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Journal Articles

Improvement of the electrical performance of Au/Ti/HfO₂/Ge_0.9Sn_0.1 p-MOS capacitors by using interfacial layers

T. Haffner, M. A. Mahjoub, S. Labau, J. Aubin, J. M. Hartmann, G. Ghibaudo, S. David, B. Pelissier, F. Bassani, B. Salem

Appl. Phys. Lett. 115, 171601 (2019)

https://doi.org/10.1063/1.5121474

Published: October 2019

View article titled, Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers

Journal Articles

1/f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric

Wondwosen E. Muhea, K. Romanjek, X. Mescot, C. G. Theodorou, M. Charbonneau, F. Mohamed, G. Ghibaudo, B. Iñiguez

Appl. Phys. Lett. 114, 243301 (2019)

https://doi.org/10.1063/1.5093266

Published: June 2019

View article titled, 1/f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric

Journal Articles

Field-effect passivation of Si by ALD-Al₂O₃: Second harmonic generation monitoring and simulation

D. Damianos, G. Vitrant, A. Kaminski-Cachopo, D. Blanc-Pelissier, G. Ghibaudo, M. Lei, J. Changala, A. Bouchard, X. Mescot, M. Gri, S. Cristoloveanu, I. Ionica

J. Appl. Phys. 124, 125309 (2018)

https://doi.org/10.1063/1.5041062

Published: September 2018

View article titled, Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation

Journal Articles

Interface trap density evaluation on bare silicon-on-insulator wafers using the quasi-static capacitance technique

L. Pirro, I. Ionica, G. Ghibaudo, X. Mescot, L. Faraone, S. Cristoloveanu

J. Appl. Phys. 119, 175702 (2016)

https://doi.org/10.1063/1.4947498

Published: May 2016

View article titled, Interface trap density evaluation on bare silicon-on-insulator wafers using the quasi-static capacitance technique

Journal Articles

Grain boundary composition and conduction in HfO 2 : An ab initio study

K.-H. Xue, P. Blaise, L. R. C. Fonseca, G. Molas, E. Vianello, B. Traoré, B. De Salvo, G. Ghibaudo, Y. Nishi

Appl. Phys. Lett. 102, 201908 (2013)

https://doi.org/10.1063/1.4807666

Published: May 2013

View article titled, Grain boundary composition and conduction in HfO 2 : An ab initio study

Journal Articles

Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors

C. G. Theodorou, N. Fasarakis, T. Hoffman, T. Chiarella, G. Ghibaudo, C. A. Dimitriadis

Appl. Phys. Lett. 101, 243512 (2012)

https://doi.org/10.1063/1.4772590

Published: December 2012

View article titled, Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors

Journal Articles

Low-temperature pseudo-metal-oxide-semiconductor field-effect transistor measurements on bare silicon-on-insulator wafers

A. Diab, L. Pirro, I. Ionica, X. Mescot, G. Ghibaudo, S. Cristoloveanu

Appl. Phys. Lett. 101, 092110 (2012)

https://doi.org/10.1063/1.4748984

Published: August 2012

View article titled, Low-temperature pseudo-metal-oxide-semiconductor field-effect transistor measurements on bare silicon-on-insulator wafers

Journal Articles

Analysis of effective mobility and hall effect mobility in high-k based In_0.75Ga_0.25As metal-oxide-semiconductor high-electron-mobility transistors

M. A. Negara, D. Veksler, J. Huang, G. Ghibaudo, P. K. Hurley, G. Bersuker, N. Goel, P. Kirsch

Appl. Phys. Lett. 99, 232101 (2011)

https://doi.org/10.1063/1.3665033

Published: December 2011

View article titled, Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors

Journal Articles

Impact of carrier heating on backscattering in inversion layers

R. Clerc, P. Palestri, L. Selmi, G. Ghibaudo

J. Appl. Phys. 110, 104502 (2011)

https://doi.org/10.1063/1.3660769

Published: November 2011

View article titled, Impact of carrier heating on backscattering in inversion layers

Journal Articles

Analytical modeling of organic solar cells and photodiodes

S. Altazin, R. Clerc, R. Gwoziecki, G. Pananakakis, G. Ghibaudo, C. Serbutoviez

Appl. Phys. Lett. 99, 143301 (2011)

https://doi.org/10.1063/1.3643126

Published: October 2011

View article titled, Analytical modeling of organic solar cells and photodiodes

Journal Articles

Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Y. Xu, R. Gwoziecki, R. Coppard, M. Benwadih, T. Minari, K. Tsukagoshi, J. A. Chroboczek, F. Balestra, G. Ghibaudo

Appl. Phys. Lett. 98, 033505 (2011)

https://doi.org/10.1063/1.3544583

Published: January 2011

View article titled, Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Journal Articles

Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors

E. G. Ioannidis, C. G. Theodorou, A. Tsormpatzoglou, D. H. Tassis, K. Papathanasiou, C. A. Dimitriadis, J. Jomaah, G. Ghibaudo

J. Appl. Phys. 108, 064512 (2010)

https://doi.org/10.1063/1.3483279

Published: September 2010

View article titled, Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors

Journal Articles

Modified transmission-line method for contact resistance extraction in organic field-effect transistors

