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1-18 of 18
G. Lambert
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Journal Articles
Element-selective analysis of ultrafast demagnetization in Co/Pt multilayers exhibiting large perpendicular magnetic anisotropy
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 120, 072408 (2022)
Published: February 2022
Includes: Supplementary data
Journal Articles
M. E. Couprie, T. André, F. Blache, F. Bouvet, F. Briquez, D. Dennetière, Y. Dietrich, C. de Oliviera, J. P. Duval, M. El Ajjouri, A. Ghaith, C. Herbeaux, N. Hubert, M. Khojoyan, C. Kitégi, M. Labat, N. Leclercq, A. Lestrade, A. Loulergue, O. Marcouillé, F. Marteau, D. Oumbarek, F. Polack, P. Rommeluère, M. Sebdaoui, K. Tavakoli, M. Valléau, I. A. Andriyash, C. Benabderrahmane, S. Corde, J. Gautier, J. P. Goddet, G. Lambert, B. Mahieu, K. Ta Phuoc, A. Tafzi, C. Thaury, S. Smartsev, V. Malka, E. Roussel, C. Evain, C. Szwaj, S. Bielawski
Journal:
AIP Conference Proceedings
AIP Conf. Proc. 2054, 030034 (2019)
Published: January 2019
Journal Articles
Steven Carabello, Joseph G. Lambert, Jerome Mlack, Wenqing Dai, Qi Li, Ke Chen, Daniel Cunnane, X. X. Xi, Roberto C. Ramos
Journal:
Journal of Applied Physics
J. Appl. Phys. 120, 123904 (2016)
Published: September 2016
Journal Articles
Note: Real-time monitoring via second-harmonic interferometry of a flow gas cell for laser wakefield acceleration
Available to Purchase
Journal:
Review of Scientific Instruments
Rev. Sci. Instrum. 87, 086103 (2016)
Published: August 2016
Journal Articles
Probing electron acceleration and x-ray emission in laser-plasma accelerators
Available to PurchaseC. Thaury, K. Ta Phuoc, S. Corde, P. Brijesh, G. Lambert, S. P. D. Mangles, M. S. Bloom, S. Kneip, V. Malka
Journal:
Physics of Plasmas
Phys. Plasmas 20, 063101 (2013)
Published: June 2013
Journal Articles
Tuning the electron energy by controlling the density perturbation position in laser plasma accelerators
Available to PurchaseP. Brijesh, C. Thaury, K. T. Phuoc, S. Corde, G. Lambert, V. Malka, S. P. D. Mangles, M. Bloom, S. Kneip
Journal:
Physics of Plasmas
Phys. Plasmas 19, 063104 (2012)
Published: June 2012
Journal Articles
Bessel spatial profile of a soft x-ray laser beam
Available to PurchaseF. Tissandier, S. Sebban, M. Ribière, J. Gautier, Ph. Zeitoun, G. Lambert, J.-Ph. Goddet, F. Burgy, C. Valentin, A. Rousse, J. Nejdl, T. Mocek, G. Maynard
Journal:
Applied Physics Letters
Appl. Phys. Lett. 97, 231106 (2010)
Published: December 2010
Journal Articles
Subwavenumber charge-coupled device spectrometer calibration using molecular iodine laser-induced fluorescence
Available to Purchase
Journal:
Review of Scientific Instruments
Rev. Sci. Instrum. 81, 013110 (2010)
Published: January 2010
Includes: Supplementary data
Journal Articles
Quantum-limited mass flow of liquid He 3
Available to Purchase
Journal:
Low Temperature Physics
Low Temp. Phys. 34, 249–253 (2008)
Published: April 2008
Journal Articles
The ARC‐EN‐CIEL French 4th Generation Light Source
Available to PurchaseC. Bruni, M. E. Couprie, O. Chubar, A. Loulergue, L. Nahon, B. Carré, D. Garzella, M. Labat, G. Lambert, P. Monot, M. Jablonka, F. Méot, A. Mosnier, J. R. Marquès, J. M. Ortega, D. Nutarelli
Journal:
AIP Conference Proceedings
AIP Conf. Proc. 879, 256–259 (2007)
Published: January 2007
Journal Articles
Photoluminescence spectra in an applied magnetic field for excitons bound to ionized donors in high‐purity, epitaxial GaAs
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 70, 4909–4918 (1991)
Published: November 1991
Journal Articles
Characterization of Er3+‐doped glasses by fluorescence line narrowing
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 69, 6799–6811 (1991)
Published: May 1991
Journal Articles
Photoluminescence and photoluminescence excitation spectroscopy in a magnetic field for GaAs grown on a Si substrate
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 65, 4382–4387 (1989)
Published: June 1989
Journal Articles
Resonant photoluminescence excitation in GaAs grown directly on Si
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 53, 213–215 (1988)
Published: July 1988
Journal Articles
Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 52, 150–152 (1988)
Published: January 1988
Journal Articles
Photoluminescence spectra and line‐shape synthesis of a conduction‐band‐to‐deep‐acceptor transition in GaAs:Sn
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 60, 4253–4258 (1986)
Published: December 1986
Journal Articles
Studies of free‐to‐bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor‐phase epitaxy and molecular‐beam epitaxy
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 59, 2828–2832 (1986)
Published: April 1986
Journal Articles
Analysis of free‐to‐bound flourescence line shapes for a deep level in GaAs:Sn
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 53, 3347–3349 (1982)
Published: April 1982