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Journal Articles

Element-selective analysis of ultrafast demagnetization in Co/Pt multilayers exhibiting large perpendicular magnetic anisotropy

M. Hennes, G. Lambert, V. Chardonnet, R. Delaunay, G. S. Chiuzbăian, E. Jal, B. Vodungbo
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 072408 (2022)
https://doi.org/10.1063/5.0080275
Published: February 2022
View article titled, Element-selective analysis of ultrafast demagnetization in Co/Pt multilayers exhibiting large perpendicular magnetic anisotropy
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Includes: Supplementary data
Journal Articles

Towards a free electron laser using laser plasma acceleration on COXINEL

M. E. Couprie, T. André, F. Blache, F. Bouvet, F. Briquez, D. Dennetière, Y. Dietrich, C. de Oliviera, J. P. Duval, M. El Ajjouri, A. Ghaith, C. Herbeaux, N. Hubert, M. Khojoyan, C. Kitégi, M. Labat, N. Leclercq, A. Lestrade, A. Loulergue, O. Marcouillé, F. Marteau, D. Oumbarek, F. Polack, P. Rommeluère, M. Sebdaoui, K. Tavakoli, M. Valléau, I. A. Andriyash, C. Benabderrahmane, S. Corde, J. Gautier, J. P. Goddet, G. Lambert, B. Mahieu, K. Ta Phuoc, A. Tafzi, C. Thaury, S. Smartsev, V. Malka, E. Roussel, C. Evain, C. Szwaj, S. Bielawski
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2054, 030034 (2019)
https://doi.org/10.1063/1.5084597
Published: January 2019
View article titled, Towards a free electron laser using laser plasma acceleration on COXINEL
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Journal Articles

Microwave resonant activation in hybrid single-gap/two-gap Josephson tunnel junctions

Steven Carabello, Joseph G. Lambert, Jerome Mlack, Wenqing Dai, Qi Li, Ke Chen, Daniel Cunnane, X. X. Xi, Roberto C. Ramos
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 123904 (2016)
https://doi.org/10.1063/1.4963651
Published: September 2016
View article titled, Microwave resonant activation in hybrid single-gap/two-gap Josephson tunnel junctions
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Journal Articles

Note: Real-time monitoring via second-harmonic interferometry of a flow gas cell for laser wakefield acceleration

F. Brandi, F. Giammanco, F. Conti, F. Sylla, G. Lambert, L. A. Gizzi
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 87, 086103 (2016)
https://doi.org/10.1063/1.4960399
Published: August 2016
View article titled, Note: Real-time monitoring via second-harmonic interferometry of a flow gas cell for laser wakefield acceleration
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Journal Articles

Probing electron acceleration and x-ray emission in laser-plasma accelerators

C. Thaury, K. Ta Phuoc, S. Corde, P. Brijesh, G. Lambert, S. P. D. Mangles, M. S. Bloom, S. Kneip, V. Malka
Journal: Physics of Plasmas
Phys. Plasmas 20, 063101 (2013)
https://doi.org/10.1063/1.4810791
Published: June 2013
View article titled, Probing electron acceleration and x-ray emission in laser-plasma accelerators
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Journal Articles

Tuning the electron energy by controlling the density perturbation position in laser plasma accelerators

P. Brijesh, C. Thaury, K. T. Phuoc, S. Corde, G. Lambert, V. Malka, S. P. D. Mangles, M. Bloom, S. Kneip
Journal: Physics of Plasmas
Phys. Plasmas 19, 063104 (2012)
https://doi.org/10.1063/1.4725421
Published: June 2012
View article titled, Tuning the electron energy by controlling the density perturbation position in laser plasma accelerators
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Journal Articles

Bessel spatial profile of a soft x-ray laser beam

F. Tissandier, S. Sebban, M. Ribière, J. Gautier, Ph. Zeitoun, G. Lambert, J.-Ph. Goddet, F. Burgy, C. Valentin, A. Rousse, J. Nejdl, T. Mocek, G. Maynard
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 231106 (2010)
https://doi.org/10.1063/1.3515841
Published: December 2010
View article titled, Bessel spatial profile of a soft x-ray laser beam
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Journal Articles

Subwavenumber charge-coupled device spectrometer calibration using molecular iodine laser-induced fluorescence

Joseph G. Lambert, Carlos Hernandez-Diaz, J. Charles Williamson
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 81, 013110 (2010)
https://doi.org/10.1063/1.3287951
Published: January 2010
View article titled, Subwavenumber charge-coupled device spectrometer calibration using molecular iodine laser-induced fluorescence
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Includes: Supplementary data
Journal Articles

