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Journal Articles

Silicon integrated terahertz quantum cascade ring laser frequency comb

M. Jaidl, N. Opačak, M. A. Kainz, D. Theiner, B. Limbacher, M. Beiser, M. Giparakis, A. M. Andrews, G. Strasser, B. Schwarz, J. Darmo, K. Unterrainer
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 091106 (2022)
https://doi.org/10.1063/5.0078749
Published: March 2022
View article titled, Silicon integrated terahertz quantum cascade ring laser frequency comb
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Journal Articles

Terahertz optical machine learning for object recognition

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B. Limbacher, S. Schoenhuber, M. Wenclawiak, M. A. Kainz, A. M. Andrews, G. Strasser, J. Darmo, K. Unterrainer
Journal: APL Photonics
APL Photonics 5, 126103 (2020)
https://doi.org/10.1063/5.0029310
Published: December 2020
View article titled, Terahertz optical machine learning for object recognition
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Journal Articles

Resonant tunneling diodes strongly coupled to the cavity field

B. Limbacher, M. A. Kainz, S. Schoenhuber, M. Wenclawiak, C. Derntl, A. M. Andrews, H. Detz, G. Strasser, A. Schwaighofer, B. Lendl, J. Darmo, K. Unterrainer
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 221101 (2020)
https://doi.org/10.1063/5.0007118
Published: June 2020
View article titled, Resonant tunneling diodes strongly coupled to the cavity field
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Journal Articles

Scattering strength dependence of terahertz random lasers

S. Schoenhuber, M. Wenclawiak, M. A. Kainz, B. Limbacher, A. M. Andrews, H. Detz, G. Strasser, J. Darmo, K. Unterrainer
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 151611 (2019)
https://doi.org/10.1063/1.5083699
Published: April 2019
View article titled, Scattering strength dependence of terahertz random lasers
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Journal Articles

Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells

A. Jollivet, B. Hinkov, S. Pirotta, H. Hoang, S. Derelle, J. Jaeck, M. Tchernycheva, R. Colombelli, A. Bousseksou, M. Hugues, N. Le Biavan, J. Tamayo-Arriola, M. Montes Bajo, L. Rigutti, A. Hierro, G. Strasser, J.-M. Chauveau, F. H. Julien
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 251104 (2018)
https://doi.org/10.1063/1.5058120
Published: December 2018
View article titled, Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells
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Journal Articles

Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

M. Capriotti, P. Lagger, C. Fleury, M. Oposich, O. Bethge, C. Ostermaier, G. Strasser, D. Pogany
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 024506 (2015)
https://doi.org/10.1063/1.4905945
Published: January 2015
View article titled, Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states
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Journal Articles

Characterizing intra-exciton Coulomb scattering in terahertz excitations

S. Zybell, J. Bhattacharyya, S. Winnerl, F. Eßer, M. Helm, H. Schneider, L. Schneebeli, C. N. Böttge, M. Kira, S. W. Koch, A. M. Andrews, G. Strasser
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 201109 (2014)
https://doi.org/10.1063/1.4902431
Published: November 2014
View article titled, Characterizing intra-exciton Coulomb scattering in terahertz excitations
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Includes: Supplementary data
Journal Articles

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

M. Capriotti, A. Alexewicz, C. Fleury, M. Gavagnin, O. Bethge, D. Visalli, J. Derluyn, H. D. Wanzenböck, E. Bertagnolli, D. Pogany, G. Strasser
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 113502 (2014)
https://doi.org/10.1063/1.4868531
Published: March 2014
View article titled, Fixed interface charges between AlGaN barrier and gate stack composed of <em>in situ</em> grown SiN and Al<sub>2</sub>O<sub>3</sub> in AlGaN/GaN high electron mobility transistors with normally off capability
Open the PDF for Fixed interface charges between AlGaN barrier and gate stack composed of <em>in situ</em> grown SiN and Al<sub>2</sub>O<sub>3</sub> in AlGaN/GaN high electron mobility transistors with normally off capability in another window
Journal Articles

Ultrastrong coupling of intersubband plasmons and terahertz metamaterials

D. Dietze, A. M. Andrews, P. Klang, G. Strasser, K. Unterrainer, J. Darmo
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 201106 (2013)
https://doi.org/10.1063/1.4830092
Published: November 2013
View article titled, Ultrastrong coupling of intersubband plasmons and terahertz metamaterials
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Journal Articles

Atomistic modeling of bond lengths in random and ordered III-V alloys

H. Detz, G. Strasser
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 123508 (2013)
https://doi.org/10.1063/1.4821338
Published: September 2013
View article titled, Atomistic modeling of bond lengths in random and ordered III-V alloys
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Journal Articles

