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Journal Articles

High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor

Venkata S. N. Chava, Bobby G. Barker, Jr., Anusha Balachandran, Asif Khan, G. Simin, Andrew B. Greytak, M. V. S. Chandrashekhar
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 243504 (2017)
https://doi.org/10.1063/1.5009003
Published: December 2017
View articletitled, High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor
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Journal Articles

III-nitride transistors with capacitively coupled contacts

G. Simin, Z.-J. Yang, A. Koudymov, V. Adivarahan, J. Yang, M. Asif Khan
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 033510 (2006)
https://doi.org/10.1063/1.2234725
Published: July 2006
View articletitled, III-nitride transistors with capacitively coupled contacts
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Journal Articles

Digital oxide deposition of Si O 2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors

V. Adivarahan, S. Rai, N. Tipirneni, A. Koudymov, J. Yang, G. Simin, M. Asif Khan
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 182507 (2006)
https://doi.org/10.1063/1.2198508
Published: May 2006
View articletitled, Digital oxide deposition of Si O 2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors
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Journal Articles

Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures

S. Saygi, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, M. Asif Khan, J. Deng, R. Gaska, M. S. Shur
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 043505 (2005)
https://doi.org/10.1063/1.2001745
Published: July 2005
View articletitled, Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures
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Journal Articles

Simulation of gate lag and current collapse in gallium nitride field-effect transistors

N. Braga, R. Mickevicius, R. Gaska, M. S. Shur, M. Asif Khan, G. Simin
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 4780–4782 (2004)
https://doi.org/10.1063/1.1823018
Published: November 2004
View articletitled, Simulation of gate lag and current collapse in gallium nitride field-effect transistors
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Journal Articles

High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design

V. Adivarahan, S. Wu, W. H. Sun, V. Mandavilli, M. S. Shatalov, G. Simin, J. W. Yang, H. P. Maruska, M. Asif Khan
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 1838–1840 (2004)
https://doi.org/10.1063/1.1784882
Published: September 2004
View articletitled, High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design
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Journal Articles

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

N. Braga, R. Mickevicius, R. Gaska, X. Hu, M. S. Shur, M. Asif Khan, G. Simin, J. Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 6409–6413 (2004)
https://doi.org/10.1063/1.1719262
Published: June 2004
View articletitled, Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors
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Journal Articles

Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping

K. Kazlauskas, G. Tamulaitis, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, G. Simin, M. S. Shur, R. Gaska
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 3722–3724 (2003)
https://doi.org/10.1063/1.1625111
Published: November 2003
View articletitled, Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping
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Journal Articles

Exciton and carrier motion in quaternary AlInGaN

K. Kazlauskas, G. Tamulaitis, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, E. Kuokstis, G. Simin, M. S. Shur, R. Gaska
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 4501–4503 (2003)
https://doi.org/10.1063/1.1586782
Published: June 2003
View articletitled, Exciton and carrier motion in quaternary AlInGaN
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Journal Articles

AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

C. Q. Chen, J. P. Zhang, V. Adivarahan, A. Koudymov, H. Fatima, G. Simin, J. Yang, M. Asif Khan
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 4593–4595 (2003)
https://doi.org/10.1063/1.1587274
Published: June 2003
View articletitled, AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors
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Journal Articles

Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region

S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, M. Asif Khan, G. Simin, J. Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 93, 10030–10034 (2003)
https://doi.org/10.1063/1.1574599
Published: June 2003
View articletitled, Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region
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Journal Articles

Erratum: “Near-band-edge photoluminescence of wurtzite-type AlN” [Appl. Phys. Lett. 81 , 2755 (2002)]

E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska, M. Shur, J. C. Rojo, L. J. Schowalter
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 1488 (2003)
https://doi.org/10.1063/1.1555280
Published: March 2003
View articletitled, Erratum: “Near-band-edge photoluminescence of wurtzite-type AlN” [Appl. Phys. Lett. 81 , 2755 (2002)]
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Journal Articles

AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

X. Hu, J. Deng, N. Pala, R. Gaska, M. S. Shur, C. Q. Chen, J. Yang, G. Simin, M. A. Khan, J. C. Rojo, L. J. Schowalter
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 1299–1301 (2003)
https://doi.org/10.1063/1.1555282
Published: February 2003
View articletitled, AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
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Journal Articles

Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm

M. Shatalov, A. Chitnis, V. Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, G. Simin, M. Asif Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, R. Gaska
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 167–169 (2003)
https://doi.org/10.1063/1.1536729
Published: January 2003
View articletitled, Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm
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Journal Articles

Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang, M. Asif Khan
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 4910–4912 (2002)
https://doi.org/10.1063/1.1531835
Published: December 2002
View articletitled, Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
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Journal Articles

Polarization effects in photoluminescence of C - and M -plane GaN/AlGaN multiple quantum wells

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, B. Chai
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 4130–4132 (2002)
https://doi.org/10.1063/1.1524298
Published: November 2002
View articletitled, Polarization effects in photoluminescence of C - and M -plane GaN/AlGaN multiple quantum wells
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Journal Articles

GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, M. A. Khan, Herbert-Paul Maruska, David W. Hill, Mitch M. C. Chou, Bruce Chai
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 3194–3196 (2002)
https://doi.org/10.1063/1.1516230
Published: October 2002
View articletitled, GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates
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Journal Articles

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

S. L. Rumyantsev, Y. Deng, E. Borovitskaya, A. Dmitriev, W. Knap, N. Pala, M. S. Shur, M. E. Levinshtein, M. Asif Khan, G. Simin, J. Yang, X. Hu
Journal: Journal of Applied Physics
J. Appl. Phys. 92, 4726–4730 (2002)
https://doi.org/10.1063/1.1508432
Published: October 2002
View articletitled, Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures
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Journal Articles

Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, G. Simin, M. Asif Khan
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 2938–2940 (2002)
https://doi.org/10.1063/1.1516631
Published: October 2002
View articletitled, Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm
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Journal Articles

Near-band-edge photoluminescence of wurtzite-type AlN

E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska, M. Shur, C. Rojo, L. Schowalter
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 2755–2757 (2002)
https://doi.org/10.1063/1.1510586
Published: October 2002
View articletitled, Near-band-edge photoluminescence of wurtzite-type AlN
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