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Journal Articles

Impact of ambient temperature on the switching of voltage-controlled perpendicular magnetic tunnel junction

Y. C. Wu, W. Kim, S. Van Beek, S. Couet, R. Carpenter, S. Rao, S. Kundu, J. Van Houdt, G. Groeseneken, D. Crotti, G. S. Kar

Appl. Phys. Lett. 118, 122404 (2021)

https://doi.org/10.1063/5.0044995

Published: March 2021

View articletitled, Impact of ambient temperature on the switching of voltage-controlled perpendicular magnetic tunnel junction

Includes: Supplementary data

Journal Articles

Study of precessional switching speed control in voltage-controlled perpendicular magnetic tunnel junction

Y. C. Wu, W. Kim, S. Couet, K. Garello, S. Rao, S. Van Beek, S. Kundu, S. Houshmand Sharifi, D. Crotti, J. Van Houdt, G. Groeseneken, G. S. Kar

AIP Advances 10, 035123 (2020)

https://doi.org/10.1063/5.0002253

Published: March 2020

View articletitled, Study of precessional switching speed control in voltage-controlled perpendicular magnetic tunnel junction

Includes: Supplementary data

Journal Articles

Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions

Y. C. Wu, W. Kim, S. Rao, K. Garello, S. Van Beek, S. Couet, E. Liu, J. Swerts, S. Kundu, L. Souriau, F. Yasin, D. Crotti, J. K. Jochum, M. J. Van Bael, J. Van Houdt, G. Groeseneken, G. S. Kar

Appl. Phys. Lett. 113, 142405 (2018)

https://doi.org/10.1063/1.5042028

Published: October 2018

View articletitled, Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions

Journal Articles

Understanding ferroelectric Al:HfO₂ thin films with Si-based electrodes for 3D applications

K. Florent, S. Lavizzari, M. Popovici, L. Di Piazza, U. Celano, G. Groeseneken, J. Van Houdt

J. Appl. Phys. 121, 204103 (2017)

https://doi.org/10.1063/1.4984068

Published: May 2017

View articletitled, Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications

Journal Articles

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

J. Hu (胡杰), S. Stoffels, S. Lenci, B. Bakeroot, R. Venegas, G. Groeseneken, S. Decoutere

Appl. Phys. Lett. 106, 083502 (2015)

https://doi.org/10.1063/1.4913575

Published: February 2015

View articletitled, Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Journal Articles

Endurance degradation mechanisms in TiN\Ta₂O₅\Ta resistive random-access memory cells

C. Y. Chen, L. Goux, A. Fantini, S. Clima, R. Degraeve, A. Redolfi, Y. Y. Chen, G. Groeseneken, M. Jurczak

Appl. Phys. Lett. 106, 053501 (2015)

https://doi.org/10.1063/1.4907573

Published: February 2015

View articletitled, Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Journal Articles

Can p-channel tunnel field-effect transistors perform as good as n-channel?

A. S. Verhulst, D. Verreck, M. A. Pourghaderi, M. Van de Put, B. Sorée, G. Groeseneken, N. Collaert, A. V.-Y. Thean

Appl. Phys. Lett. 105, 043103 (2014)

https://doi.org/10.1063/1.4891348

Published: July 2014

View articletitled, Can p-channel tunnel field-effect transistors perform as good as n-channel?

Journal Articles

Considerations for further scaling of metal–insulator–metal DRAM capacitors

B. Kaczer, S. Clima, K. Tomida, B. Govoreanu, M. Popovici, M.-S. Kim, J. Swerts, A. Belmonte, W.-C. Wang, V. V. Afanas'ev, A. S. Verhulst, G. Pourtois, G. Groeseneken, M. Jurczak

J. Vac. Sci. Technol. B 31, 01A105 (2013)

https://doi.org/10.1116/1.4767125

Published: November 2012

View articletitled, Considerations for further scaling of metal–insulator–metal DRAM capacitors

Journal Articles

Insights into Ni-filament formation in unipolar-switching Ni/HfO₂/TiN resistive random access memory device

Yang Yin Chen, G. Pourtois, C. Adelmann, L. Goux, B. Govoreanu, R. Degreave, M. Jurczak, J. A. Kittl, G. Groeseneken, D. J. Wouters

Appl. Phys. Lett. 100, 113513 (2012)

https://doi.org/10.1063/1.3695078

Published: March 2012

View articletitled, Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device

Journal Articles

Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, J. Franco, L. Å. Ragnarsson, T. Grasser, G. Groeseneken

Appl. Phys. Lett. 98, 183506 (2011)

https://doi.org/10.1063/1.3586780

Published: May 2011

View articletitled, Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

Journal Articles

Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

M. Toledano-Luque, B. Kaczer, Ph. Roussel, M. J. Cho, T. Grasser, G. Groeseneken

J. Vac. Sci. Technol. B 29, 01AA04 (2011)

https://doi.org/10.1116/1.3532947

Published: January 2011

View articletitled, Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

Journal Articles

Impact of halo implant on the hot carrier reliability of germanium p -channel metal-oxide-semiconductor field-effect transitors

