

Journal Articles

Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate

J. Yan, T. J. Yu, X. B. Li, Y. B. Tao, C. L. Xu, H. Long, Z. Y. Yang, G. Y. Zhang

J. Appl. Phys. 110, 073102 (2011)

https://doi.org/10.1063/1.3642998

Published: October 2011

View article titled, Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate

Journal Articles

Elucidating negative capacitance in light-emitting diodes using an advanced semiconductor device theory

Y. Li, C. D. Wang, L. F. Feng, C. Y. Zhu, H. X. Cong, D. Li, G. Y. Zhang

J. Appl. Phys. 109, 124506 (2011)

https://doi.org/10.1063/1.3597831

Published: June 2011

View article titled, Elucidating negative capacitance in light-emitting diodes using an advanced semiconductor device theory

Journal Articles

Magnetotransport properties of lattice-matched In 0.18 Al 0.82 N / AlN / GaN heterostructures

Z. L. Miao, N. Tang, F. J. Xu, L. B. Cen, K. Han, J. Song, C. C. Huang, T. J. Yu, Z. J. Yang, X. Q. Wang, G. Y. Zhang, B. Shen, K. Wei, J. Huang, X. Y. Liu

J. Appl. Phys. 109, 016102 (2011)

https://doi.org/10.1063/1.3525989

Published: January 2011

View article titled, Magnetotransport properties of lattice-matched In 0.18 Al 0.82 N / AlN / GaN heterostructures

Journal Articles

Influence of polarization-induced electric fields on coherent electron tunneling in AlN/GaN coupled double quantum wells

L. B. Cen, B. Shen, C. C. Huang, F. J. Xu, Z. X. Qin, G. Y. Zhang, X. S. Chen, W. Lu

J. Appl. Phys. 108, 113107 (2010)

https://doi.org/10.1063/1.3517067

Published: December 2010

View article titled, Influence of polarization-induced electric fields on coherent electron tunneling in AlN/GaN coupled double quantum wells

Journal Articles

Mechanism of ultrahigh Mn concentration in epitaxially grown wurtzite Ga 1 − x Mn x N

Z. T. Chen, L. Wang, X. L. Yang, C. D. Wang, G. Y. Zhang

Appl. Phys. Lett. 97, 222108 (2010)

https://doi.org/10.1063/1.3521278

Published: November 2010

View article titled, Mechanism of ultrahigh Mn concentration in epitaxially grown wurtzite Ga 1 − x Mn x N

Journal Articles

Direct observation of room-temperature ferromagnetism of single-phase Ga 0.962 Mn 0.038 N by magnetic force microscopy

Z. T. Chen, X. L. Yang, T. Dai, C. D. Wang, Z. C. Wen, B. S. Han, Y. H. Zhang, Z. Y. Lin, Y. Z. Qian, H. Zhang, G. Y. Zhang

J. Appl. Phys. 108, 093913 (2010)

https://doi.org/10.1063/1.3503460

Published: November 2010

View article titled, Direct observation of room-temperature ferromagnetism of single-phase Ga 0.962 Mn 0.038 N by magnetic force microscopy

Journal Articles

Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

Y. B. Tao, Z. Z. Chen, F. F. Zhang, C. Y. Jia, S. L. Qi, T. J. Yu, X. N. Kang, Z. J. Yang, L. P. You, D. P. Yu, G. Y. Zhang

J. Appl. Phys. 107, 103529 (2010)

https://doi.org/10.1063/1.3374686

Published: May 2010

View article titled, Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

Journal Articles

Strain effects on In x Al 1 − x N crystalline quality grown on GaN templates by metalorganic chemical vapor deposition

Z. L. Miao, T. J. Yu, F. J. Xu, J. Song, L. Lu, C. C. Huang, Z. J. Yang, X. Q. Wang, G. Y. Zhang, X. P. Zhang, D. P. Yu, B. Shen

J. Appl. Phys. 107, 043515 (2010)

https://doi.org/10.1063/1.3305397

Published: February 2010

View article titled, Strain effects on In x Al 1 − x N crystalline quality grown on GaN templates by metalorganic chemical vapor deposition

Journal Articles

Substrate doping effects on Raman spectrum of epitaxial graphene on SiC

R. Yang, Q. S. Huang, X. L. Chen, G. Y. Zhang, H.-J. Gao

J. Appl. Phys. 107, 034305 (2010)

https://doi.org/10.1063/1.3283922

Published: February 2010

View article titled, Substrate doping effects on Raman spectrum of epitaxial graphene on SiC

