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Journal Articles

Large barrier InAs quantum dots with efficient room temperature photon emission at telecom wavelengths

William D. Hughes, Gregory R. Savich, Kamran Shayan, A. Nick Vamivakas, G. W. Wicks
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 204001 (2020)
https://doi.org/10.1063/5.0005785
Published: May 2020
View article titled, Large barrier InAs quantum dots with efficient room temperature photon emission at telecom wavelengths
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Includes: Supplementary data
Journal Articles

Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

A. P. Craig, F. Al-Saymari, M. Jain, A. Bainbridge, G. R. Savich, T. Golding, A. Krier, G. W. Wicks, A. R. Marshall
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 151107 (2019)
https://doi.org/10.1063/1.5082895
Published: April 2019
View article titled, Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared
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Journal Articles

Defect-related surface currents in InAs-based nBn infrared detectors

X. Du, B. T. Marozas, G. R. Savich, G. W. Wicks
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 214504 (2018)
https://doi.org/10.1063/1.5027637
Published: June 2018
View article titled, Defect-related surface currents in InAs-based nBn infrared detectors
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Journal Articles

Diffusion current characteristics of defect-limited nBn mid-wave infrared detectors

G. R. Savich, D. E. Sidor, X. Du, C. P. Morath, V. M. Cowan, G. W. Wicks
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 173505 (2015)
https://doi.org/10.1063/1.4919450
Published: April 2015
View article titled, Diffusion current characteristics of defect-limited nBn mid-wave infrared detectors
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Journal Articles

Optical antenna enhanced graphene photodetector

Chitraleema Chakraborty, Ryan Beams, Kenneth M. Goodfellow, G. W. Wicks, Lukas Novotny, A. Nick Vamivakas
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 241114 (2014)
https://doi.org/10.1063/1.4904800
Published: December 2014
View article titled, Optical antenna enhanced graphene photodetector
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Journal Articles

Dark current filtering in unipolar barrier infrared detectors

G. R. Savich, J. R. Pedrazzani, D. E. Sidor, S. Maimon, G. W. Wicks
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 121112 (2011)
https://doi.org/10.1063/1.3643515
Published: September 2011
View article titled, Dark current filtering in unipolar barrier infrared detectors
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Journal Articles

Suppression of surface leakage currents using molecular beam epitaxy-grown unipolar barriers

G. R. Savich, J. R. Pedrazzani, S. Maimon, G. W. Wicks
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C3H18–C3H21 (2010)
https://doi.org/10.1116/1.3276513
Published: April 2010
View article titled, Suppression of surface leakage currents using molecular beam epitaxy-grown unipolar barriers
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Journal Articles

n B n detector, an infrared detector with reduced dark current and higher operating temperature

S. Maimon, G. W. Wicks
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 151109 (2006)
https://doi.org/10.1063/1.2360235
Published: October 2006
View article titled, n B n detector, an infrared detector with reduced dark current and higher operating temperature
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Journal Articles

Molecular beam epitaxy growth of midinfrared “W” light emitting diodes on InAs

Vladimir V. Kuznetsov, G. W. Wicks
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1548–1552 (2006)
https://doi.org/10.1116/1.2200379
Published: May 2006
View article titled, Molecular beam epitaxy growth of midinfrared “W” light emitting diodes on InAs
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Journal Articles

Studies of ammonia dissociation during the gas source molecular-beam epitaxial growth of III nitrides

G. W. Wicks, M. W. Koch, J. R. Pedrazzani
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 1186–1189 (2005)
https://doi.org/10.1116/1.1878972
Published: June 2005
View article titled, Studies of ammonia dissociation during the gas source molecular-beam epitaxial growth of III nitrides
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Journal Articles

Emitter injection efficiency and base transport factor in InAs bipolar transistors

X. Wu, S. Maimon, K. L. Averett, M. W. Koch, G. W. Wicks
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 5423–5425 (2003)
https://doi.org/10.1063/1.1606851
Published: October 2003
View article titled, Emitter injection efficiency and base transport factor in InAs bipolar transistors
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Journal Articles

InAs-based bipolar transistors grown by molecular beam epitaxy

K. L. Averett, S. Maimon, X. Wu, M. W. Koch, G. W. Wicks
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 20, 1213–1216 (2002)
https://doi.org/10.1116/1.1459461
Published: June 2002
View article titled, InAs-based bipolar transistors grown by molecular beam epitaxy
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Journal Articles

Hot hole relaxation dynamics in p-GaN

Hong Ye, G. W. Wicks, P. M. Fauchet
Journal: Applied Physics Letters
Appl. Phys. Lett. 77, 1185–1187 (2000)
https://doi.org/10.1063/1.1289651
Published: August 2000
View article titled, Hot hole relaxation dynamics in <em>p</em>-GaN
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Journal Articles

Oxidation study of GaN using x-ray photoemission spectroscopy

N. J. Watkins, G. W. Wicks, Yongli Gao
Journal: Applied Physics Letters
Appl. Phys. Lett. 75, 2602–2604 (1999)
https://doi.org/10.1063/1.125091
Published: October 1999
View article titled, Oxidation study of GaN using x-ray photoemission spectroscopy
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Journal Articles

Native oxides and regrowth on III–N surfaces

V. K. Gupta, C. C. Wamsley, M. W. Koch, G. W. Wicks
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 17, 1249–1251 (1999)
https://doi.org/10.1116/1.590732
Published: May 1999
View article titled, Native oxides and regrowth on III–N surfaces
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Journal Articles

Molecular beam epitaxy growth of boron-containing nitrides

V. K. Gupta, C. C. Wamsley, M. W. Koch, G. W. Wicks
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 17, 1246–1248 (1999)
https://doi.org/10.1116/1.590731
Published: May 1999
View article titled, Molecular beam epitaxy growth of boron-containing nitrides
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Journal Articles

Hot electron relaxation time in GaN

Hong Ye, G. W. Wicks, P. M. Fauchet
Journal: Applied Physics Letters
Appl. Phys. Lett. 74, 711–713 (1999)
https://doi.org/10.1063/1.122995
Published: February 1999
View article titled, Hot electron relaxation time in GaN
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Journal Articles

Solid source molecular beam epitaxy of GaInAsP/InP: Growth mechanisms and machine operation

C. C. Wamsley, M. W. Koch, G. W. Wicks
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 14, 2322–2324 (1996)
https://doi.org/10.1116/1.588850
Published: May 1996
View article titled, Solid source molecular beam epitaxy of GaInAsP/InP: Growth mechanisms and machine operation
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Journal Articles

Analysis of cracking efficiency of an atomic hydrogen source, and its effect on desorption of AlxGa1−xAs native oxides

G. W. Wicks, E. R. Rueckwald, M. W. Koch
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 14, 2184–2186 (1996)
https://doi.org/10.1116/1.588895
Published: May 1996
View article titled, Analysis of cracking efficiency of an atomic hydrogen source, and its effect on desorption of Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>As native oxides
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Journal Articles

Femtosecond carrier dynamics in low‐temperature grown Ga0.51In0.49P

Y. Kostoulas, K. B. Ucer, G. W. Wicks, P. M. Fauchet
Journal: Applied Physics Letters
Appl. Phys. Lett. 67, 3756–3758 (1995)
https://doi.org/10.1063/1.115373
Published: December 1995
View article titled, Femtosecond carrier dynamics in low‐temperature grown Ga<sub>0.51</sub>In<sub>0.49</sub>P
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