J. Franco, G. Eneman, B. Kaczer, J. Mitard, B. De Jaeger, G. Groeseneken

J. Vac. Sci. Technol. B 29, 01A804 (2011)

https://doi.org/10.1116/1.3520647

Published: January 2011

View articletitled, Impact of halo implant on the hot carrier reliability of germanium p -channel metal-oxide-semiconductor field-effect transitors

Journal Articles

Recent trends in bias temperature instability

B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken

J. Vac. Sci. Technol. B 29, 01AB01 (2011)

https://doi.org/10.1116/1.3521505

Published: January 2011

View articletitled, Recent trends in bias temperature instability

Journal Articles

An assessment of the mobility degradation induced by remote charge scattering

Z. Ji, J. F. Zhang, W. Zhang, G. Groeseneken, L. Pantisano, S. De Gendt, M. M. Heyns

Appl. Phys. Lett. 95, 263502 (2009)

https://doi.org/10.1063/1.3279146

Published: December 2009

View articletitled, An assessment of the mobility degradation induced by remote charge scattering

Journal Articles

Quantification of metal oxide semiconductor field effect transistor device reliability with low- V t lanthanum-incorporated high permittivity dielectrics

B. J. O’Sullivan, M. Aoulaiche, M. J. Cho, T. Kauerauf, R. Degraeve, H. Okawa, T. Schram, T. Y. Hoffmann, G. Groeseneken, S. Biesemans, T. Nakabayashi, A. Ikeda, M. Niwa

J. Appl. Phys. 106, 114504 (2009)

https://doi.org/10.1063/1.3262620

Published: December 2009

View articletitled, Quantification of metal oxide semiconductor field effect transistor device reliability with low- V t lanthanum-incorporated high permittivity dielectrics

Journal Articles

On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks

M. H. Chang, C. Z. Zhao, Z. Ji, J. F. Zhang, G. Groeseneken, L. Pantisano, S. De Gendt, M. M. Heyns

J. Appl. Phys. 105, 054505 (2009)

https://doi.org/10.1063/1.3093679

Published: March 2009

View articletitled, On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks

Journal Articles

Investigation of Bias-Temperature Instability in work-function-tuned high- k /metal-gate stacks

B. Kaczer, A. Veloso, Ph. J. Roussel, T. Grasser, G. Groeseneken

J. Vac. Sci. Technol. B 27, 459–462 (2009)

https://doi.org/10.1116/1.3054352

Published: February 2009

View articletitled, Investigation of Bias-Temperature Instability in work-function-tuned high- k /metal-gate stacks

Journal Articles

Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high- k /metal-gate p -type metal oxide semiconductor field effect transistors

M. Aoulaiche, B. Kaczer, Ph. J. Roussel, R. O’Connor, M. Houssa, S. De Gendt, H. E. Maes, G. Groeseneken

J. Vac. Sci. Technol. B 27, 463–467 (2009)

https://doi.org/10.1116/1.3058740

Published: February 2009

View articletitled, Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high- k /metal-gate p -type metal oxide semiconductor field effect transistors

Journal Articles

Reliability study of La 2 O 3 capped HfSiON high-permittivity n -type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes

B. J. O’Sullivan, R. Mitsuhashi, G. Pourtois, M. Aoulaiche, M. Houssa, N. Van der Heyden, T. Schram, Y. Harada, G. Groeseneken, P. Absil, S. Biesemans, T. Nakabayashi, A. Ikeda, M. Niwa

J. Appl. Phys. 104, 044512 (2008)

https://doi.org/10.1063/1.2967819

Published: August 2008

View articletitled, Reliability study of La 2 O 3 capped HfSiON high-permittivity n -type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes

Journal Articles

Process-induced positive charges in Hf-based gate stacks

C. Z. Zhao, J. F. Zhang, M. H. Chang, A. R. Peaker, S. Hall, G. Groeseneken, L. Pantisano, S. De Gendt, M. Heyns

J. Appl. Phys. 103, 014507 (2008)

https://doi.org/10.1063/1.2826937

Published: January 2008

View articletitled, Process-induced positive charges in Hf-based gate stacks

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Impact of ambient temperature on the switching of voltage-controlled perpendicular magnetic tunnel junction

Study of precessional switching speed control in voltage-controlled perpendicular magnetic tunnel junction

Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions

Understanding ferroelectric Al:HfO₂ thin films with Si-based electrodes for 3D applications

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Endurance degradation mechanisms in TiN\Ta₂O₅\Ta resistive random-access memory cells

Can p-channel tunnel field-effect transistors perform as good as n-channel?

Considerations for further scaling of metal–insulator–metal DRAM capacitors

Insights into Ni-filament formation in unipolar-switching Ni/HfO₂/TiN resistive random access memory device

Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

Impact of halo implant on the hot carrier reliability of germanium p -channel metal-oxide-semiconductor field-effect transitors

Recent trends in bias temperature instability

An assessment of the mobility degradation induced by remote charge scattering

Quantification of metal oxide semiconductor field effect transistor device reliability with low- V t lanthanum-incorporated high permittivity dielectrics

On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks

Investigation of Bias-Temperature Instability in work-function-tuned high- k /metal-gate stacks

Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high- k /metal-gate p -type metal oxide semiconductor field effect transistors

Reliability study of La 2 O 3 capped HfSiON high-permittivity n -type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes

Process-induced positive charges in Hf-based gate stacks

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