Dopant migration effects in terahertz quantum cascade lasers

C. Deutsch, H. Detz, M. Krall, M. Brandstetter, T. Zederbauer, A. M. Andrews, W. Schrenk, G. Strasser, K. Unterrainer
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 201102 (2013)
https://doi.org/10.1063/1.4805040
Published: May 2013
View article titled, Dopant migration effects in terahertz quantum cascade lasers
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Journal Articles

High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K

C. Deutsch, M. Krall, M. Brandstetter, H. Detz, A. M. Andrews, P. Klang, W. Schrenk, G. Strasser, K. Unterrainer
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 211117 (2012)
https://doi.org/10.1063/1.4766915
Published: November 2012
View article titled, High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K
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Journal Articles

Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

P. Marko, A. Alexewicz, O. Hilt, G. Meneghesso, E. Zanoni, J. Würfl, G. Strasser, D. Pogany
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 143507 (2012)
https://doi.org/10.1063/1.3701164
Published: April 2012
View article titled, Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors
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Journal Articles

Sub-diffraction-limit semiconductor resonators operating on the fundamental magnetic resonance

E. Strupiechonski, G. Xu, M. Brekenfeld, Y. Todorov, N. Isac, A. M. Andrews, P. Klang, C. Sirtori, G. Strasser, A. Degiron, R. Colombelli
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 131113 (2012)
https://doi.org/10.1063/1.3697660
Published: March 2012
View article titled, Sub-diffraction-limit semiconductor resonators operating on the fundamental magnetic resonance
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Journal Articles

Rashba Effect in Non‐Magnetic InGaAs/GaAsSb Resonant Tunneling Diodes Enhanced By Transverse Magnetic Field

J. Silvano de Sousa, H. Detz, P. Klang, E. Gornik, G. Strasser, J. Smoliner
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1416, 42–45 (2011)
https://doi.org/10.1063/1.3671693
Published: December 2011
View article titled, Rashba Effect in Non‐Magnetic InGaAs/GaAsSb Resonant Tunneling Diodes Enhanced By Transverse Magnetic Field
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Journal Articles

Improvements of High Performance 2‐nm‐thin InAlN/AlN Barrier Devices by Interface Engineering

C. Ostermaier, G. Pozzovivo, J.‐F. Carlin, B. Basnar, W. Schrenk, A. M. Andrews, Y. Douvry, C. Gaquiere, J.‐C. De Jaeger, L. Tóth, B. Pecz, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 905–906 (2011)
https://doi.org/10.1063/1.3666669
Published: December 2011
View article titled, Improvements of High Performance 2‐nm‐thin InAlN/AlN Barrier Devices by Interface Engineering
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Journal Articles

THz Quantum Hall Conductivity Studies in a GaAs Heterojunction

A. V. Stier, H. Zhang, C. T. Ellis, D. Eason, G. Strasser, B. D. McCombe, J. Cerne
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 627–628 (2011)
https://doi.org/10.1063/1.3666534
Published: December 2011
View article titled, THz Quantum Hall Conductivity Studies in a GaAs Heterojunction
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Journal Articles

Temperature‐induced beam steering of Y‐coupled quantum cascade lasers

S. I. Ahn, E. Mujagić, M. Nobile, H. Detz, C. Schwarzer, A. M. Andrews, P. Klang, W. Schrenk, G. Strasser
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 993–994 (2011)
https://doi.org/10.1063/1.3666712
Published: December 2011
View article titled, Temperature‐induced beam steering of Y‐coupled quantum cascade lasers
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Journal Articles

Coupling strategies for coherent operation of quantum cascade ring laser arrays

Clemens Schwarzer, Y. Yao, E. Mujagić, S. Ahn, W. Schrenk, J. Chen, C. Gmachl, G. Strasser
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 989–990 (2011)
https://doi.org/10.1063/1.3666710
Published: December 2011
View article titled, Coupling strategies for coherent operation of quantum cascade ring laser arrays
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Journal Articles

Mapping the Local Photoresponse of Epitaxial and Colloidal Quantum Dots by Photoconductive Atomic Force Microscopy

M. Madl, W. Brezna, P. Klang, A. M. Andrews, G. Strasser, M. I. Bodnarchuk, M. V. Kovalenko, M. Yarema, W. Heiss, J. Smoliner
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 1073–1074 (2011)
https://doi.org/10.1063/1.3666749
Published: December 2011
View article titled, Mapping the Local Photoresponse of Epitaxial and Colloidal Quantum Dots by Photoconductive Atomic Force Microscopy
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