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G. K. Dalapati
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Journal Articles

Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells

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A. Kumar, H. Hidayat, C. Ke, S. Chakraborty, G. K. Dalapati, P. I. Widenborg, C. C. Tan, S. Dolmanan, A. G. Aberle
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 134505 (2013)
https://doi.org/10.1063/1.4823811
Published: October 2013
View articletitled, Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells
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Journal Articles

Integration of TaOx-based resistive-switching element and GaAs diode

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Z. Xu, X. Tong, S. F. Yoon, Y. C. Yeo, C. K. Chia, G. K. Dalapati, D. Z. Chi
Journal: APL Materials
APL Mater. 1, 032121 (2013)
https://doi.org/10.1063/1.4820421
Published: September 2013
View articletitled, Integration of TaOx-based resistive-switching element and GaAs diode
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Journal Articles

Erratum: “Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate” [J. Appl. Phys. 111 , 044504 (2012)]

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Z. Xu, S. F. Yoon, Y. C. Yeo, C. K. Chia, Y. B. Cheng, G. K. Dalapati
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 059902 (2013)
https://doi.org/10.1063/1.4818479
Published: August 2013
View articletitled, Erratum: “Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate” [J. Appl. Phys. 111 , 044504 (2012)]
Open the PDF for Erratum: “Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate” [J. Appl. Phys. 111 , 044504 (2012)] in another window
Journal Articles

Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications

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H. F. Liu, C. C. Tan, G. K. Dalapati, D. Z. Chi
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 063114 (2012)
https://doi.org/10.1063/1.4754319
Published: September 2012
View articletitled, Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications
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Journal Articles

Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate

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Z. Xu, S. F. Yoon, Y. C. Yeo, C. K. Chia, Y. B. Cheng, G. K. Dalapati
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 044504 (2012)
https://doi.org/10.1063/1.3686182
Published: February 2012
View articletitled, Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate
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Journal Articles

Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

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C. Mahata, S. Mallik, T. Das, C. K. Maiti, G. K. Dalapati, C. C. Tan, C. K. Chia, H. Gao, M. K. Kumar, S. Y. Chiam, H. R. Tan, H. L. Seng, D. Z. Chi, E. Miranda
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 062905 (2012)
https://doi.org/10.1063/1.3684803
Published: February 2012
View articletitled, Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications
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Journal Articles

Role of AlxGa1−xAs buffer layer in heterogeneous integration of GaAs/Ge

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C. K. Chia, G. K. Dalapati, Y. Chai, S. L. Lu, W. He, J. R. Dong, D. H. L. Seng, H. K. Hui, A. S. W. Wong, A. J. Y. Lau, Y. B. Cheng, D. Z. Chi, Z. Zhu, Y. C. Yeo, Z. Xu, S. F. Yoon
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 066106 (2011)
https://doi.org/10.1063/1.3561489
Published: March 2011
View articletitled, Role of AlxGa1−xAs buffer layer in heterogeneous integration of GaAs/Ge
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Journal Articles

Photovoltaic characteristics of p- β -FeSi 2 ( Al ) / n-Si ( 100 ) heterojunction solar cells and the effects of interfacial engineering

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G. K. Dalapati, S. L. Liew, A. S. W. Wong, Y. Chai, S. Y. Chiam, D. Z. Chi
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 013507 (2011)
https://doi.org/10.1063/1.3536523
Published: January 2011
View articletitled, Photovoltaic characteristics of p- β -FeSi 2 ( Al ) / n-Si ( 100 ) heterojunction solar cells and the effects of interfacial engineering
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Journal Articles

HfO x N y gate dielectric on p -GaAs

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G. K. Dalapati, A. Sridhara, A. S. W. Wong, C. K. Chia, D. Z. Chi
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 073502 (2009)
https://doi.org/10.1063/1.3079409
Published: February 2009
View articletitled, HfO x N y gate dielectric on p -GaAs
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Journal Articles

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

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H. J. Oh, J. Q. Lin, S. J. Lee, G. K. Dalapati, A. Sridhara, D. Z. Chi, S. J. Chua, G. Q. Lo, D. L. Kwong
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 062107 (2008)
https://doi.org/10.1063/1.2968293
Published: August 2008
View articletitled, Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy
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Journal Articles

Effects of AlAs interfacial layer on material and optical properties of Ga As ∕ Ge ( 100 ) epitaxy

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C. K. Chia, J. R. Dong, D. Z. Chi, A. Sridhara, A. S. W. Wong, M. Suryana, G. K. Dalapati, S. J. Chua, S. J. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 141905 (2008)
https://doi.org/10.1063/1.2908042
Published: April 2008
View articletitled, Effects of AlAs interfacial layer on material and optical properties of Ga As ∕ Ge ( 100 ) epitaxy
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Journal Articles

Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method

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G. K. Dalapati, S. Chattopadhyay, L. S. Driscoll, A. G. O’Neill, K. S. K. Kwa, S. H. Olsen
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 034501 (2006)
https://doi.org/10.1063/1.2161800
Published: February 2006
View articletitled, Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method
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Journal Articles

Rapid thermal oxidation of Ge-rich Si 1 − x Ge x heterolayers

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M. K. Bera, S. Chakraborty, R. Das, G. K. Dalapati, S. Chattopadhyay, S. K. Samanta, W. J. Yoo, A. K. Chakraborty, Y. Butenko, L. Šiller, M. R. C. Hunt, S. Saha, C. K. Maiti
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 84–90 (2006)
https://doi.org/10.1116/1.2137329
Published: December 2005
View articletitled, Rapid thermal oxidation of Ge-rich Si 1 − x Ge x heterolayers
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