Quantum-limited mass flow of liquid He 3

G. Lambert, G. Gervais, W. J. Mullin
Journal: Low Temperature Physics
Low Temp. Phys. 34, 249–253 (2008)
https://doi.org/10.1063/1.2908872
Published: April 2008
View article titled, Quantum-limited mass flow of liquid He 3
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Journal Articles

The ARC‐EN‐CIEL French 4th Generation Light Source

C. Bruni, M. E. Couprie, O. Chubar, A. Loulergue, L. Nahon, B. Carré, D. Garzella, M. Labat, G. Lambert, P. Monot, M. Jablonka, F. Méot, A. Mosnier, J. R. Marquès, J. M. Ortega, D. Nutarelli
Journal: AIP Conference Proceedings
AIP Conf. Proc. 879, 256–259 (2007)
https://doi.org/10.1063/1.2436050
Published: January 2007
View article titled, The ARC‐EN‐CIEL French 4<sup>th</sup> Generation Light Source
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Journal Articles

Photoluminescence spectra in an applied magnetic field for excitons bound to ionized donors in high‐purity, epitaxial GaAs

S. Zemon, G. Lambert
Journal: Journal of Applied Physics
J. Appl. Phys. 70, 4909–4918 (1991)
https://doi.org/10.1063/1.349036
Published: November 1991
View article titled, Photoluminescence spectra in an applied magnetic field for excitons bound to ionized donors in high‐purity, epitaxial GaAs
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Journal Articles

Characterization of Er3+‐doped glasses by fluorescence line narrowing

S. Zemon, G. Lambert, L. J. Andrews, W. J. Miniscalco, B. T. Hall, T. Wei, R. C. Folweiler
Journal: Journal of Applied Physics
J. Appl. Phys. 69, 6799–6811 (1991)
https://doi.org/10.1063/1.347669
Published: May 1991
View article titled, Characterization of Er<sup>3+</sup>‐doped glasses by fluorescence line narrowing
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Journal Articles

Photoluminescence and photoluminescence excitation spectroscopy in a magnetic field for GaAs grown on a Si substrate

S. Zemon, J. Lee, G. Lambert
Journal: Journal of Applied Physics
J. Appl. Phys. 65, 4382–4387 (1989)
https://doi.org/10.1063/1.343277
Published: June 1989
View article titled, Photoluminescence and photoluminescence excitation spectroscopy in a magnetic field for GaAs grown on a Si substrate
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Journal Articles

Resonant photoluminescence excitation in GaAs grown directly on Si

S. Zemon, C. Jagannath, S. K. Shastry, W. J. Miniscalco, G. Lambert
Journal: Applied Physics Letters
Appl. Phys. Lett. 53, 213–215 (1988)
https://doi.org/10.1063/1.100134
Published: July 1988
View article titled, Resonant photoluminescence excitation in GaAs grown directly on Si
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Journal Articles

Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy

S. K. Shastry, S. Zemon, D. G. Kenneson, G. Lambert
Journal: Applied Physics Letters
Appl. Phys. Lett. 52, 150–152 (1988)
https://doi.org/10.1063/1.99034
Published: January 1988
View article titled, Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy
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Journal Articles

Photoluminescence spectra and line‐shape synthesis of a conduction‐band‐to‐deep‐acceptor transition in GaAs:Sn

S. Zemon, M. O. Vassell, G. Lambert, R. H. Bartram
Journal: Journal of Applied Physics
J. Appl. Phys. 60, 4253–4258 (1986)
https://doi.org/10.1063/1.337464
Published: December 1986
View article titled, Photoluminescence spectra and line‐shape synthesis of a conduction‐band‐to‐deep‐acceptor transition in GaAs:Sn
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Journal Articles

Studies of free‐to‐bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor‐phase epitaxy and molecular‐beam epitaxy

S. Zemon, P. Norris, E. S. Koteles, G. Lambert
Journal: Journal of Applied Physics
J. Appl. Phys. 59, 2828–2832 (1986)
https://doi.org/10.1063/1.336937
Published: April 1986
View article titled, Studies of free‐to‐bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor‐phase epitaxy and molecular‐beam epitaxy
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Journal Articles

Analysis of free‐to‐bound flourescence line shapes for a deep level in GaAs:Sn

S. Zemon, M. O. Vassell, G. Lambert, R. H. Bartram
Journal: Journal of Applied Physics
J. Appl. Phys. 53, 3347–3349 (1982)
https://doi.org/10.1063/1.331001
Published: April 1982
View article titled, Analysis of free‐to‐bound flourescence line shapes for a deep level in GaAs:Sn
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