Journal Articles

Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

F. J. Xu, B. Shen, L. Lu, Z. L. Miao, J. Song, Z. J. Yang, G. Y. Zhang, X. P. Hao, B. Y. Wang, X. Q. Shen, H. Okumura

J. Appl. Phys. 107, 023528 (2010)

https://doi.org/10.1063/1.3294965

Published: January 2010

View article titled, Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

Journal Articles

The origin and evolution of V-defects in In x Al 1 − x N epilayers grown by metalorganic chemical vapor deposition

Z. L. Miao, T. J. Yu, F. J. Xu, J. Song, C. C. Huang, X. Q. Wang, Z. J. Yang, G. Y. Zhang, X. P. Zhang, D. P. Yu, B. Shen

Appl. Phys. Lett. 95, 231909 (2009)

https://doi.org/10.1063/1.3272017

Published: December 2009

View article titled, The origin and evolution of V-defects in In x Al 1 − x N epilayers grown by metalorganic chemical vapor deposition

Journal Articles

Transmission electron microscopy investigation of inversion domain boundary in Al 0.65 Ga 0.35 N grown on AlN/sapphire template

L. W. Sang, H. Fang, Z. X. Qin, X. Q. Wang, B. Shen, Z. J. Yang, G. Y. Zhang, X. P. Zhang, L. P. You, D. P. Yu

Appl. Phys. Lett. 95, 112106 (2009)

https://doi.org/10.1063/1.3231443

Published: September 2009

View article titled, Transmission electron microscopy investigation of inversion domain boundary in Al 0.65 Ga 0.35 N grown on AlN/sapphire template

Journal Articles

Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H 3 PO 4

S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, G. Y. Zhang

Appl. Phys. Lett. 95, 071114 (2009)

https://doi.org/10.1063/1.3211970

Published: August 2009

View article titled, Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H 3 PO 4

Journal Articles

Influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells

L. B. Cen, B. Shen, Z. X. Qin, G. Y. Zhang

J. Appl. Phys. 105, 093109 (2009)

https://doi.org/10.1063/1.3124373

Published: May 2009

View article titled, Influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells

Journal Articles

Temperature dependence of the specific resistance in Ti/Al/Ni/Au Ohmic contacts on ( NH 4 ) 2 S x treated n -type GaN

F. Lin, B. Shen, S. Huang, F. J. Xu, L. Lu, J. Song, F. H. Mei, N. Ma, Z. X. Qin, G. Y. Zhang

J. Appl. Phys. 105, 093702 (2009)

https://doi.org/10.1063/1.3120962

Published: May 2009

View article titled, Temperature dependence of the specific resistance in Ti/Al/Ni/Au Ohmic contacts on ( NH 4 ) 2 S x treated n -type GaN

NARROW

Topics

Modification of far-field radiation pattern by shaping InGaN/GaN nanorods

Modulating optical polarization properties of Al-rich AlGaN/AlN quantum well by controlling wavefunction overlap

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

Different exciton behaviors in blue and green wells of dual-wavelength InGaN/GaN MQWs structures

Oscillatory Magnetoresistance Of The Two‐dimensional Electron Gas In Al x Ga 1− x N / GaN Heterostructures In Tilted Magnetic Fields

Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate

Elucidating negative capacitance in light-emitting diodes using an advanced semiconductor device theory

Magnetotransport properties of lattice-matched In 0.18 Al 0.82 N / AlN / GaN heterostructures

Influence of polarization-induced electric fields on coherent electron tunneling in AlN/GaN coupled double quantum wells

Mechanism of ultrahigh Mn concentration in epitaxially grown wurtzite Ga 1 − x Mn x N

Direct observation of room-temperature ferromagnetism of single-phase Ga 0.962 Mn 0.038 N by magnetic force microscopy

Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

Strain effects on In x Al 1 − x N crystalline quality grown on GaN templates by metalorganic chemical vapor deposition

Substrate doping effects on Raman spectrum of epitaxial graphene on SiC

Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

The origin and evolution of V-defects in In x Al 1 − x N epilayers grown by metalorganic chemical vapor deposition

Transmission electron microscopy investigation of inversion domain boundary in Al 0.65 Ga 0.35 N grown on AlN/sapphire template

Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H 3 PO 4

Influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells

Temperature dependence of the specific resistance in Ti/Al/Ni/Au Ohmic contacts on ( NH 4 ) 2 S x treated n -type GaN

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