1-20 of 36
G. Pozina
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Polarization of stacking fault related luminescence in GaN nanorods

G. Pozina, M. Forsberg, E. A. Serban, C.-L. Hsiao, M. Junaid, J. Birch, M. A. Kaliteevski
Journal: AIP Advances
AIP Advances 7, 015303 (2017)
https://doi.org/10.1063/1.4974461
Published: January 2017
View article titled, Polarization of stacking fault related luminescence in GaN nanorods
Open the PDF for Polarization of stacking fault related luminescence in GaN nanorods in another window
Journal Articles

Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

S. Khromov, C. Hemmingsson, B. Monemar, L. Hultman, G. Pozina
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 223503 (2014)
https://doi.org/10.1063/1.4903819
Published: December 2014
View article titled, Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy
Open the PDF for Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy in another window
Journal Articles

Properties of the main Mg-related acceptors in GaN from optical and structural studies

B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, S. Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoç, H. Amano, M. Iwaya, I. Akasaki
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 053507 (2014)
https://doi.org/10.1063/1.4862928
Published: February 2014
View article titled, Properties of the main Mg-related acceptors in GaN from optical and structural studies
Open the PDF for Properties of the main Mg-related acceptors in GaN from optical and structural studies in another window
Journal Articles

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

S. Khromov, B. Monemar, V. Avrutin, H. Morkoç, L. Hultman, G. Pozina
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 192101 (2013)
https://doi.org/10.1063/1.4828820
Published: November 2013
View article titled, Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN
Open the PDF for Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN in another window
Journal Articles

Suppression of the quantum-confined Stark effect in AlxGa1−xN/AlyGa1−yN corrugated quantum wells

A. A. Toropov, E. A. Shevchenko, T. V. Shubina, V. N. Jmerik, D. V. Nechaev, M. A. Yagovkina, A. A. Sitnikova, S. V. Ivanov, G. Pozina, J. P. Bergman, B. Monemar
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 124306 (2013)
https://doi.org/10.1063/1.4822155
Published: September 2013
View article titled, Suppression of the quantum-confined Stark effect in Al<sub>x</sub>Ga<sub>1−x</sub>N/Al<sub>y</sub>Ga<sub>1−y</sub>N corrugated quantum wells
Open the PDF for Suppression of the quantum-confined Stark effect in Al<sub>x</sub>Ga<sub>1−x</sub>N/Al<sub>y</sub>Ga<sub>1−y</sub>N corrugated quantum wells in another window
Journal Articles

Surface potential effect on excitons in AlGaN/GaN quantum well structures

G. Pozina, C. Hemmingsson, H. Amano, B. Monemar
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 082110 (2013)
https://doi.org/10.1063/1.4793568
Published: March 2013
View article titled, Surface potential effect on excitons in AlGaN/GaN quantum well structures
Open the PDF for Surface potential effect on excitons in AlGaN/GaN quantum well structures in another window
Journal Articles

Optical and structural studies of homoepitaxially grown m-plane GaN

S. Khromov, B. Monemar, V. Avrutin, Xing Li, H. Morkoç, L. Hultman, G. Pozina
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 172108 (2012)
https://doi.org/10.1063/1.4706258
Published: April 2012
View article titled, Optical and structural studies of homoepitaxially grown <em>m</em>-plane GaN
Open the PDF for Optical and structural studies of homoepitaxially grown <em>m</em>-plane GaN in another window
Journal Articles

Excitonic parameters of GaN studied by time-of-flight spectroscopy

T. V. Shubina, A. A. Toropov, G. Pozina, J. P. Bergman, M. M. Glazov, N. A. Gippius, P. Disseix, J. Leymarie, B. Gil, B. Monemar
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 101108 (2011)
https://doi.org/10.1063/1.3625431
Published: September 2011
View article titled, Excitonic parameters of GaN studied by time-of-flight spectroscopy
Open the PDF for Excitonic parameters of GaN studied by time-of-flight spectroscopy in another window
Journal Articles

Indirect optical transition due to surface band bending in ZnO nanotubes

L. L. Yang, Q. X. Zhao, M. Q. Israr, J. R. Sadaf, M. Willander, G. Pozina, J. H. Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 103513 (2010)
https://doi.org/10.1063/1.3511345
Published: November 2010
View article titled, Indirect optical transition due to surface band bending in ZnO nanotubes
Open the PDF for Indirect optical transition due to surface band bending in ZnO nanotubes in another window
Journal Articles

Size dependent carrier recombination in ZnO nanocrystals

G. Pozina, L. L. Yang, Q. X. Zhao, L. Hultman, P. G. Lagoudakis
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 131909 (2010)
https://doi.org/10.1063/1.3494535
Published: September 2010
View article titled, Size dependent carrier recombination in ZnO nanocrystals
Open the PDF for Size dependent carrier recombination in ZnO nanocrystals in another window
Journal Articles

