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G. Patriarche
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Journal Articles

Measuring the surface bonding energy: A comparison between the classical double-cantilever beam experiment and its nanoscale analog

K. Pantzas, F. Fournel, A. Talneau, G. Patriarche, E. Le Bourhis
Journal: AIP Advances
AIP Advances 10, 045006 (2020)
https://doi.org/10.1063/1.5143843
Published: April 2020
View article titled, Measuring the surface bonding energy: A comparison between the classical double-cantilever beam experiment and its nanoscale analog
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Journal Articles

Single crystalline boron rich B(Al)N alloys grown by MOVPE

Editor’s Pick
P. Vuong, A. Mballo, S. Sundaram, G. Patriarche, Y. Halfaya, S. Karrakchou, A. Srivastava, K. Krishnan, N. Y. Sama, T. Ayari, S. Gautier, P. L. Voss, J. P. Salvestrini, A. Ougazzaden
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 042101 (2020)
https://doi.org/10.1063/1.5135505
Published: January 2020
View article titled, Single crystalline boron rich B(Al)N alloys grown by MOVPE
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Journal Articles

Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode

A. Ponchet, G. Patriarche, J. B. Rodriguez, L. Cerutti, E. Tournié
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 191601 (2018)
https://doi.org/10.1063/1.5055056
Published: November 2018
View article titled, Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode
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Journal Articles

New insights into the Mo/Cu(In,Ga)Se2 interface in thin film solar cells: Formation and properties of the MoSe2 interfacial layer

T. Klinkert, B. Theys, G. Patriarche, M. Jubault, F. Donsanti, J.-F. Guillemoles, D. Lincot
Journal: The Journal of Chemical Physics
J. Chem. Phys. 145, 154702 (2016)
https://doi.org/10.1063/1.4964677
Published: October 2016
View article titled, New insights into the Mo/Cu(In,Ga)Se<sub>2</sub> interface in thin film solar cells: Formation and properties of the MoSe<sub>2</sub> interfacial layer
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Journal Articles

High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO2/HfO2 versus SiO2/SiNx

F. Réveret, L. Bignet, W. Zhigang, X. Lafosse, G. Patriarche, P. Disseix, F. Médard, M. Mihailovic, J. Leymarie, J. Zúñiga-Pérez, S. Bouchoule
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 093107 (2016)
https://doi.org/10.1063/1.4961658
Published: September 2016
View article titled, High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO<sub>2</sub>/HfO<sub>2</sub> versus SiO<sub>2</sub>/SiN<sub>x</sub>
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Journal Articles

Abrupt GaP/Si hetero-interface using bistepped Si buffer

Y. Ping Wang, J. Stodolna, M. Bahri, J. Kuyyalil, T. Nguyen Thanh, S. Almosni, R. Bernard, R. Tremblay, M. Da Silva, A. Létoublon, T. Rohel, K. Tavernier, L. Largeau, G. Patriarche, A. Le Corre, A. Ponchet, C. Magen, C. Cornet, O. Durand
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 191603 (2015)
https://doi.org/10.1063/1.4935494
Published: November 2015
View article titled, Abrupt GaP/Si hetero-interface using bistepped Si buffer
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Journal Articles

Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, A. Ougazzaden
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 113105 (2015)
https://doi.org/10.1063/1.4931132
Published: September 2015
View article titled, Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates
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Journal Articles

Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires

T. Xu, M. J. Wei, P. Capiod, A. Díaz Álvarez, X. L. Han, D. Troadec, J. P. Nys, M. Berthe, I. Lefebvre, G. Patriarche, S. R. Plissard, P. Caroff, Ph. Ebert, B. Grandidier
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 112102 (2015)
https://doi.org/10.1063/1.4930991
Published: September 2015
View article titled, Type I band alignment in GaAs<sub>81</sub>Sb<sub>19</sub>/GaAs core-shell nanowires
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Journal Articles

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

L. Cerutti, A. Castellano, J.-B. Rodriguez, M. Bahri, L. Largeau, A. Balocchi, K. Madiomanana, F. Lelarge, G. Patriarche, X. Marie, E. Tournié
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 101102 (2015)
https://doi.org/10.1063/1.4914884
Published: March 2015
View article titled, GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-<em>μ</em>m
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Journal Articles

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan
Journal: AIP Advances
AIP Advances 4, 127101 (2014)
https://doi.org/10.1063/1.4903227
Published: December 2014
View article titled, Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors
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Journal Articles

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, A. Ougazzaden
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 163105 (2014)
https://doi.org/10.1063/1.4900531
Published: October 2014
View article titled, Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template
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Journal Articles

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

A. Soltani, M. Rousseau, J.-C. Gerbedoen, M. Mattalah, P. L. Bonanno, A. Telia, N. Bourzgui, G. Patriarche, A. Ougazzaden, A. BenMoussa
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 233506 (2014)
https://doi.org/10.1063/1.4882415
Published: June 2014
View article titled, High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping
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Journal Articles

Aberration corrected STEM to study an ancient hair dyeing formula

G. Patriarche, E. Van Elslande, J. Castaing, P. Walter
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1598, 14–17 (2014)
https://doi.org/10.1063/1.4878268
Published: May 2014
View article titled, Aberration corrected STEM to study an ancient hair dyeing formula
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Journal Articles

Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation

A. Itawi, K. Pantzas, I. Sagnes, G. Patriarche, A. Talneau
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 021201 (2014)
https://doi.org/10.1116/1.4863317
Published: January 2014
View article titled, Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation
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Journal Articles

Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers

F. Janiak, M. Motyka, G. Sęk, M. Dyksik, K. Ryczko, J. Misiewicz, R. Weih, S. Höfling, M. Kamp, G. Patriarche
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 223510 (2013)
https://doi.org/10.1063/1.4846756
Published: December 2013
View article titled, Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers
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Journal Articles

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

P. Capiod, T. Xu, J. P. Nys, M. Berthe, G. Patriarche, L. Lymperakis, J. Neugebauer, P. Caroff, R. E. Dunin-Borkowski, Ph. Ebert, B. Grandidier
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 122104 (2013)
https://doi.org/10.1063/1.4821293
Published: September 2013
View article titled, Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces
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Journal Articles

Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate

K. Naji, G. Saint-Girons, J. Penuelas, G. Patriarche, L. Largeau, H. Dumont, P. Rojo-Romeo, M. Gendry
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 243113 (2013)
https://doi.org/10.1063/1.4811782
Published: June 2013
View article titled, Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate
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Journal Articles

Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

A. Talneau, C. Roblin, A. Itawi, O. Mauguin, L. Largeau, G. Beaudouin, I. Sagnes, G. Patriarche, C. Pang, H. Benisty
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 212101 (2013)
https://doi.org/10.1063/1.4807890
Published: May 2013
View article titled, Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon
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Journal Articles

Fabrication and characterization of a room-temperature ZnO polariton laser

Feng Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, G. Malpuech, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, J. Zuniga-Perez
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 191118 (2013)
https://doi.org/10.1063/1.4804986
Published: May 2013
View article titled, Fabrication and characterization of a room-temperature ZnO polariton laser
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Journal Articles

Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths

R. Anufriev, N. Chauvin, H. Khmissi, K. Naji, J.-B. Barakat, J. Penuelas, G. Patriarche, M. Gendry, C. Bru-Chevallier
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 193101 (2013)
https://doi.org/10.1063/1.4804327
Published: May 2013
View article titled, Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths
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