Yong Xu, R. Gwoziecki, I. Chartier, R. Coppard, F. Balestra, G. Ghibaudo

Appl. Phys. Lett. 97, 063302 (2010)

https://doi.org/10.1063/1.3479476

Published: August 2010

View article titled, Modified transmission-line method for contact resistance extraction in organic field-effect transistors

Journal Articles

Extraction of low-frequency noise in contact resistance of organic field-effect transistors

Y. Xu, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard, F. Balestra, J. A. Chroboczek, G. Ghibaudo

Appl. Phys. Lett. 97, 033503 (2010)

https://doi.org/10.1063/1.3467057

Published: July 2010

View article titled, Extraction of low-frequency noise in contact resistance of organic field-effect transistors

Journal Articles

Low‐Frequency Noise in a 0.18 μ m Mixed‐Mode CMOS Technology at Low Temperature

P. Martin, M. Cavelier, G. Ghibaudo

AIP Conf. Proc. 1129, 317–320 (2009)

https://doi.org/10.1063/1.3140462

Published: April 2009

View article titled, Low‐Frequency Noise in a 0.18 μ m Mixed‐Mode CMOS Technology at Low Temperature

Journal Articles

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

M. Cassé, F. Rochette, L. Thevenod, N. Bhouri, F. Andrieu, G. Reimbold, F. Boulanger, M. Mouis, G. Ghibaudo, D. K. Maude

J. Appl. Phys. 105, 084503 (2009)

https://doi.org/10.1063/1.3097764

Published: April 2009

View article titled, A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

Journal Articles

Impact of progressive oxide soft breakdown on metal oxide semiconductor parameters: Experiment and modeling

L. Gerrer, G. Ribes, G. Ghibaudo, J. Jomaah

J. Vac. Sci. Technol. B 27, 448–452 (2009)

https://doi.org/10.1116/1.3065414

Published: February 2009

View article titled, Impact of progressive oxide soft breakdown on metal oxide semiconductor parameters: Experiment and modeling

Journal Articles

Low frequency noise analysis in Hf O 2 ∕ Si O 2 gate oxide fully depleted silicon on insulator transistors

L. Zafari, J. Jomaah, G. Ghibaudo, O. Faynot

J. Vac. Sci. Technol. B 27, 402–405 (2009)

https://doi.org/10.1116/1.3072518

Published: February 2009

View article titled, Low frequency noise analysis in Hf O 2 ∕ Si O 2 gate oxide fully depleted silicon on insulator transistors

Journal Articles

Analytical modeling of tunneling current through Si O 2 – Hf O 2 stacks in metal oxide semiconductor structures

J. Coignus, R. Clerc, C. Leroux, G. Reimbold, G. Ghibaudo, F. Boulanger

J. Vac. Sci. Technol. B 27, 338–345 (2009)

https://doi.org/10.1116/1.3043539

Published: February 2009

View article titled, Analytical modeling of tunneling current through Si O 2 – Hf O 2 stacks in metal oxide semiconductor structures

Journal Articles

Contact etch stop a - Si x N y : H layer: A key factor for single polysilicon flash memory data retention

G. Beylier, D. Benoit, P. Mora, S. Bruyère, G. Ghibaudo

J. Vac. Sci. Technol. B 27, 486–489 (2009)

https://doi.org/10.1116/1.3071846

Published: February 2009

View article titled, Contact etch stop a - Si x N y : H layer: A key factor for single polysilicon flash memory data retention

NARROW

Topics

Improvement of the electrical performance of Au/Ti/HfO₂/Ge_0.9Sn_0.1 p-MOS capacitors by using interfacial layers

1/f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric

Field-effect passivation of Si by ALD-Al₂O₃: Second harmonic generation monitoring and simulation

Interface trap density evaluation on bare silicon-on-insulator wafers using the quasi-static capacitance technique

Grain boundary composition and conduction in HfO 2 : An ab initio study

Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors

Low-temperature pseudo-metal-oxide-semiconductor field-effect transistor measurements on bare silicon-on-insulator wafers

Analysis of effective mobility and hall effect mobility in high-k based In_0.75Ga_0.25As metal-oxide-semiconductor high-electron-mobility transistors

Impact of carrier heating on backscattering in inversion layers

Analytical modeling of organic solar cells and photodiodes

Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors

Modified transmission-line method for contact resistance extraction in organic field-effect transistors

Extraction of low-frequency noise in contact resistance of organic field-effect transistors

Low‐Frequency Noise in a 0.18 μ m Mixed‐Mode CMOS Technology at Low Temperature

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

Impact of progressive oxide soft breakdown on metal oxide semiconductor parameters: Experiment and modeling

Low frequency noise analysis in Hf O 2 ∕ Si O 2 gate oxide fully depleted silicon on insulator transistors

Analytical modeling of tunneling current through Si O 2 – Hf O 2 stacks in metal oxide semiconductor structures

Contact etch stop a - Si x N y : H layer: A key factor for single polysilicon flash memory data retention

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