Surface Recombination in ZnO Nanorods Grown by Aqueous Chemical Methods

Q. X. Zhao, L. L. Yang, M. Willander, G. Pozina, P. O. Holtz
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1199, 319–320 (2010)
https://doi.org/10.1063/1.3295430
Published: January 2010
View article titled, Surface Recombination in ZnO Nanorods Grown by Aqueous Chemical Methods
Open the PDF for Surface Recombination in ZnO Nanorods Grown by Aqueous Chemical Methods in another window
Journal Articles

Optical Properties Of Metastable Shallow Acceptors In Mg‐Doped GaN Layers Grown By Metal‐Organic Vapor Phase Epitaxy

G. Pozina, C. Hemmingsson, J. P. Bergman, T. Kawashima, H. Amano, I. Akasaki, A. Usui, B. Monemar
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1199, 110–111 (2010)
https://doi.org/10.1063/1.3295320
Published: January 2010
View article titled, Optical Properties Of Metastable Shallow Acceptors In Mg‐Doped GaN Layers Grown By Metal‐Organic Vapor Phase Epitaxy
Open the PDF for Optical Properties Of Metastable Shallow Acceptors In Mg‐Doped GaN Layers Grown By Metal‐Organic Vapor Phase Epitaxy in another window
Journal Articles

Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4 H -SiC substrate

G. Pozina, C. Hemmingsson, U. Forsberg, A. Lundskog, A. Kakanakova-Georgieva, B. Monemar, L. Hultman, E. Janzén
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 113513 (2008)
https://doi.org/10.1063/1.3028687
Published: December 2008
View article titled, Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4 H -SiC substrate
Open the PDF for Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4 H -SiC substrate in another window
Journal Articles

Effects of hydrogen on the optical properties of Zn Cd O ∕ Zn O quantum wells grown by molecular beam epitaxy

I. A. Buyanova, X. J. Wang, G. Pozina, W. M. Chen, W. Lim, D. P. Norton, S. J. Pearton, A. Osinsky, J. W. Dong, B. Hertog
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 261912 (2008)
https://doi.org/10.1063/1.2953178
Published: July 2008
View article titled, Effects of hydrogen on the optical properties of Zn Cd O ∕ Zn O quantum wells grown by molecular beam epitaxy
Open the PDF for Effects of hydrogen on the optical properties of Zn Cd O ∕ Zn O quantum wells grown by molecular beam epitaxy in another window
Journal Articles

Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

G. Pozina, C. Hemmingsson, P. P. Paskov, J. P. Bergman, B. Monemar, T. Kawashima, H. Amano, I. Akasaki, A. Usui
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 151904 (2008)
https://doi.org/10.1063/1.2909541
Published: April 2008
View article titled, Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
Open the PDF for Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates in another window
Journal Articles

Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates

G. Pozina, P. P. Paskov, J. P. Bergman, C. Hemmingsson, L. Hultman, B. Monemar, H. Amano, I. Akasaki, A. Usui
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 221901 (2007)
https://doi.org/10.1063/1.2809407
Published: November 2007
View article titled, Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
Open the PDF for Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates in another window
Journal Articles

Recombination dynamics and lasing in Zn O ∕ Zn Mg O single quantum well structures

T. V. Shubina, A. A. Toropov, O. G. Lublinskaya, P. S. Kop’ev, S. V. Ivanov, A. El-Shaer, M. Al-Suleiman, A. Bakin, A. Waag, A. Voinilovich, E. V. Lutsenko, G. P. Yablonskii, J. P. Bergman, G. Pozina, B. Monemar
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 201104 (2007)
https://doi.org/10.1063/1.2812549
Published: November 2007
View article titled, Recombination dynamics and lasing in Zn O ∕ Zn Mg O single quantum well structures
Open the PDF for Recombination dynamics and lasing in Zn O ∕ Zn Mg O single quantum well structures in another window
Journal Articles

Mechanism for radiative recombination in ZnCdO alloys

I. A. Buyanova, J. P. Bergman, G. Pozina, W. M. Chen, S. Rawal, D. P. Norton, S. J. Pearton, A. Osinsky, J. W. Dong
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 261907 (2007)
https://doi.org/10.1063/1.2751589
Published: June 2007
View article titled, Mechanism for radiative recombination in ZnCdO alloys
Open the PDF for Mechanism for radiative recombination in ZnCdO alloys in another window
Journal Articles

Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy

G. Pozina, C. Hemmingsson, J. P. Bergman, D. Trinh, L. Hultman, B. Monemar
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 221904 (2007)
https://doi.org/10.1063/1.2743950
Published: May 2007
View article titled, Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy
Open the PDF for Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy in another window
Journal Articles

Time-resolved studies of photoluminescence in GaN x P 1−x alloys: Evidence for indirect-direct band gap crossover

I. A. Buyanova, G. Pozina, J. P. Bergman, W. M. Chen, H. P. Xin, C. W. Tu
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 52–54 (2002)
https://doi.org/10.1063/1.1491286
Published: July 2002
View article titled, Time-resolved studies of photoluminescence in GaN x P 1−x alloys: Evidence for indirect-direct band gap crossover
Open the PDF for Time-resolved studies of photoluminescence in GaN x P 1−x alloys: Evidence for indirect-direct band gap crossover in another window