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1-20 of 24
G. L. Snider
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Journal Articles
Overcoming challenges in single electron charge detection of nanoscale dipoles
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J. Vac. Sci. Technol. B 42, 063208 (2024)
Published: December 2024
Journal Articles
New method of fabrication of suspended metallic single electron transistor (SET)
Available to Purchase
J. Vac. Sci. Technol. B 42, 013201 (2024)
Published: January 2024
Journal Articles
Defect detection in nano-scale transistors based on radio-frequency reflectometry
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 99, 152106 (2011)
Published: October 2011
Journal Articles
Journal Articles
Carbon nanotube gated lateral resonant tunneling field-effect transistors
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 87, 152102 (2005)
Published: October 2005
Journal Articles
Single-electron tunneling effects in a metallic double dot device
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 80, 667–669 (2002)
Published: January 2002
Journal Articles
Residual arsenic site in oxidized Al x Ga 1−x As (x=0.96)
Available to PurchaseS.-K. Cheong, B. A. Bunker, T. Shibata, D. C. Hall, C. B. DeMelo, Y. Luo, G. L. Snider, G. Kramer, N. El-Zein
Journal:
Applied Physics Letters
Appl. Phys. Lett. 78, 2458–2460 (2001)
Published: April 2001
Journal Articles
Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells
Available to PurchaseL. M. Sparing, A. M. Mintairov, J. H. Hodak, I. B. Martini, G. V. Hartland, U. Bindley, S. Lee, J. K. Furdyna, J. L. Merz, G. L. Snider
Journal:
Journal of Applied Physics
J. Appl. Phys. 87, 3063–3067 (2000)
Published: March 2000
Journal Articles
Quantum-dot cellular automata
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J. Vac. Sci. Technol. A 17, 1394–1398 (1999)
Published: July 1999
Journal Articles
Experimental demonstration of a binary wire for quantum-dot cellular automata
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 74, 2875–2877 (1999)
Published: May 1999
Journal Articles
Quantum-dot cellular automata: Review and recent experiments (invited)
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Journal:
Journal of Applied Physics
J. Appl. Phys. 85, 4283–4285 (1999)
Published: April 1999
Journal Articles
Electron mobility in modulation-doped AlGaN–GaN heterostructures
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 74, 287–289 (1999)
Published: January 1999
Journal Articles
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 72, 707–709 (1998)
Published: February 1998
Journal Articles
Ion induced damage in strained CdZnSe/ZnSe quantum well structures
Available to PurchaseL. M. Sparing, P. D. Wang, A. M. Mintairov, S. Lee, U. Bindley, C. H. Chen, S. S. Shi, J. K. Furdyna, J. L. Merz, G. L. Snider
J. Vac. Sci. Technol. B 15, 2652–2655 (1997)
Published: November 1997
Journal Articles
Photoluminescence blueshift induced by reactive ion etching of strained CdZnSe/ZnSe quantum well structures
Available to PurchaseL. M. Sparing, P. D. Wang, S. H. Xin, S. W. Short, S. S. Shi, J. K. Furdyna, J. L. Merz, G. L. Snider
J. Vac. Sci. Technol. B 14, 3654–3657 (1996)
Published: November 1996
Journal Articles
Charge detector realization for AlGaAs/GaAs quantum‐dot cellular automata
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J. Vac. Sci. Technol. B 14, 4046–4050 (1996)
Published: November 1996
Journal Articles
High aspect ratio dry etching for microchannel plates
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J. Vac. Sci. Technol. B 12, 3327–3331 (1994)
Published: November 1994
Journal Articles
Design and analysis of InAs/AlSb ballistic constrictions for high temperature operation and low gate leakage
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J. Vac. Sci. Technol. B 11, 2528–2531 (1993)
Published: November 1993
Journal Articles
Effect of band structure on etch‐stop layers in the photoelectrochemical etching of GaAs/AlGaAs semiconductor structures
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 62, 1809–1811 (1993)
Published: April 1993
Journal Articles
Split‐gate electron waveguide fabrication using multilayer poly(methylmethacrylate)
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J. Vac. Sci. Technol. B 9, 2856–2860 (1991)
Published: November 1991
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